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Author : S.A. Rice
Publisher : Elsevier
Page : 403 pages
File Size : 53,7 Mb
Release : 1985-03-01
Category : Science
ISBN : 0080868193
Diffusion-Limited Reactions
Author : Stephen A. Rice
Publisher : Unknown
Page : 404 pages
File Size : 48,5 Mb
Release : 1985
Category : Chemical kinetics
ISBN : 0444416315
Author : William Strieder,R. Aris
Publisher : Springer Science & Business Media
Page : 121 pages
File Size : 41,6 Mb
Release : 2013-03-07
Category : Mathematics
ISBN : 9783642656248
This monograph is an account of some problems involving diffusion or diffusion with simultaneous reaction that can be illuminated by the use of variational principles. It was written during a period that included sabbatical leaves of one of us (W. S. ) at the University of Minnesota and the other (R. A. ) at the University of Cambridge and we are grateful to the Petroleum Research Fund for helping to support the former and the Guggenheim Foundation for making possible the latter. We would also like to thank Stephen Prager for getting us together in the first place and for showing how interesting and useful these methods can be. We have also benefitted from correspondence with Dr. A. M. Arthurs of the University of York and from the counsel of Dr. B. D. Coleman the general editor of this series. Table of Contents Chapter 1. Introduction and Preliminaries . 1. 1. General Survey 1 1. 2. Phenomenological Descriptions of Diffusion and Reaction 2 1. 3. Correlation Functions for Random Suspensions 4 1. 4. Mean Free Path Statistics . 8 1. 5. Void Point-Surface Statistics . 11 1. 6. Variational Principles Applied to the Diffusion Equation. 12 1. 7. Notation. 16 Chapter 2. Diffusion Through a Porous Medium . 18 2. 1. Introduction 18 2. 2. Diffusion Through an Isotropic Porous Medium 18 2. 3. Variational Formulation for De . 20 2. 4. Bounds on De for an Isotropic Suspension 22 2. 5.
Author : C. H. Bamford,Charles Frank Howlett Tipper
Publisher : Unknown
Page : 428 pages
File Size : 47,5 Mb
Release : 1969
Category : Chemical kinetics
ISBN : UOM:39015016004239
Author : Daniel ben-Avraham,Shlomo Havlin
Publisher : Cambridge University Press
Page : 334 pages
File Size : 52,5 Mb
Release : 2000-11-02
Category : Mathematics
ISBN : 9780521622783
This book describes diffusion and transport in disordered media such as fractals and random resistor networks.
Author : Robert G. Mortimer
Publisher : Academic Press
Page : 1416 pages
File Size : 45,9 Mb
Release : 2008-05-29
Category : Science
ISBN : 0080878598
In this third edition, core applications have been added along with more recent developments in the theories of chemical reaction kinetics and molecular quantum mechanics, as well as in the experimental study of extremely rapid chemical reactions. * Fully revised concise edition covering recent developments in the field * Supports student learning with step by step explanation of fundamental principles, an appropriate level of math rigor, and pedagogical tools to aid comprehension * Encourages readers to apply theory in practical situations
Author : William B. J. Zimmerman
Publisher : Springer Science & Business Media
Page : 320 pages
File Size : 51,9 Mb
Release : 2006-06-27
Category : Science
ISBN : 3211329943
Microfluidics is a microtechnological field dealing with the precise transport of fluids (liquids or gases) in small amounts (e.g. microliters, nanoliters or even picoliters). This book provides a useful introduction into this burgeoning field, and a specific application of microfluidics is presented. It also gives a survey of microfluidics.
Author : Sung Hyun Park
Publisher : Unknown
Page : 342 pages
File Size : 44,7 Mb
Release : 2004
Category : Electronic
ISBN : UOM:39015058863625
Author : C. Y. Chang,Francis Kai
Publisher : John Wiley & Sons
Page : 632 pages
File Size : 51,8 Mb
Release : 1994-10-28
Category : Technology & Engineering
ISBN : 047185641X
The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
Author : Robert H. Doremus
Publisher : John Wiley & Sons
Page : 320 pages
File Size : 43,9 Mb
Release : 2001-12-03
Category : Science
ISBN : 047138545X
Die Verteilung reaktiver Moleküle in Festkörpern und Schmelzen wird hier mit Hilfe eines Diffusions-Reaktions-Modells beschrieben. Klar und präzise stellt der Autor, ein anerkannter Spezialist auf diesem Gebiet, die physikalischen und mathematischen Grundlagen von Diffusionsreaktionen dar und illustriert sie am Beispiel spezieller Werkstoffe.
Author : C. H. Bamford,C. F. H. Tipper,R. G. Compton
Publisher : Unknown
Page : 526 pages
File Size : 41,6 Mb
Release : 1969
Category : Electronic
ISBN : 0444416315
Author : Howard C. Berg
Publisher : Springer Science & Business Media
Page : 134 pages
File Size : 44,6 Mb
Release : 2008-01-11
Category : Science
ISBN : 9780387216386
Escherichia coli, commonly referred to as E. coli, has been the organism of choice for molecular genetics for decades. Its machinery and mobile behavior is one of the most fascinating topics for cell scientists. Scientists and engineers, not trained in microbiology, and who would like to learn more about living machines, can see it as a unique example. This cross-disciplinary monograph covers more than thirty years of research and is accessible to graduate students and scientists alike.
Author : Stuart J. Bussell
Publisher : Unknown
Page : 490 pages
File Size : 43,5 Mb
Release : 1992
Category : Electronic
ISBN : CORNELL:31924063592020
Author : E. Kotomin,V. Kuzovkov
Publisher : Elsevier
Page : 611 pages
File Size : 42,9 Mb
Release : 1996-10-24
Category : Science
ISBN : 0080536670
This monograph deals with the effects of reactant spatial correlations arising in the course of basic bimolecular reactions describing defect recombination, energy transfer and exciton annihilation in condensed matter. These effects lead to the kinetics considered abnormal from the standard chemical kinetics point of view. Numerous bimolecular reaction regimes and conditions are analysed in detail. Special attention is paid to the development and numerous applications of a novel, many-point density (MPD) formalism, which is based on Kirkwood's superposition approximation used for decoupling three-particle correlation functions. The book demonstrates that incorporation of the reaction-induced spatial correlations of similar reactants (e.g., vacancy-vacancy) leads to the development of an essentially non-Poisson spectrum of reactant density fluctuations. This can completely change the kinetics at longer times since it no longer obeys the law of mass action. The language of the correlation lengths and critical exponents similar to physics of critical phenomena is used instead. A relation between MPD theory and synergistics is discussed. The validity of the theorem giving a critical complexity for the two-step reactions exhibiting self-organization phenomena is questioned. Theoretical results are illustrated by numerous experimental data.
Author : Baron Peters
Publisher : Elsevier
Page : 634 pages
File Size : 48,8 Mb
Release : 2017-03-22
Category : Technology & Engineering
ISBN : 9780444594709
Reaction Rate Theory and Rare Events bridges the historical gap between these subjects because the increasingly multidisciplinary nature of scientific research often requires an understanding of both reaction rate theory and the theory of other rare events. The book discusses collision theory, transition state theory, RRKM theory, catalysis, diffusion limited kinetics, mean first passage times, Kramers theory, Grote-Hynes theory, transition path theory, non-adiabatic reactions, electron transfer, and topics from reaction network analysis. It is an essential reference for students, professors and scientists who use reaction rate theory or the theory of rare events. In addition, the book discusses transition state search algorithms, tunneling corrections, transmission coefficients, microkinetic models, kinetic Monte Carlo, transition path sampling, and importance sampling methods. The unified treatment in this book explains why chemical reactions and other rare events, while having many common theoretical foundations, often require very different computational modeling strategies. Offers an integrated approach to all simulation theories and reaction network analysis, a unique approach not found elsewhere Gives algorithms in pseudocode for using molecular simulation and computational chemistry methods in studies of rare events Uses graphics and explicit examples to explain concepts Includes problem sets developed and tested in a course range from pen-and-paper theoretical problems, to computational exercises
