2003 Ieee International Conference On Simulation Of Semiconductor Processes And Devices
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2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices by Anonim Pdf
Taken from the proceedings of the 2003 International Conference of the Simulation of Semiconductor Processes and Devices (SISPAD 2003), this volume looks at electron devices.
Simulation of Semiconductor Processes and Devices 2004 by Gerhard Wachutka,Gabriele Schrag Pdf
This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
Semiconductor Memories and Systems by Andrea Redaelli,Fabio Pellizzer Pdf
Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability. Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies. Features contributions from experts from leading companies in semiconductor memory Discusses physical operating mechanisms, fabrication technologies and paths to scalability for current and emerging semiconductor memories Reviews primary memory technologies, including SRAM, DRAM, NVM and NAND flash memory Includes emerging storage class memory technologies such as phase change memory
EDA for IC Implementation, Circuit Design, and Process Technology by Luciano Lavagno,Louis Scheffer,Grant Martin Pdf
Presenting a comprehensive overview of the design automation algorithms, tools, and methodologies used to design integrated circuits, the Electronic Design Automation for Integrated Circuits Handbook is available in two volumes. The second volume, EDA for IC Implementation, Circuit Design, and Process Technology, thoroughly examines real-time logic to GDSII (a file format used to transfer data of semiconductor physical layout), analog/mixed signal design, physical verification, and technology CAD (TCAD). Chapters contributed by leading experts authoritatively discuss design for manufacturability at the nanoscale, power supply network design and analysis, design modeling, and much more. Save on the complete set.
Electronic Design Automation for IC Implementation, Circuit Design, and Process Technology by Luciano Lavagno,Igor L. Markov,Grant Martin,Louis K. Scheffer Pdf
The second of two volumes in the Electronic Design Automation for Integrated Circuits Handbook, Second Edition, Electronic Design Automation for IC Implementation, Circuit Design, and Process Technology thoroughly examines real-time logic (RTL) to GDSII (a file format used to transfer data of semiconductor physical layout) design flow, analog/mixed signal design, physical verification, and technology computer-aided design (TCAD). Chapters contributed by leading experts authoritatively discuss design for manufacturability (DFM) at the nanoscale, power supply network design and analysis, design modeling, and much more. New to This Edition: Major updates appearing in the initial phases of the design flow, where the level of abstraction keeps rising to support more functionality with lower non-recurring engineering (NRE) costs Significant revisions reflected in the final phases of the design flow, where the complexity due to smaller and smaller geometries is compounded by the slow progress of shorter wavelength lithography New coverage of cutting-edge applications and approaches realized in the decade since publication of the previous edition—these are illustrated by new chapters on 3D circuit integration and clock design Offering improved depth and modernity, Electronic Design Automation for IC Implementation, Circuit Design, and Process Technology provides a valuable, state-of-the-art reference for electronic design automation (EDA) students, researchers, and professionals.
2009 International Conference on Simulation of Semiconductor Processes and Devices by Electron Devices Society,IEEE Staff,Institute of Electrical and Electronics Engineers Pdf
Handbook of Semiconductor Manufacturing Technology by Yoshio Nishi,Robert Doering Pdf
Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.
Multiscale materials modelling offers an integrated approach to modelling material behaviour across a range of scales from the electronic, atomic and microstructural up to the component level. As a result, it provides valuable new insights into complex structures and their properties, opening the way to develop new, multi-functional materials together with improved process and product designs. Multiscale materials modelling summarises some of the key techniques and their applications. The various chapters cover the spectrum of scales in modelling methodologies, including electronic structure calculations, mesoscale and continuum modelling. The book covers such themes as dislocation behaviour and plasticity as well as the modelling of structural materials such as metals, polymers and ceramics. With its distinguished editor and international team of contributors, Multiscale materials modelling is a valuable reference for both the modelling community and those in industry wanting to know more about how multiscale materials modelling can help optimise product and process design. Reviews the principles and applications of mult-scale materials modelling Covers themes such as dislocation behaviour and plasticity and the modelling of structural materials Examines the spectrum of scales in modelling methodologies, including electronic structure calculations, mesoscale and continuum modelling
Field-Coupled Nanocomputing by Neal G. Anderson,Sanjukta Bhanja Pdf
Field-coupled nanocomputing (FCN) paradigms offer fundamentally new approaches to digital information processing that do not utilize transistors or require charge transport. Information transfer and computation are achieved in FCN via local field interactions between nanoscale building blocks that are organized in patterned arrays. Several FCN paradigms are currently under active investigation, including quantum-dot cellular automata (QCA), molecular quantum cellular automata (MQCA), nanomagnetic logic (NML), and atomic quantum cellular automata (AQCA). Each of these paradigms has a number of unique features that make it attractive as a candidate for post-CMOS nanocomputing, and each faces critical challenges to realization. This State-of-the-Art-Survey provides a snapshot of the current developments and novel research directions in the area of FCN. The book is divided into five sections. The first part, Field-Coupled Nanocomputing Paradigms, provides valuable background information and perspectives on the QDCA, MQCA, NML, and AQCA paradigms and their evolution. The second section, Circuits and Architectures, addresses a wide variety of current research on FCN clocking strategies, logic synthesis, circuit design and test, logic-in-memory, hardware security, and architecture. The third section, Modeling and Simulation, considers the theoretical modeling and computer simulation of large FCN circuits, as well as the use of simulations for gleaning physical insight into elementary FCN building blocks. The fourth section, Irreversibility and Dissipation, considers the dissipative consequences of irreversible information loss in FCN circuits, their quantification, and their connection to circuit structure. The fifth section, The Road Ahead: Opportunities and Challenges, includes an edited transcript of the panel discussion that concluded the FCN 13 workshop.
Silicon-on-insulator Technology and Devices 13 by George K. Celler,Sorin Cristoloveanu Pdf
This issue of ESC Transactions covers recent significant advances in SOI technologies. It will be of interest to materials and device scientists, as well as to process and applications oriented engineers. Several keynote papers introduce and review the main topics. This is followed by contributed papers covering the latest research and implementation results.
Fabless Semiconductor Manufacturing by Chinmay K. Maiti Pdf
This book deals with 3D nanodevices such as nanowire and nanosheet transistors at 7 nm and smaller technology nodes. It discusses technology computer-aided design (TCAD) simulations of stress- and strain-engineered advanced semiconductor devices, including III-nitride and RF FDSOI CMOS, for flexible and stretchable electronics. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including fabless intelligent manufacturing. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. In order to extend the role of TCAD in the More-than-Moore era, the design issues related to strain engineering for flexible and stretchable electronics have been introduced for the first time.
Silicon-on-Insulator Technology: Materials to VLSI by J.-P. Colinge Pdf
Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis.
Hot Carrier Degradation in Semiconductor Devices by Tibor Grasser Pdf
This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
