Festkörper Probleme Ix

Festkörper Probleme Ix Book in PDF, ePub and Kindle version is available to download in english. Read online anytime anywhere directly from your device. Click on the download button below to get a free pdf file of Festkörper Probleme Ix book. This book definitely worth reading, it is an incredibly well-written.

Festkörper Probleme IX

Author : O. Madelung
Publisher : Elsevier
Page : 401 pages
File Size : 42,7 Mb
Release : 2013-10-22
Category : Science
ISBN : 9781483145914

Get Book

Festkörper Probleme IX by O. Madelung Pdf

Festkörper Probleme IX: Advances in Solid State Physics presents a model for the behavior of electrons in non-crystalline materials. This book describes some experimental evidence that supports for the behavior of electrons. Organized into 16 chapters, this book begins with an overview of crystallization, glass forming, and melting processes in systems forming chalcogenide glasses. This text then describes the theory of the transport properties of electrons in non-crystalline solids and liquids. Other chapters consider the optical and electrical properties of amorphous semiconductors wherein the treatment is mainly restricted to the elements selenium, germanium, and tellurium. This book discusses as well the basic aspects of the optical phenomena of the Jahn–Teller effect, with emphasis on some criteria of the strength and observability of the Jahn–Teller effect. The final chapter deals with the methods for processing emulsion and metal film masks. This book is a valuable resource for solid state physicists.

Festkörper Probleme XI

Author : O. Madelung
Publisher : Elsevier
Page : 312 pages
File Size : 54,7 Mb
Release : 2016-06-06
Category : Science
ISBN : 9781483150659

Get Book

Festkörper Probleme XI by O. Madelung Pdf

Festkörperprobleme XI: Advances in Solid State Physics reviews advances in solid state physics and covers topics ranging from localized vibrational modes in semiconductors to isoelectric impurities in semiconductors, deep impurities, and liquid crystals. Elastic and inelastic electron tunneling through potential barriers in solids is also discussed, along with plasma physics and astrophysics. This book is comprised of 14 chapters and begins with a review of the theoretical and experimental requirements for the observation of high frequency, localized vibrational modes of impurities in a crystal lattice. The reader is then introduced to the properties of deep impurity levels in semiconductors. Some typical examples of isoelectronic impurities are presented, and theories of isoelectronic traps are considered. Subsequent chapters focus on the properties of the various types of liquid crystalline phases (nematic, cholesteric, and smectic); a few astrophysical problems for which the properties of the astrophysical plasma are important; and the use of stochastic models to probe the kinetics of phase transitions. Experimental results for elastic and inelastic electron tunneling through potential barriers in solids are also presented. This monograph will be of interest to physicists.

Festkörper Probleme VIII

Author : O. Madelung
Publisher : Elsevier
Page : 321 pages
File Size : 45,6 Mb
Release : 2013-09-11
Category : Science
ISBN : 9781483140346

Get Book

Festkörper Probleme VIII by O. Madelung Pdf

Festkörper Probleme VIII reviews the status of radiation damage in semiconducting materials and components. This book examines the problems connected to the mechanism of production of defects by bombardment with energetic particles, particularly the displacement energy. Comprised of nine chapters, this book begins with an overview of the microstructure of radiation defects in silicon, which is known from optical absorption experiments and electron spin resonance. This text then explains the preparation of single crystals of high purity or defined impurity contents, which is the basis of successful solid state research. Other chapters consider the widespread application of vapor phase reactions. This book discusses as well mechanism of latent image formation, which considers some advances in silver halide research. The final chapter explains the useful information that can be obtained by a study of the field effects. This book is a valuable resource for solid state physicists as well as applied physicists.

Advances in Solid State Physics

Author : O. Madelung
Publisher : Elsevier
Page : 444 pages
File Size : 55,8 Mb
Release : 2013-10-22
Category : Technology & Engineering
ISBN : 9781483156699

Get Book

Advances in Solid State Physics by O. Madelung Pdf

Festkorperprobleme X: Advances in Solid State Physics is a compilation of papers and lectures on semiconductor physics, low temperature physics, thermodynamics, and metal physics of the German Physical Society, Freudenstadt, on April 6-11, 1970. This volume is a collection of 13 papers in English and German on the abovementioned subjects. The book describes some characteristics of the different families of narrow bandgap semiconductors; the result arising from the interaction between free carriers and acoustic waves in solids; and the advances made in the field of modulation spectroscopy. The text further discusses the relations between the state of the photoemitted electrons and the absorption process in the solid. In Chapter 8, applications to various problems in semiconductor physics are dealt with. The Empirical Pseudopotential Method and the theory of phonon dispersion curves from a pseudopotential point of view are also considered. Further examined is the Ginzburg-Landau theory of superconductivity in relation to the probability distribution of the electric field strength of laser light that has a form completely analogous to that of the pair wave function of the theory. The implications of the thermodynamics of point defects in imperfect crystals and the association of foreign ions and vacancies due to their Coulomb interaction, resulting in complexes, are investigated. This book is of interest to electrical engineers, research engineers, professors, and students in theoretical or experimental physics.

Festk̈orper Probleme IX

Author : Otfried Madelung
Publisher : Unknown
Page : 389 pages
File Size : 44,6 Mb
Release : 1969
Category : Solid state physics
ISBN : OCLC:220682623

Get Book

Festk̈orper Probleme IX by Otfried Madelung Pdf

Festkörper Probleme IX

Author : Otfried Madelung
Publisher : Unknown
Page : 128 pages
File Size : 53,6 Mb
Release : 1969
Category : Electronic
ISBN : OCLC:500538964

Get Book

Festkörper Probleme IX by Otfried Madelung Pdf

Festkörperprobleme

Author : P. Grosse
Publisher : Springer
Page : 323 pages
File Size : 50,7 Mb
Release : 2007-10-01
Category : Science
ISBN : 9783540753568

Get Book

Festkörperprobleme by P. Grosse Pdf

Festkörper Probleme

Author : H. J. Queisser
Publisher : Elsevier
Page : 405 pages
File Size : 45,6 Mb
Release : 2013-10-22
Category : Science
ISBN : 9781483157672

Get Book

Festkörper Probleme by H. J. Queisser Pdf

Festkorper Probleme XIII: Advances in Solid State Physics is a collection of papers from plenary lectures of the solid states division of the German Physical Society in Munster, on March 19-24, 1973. This collection deals with semiconductor physics, surface phenomena, and surface physics. One paper reviews the findings on experiments on the magnetic, optical, electrical, and structural properties of layer type crystals, particularly metal dichalcogenides. This book then discusses the van der Waals attraction using semi-classical methods to explain the correlation in different atoms. This discussion explains the application of the Schrodinger formalism and the Maxwell equations. One paper also reviews the energy distribution of electrons emitted from solids after ultraviolet radiation or monochromatic X-ray exposure. Another paper reviews the use of clean silicon surfaces associated with electron emitters showing ""negative electron affinity."" A paper then reviews the mechanism of charge-transfer devices, with emphasis on the physics of the transfer processes that happen in surface charge-coupled devices or bulk-charge-couple devices. This compendium will prove useful for materials physicists, scientists, and academicians in the field of advanced physics.

Festkörper Probleme

Author : O. Madelung
Publisher : Elsevier
Page : 293 pages
File Size : 54,5 Mb
Release : 2017-07-31
Category : Technology & Engineering
ISBN : 9781483155975

Get Book

Festkörper Probleme by O. Madelung Pdf

Festkorper Probleme VII covers papers of the European Meeting of the IEEE about Semiconductor Device Research. The book includes papers about the advances in band structures investigations using optical techniques; some problems in the physics of power rectifiers and thyristors; the surface properties of thermally oxidized silicon; and the amplification of acoustic waves at microwave frequencies. The text also presents papers about active thin film devices, optoelectronic devices, and negative conductance in semiconductors. Electrical engineers will find the book invaluable.

Semiconductors

Author : T. F. Connolly
Publisher : Springer Science & Business Media
Page : 223 pages
File Size : 42,8 Mb
Release : 2012-12-06
Category : Science
ISBN : 9781468462012

Get Book

Semiconductors by T. F. Connolly Pdf

And often on request from the issuing installation. USAEC reports are also available from International Atomic Energy Agency Kaerntnerring A 1010 Vienna, Austria National Lending Library Boston Spa, England Monographs and reports of the National Bureau 01 Standards are for sale by Superintendent of Documents U.S. Government Printing Office Washington, D.C. 20402 Theses, listed as Dissertation Abstracts + number, are available in North and South America from University Microfilms Dissertation Copies P.O. Box 1764 Ann Arbor, Michigan 48106 and elsewhere from University Microfilms, Ltd. St. John's Road Tylers Green Penn, Buckinghamshire England Conlenls Addendum ... xiii 1. Information Centers and Other Services ... 1 2. Journals ... 3 3. Methods of Crystal Growth - Books and Reviews ... 5 4. Semiconductors - General, Reviews, and Bibliographies ... 11 5. 1-V -VI Compounds ... 21 6. li-IV - V2 Compounds ... 23 7. II - V Compounds ... 29 a. General, Reviews, and Bibliographies ... 29 b. Zinc Compounds ... 30 1. Zn3P2" .. . .. . .. . . .. ... .. ... . .. ... . . .. ... .. . . 30 2. ZnAs ... 30 3. ZnSb ... 30 4. Zn Mixed Systems ... 31 c. Cadmium Compounds ... 31 31 1. Cd3P2' ... 2. Cd3As2 ... 31 3. CdSb, Cd3Sb2 ... 33 37 8. li-VI Compounds ... a. General, Reviews, and Bibliographies ... ... 37 ... b. Zinc Compounds ... . ... ... 39 ... 1. ZnO ... 39 Preparation and Properties ... 39 Electrical Properties ... ... 41 ... Optical Properties ... ... 45 ... Physical Properties and Structure ... ... 47 ... 2. ZnS ... 49 3. ZnSe ... 52 4. ZnTe ... ' ... 54 5. Zn Mixed Systems. ... ... 55 ... 55 c. Cadmium Compounds ... 55 1. CdS ... 2. CdSe ... 60 3. CdTe ... 61 4. CdTernaries ... ... 62 ... d. Mercury Compounds ... ... . 64 ...

Semiconductor Physics

Author : Karlheinz Seeger
Publisher : Springer Science & Business Media
Page : 534 pages
File Size : 41,6 Mb
Release : 2013-06-29
Category : Technology & Engineering
ISBN : 9783662037973

Get Book

Semiconductor Physics by Karlheinz Seeger Pdf

This book will be useful to solid-state scientists, device engineers, and students involved in semiconductor design and technology. It provides a lucid account of band structure, density of states, charge transport, energy transport, and optical processes, along with a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, and the quantum Hall effect. This 7th edition has been revised and updated, including several new sections.

Raman Spectroscopy

Author : Herman Szymanski
Publisher : Springer Science & Business Media
Page : 226 pages
File Size : 49,9 Mb
Release : 2013-06-29
Category : Science
ISBN : 9781468430271

Get Book

Raman Spectroscopy by Herman Szymanski Pdf

Raman Spectroscopy, Volume 1, was conceived to provide integrated and comprehensive coverage of all aspects of the field by a group of specialists. However, in the three years since the first volume was published much important work has been done. Since Volume 1 was very well received, this second volume has been prepared in the belief that an extension of the coverage it offers will satisfy a real need in this rapidly changing and extremely interesting field. Any pretension to comprehensive coverage, however, had to be abandoned. In order to keep the material in a work of this nature up to date, a cutoff date has to be set. Inevitably one or two of the planned articles fail to materialize by this deadline, and other interesting topics may come into focus too late to permit the preparation of a worthwhile discussion by the target date. Still, in fairness to those authors who kept to the schedule, the cutoff date has to be enforced, even though this means sacrificing breadth of coverage to timeliness. I wish to thank all the contributors to this volume for their effort, their cooperation, and their punctuality, and it is my hope that the policy I have followed will result in the presentation of current thought on a series of interesting aspects of the subject of Raman spectroscopy. May 1970 H.A.S. Contents Chapter 1 Vibrational Rules of Selection and Polarization: Their Practical Uses and Limitations .................... .

The Publishers' Trade List Annual

Author : Anonim
Publisher : Unknown
Page : 1996 pages
File Size : 46,9 Mb
Release : 1977
Category : American literature
ISBN : UOM:39015085507450

Get Book

The Publishers' Trade List Annual by Anonim Pdf

Ion Implantation in Semiconductors

Author : Ingolf Ruge,J. Graul
Publisher : Springer Science & Business Media
Page : 519 pages
File Size : 52,7 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9783642806605

Get Book

Ion Implantation in Semiconductors by Ingolf Ruge,J. Graul Pdf

In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume contains the papers that were presented at the Conference. Due to the tremendous volume of research presented, publication here of all the works in full detail was not possible. Many authors therefore graciously agreed to submit abbreviated versions of their papers.

Ion Implantation in Semiconductors and Other Materials

Author : Billy Crowder
Publisher : Springer Science & Business Media
Page : 644 pages
File Size : 53,6 Mb
Release : 2013-03-13
Category : Science
ISBN : 9781468420647

Get Book

Ion Implantation in Semiconductors and Other Materials by Billy Crowder Pdf

During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch Partenkirchen, Germany, in 1971. At the present time, our under standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research.