Applications Of Finite Element Methods For Reliability Studies On Ulsi Interconnections

Author : Cher Ming Tan,Wei Li,Zhenghao Gan,Yuejin Hou
Publisher : Springer Science & Business Media
Page : 152 pages
File Size : 53,5 Mb
Release : 2011-03-28
Category : Technology & Engineering
ISBN : 9780857293107

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Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections by Cher Ming Tan,Wei Li,Zhenghao Gan,Yuejin Hou Pdf

Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections provides a detailed description of the application of finite element methods (FEMs) to the study of ULSI interconnect reliability. Over the past two decades the application of FEMs has become widespread and continues to lead to a much better understanding of reliability physics. To help readers cope with the increasing sophistication of FEMs’ applications to interconnect reliability, Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections will: introduce the principle of FEMs; review numerical modeling of ULSI interconnect reliability; describe the physical mechanism of ULSI interconnect reliability encountered in the electronics industry; and discuss in detail the use of FEMs to understand and improve ULSI interconnect reliability from both the physical and practical perspective, incorporating the Monte Carlo method. A full-scale review of the numerical modeling methodology used in the study of interconnect reliability highlights useful and noteworthy techniques that have been developed recently. Many illustrations are used throughout the book to improve the reader’s understanding of the methodology and its verification. Actual experimental results and micrographs on ULSI interconnects are also included. Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections is a good reference for researchers who are working on interconnect reliability modeling, as well as for those who want to know more about FEMs for reliability applications. It gives readers a thorough understanding of the applications of FEM to reliability modeling and an appreciation of the strengths and weaknesses of various numerical models for interconnect reliability.

Author : Cher Ming Tan
Publisher : World Scientific
Page : 312 pages
File Size : 41,6 Mb
Release : 2010
Category : Technology & Engineering
ISBN : 9789814273329

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Electromigration in ULSI Interconnections by Cher Ming Tan Pdf

Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.

Author : Cher-Ming Tan,Udit Narula,Vivek Sangwan
Publisher : CRC Press
Page : 121 pages
File Size : 53,9 Mb
Release : 2021-11-24
Category : Science
ISBN : 9781000470680

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Graphene and VLSI Interconnects by Cher-Ming Tan,Udit Narula,Vivek Sangwan Pdf

Copper (Cu) has been used as an interconnection material in the semiconductor industry for years owing to its best balance of conductivity and performance. However, it is running out of steam as it is approaching its limits with respect to electrical performance and reliability. Graphene is a non-metal material, but it can help to improve electromigration (EM) performance of Cu because of its excellent properties. Combining graphene with Cu for very large-scale integration (VLSI) interconnects can be a viable solution. The incorporation of graphene into Cu allows the present Cu fabrication back-end process to remain unaltered, except for the small step of “inserting” graphene into Cu. Therefore, it has a great potential to revolutionize the VLSI integrated circuit (VLSI-IC) industry and appeal for further advancement of the semiconductor industry. This book is a compilation of comprehensive studies done on the properties of graphene and its synthesis methods suitable for applications of VLSI interconnects. It introduces the development of a new method to synthesize graphene, wherein it not only discusses the method to grow graphene over Cu but also allows the reader to know how to optimize graphene growth, using statistical design of experiments (DoE), on Cu interconnects in order to obtain good-quality and reliable interconnects. It provides a basic understanding of graphene–Cu interaction mechanism and evaluates the electrical and EM performance of graphenated Cu interconnects.

Author : Cher Ming Tan,Feifei He
Publisher : Springer Science & Business Media
Page : 103 pages
File Size : 43,9 Mb
Release : 2013-03-16
Category : Technology & Engineering
ISBN : 9789814451215

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Electromigration Modeling at Circuit Layout Level by Cher Ming Tan,Feifei He Pdf

Integrated circuit (IC) reliability is of increasing concern in present-day IC technology where the interconnect failures significantly increases the failure rate for ICs with decreasing interconnect dimension and increasing number of interconnect levels. Electromigration (EM) of interconnects has now become the dominant failure mechanism that determines the circuit reliability. This brief addresses the readers to the necessity of 3D real circuit modelling in order to evaluate the EM of interconnect system in ICs, and how they can create such models for their own applications. A 3-dimensional (3D) electro-thermo-structural model as opposed to the conventional current density based 2-dimensional (2D) models is presented at circuit-layout level.

Author : Tomáš Březina,Ryszard Jabloński
Publisher : Springer Science & Business Media
Page : 902 pages
File Size : 48,5 Mb
Release : 2013-09-12
Category : Technology & Engineering
ISBN : 9783319022949

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Mechatronics 2013 by Tomáš Březina,Ryszard Jabloński Pdf

Mechatronics, as the integrating framework of mechanical engineering, electrical engineering, computer technology, control engineering and automation forms a crucial part in the design, manufacture and maintenance of a wide range of engineering products and processes. The mechatronics itself changes rapidly in last decade, from original mixture of subfields into original approach in engineering as a technical discipline. The book you are holding is aimed to help the reader to orient in this evolving field of science and technology. "Mechatronics 2013: Recent Technological and Scientific Advances" is the fourth volume following the previous editions in 2007, 2009 and 2011, providing the comprehensive and accessible coverage of advances in mechatronics presented on the 10th International Conference Mechatronics 2013, hosted this year at the Brno University of Technology, Czech Republic. The contributions, that passed the thorough review process, give an insight into current trends in research and development among Mechatronics 2013 contributing countries, with paper topics covering design and modeling of mechatronic systems, control and automation, signal processing, robotics and others, keeping in mind the innovation benefits of mechatronics design approach, leading to the development, production and daily use of machines and devices possessing a certain degree of computer based intelligence.

Author : Zhenghao Gan,Waisum Wong,Juin Liou
Publisher : McGraw Hill Professional
Page : 528 pages
File Size : 46,9 Mb
Release : 2012-10-06
Category : Technology & Engineering
ISBN : 9780071754286

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Semiconductor Process Reliability in Practice by Zhenghao Gan,Waisum Wong,Juin Liou Pdf

Proven processes for ensuring semiconductor device reliability Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide. Coverage includes: Basic device physics Process flow for MOS manufacturing Measurements useful for device reliability characterization Hot carrier injection Gate-oxide integrity (GOI) and time-dependent dielectric breakdown (TDDB) Negative bias temperature instability Plasma-induced damage Electrostatic discharge protection of integrated circuits Electromigration Stress migration Intermetal dielectric breakdown

Author : Farzad Ebrahimi
Publisher : BoD – Books on Demand
Page : 414 pages
File Size : 44,8 Mb
Release : 2012-10-10
Category : Technology & Engineering
ISBN : 9789535107699

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Finite Element Analysis by Farzad Ebrahimi Pdf

In the past few decades, the Finite Element Method (FEM) has been developed into a key indispensable technology in the modeling and simulation of various engineering systems. The present book reports on the state of the art research and development findings on this very broad matter through original and innovative research studies exhibiting various investigation directions of FEM in electrical, civil, materials and biomedical engineering. This book is a result of contributions of experts from international scientific community working in different aspects of FEM. The text is addressed not only to researchers, but also to professional engineers, students and other experts in a variety of disciplines, both academic and industrial seeking to gain a better understanding of what has been done in the field recently, and what kind of open problems are in this area.

Author : Cher Ming Tan
Publisher : World Scientific
Page : 312 pages
File Size : 46,9 Mb
Release : 2010
Category : Computers
ISBN : 9789814273336

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Electromigration in ULSI Interconnections by Cher Ming Tan Pdf

Electromigration in ULSI Interconnections provides a comprehensive description of the electro migration in integrated circuits. It is intended for both beginner and advanced readers on electro migration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electro migration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electro migration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electro migration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electro migration are presented in a concise and rigorous manner.Methods of numerical modeling for the interconnect electro migration and their applications to the understanding of electro migration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electro migration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electro migration are outlined and discussed.

Author : Jens Lienig,Matthias Thiele
Publisher : Springer
Page : 159 pages
File Size : 51,9 Mb
Release : 2018-02-23
Category : Technology & Engineering
ISBN : 9783319735580

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Fundamentals of Electromigration-Aware Integrated Circuit Design by Jens Lienig,Matthias Thiele Pdf

The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.

Author : Mikhail Baklanov,Paul S. Ho,Ehrenfried Zschech
Publisher : John Wiley & Sons
Page : 616 pages
File Size : 44,6 Mb
Release : 2012-04-02
Category : Technology & Engineering
ISBN : 9780470662540

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Advanced Interconnects for ULSI Technology by Mikhail Baklanov,Paul S. Ho,Ehrenfried Zschech Pdf

Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

Author : Robert Havemann
Publisher : Mrs Conference Proceedings
Page : 640 pages
File Size : 46,6 Mb
Release : 1997
Category : Computers
ISBN : UOM:39015040062161

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Advanced Metallization and Interconnect Systems for ULSI Applications in 1996: Volume 12 by Robert Havemann Pdf

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author : Ivo Babuška,Theofanis Strouboulis
Publisher : Oxford University Press
Page : 820 pages
File Size : 47,7 Mb
Release : 2001
Category : Mathematics
ISBN : 0198502761

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The Finite Element Method and Its Reliability by Ivo Babuška,Theofanis Strouboulis Pdf

The finite element method is a numerical method widely used in engineering. Experience shows that unreliable computation can lead to very serious consequences. Hence reliability questions stand are at the forefront of engineering and theoretical interests. This book presents the mathematical theory of the finite element method and is the first to focus on the questions of how reliable computed results really are. It addresses among other topics the local behaviour, errors caused by pollution, superconvergence, and optimal meshes. Many computational examples illustrate the importance of the theoretical conclusions for practical computations. Graduate students, lecturers, and researchers in mathematics, engineering, and scientific computation will benefit from the clear structure of the book, and will find this a very useful reference.

Author : Ian Milne,R. O. Ritchie,B.L. Karihaloo
Publisher : Elsevier
Page : 4647 pages
File Size : 49,8 Mb
Release : 2003-07-25
Category : Business & Economics
ISBN : 9780080490731

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Comprehensive Structural Integrity by Ian Milne,R. O. Ritchie,B.L. Karihaloo Pdf

The aim of this major reference work is to provide a first point of entry to the literature for the researchers in any field relating to structural integrity in the form of a definitive research/reference tool which links the various sub-disciplines that comprise the whole of structural integrity. Special emphasis will be given to the interaction between mechanics and materials and structural integrity applications. Because of the interdisciplinary and applied nature of the work, it will be of interest to mechanical engineers and materials scientists from both academic and industrial backgrounds including bioengineering, interface engineering and nanotechnology. The scope of this work encompasses, but is not restricted to: fracture mechanics, fatigue, creep, materials, dynamics, environmental degradation, numerical methods, failure mechanisms and damage mechanics, interfacial fracture and nano-technology, structural analysis, surface behaviour and heart valves. The structures under consideration include: pressure vessels and piping, off-shore structures, gas installations and pipelines, chemical plants, aircraft, railways, bridges, plates and shells, electronic circuits, interfaces, nanotechnology, artificial organs, biomaterial prostheses, cast structures, mining... and more. Case studies will form an integral part of the work.

Author : Anonim
Publisher : Unknown
Page : 1430 pages
File Size : 51,9 Mb
Release : 1992
Category : Physics
ISBN : STANFORD:36105000898713

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Physics Briefs by Anonim Pdf

Author : Y.-L. Shen
Publisher : Springer Science & Business Media
Page : 290 pages
File Size : 47,7 Mb
Release : 2010-08-09
Category : Technology & Engineering
ISBN : 9781441963123

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Constrained Deformation of Materials by Y.-L. Shen Pdf

"Constrained Deformation of Materials: Devices, Heterogeneous Structures and Thermo-Mechanical Modeling" is an in-depth look at the mechanical analyses and modeling of advanced small-scale structures and heterogeneous material systems. Mechanical deformations in thin films and miniaturized materials, commonly found in microelectronic devices and packages, MEMS, nanostructures and composite and multi-phase materials, are heavily influenced by the external or internal physical confinement. A continuum mechanics-based approach is used, together with discussions on micro-mechanisms, to treat the subject in a systematic manner under the unified theme. Readers will find valuable information on the proper application of thermo-mechanics in numerical modeling as well as in the interpretation and prediction of physical material behavior, along with many case studies. Additionally, particular attention is paid to practical engineering relevance. Thus real-life reliability issues are discussed in detail to serve the needs of researchers and engineers alike.