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Author : Jingming Xu
Publisher : Unknown
Page : 310 pages
File Size : 48,5 Mb
Release : 1987
Category : Electronic
ISBN : MINN:31951002220775C
Author : Giovanni Ghione
Publisher : Unknown
Page : 481 pages
File Size : 42,8 Mb
Release : 2014-05-14
Category : Technology & Engineering
ISBN : 0511635141
An all-inclusive treatment of high-speed electronic and optoelectronic devices, emphasizing circuit applications and advanced device design solutions.
Author : Naci Balkan,Ayşe Erol
Publisher : Springer
Page : 0 pages
File Size : 51,9 Mb
Release : 2021-10-12
Category : Technology & Engineering
ISBN : 3319449346
This book provides in-depth knowledge about the fundamental physical properties of bulk and low dimensional semiconductors (LDS). It also explains their applications to optoelectronic devices. The book incorporates two major themes. The first theme, starts from the fundamental principles governing the classification of solids according to their electronic properties and leads to a detailed analysis of electronic band structure and electronic transport in solids. It then focuses on the electronic transport and optical properties of semiconductor compounds, size quantization and the analysis of abrupt p-n junctions where a full analysis of the fundamental properties of intrinsic and doped semiconductors is given. The second theme is device-oriented. It aims to provide the reader with understanding of the design, fabrication and operation of optoelectronic devices based on novel semiconductor materials, such as high-speed photo detectors, light emitting diodes, multi-mode and single-mode lasers and high efficiency solar cells. The book appeals to researchers and high-level undergraduate students.
Author : M Razeghi,Mohamed Henini
Publisher : Elsevier
Page : 602 pages
File Size : 46,5 Mb
Release : 2004
Category : Science
ISBN : 0080444261
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Author : C. Y. Chang,Francis Kai
Publisher : John Wiley & Sons
Page : 642 pages
File Size : 52,5 Mb
Release : 1994-10-28
Category : Technology & Engineering
ISBN : 9780471856412
The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
Author : Jasprit Singh
Publisher : Cambridge University Press
Page : 556 pages
File Size : 43,8 Mb
Release : 2007-03-26
Category : Technology & Engineering
ISBN : 9781139440578
A graduate textbook presenting the underlying physics behind devices that drive today's technologies. The book covers important details of structural properties, bandstructure, transport, optical and magnetic properties of semiconductor structures. Effects of low-dimensional physics and strain - two important driving forces in modern device technology - are also discussed. In addition to conventional semiconductor physics the book discusses self-assembled structures, mesoscopic structures and the developing field of spintronics. The book utilizes carefully chosen solved examples to convey important concepts and has over 250 figures and 200 homework exercises. Real-world applications are highlighted throughout the book, stressing the links between physical principles and actual devices. Electronic and Optoelectronic Properties of Semiconductor Structures provides engineering and physics students and practitioners with complete and coherent coverage of key modern semiconductor concepts. A solutions manual and set of viewgraphs for use in lectures are available for instructors, from [email protected].
Author : Kevin F. Brennan,P. Paul Ruden
Publisher : World Scientific
Page : 270 pages
File Size : 45,6 Mb
Release : 2001
Category : Technology & Engineering
ISBN : 9789810246716
This book examines some of the charge carrier transport issues encountered in the field of modern semiconductor devices and novel materials. Theoretical approaches to the understanding and modeling of the relevant physical phenomena, seen in devices that have very small spatial dimensions and that operate under high electric field strength, are described in papers written by leading experts and pioneers in this field. In addition, the book examines the transport physics encountered in novel materials such as wide band gap semiconductors (GaN, SiC, etc.) as well as organic semiconductors. Topics in High Field Transport in Semiconductors provides a comprehensive overview that will be beneficial to newcomers as well as engineers and researchers engaged in this exciting field.
Author : A. Miller
Publisher : CRC Press
Page : 990 pages
File Size : 51,6 Mb
Release : 2020-12-18
Category : Science
ISBN : 9781000154375
The development and application of low-dimensional semiconductors have been rapid and spectacular during the past decade. Ever improving epitaxial growth and device fabrication techniques have allowed access to some remarkable new physics in quantum confined structures while a plethora of new devices has emerged. The field of optoelectronics in particular has benefited from these advances both in terms of improved performance and the invention of fundamentally new types of device, at a time when the use of optics and lasers in telecommunications, broadcasting, the Internet, signal processing, and computing has been rapidly expanding. An appreciation of the physics of quantum and dynamic electronic processes in confined structures is key to the understanding of many of the latest devices and their continued development. Semiconductor Quantum Optoelectronics covers new physics and the latest device developments in low-dimensional semiconductors. It allows those who already have some familiarity with semiconductor physics and devices to broaden and expand their knowledge into new and expanding topics in low-dimensional semiconductors. The book provides pedagogical coverage of selected areas of new and pertinent physics of low-dimensional structures and presents some optoelectronic devices presently under development. Coverage includes material and band structure issues and the physics of ultrafast, nonlinear, coherent, intersubband, and intracavity phenomena. The book emphasizes various devices, including quantum wells, visible, quantum cascade, and mode-locked lasers; microcavity LEDs and VCSELs; and detectors and logic elements. An underlying theme is high-speed phenomena and devices for increased system bandwidths.
Author : Nodar Kekelidze,Elza Khutsishvili,Georgy Kekelidze,Tengiz Qamushadze
Publisher : Cambridge Scholars Publishing
Page : 243 pages
File Size : 44,7 Mb
Release : 2022-09-23
Category : Juvenile Nonfiction
ISBN : 9781527588936
Semiconductor-based devices with increased reliability, low cost, unusual lightness, small size, and minimal service have become an important part of our daily lives. It is difficult to imagine life without electronic vehicles, TVs, computers, smartphones, medical networks, and global e-commerce. As this book argues, semiconductors are the main “driving force” behind economic strength, national security, and resilience in times of crisis. However, novel types of semiconductors are needed in order to support ever-growing scaling demands today. Developing semiconductors with desired properties, such as tolerance to radiation, for instance, is of crucial importance. InAs-InP solid solutions present an example of such materials used for cutting-edge electronic technologies. Packed with diagrams and accompanying detailed computations, this book provides a comprehensive coverage of InAs1-xPx solid solutions, from the production of single bulk crystals and layers to the thorough study of their properties and to their inexhaustible application potential in electronics.
Author : Anonim
Publisher : Cambridge University Press
Page : 480 pages
File Size : 40,9 Mb
Release : 2024-07-03
Category : Electronic
ISBN : 8210379456XXX
Author : Uttam Singisetti,Towhidur Razzak,Yuewei Zhang
Publisher : World Scientific
Page : 258 pages
File Size : 42,7 Mb
Release : 2019-12-10
Category : Technology & Engineering
ISBN : 9789811216497
'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.
Author : Joachim Piprek
Publisher : CRC Press
Page : 835 pages
File Size : 50,6 Mb
Release : 2017-10-10
Category : Science
ISBN : 9781498749473
• Provides a comprehensive survey of fundamental concepts and methods for optoelectronic device modeling and simulation. • Gives a broad overview of concepts with concise explanations illustrated by real results. • Compares different levels of modeling, from simple analytical models to complex numerical models. • Discusses practical methods of model validation. • Includes an overview of numerical techniques.
Author : P. C. Chang,S. N. G. Chu,D. N. Buckley,Electrochemical Society. Electronics Division
Publisher : The Electrochemical Society
Page : 180 pages
File Size : 40,6 Mb
Release : 2001
Category : Technology & Engineering
ISBN : 1566773539
Author : Kuldeep Singh
Publisher : Unknown
Page : 0 pages
File Size : 54,6 Mb
Release : 2023-09-11
Category : Education
ISBN : 8329631842
This is a comprehensive guidebook that covers the principles and applications of electron transport in materials for optoelectronic devices. The book starts with an introduction to the basics of electron transport, including the concept of conductivity, mobility, and carrier concentration. It then delves into the specific properties of materials that are used in optoelectronic devices, such as semiconductors, metals, and insulators. The author discusses the various techniques used to measure electron transport properties, including electrical and optical methods. He also covers the challenges and limitations associated with these techniques, as well as strategies to overcome them. The book then explores the use of electron transport properties in various optoelectronic devices, such as solar cells, light-emitting diodes, and photodetectors. The author describes the key components of these devices, including the materials used, device structures, and working principles. He also discusses the role of electron transport in device performance and optimization. Overall, "Electron Transport Properties for Optoelectronic Devices" provides a comprehensive overview of electron transport in materials for optoelectronic devices. It is an essential reference for researchers and graduate students working in the field of optoelectronics, as well as for professionals in industry who are involved in the design and development of optoelectronic devices.
Author : Safa Kasap,Peter Capper
Publisher : Springer
Page : 1536 pages
File Size : 55,5 Mb
Release : 2017-10-04
Category : Technology & Engineering
ISBN : 9783319489339
The second, updated edition of this essential reference book provides a wealth of detail on a wide range of electronic and photonic materials, starting from fundamentals and building up to advanced topics and applications. Its extensive coverage, with clear illustrations and applications, carefully selected chapter sequencing and logical flow, makes it very different from other electronic materials handbooks. It has been written by professionals in the field and instructors who teach the subject at a university or in corporate laboratories. The Springer Handbook of Electronic and Photonic Materials, second edition, includes practical applications used as examples, details of experimental techniques, useful tables that summarize equations, and, most importantly, properties of various materials, as well as an extensive glossary. Along with significant updates to the content and the references, the second edition includes a number of new chapters such as those covering novel materials and selected applications. This handbook is a valuable resource for graduate students, researchers and practicing professionals working in the area of electronic, optoelectronic and photonic materials.