Inp Based Materials And Devices

Author : Osamu Wada,Hideki Hasegawa
Publisher : Wiley-Interscience
Page : 616 pages
File Size : 51,9 Mb
Release : 1999-04-13
Category : Science
ISBN : UOM:39015046474220

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InP-Based Materials and Devices by Osamu Wada,Hideki Hasegawa Pdf

A comprehensive guide to current techniques, applications, and trends in InP-based technologies. Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include: * Basic materials physics involved in a wide range of InP-based compounds. * Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE. * Hetero-interface control and dry process techniques for device fabrication. * High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications. * Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks. * Optoelectronic integration and packing for functional, low-cost modules.

Author : Delong Cui
Publisher : Unknown
Page : 658 pages
File Size : 51,8 Mb
Release : 2001
Category : Electronic
ISBN : UOM:39015054115046

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InP-based Materials and Heterostructure Devices, and the Applications in Monolithic Integrated NPN and PNP HBT Circuits by Delong Cui Pdf

Author : Nadine Collaert
Publisher : Elsevier
Page : 369 pages
File Size : 44,6 Mb
Release : 2024-01-24
Category : Technology & Engineering
ISBN : 9780128234501

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New Materials and Devices Enabling 5G Applications and Beyond by Nadine Collaert Pdf

New Materials and Devices for 5G Applications and Beyond focuses on the materials, device architectures and enabling integration schemes for 5G applications and emerging technologies. It gives a comprehensive overview of the trade-offs, challenges and unique properties of novel upcoming technologies. Starting from the application side and its requirements, the book examines different technologies under consideration for the different functions, both more conventional to exploratory, and within this context the book provides guidance to the reader on how to possibly optimize the system for a particular application. This book aims at guiding the reader through the technologies required to enable 5G applications, with the main focus on mm-wave frequencies, up to THz. New Materials and Devises for 5G Applications and Beyond is suitable for industrial researchers and development engineers, and researchers in materials science, device engineering and circuit design. Reviews challenges and emerging opportunities for materials, devices, and integration to enable 5G technologies Includes discussion of technologies such as RF-MEMs, RF FINFETs, and transistors based on current and emerging materials (InP, GaN, etc.) Focuses on mm-wave frequencies up to the terahertz regime

Author : R. Szweda
Publisher : Elsevier
Page : 446 pages
File Size : 45,9 Mb
Release : 2000-07-07
Category : Technology & Engineering
ISBN : 0080532306

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Gallium Nitride and Related Wide Bandgap Materials and Devices by R. Szweda Pdf

The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

Author : Anonim
Publisher : Unknown
Page : 128 pages
File Size : 49,7 Mb
Release : 2024-06-29
Category : Electronic
ISBN : 9789814498210

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Emerging Optoelectronic Technologies and Applications by Anonim Pdf

Author : Kyushik Hong
Publisher : Unknown
Page : 532 pages
File Size : 48,9 Mb
Release : 1996
Category : Electronic
ISBN : UOM:39015037440156

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Growth of InP-based Materials and Heterostructures Using Metalorganic Vapor Phase Epitaxy for High Frequency Device Applications by Kyushik Hong Pdf

Author : M O Manasreh
Publisher : CRC Press
Page : 856 pages
File Size : 46,5 Mb
Release : 2014-04-21
Category : Technology & Engineering
ISBN : 9781482282986

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InP and Related Compounds by M O Manasreh Pdf

InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.

Author : Tao Han,Haibo Ruan,Shixiu Cao,Youwei Guan,Dianyong Tang,Xin Yang
Publisher : World Scientific
Page : 494 pages
File Size : 43,6 Mb
Release : 2021-05-25
Category : Science
ISBN : 9789811230622

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Photoelectric Materials And Devices by Tao Han,Haibo Ruan,Shixiu Cao,Youwei Guan,Dianyong Tang,Xin Yang Pdf

This book mainly introduces the basic theory and physical characteristics of photoelectric materials, the preparation technology of photoelectric components, the working principle, the latest application, the latest progress of photoelectric materials and devices technology and the correlation with other technologies. The content mainly involves the theoretical basis of photoelectric materials, micro-nano photoelectric materials and devices, semiconductor luminescent materials and devices, inorganic photoluminescence materials, LED packaging technology, transparent conductive materials, touch screen, display screen, solar cell materials and the basic principles and development trend of their applications. In particular, the book gives a systematic theoretical analysis of new photoelectric materials and devices, such as optoelectronic materials and devices, transparent conductive materials, and provides application examples.

Author : P. C. Chang
Publisher : The Electrochemical Society
Page : 500 pages
File Size : 50,7 Mb
Release : 2005
Category : Technology & Engineering
ISBN : 1566774624

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State-of-the-Art Program on Compound Semiconductors : (SOTAPOCS XLII) and Processes at the Compound-Semiconductor/Solution Interface by P. C. Chang Pdf

Author : S. Coffa,G. Ferla,E. Rimini,F. Priolo
Publisher : Newnes
Page : 1031 pages
File Size : 55,5 Mb
Release : 1995-05-16
Category : Science
ISBN : 9780444599728

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Ion Implantation Technology - 94 by S. Coffa,G. Ferla,E. Rimini,F. Priolo Pdf

The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters. The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.

Author : S J Pearton,C R Abernathy,F Ren
Publisher : World Scientific
Page : 560 pages
File Size : 46,8 Mb
Release : 1996-11-09
Category : Technology & Engineering
ISBN : 9789814501590

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Topics in Growth and Device Processing of III-V Semiconductors by S J Pearton,C R Abernathy,F Ren Pdf

This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems. Contents:Compound Semiconductor Growth by Metalorganic Molecular Beam Epitaxy (MOMBE)Growth of Heterojunction Bipolar Transistors from Molecular BeamsHeteroepitaxyImplant Doping and IsolationRapid Thermal AnnealingWet and Dry Etching of III-V SemiconductorsHydrogen in Crystalline Semiconductors: III-V CompoundsHeterojunction Bipolar Transistors: Processing and DevicesNovel Heterostructure Field Effect Transistors Readership: Engineers and condensed matter physicists. keywords:Arsenide;Indium Phosphide;Processing;Semiconductors;Etching;Implantation;Contacts;Implant Isolation;Field Effect Transistors;GaAs-on-Si

Author : Handong Li,Zhiming M. Wang
Publisher : Springer Science & Business Media
Page : 383 pages
File Size : 42,6 Mb
Release : 2013-10-10
Category : Technology & Engineering
ISBN : 9781461481218

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Bismuth-Containing Compounds by Handong Li,Zhiming M. Wang Pdf

Bismuth-containing compounds comprise a relatively unexplored materials system that is expected to offer many unique and desirable optoelectronic, thermoelectric, and electronic properties for innovative device applications. This book serves as a platform for knowledge sharing and dissemination of the latest advances in novel areas of bismuth-containing compounds for materials and devices, and provides a comprehensive introduction to those new to this growing field. Coverage of bismides includes theoretical considerations, epitaxial growth, characterization, and materials properties (optical, electrical, and structural). In addition to the well-studied area of highly mismatched Bi-alloys, the book covers emerging topics such as topological insulators and ferroelectric materials. Built upon fundamental science, the book is intended to stimulate interest in developing new classes of semiconductor and thermoelectric materials that exploit the properties of Bismuth. Application areas for bismide materials include laser diodes for optical communications, DVD systems, light-emitting diodes, solar cells, transistors, quantum well lasers, and spintronic devices.

Author : Anonim
Publisher : Unknown
Page : 442 pages
File Size : 41,6 Mb
Release : 2006
Category : Optoelectronic devices
ISBN : UOM:39015064349536

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Optoelectronic Materials and Devices by Anonim Pdf

Author : Emad Alkhazraji
Publisher : Noor Publishing
Page : 116 pages
File Size : 42,7 Mb
Release : 2017-02-10
Category : Technology & Engineering
ISBN : 9783330850699

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Ultra-Broadband InAs/InP Quantum-Dash Laser in Optical Communications: Device and System Level Investigation by Emad Alkhazraji Pdf

Quantum dash based laser diodes have attracted the focus of study and research in the very recent years due to what they possess of myriad advantages that make them ideal for several applications. Atop said advantages is their peculiar ultra-broadband emission as a result of the inherent inhomogeneous nature of the growth process of quantum dashes. This book investigates a novel multi-stacked chirped InAs/InP quantum dash-in-well laser that introduces an extra layer of inhomogeneity. The investigation of this laser is carried out at two levels: device level and system level. In device level, the fundamental laser diode characterization experiments are performed to extract its principle parameters. Thereafter, the investigation scope is shifted towards pulsed operation modes of higher-ordered duty-cycles and continuous wave operations. The device-level characterization is concluded by investigating the temperature dependent lasing spectral profiles at different geometrical configurations, current injections, and temperatures. Finally, the obtained results are used to optimize different operation parameters that achieved a successful implementation in optical communication systems.

Author : Institute of Physics Conference
Publisher : CRC Press
Page : 1352 pages
File Size : 46,8 Mb
Release : 2020-10-28
Category : Science
ISBN : 9781000157109

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Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995 by Institute of Physics Conference Pdf

Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.