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Ion Mixing And Solid Phase Regrowth In Compositional Disordering Of Semiconductor Superlattices Book in PDF, ePub and Kindle version is available to download in english. Read online anytime anywhere directly from your device. Click on the download button below to get a free pdf file of Ion Mixing And Solid Phase Regrowth In Compositional Disordering Of Semiconductor Superlattices book. This book definitely worth reading, it is an incredibly well-written.
Author : Wei Xia
Publisher : Unknown
Page : 306 pages
File Size : 47,8 Mb
Release : 1992
Category : Electronic
ISBN : UCSD:31822007728892
Author : Anonim
Publisher : Unknown
Page : 892 pages
File Size : 41,9 Mb
Release : 1994
Category : Aeronautics
ISBN : UIUC:30112005547648
Author : Anonim
Publisher : Unknown
Page : 826 pages
File Size : 44,8 Mb
Release : 1991
Category : Physics
ISBN : UOM:39015027732158
Author : Anonim
Publisher : Unknown
Page : 646 pages
File Size : 52,6 Mb
Release : 1993
Category : Science
ISBN : MINN:31951P00241232F
Author : World Bank
Publisher : World Bank Publications
Page : 1422 pages
File Size : 52,9 Mb
Release : 1993
Category : China
ISBN : 0821323954
The Republic of Korea's industrial policy has directed that nation's economy through nearly three decades of spectacular growth. But the authors of this paper maintain that this policy is showing signs of being outmoded. The time has come, the authors argue, for the Korean government to stop managing the economy's structural development and to redefine the responsibilities of business and government. Under this proposed compact, the allocation of resources would shift from the government to the private industrial and financial sectors. The transformation of the government bureaucracy from an ad hoc policy role to one of a transparent and predictable regulator is a key to the success of this undertaking. These new directions would present the government with enormous challenges. Greater competitive discipline and regulatory oversight would be required. While dealing with the complexities of the transition, the government would have to maintain macroeconomic stability and the momentum of savings and investment. For comparison, the study examines the industrial economies of France, Germany, Japan, and the United States, which underwent similar shifts.
Author : Anonim
Publisher : Unknown
Page : 780 pages
File Size : 45,8 Mb
Release : 2004
Category : Coatings
ISBN : UOM:39015062848372
Author : Anonim
Publisher : Unknown
Page : 2152 pages
File Size : 51,8 Mb
Release : 1989
Category : Engineering
ISBN : MINN:31951D00234299M
Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.
Author : Anonim
Publisher : Unknown
Page : 780 pages
File Size : 49,8 Mb
Release : 1989
Category : Power resources
ISBN : UOM:39015018272008
Author : Leonard J. Brillson
Publisher : John Wiley & Sons
Page : 589 pages
File Size : 44,8 Mb
Release : 2012-06-26
Category : Technology & Engineering
ISBN : 9783527665723
An advanced level textbook covering geometric, chemical, and electronic structure of electronic materials, and their applications to devices based on semiconductor surfaces, metal-semiconductor interfaces, and semiconductor heterojunctions. Starting with the fundamentals of electrical measurements on semiconductor interfaces, it then describes the importance of controlling macroscopic electrical properties by atomic-scale techniques. Subsequent chapters present the wide range of surface and interface techniques available to characterize electronic, optical, chemical, and structural properties of electronic materials, including semiconductors, insulators, nanostructures, and organics. The essential physics and chemistry underlying each technique is described in sufficient depth with references to the most authoritative sources for more exhaustive discussions, while numerous examples are provided throughout to illustrate the applications of each technique. With its general reading lists, extensive citations to the text, and problem sets appended to all chapters, this is ideal for students of electrical engineering, physics and materials science. It equally serves as a reference for physicists, material science and electrical and electronic engineers involved in surface and interface science, semiconductor processing, and device modeling and design. This is a coproduction of Wiley and IEEE * Free solutions manual available for lecturers at www.wiley-vch.de/supplements/
Author : Anonim
Publisher : Unknown
Page : 758 pages
File Size : 42,7 Mb
Release : 1989
Category : Power resources
ISBN : UOM:39015018272040
Author : Pietro della Casa
Publisher : Cuvillier Verlag
Page : 250 pages
File Size : 51,7 Mb
Release : 2021-03-25
Category : Science
ISBN : 9783736963979
This work is about two-step epitaxial growth using metalorganic vapor-phase epitaxy (MOVPE) for the realization of edge-emitting near-infrared laser diodes. The fabricated gallium arsenide-based devices fall into two categories: high-power lasers (watt range, multimodal) and tunable lasers (milliwatt range, monomodal). Common to both cases is that surface contamination – particularly that due to oxygen – needs to be removed before regrowth. Thus, in-situ etching with carbon tetrabromide (CBr4) is first studied. The experimental results include kinetic data, the effects of different etching conditions as well as substrate characteristics, and the effectiveness in reducing surface contamination. These investigations pave the way to devices based on 2-step epitaxy combined with in-situ etching. Correspondingly, thermally-tuned SG-DBR lasers operating around 975 nm have been successfully realized, obtaining a tuning range of 21 nm. In addition, the possibility of using electronic tuning in similar devices has been explored. High-power broad-area lasers have also been realized, using two-step epitaxy combined with ex-situ and in-situ etching, to create a buried, shallow “mesa” containing the active zone. This approach allows introducing lateral electrical and optical confinement, and – simultaneously – non-absorbing mirrors at the laser facets. Additionally, a different strategy to create a buried current aperture is presented, which is based on ion implantation followed by epitaxial regrowth. This enables to improve device performance and simultaneously introduce non-absorbing mirrors at the facets with correspondingly increased reliability.
Author : Anonim
Publisher : Unknown
Page : 572 pages
File Size : 55,5 Mb
Release : 1988
Category : Engineering
ISBN : PSU:000067430284
Author : Alexander V. Latyshev,Anatoliy V. Dvurechenskii,Alexander L. Aseev
Publisher : Elsevier
Page : 552 pages
File Size : 43,8 Mb
Release : 2016-11-10
Category : Science
ISBN : 9780128105139
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures Covers recent developments in the field from all over the world Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries
Author : Anonim
Publisher : Unknown
Page : 496 pages
File Size : 54,6 Mb
Release : 1987
Category : Engineering
ISBN : STANFORD:36105010856396
Author : Anonim
Publisher : Unknown
Page : 948 pages
File Size : 48,7 Mb
Release : 1993
Category : Electrical engineering
ISBN : OSU:32435060206125