Author : Anonim
Publisher : Unknown
Page : 1058 pages
File Size : 50,5 Mb
Release : 1993
Category : Physics
ISBN : UOM:39015027832933
Physics Briefs
Anonim
Chemical Beam Epitaxial Regrowth Etching And Doping Of Iii V Compounds Using Novel Gas Sources For Applications Of Heterojunction Bipolar Transistors
Chemical Beam Epitaxial Regrowth Etching And Doping Of Iii V Compounds Using Novel Gas Sources For Applications Of Heterojunction Bipolar Transistors Book in PDF, ePub and Kindle version is available to download in english. Read online anytime anywhere directly from your device. Click on the download button below to get a free pdf file of Chemical Beam Epitaxial Regrowth Etching And Doping Of Iii V Compounds Using Novel Gas Sources For Applications Of Heterojunction Bipolar Transistors book. This book definitely worth reading, it is an incredibly well-written.
Ceramic Abstracts
American Ceramic Society
Author : American Ceramic Society
Publisher : Unknown
Page : 1000 pages
File Size : 41,7 Mb
Release : 1996
Category : Ceramics
ISBN : CORNELL:31924077912669
Ceramic Abstracts by American Ceramic Society Pdf
Proceedings of the ... IEEE International Caracas Conference on Devices, Circuits and Systems
Anonim
Author : Anonim
Publisher : Unknown
Page : 420 pages
File Size : 51,7 Mb
Release : 1995
Category : Electronic apparatus and appliances
ISBN : UOM:39015035255291
Proceedings of the ... IEEE International Caracas Conference on Devices, Circuits and Systems by Anonim Pdf
International Aerospace Abstracts
Anonim
Author : Anonim
Publisher : Unknown
Page : 940 pages
File Size : 49,9 Mb
Release : 1997
Category : Aeronautics
ISBN : UOM:39015040314299
International Aerospace Abstracts by Anonim Pdf
Chemical Beam Epitaxial Regrowth, Etching, and Doping of III-V Compounds Using Novel Gas Sources for Applications of Heterojunction Bipolar Transistors
Nein-Yi Li
Author : Nein-Yi Li
Publisher : Unknown
Page : 446 pages
File Size : 40,8 Mb
Release : 1997
Category : Electronic
ISBN : UCSD:31822023869142
Chemical Beam Epitaxial Regrowth, Etching, and Doping of III-V Compounds Using Novel Gas Sources for Applications of Heterojunction Bipolar Transistors by Nein-Yi Li Pdf
Electrical & Electronics Abstracts
Anonim
Author : Anonim
Publisher : Unknown
Page : 1860 pages
File Size : 43,5 Mb
Release : 1997
Category : Electrical engineering
ISBN : OSU:32435059588608
Electrical & Electronics Abstracts by Anonim Pdf
Scientific and Technical Aerospace Reports
Anonim
Author : Anonim
Publisher : Unknown
Page : 1124 pages
File Size : 42,9 Mb
Release : 1987
Category : Aeronautics
ISBN : UIUC:30112075701448
Scientific and Technical Aerospace Reports by Anonim Pdf
Science Abstracts
Anonim
Author : Anonim
Publisher : Unknown
Page : 980 pages
File Size : 54,8 Mb
Release : 1993
Category : Electrical engineering
ISBN : OSU:32435060206075
Science Abstracts by Anonim Pdf
Metals Abstracts
Anonim
Author : Anonim
Publisher : Unknown
Page : 1306 pages
File Size : 47,9 Mb
Release : 1985
Category : Metallurgy
ISBN : CORNELL:31924078109174
Metals Abstracts by Anonim Pdf
The Journal of the Korean Physical Society
Anonim
Author : Anonim
Publisher : Unknown
Page : 424 pages
File Size : 45,5 Mb
Release : 2002
Category : Physics
ISBN : CHI:61579157
The Journal of the Korean Physical Society by Anonim Pdf
Gas Source Molecular Beam Epitaxy
M. B. Panish,H. Temkin
Author : M. B. Panish,H. Temkin
Publisher : Unknown
Page : 0 pages
File Size : 48,9 Mb
Release : 1993
Category : Gallium arsenide semiconductors
ISBN : 038756540X
Gas Source Molecular Beam Epitaxy by M. B. Panish,H. Temkin Pdf
Science & Technology in Japan
Anonim
Author : Anonim
Publisher : Unknown
Page : 588 pages
File Size : 45,8 Mb
Release : 1991
Category : Science
ISBN : OSU:32435050977255
Science & Technology in Japan by Anonim Pdf
Topics in Growth and Device Processing of III-V Semiconductors
S. J. Pearton,C. R. Abernathy,F. Ren
Author : S. J. Pearton,C. R. Abernathy,F. Ren
Publisher : World Scientific
Page : 568 pages
File Size : 40,6 Mb
Release : 1996
Category : Technology & Engineering
ISBN : 9810218842
Topics in Growth and Device Processing of III-V Semiconductors by S. J. Pearton,C. R. Abernathy,F. Ren Pdf
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
GaN and Related Materials
Stephen J. Pearton
Author : Stephen J. Pearton
Publisher : CRC Press
Page : 556 pages
File Size : 40,8 Mb
Release : 2021-10-08
Category : Science
ISBN : 9781000448429
GaN and Related Materials by Stephen J. Pearton Pdf
Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Semiconductors — Basic Data
Otfried Madelung
Author : Otfried Madelung
Publisher : Springer Science & Business Media
Page : 327 pages
File Size : 51,8 Mb
Release : 2012-12-06
Category : Science
ISBN : 9783642976759
Semiconductors — Basic Data by Otfried Madelung Pdf
The frequent use of well known critical data handbooks like Beilstein, Gmelin and Landolt-Bomstein is impeded by the fact that merely larger libraries - often far away from the scientist's working place - can afford such precious collections. To satisfy an urgent need of many scientists working in the field of semiconductor physics for having at their working place a comprehensive, high quality, but cheap collection of at least the basic data of their field of interest this volume contains the most important data of semiconductors. All data were compiled from information on semiconductors presented on more than 6000 pages in various volumes of the New Series of Landolt-Bomstein. We hope to meet the needs of the community of semiconductor physicists with this volume, forming a bridge between the laboratory and additional information sources in the libraries. The Editor Marburg, January 1996 Table of contents A Introduction 1 General remarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 The corresponding Landolt-Bomstein volumes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 3 Physical quantities tabulated in this volume . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 B Physical data Elements of the IVth group and IV-IV compounds 1. 1 Diamond (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1. 2 Silicon (Si) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 1. 3 Germanium (Ge) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 1. 4 Grey tin (a-Sn) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42 1. 5 Silicon carbide (SiC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 1. 6 Silicon germanium alloys (SixGel_x) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 2 III-V compounds 2. 1 Boron nitride (BN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 2. 2 Boron phosphide (BP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 2. 3 Boron arsenide (BAs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 2. 4 Aluminium nitride (AIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 2. 5 Aluminium phosphide (AlP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 2. 6 Aluminium arsenide (AlAs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .