Heavily Doped Semiconductors

Author : V. I. Fistul
Publisher : Springer Science & Business Media
Page : 428 pages
File Size : 47,6 Mb
Release : 2012-12-06
Category : Science
ISBN : 9781468488210

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Heavily Doped Semiconductors by V. I. Fistul Pdf

Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, par ticularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, sec ondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of dis ordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. 1. Pan kove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE portunity to become acquainted with the work done in the USSR.

Author : Viktor I. Fistul'
Publisher : Unknown
Page : 0 pages
File Size : 52,8 Mb
Release : 1969
Category : Electronic
ISBN : OCLC:630380785

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Heavily Doped Semiconductors by Viktor I. Fistul' Pdf

Author : B.I. Shklovskii,A.L. Efros
Publisher : Springer Science & Business Media
Page : 400 pages
File Size : 53,5 Mb
Release : 2013-11-09
Category : Science
ISBN : 9783662024034

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Electronic Properties of Doped Semiconductors by B.I. Shklovskii,A.L. Efros Pdf

First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.

Author : Viktor Leopolʹdovich Bonch-Bruevich
Publisher : Unknown
Page : 154 pages
File Size : 53,6 Mb
Release : 1966
Category : Semiconductors
ISBN : UOM:39015002917436

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The Electronic Theory of Heavily Doped Semiconductors by Viktor Leopolʹdovich Bonch-Bruevich Pdf

Author : D.M. Finlayson
Publisher : CRC Press
Page : 438 pages
File Size : 42,5 Mb
Release : 1986-01-01
Category : Science
ISBN : 090594514X

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Localisation and Interaction by D.M. Finlayson Pdf

Localisation and Interaction covers the scaling theory of localization metal-insulator transitions, two-dimensional systems, interaction effects in impure metals, weak localization, critical point measurement, quantum wells, integer quantum Hall effects, magnetic field induced transitions, static and dynamic magnetic probes, band gap narrowing, and an experiment with the quantum Hall effects.

Author : Kamakhya P. Ghatak,Sitangshu Bhattacharya
Publisher : Springer
Page : 347 pages
File Size : 49,6 Mb
Release : 2014-07-30
Category : Science
ISBN : 9783319083803

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Heavily-Doped 2D-Quantized Structures and the Einstein Relation by Kamakhya P. Ghatak,Sitangshu Bhattacharya Pdf

This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.

Author : Kamakhya Prasad Ghatak
Publisher : Springer
Page : 625 pages
File Size : 50,9 Mb
Release : 2015-10-26
Category : Technology & Engineering
ISBN : 9783319210001

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Dispersion Relations in Heavily-Doped Nanostructures by Kamakhya Prasad Ghatak Pdf

This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.

Author : Ghatak Kamakhya Prasad
Publisher : World Scientific
Page : 756 pages
File Size : 42,6 Mb
Release : 2016-12-08
Category : Science
ISBN : 9789813146532

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Quantum Effects, Heavy Doping, And The Effective Mass by Ghatak Kamakhya Prasad Pdf

The importance of the effective mass (EM) is already well known since the inception of solid-state physics and this first-of-its-kind monograph solely deals with the quantum effects in EM of heavily doped (HD) nanostructures. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, II-VI, IV-VI, and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices change the band structure of semiconductors in fundamental ways, which have also been incorporated in the study of EM in HD quantized structures of optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under intense external fields has also been discussed in this context. The influences of magnetic quantization, crossed electric and quantizing fields, electric field and light waves on the EM in HD semiconductors and super-lattices are discussed. The content of this book finds twenty-eight different applications in the arena of nano-science and nano-technology. This book contains 200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the fields of condensed matter physics, materials science, solid state sciences, nano-science and technology and allied fields in addition to the graduate courses in semiconductor nanostructures. The book is written for post-graduate students, researchers, engineers and professionals in the fields of condensed matter physics, solid state sciences, materials science, nanoscience and technology and nanostructured materials in general.

Author : Kamakhya Prasad Ghatak,Madhuchhanda Mitra
Publisher : World Scientific
Page : 1036 pages
File Size : 45,6 Mb
Release : 2021-03-15
Category : Science
ISBN : 9789811229480

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Elastic Constants In Heavily Doped Low Dimensional Materials by Kamakhya Prasad Ghatak,Madhuchhanda Mitra Pdf

The elastic constant (EC) is a very important mechanical property of the these materials and its significance is already well known in literature. This first monograph solely deals with the quantum effects in EC of heavily doped (HD) low dimensional materials. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb₂, stressed materials, GaSb, Te, II-V, Bi₂Te₃, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, II-VI, IV-VI, and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices changes the band structure of semiconductors in fundamental ways, which have also been incorporated in the study of EC in HD low dimensional optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under intense external fields has also been discussed in this context. The influences of magnetic quantization, crossed electric and quantizing fields, electric field and light waves on the EC in HD semiconductors and super-lattices are discussed.The content of this book finds twenty-five different applications in the arena of nano-science and nano-technology. We The authors have discussed the experimental methods of determining the Einstein Relation, screening length and EC in this context. This book contains circa 200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the fields of condensed matter physics, materials science, solid state sciences, nano-science and technology and allied fields in addition to the graduate courses in semiconductor nanostructures.

Author : Dinesh C. Dube
Publisher : Alpha Science Int'l Ltd.
Page : 372 pages
File Size : 45,5 Mb
Release : 2005
Category : Technology & Engineering
ISBN : 1842652796

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Electronics by Dinesh C. Dube Pdf

This book provides a concise and comprehensive account of circuit design and analysis suitable for undergraduate honours and graduate courses in physics.

Author : Ulf Ekenberg
Publisher : Unknown
Page : 144 pages
File Size : 48,7 Mb
Release : 1983
Category : Electronic
ISBN : UCAL:B3523654

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Impurity States in Heavily Doped Superlattices and in Other Semiconductor Materials by Ulf Ekenberg Pdf

Author : Freeman D. Shepherd (Jr.)
Publisher : Unknown
Page : 98 pages
File Size : 52,8 Mb
Release : 1965
Category : Energy-band theory of solids
ISBN : UOM:39015095287481

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A Study of Band Edge Distortion in Heavily Doped Germanium by Freeman D. Shepherd (Jr.) Pdf

Details of the energy band structure of degenerate n-type germanium were determined by analysis of fine structure in the 4.2K volt-ampere characteristic of germanium tunnel diodes. No shift in the relative energy of the conduction band minima was observed. The band edge is found to be exponentially distributed with 1/e energies of the order of 10 MeV. There appears to be an ordering mechanism among the group V impurity atoms used as substrate dopants. (Author).

Author : Anonim
Publisher : Academic Press
Page : 394 pages
File Size : 40,7 Mb
Release : 1993-08-10
Category : Technology & Engineering
ISBN : 0080864368

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Semiconductors and Semimetals by Anonim Pdf

Semiconductors and Semimetals

Author : Sitangshu Bhattacharya,Kamakhya Prasad Ghatak
Publisher : Springer Science & Business Media
Page : 549 pages
File Size : 43,9 Mb
Release : 2012-10-06
Category : Science
ISBN : 9783642312472

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Effective Electron Mass in Low-Dimensional Semiconductors by Sitangshu Bhattacharya,Kamakhya Prasad Ghatak Pdf

This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics.

Author : Anonim
Publisher : ASTM International
Page : 257 pages
File Size : 49,5 Mb
Release : 1980
Category : Electronic
ISBN : 8210379456XXX

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Lifetime Factors in Silicon by Anonim Pdf