Dopants And Defects In Semiconductors Second Edition

Author : Matthew D. McCluskey,Eugene E. Haller
Publisher : CRC Press
Page : 543 pages
File Size : 54,7 Mb
Release : 2018-02-19
Category : Science
ISBN : 9781351977975

Get Book

Dopants and Defects in Semiconductors, Second Edition by Matthew D. McCluskey,Eugene E. Haller Pdf

Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ?Materials Today "... well written, with clear, lucid explanations ..." ?Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.

Author : Matthew D. McCluskey
Publisher : Unknown
Page : 372 pages
File Size : 41,9 Mb
Release : 2012
Category : Semiconductor doping
ISBN : 0429193408

Get Book

Dopants and Defects in Semiconductors by Matthew D. McCluskey Pdf

""The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... The book will be most useful for beginning graduate students in materials science. ... an easy reading, broad introductory overview of the field ... ""--Materials Today, July-August 2012"" ... well written, with clear, lucid explanations ... ""-Chemistry World""The scientific development towards the method of controllable doping transformed the erratic and not reproducible family of semiconductor materials into the truly wonderful basis of modern microelectronics. This book tells the remarka.

Author : Matthew D. McCluskey,Eugene E. Haller
Publisher : CRC Press
Page : 372 pages
File Size : 46,6 Mb
Release : 2012-02-23
Category : Science
ISBN : 9781439831533

Get Book

Dopants and Defects in Semiconductors by Matthew D. McCluskey,Eugene E. Haller Pdf

Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts.The authors first present introductory concepts, including basic semiconductor theory, defect classif

Author : David Redfield,Richard H. Bube
Publisher : Cambridge University Press
Page : 231 pages
File Size : 46,5 Mb
Release : 1996-01-26
Category : Science
ISBN : 9780521461962

Get Book

Photo-induced Defects in Semiconductors by David Redfield,Richard H. Bube Pdf

A thorough review of the properties of deep-level, localized defects in semiconductors.

Author : Jerzy Ruzyllo
Publisher : World Scientific
Page : 264 pages
File Size : 44,9 Mb
Release : 2016-09-15
Category : Technology & Engineering
ISBN : 9789814749565

Get Book

Semiconductor Glossary by Jerzy Ruzyllo Pdf

Semiconductor Glossary is a one of a kind contribution to the pool of publications in the field of semiconductor science and engineering. It was conceived in recognition of an apparent lack of references that would provide brief, straightforward explanations of terms and terminology in the area of advanced semiconductor materials, devices, and processes with emphasis on the most current developments across all areas of nanoelectronics and nanophotonics. With over 2,000 terms defined and explained, the Second Edition of Semiconductor Glossary is the most complete reference in the field of semiconductors on the market today. Using his over 40 years of experience in advanced semiconductor research and teaching, the author selected the terms and then defined and explained them with a broad spectrum of readers in mind. Advanced undergraduate and graduate students, semiconductor professionals at all levels, as well as people with just a general interest in semiconductors should all find Semiconductor Glossary to be a useful resource.

Author : Pradeep Fulay,Jung-Kun Lee
Publisher : CRC Press
Page : 499 pages
File Size : 45,8 Mb
Release : 2016-11-18
Category : Science
ISBN : 9781498701730

Get Book

Electronic, Magnetic, and Optical Materials, Second Edition by Pradeep Fulay,Jung-Kun Lee Pdf

This book integrates materials science with other engineering subjects such as physics, chemistry and electrical engineering. The authors discuss devices and technologies used by the electronics, magnetics and photonics industries and offer a perspective on the manufacturing technologies used in device fabrication. The new addition includes chapters on optical properties and devices and addresses nanoscale phenomena and nanoscience, a subject that has made significant progress in the past decade regarding the fabrication of various materials and devices with nanometer-scale features.

Author : Nickolav T. Bagraev
Publisher : Unknown
Page : 678 pages
File Size : 46,5 Mb
Release : 1993
Category : Electronic
ISBN : OCLC:658187919

Get Book

Defects in Semiconductors I by Nickolav T. Bagraev Pdf

Author : Anonim
Publisher : Academic Press
Page : 458 pages
File Size : 51,6 Mb
Release : 2015-06-08
Category : Science
ISBN : 9780128019405

Get Book

Defects in Semiconductors by Anonim Pdf

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors

Author : Edmund G. Seebauer,Meredith C. Kratzer
Publisher : Springer Science & Business Media
Page : 304 pages
File Size : 55,6 Mb
Release : 2008-11-14
Category : Science
ISBN : 9781848820593

Get Book

Charged Semiconductor Defects by Edmund G. Seebauer,Meredith C. Kratzer Pdf

Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

Author : S. Ashok,J. Chevallier,K. Sumino,B. L. Sopori,W. Götz
Publisher : Cambridge University Press
Page : 0 pages
File Size : 45,6 Mb
Release : 1998-09-14
Category : Technology & Engineering
ISBN : 1558994165

Get Book

Defect and Impurity Engineered Semiconductors II: Volume 510 by S. Ashok,J. Chevallier,K. Sumino,B. L. Sopori,W. Götz Pdf

The evolution of semiconductor devices of progressively higher performance has generally followed improved material quality with ever fewer defect concentrations. However, a shift in focus over the years has brought the realization that complete elimination of defects in semiconductors during growth and processing is neither desirable nor necessary. It is expected that the future role of defects in semiconductors will be one of control - in density, properties, spatial location, and perhaps even temporal variation during the operating lifetime of the device. This book explores the effective use of defect control at various facets of technology and widely different semiconductor materials systems. Topics include: grown-in defects in bulk crystals; doping issues; grown-in defects in thin films; doping and defect issues in wide-gap semiconductors; process-induced defects and gettering; defect properties, reactions, activation and passivation; ion implantation and irradiation effects; defects in devices and interfaces; plasma processing; defect characterization; and interfaces, quantum wells and superlattices.

Author : M.O. Manasreh
Publisher : Elsevier
Page : 463 pages
File Size : 49,8 Mb
Release : 2000-12-06
Category : Science
ISBN : 9780080534442

Get Book

III-Nitride Semiconductors by M.O. Manasreh Pdf

Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Author : S. Ashok
Publisher : Unknown
Page : 522 pages
File Size : 52,6 Mb
Release : 2002-08-09
Category : Technology & Engineering
ISBN : UCSD:31822032144057

Get Book

Defect and Impurity Engineered Semiconductors and Devices III: Volume 719 by S. Ashok Pdf

This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.

Author : S. Ashok,J. Chevallier,P. Kiesel,T. Ogino
Publisher : Cambridge University Press
Page : 390 pages
File Size : 51,9 Mb
Release : 2014-06-05
Category : Technology & Engineering
ISBN : 1107408695

Get Book

Semiconductor Defect Engineering: Volume 994 by S. Ashok,J. Chevallier,P. Kiesel,T. Ogino Pdf

This book, first published in 2007, focuses on the application of defects and impurities in current and emerging semiconductor technologies. The role of defects in the evolution of semiconductor technology is now recognized as one of refined control - in density, properties, spatial location, and perhaps even temporal variation during device operating lifetime. The concept of defect engineering has found numerous applications in the fabrication of semiconductors and devices with improved and/or new properties, and new trends extend defect engineering in structures with nm dimensions. This book shows interaction among researchers pursing effective use of defect incorporation and control at various facets of technology and widely different semiconductor materials systems. Topics include: dopant and defect issues in oxide and nitride semiconductors; defect properties, activation and passivation; defects in nanostructures and organic semiconductors; ion implantation and beam processing; defect characterization; heterojunctions and interfaces; process-induced defects; dopants and defects in group-IV semiconductors and defects in devices.

Author : Evgeny Y. Tsymbal,Igor Žutić
Publisher : CRC Press
Page : 530 pages
File Size : 48,8 Mb
Release : 2019-05-20
Category : Science
ISBN : 9780429784378

Get Book

Spintronics Handbook, Second Edition: Spin Transport and Magnetism by Evgeny Y. Tsymbal,Igor Žutić Pdf

The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.

Author : Jacques I. Pankove,Noble M. Johnson
Publisher : Academic Press
Page : 648 pages
File Size : 48,8 Mb
Release : 1991-04-23
Category : Technology & Engineering
ISBN : 0080864317

Get Book

Hydrogen in Semiconductors by Jacques I. Pankove,Noble M. Johnson Pdf

Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference