Mathematical Modelling And Simulation Of Electric Circuits And Semiconductor Devices

Author : Randolph Bank,R. Bulirsch,H. Gajewski,K. Merten
Publisher : Birkhäuser
Page : 314 pages
File Size : 45,7 Mb
Release : 2012-12-06
Category : Mathematics
ISBN : 9783034885287

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Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices by Randolph Bank,R. Bulirsch,H. Gajewski,K. Merten Pdf

Progress in today's high-technology industries is strongly associated with the development of new mathematical tools. A typical illustration of this partnership is the mathematical modelling and numerical simulation of electric circuits and semiconductor devices. At the second Oberwolfach conference devoted to this important and timely field, scientists from around the world, mainly applied mathematicians and electrical engineers from industry and universities, presented their new results. Their contributions, forming the body of this work, cover electric circuit simulation, device simulation and process simulation. Discussions on experiences with standard software packages and improvements of such packages are included. In the semiconductor area special lectures were given on new modelling approaches, numerical techniques and existence and uniqueness results. In this connection, mention is made, for example, of mixed finite element methods, an extension of the Baliga-Patankar technique for a three dimensional simulation, and the connection between semiconductor equations and the Boltzmann equations.

Author : R. Bank
Publisher : Birkhäuser
Page : 297 pages
File Size : 44,5 Mb
Release : 2014-10-05
Category : Science
ISBN : 3034856997

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Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices by R. Bank Pdf

Numerical simulation and modelling of electric circuits and semiconductor devices are of primal interest in today's high technology industries. At the Oberwolfach Conference more than forty scientists from around the world, in cluding applied mathematicians and electrical engineers from industry and universities, presented new results in this area of growing importance. The contributions to this conference are presented in these proceedings. They include contributions on special topics of current interest in circuit and device simulation, as well as contributions that present an overview of the field. In the semiconductor area special lectures were given on mixed finite element methods and iterative procedures for the solution of large linear systems. For three dimensional models new discretization procedures including software packages were presented. Con nections between semiconductor equations and the Boltzmann equation were shown as well as relations to the quantum transport equation. Other issues discussed in this area include the design of simulation programs for semiconductors, vectorcomputers, and interface problems in several dimensions. Topics discussed in the area of circuit simulation include the index classification of differential-algebraic systems, connections with ill-posed problems, and regularization techniques. Split discretization procedures were given for the efficient calculation of periodic solutions of circuits taking into acount the latency. Homotopy methods and new numerical techniques for differential-algebraic systems were presented, and im provements of special numerical methods for standard software packages were sug gested. The editors VII Table of Contents Circuit Simulation Merten K.

Author : R. Bank
Publisher : Birkhäuser
Page : 0 pages
File Size : 40,7 Mb
Release : 1990-02-01
Category : Science
ISBN : 3764324392

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Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices by R. Bank Pdf

Numerical simulation and modelling of electric circuits and semiconductor devices are of primal interest in today's high technology industries. At the Oberwolfach Conference more than forty scientists from around the world, in cluding applied mathematicians and electrical engineers from industry and universities, presented new results in this area of growing importance. The contributions to this conference are presented in these proceedings. They include contributions on special topics of current interest in circuit and device simulation, as well as contributions that present an overview of the field. In the semiconductor area special lectures were given on mixed finite element methods and iterative procedures for the solution of large linear systems. For three dimensional models new discretization procedures including software packages were presented. Con nections between semiconductor equations and the Boltzmann equation were shown as well as relations to the quantum transport equation. Other issues discussed in this area include the design of simulation programs for semiconductors, vectorcomputers, and interface problems in several dimensions. Topics discussed in the area of circuit simulation include the index classification of differential-algebraic systems, connections with ill-posed problems, and regularization techniques. Split discretization procedures were given for the efficient calculation of periodic solutions of circuits taking into acount the latency. Homotopy methods and new numerical techniques for differential-algebraic systems were presented, and im provements of special numerical methods for standard software packages were sug gested. The editors VII Table of Contents Circuit Simulation Merten K.

Author : Randolph E. Bank,Roland Bulirsch,K. Merten
Publisher : Unknown
Page : 324 pages
File Size : 40,9 Mb
Release : 1990
Category : Computer simulation
ISBN : UOM:39015018999634

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Mathematical Modelling and Simulation of Electric Circuits and Semiconductor Devices by Randolph E. Bank,Roland Bulirsch,K. Merten Pdf

Author : R. Bank
Publisher : Birkhäuser
Page : 298 pages
File Size : 42,8 Mb
Release : 2013-11-22
Category : Science
ISBN : 9783034856980

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Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices by R. Bank Pdf

Numerical simulation and modelling of electric circuits and semiconductor devices are of primal interest in today's high technology industries. At the Oberwolfach Conference more than forty scientists from around the world, in cluding applied mathematicians and electrical engineers from industry and universities, presented new results in this area of growing importance. The contributions to this conference are presented in these proceedings. They include contributions on special topics of current interest in circuit and device simulation, as well as contributions that present an overview of the field. In the semiconductor area special lectures were given on mixed finite element methods and iterative procedures for the solution of large linear systems. For three dimensional models new discretization procedures including software packages were presented. Con nections between semiconductor equations and the Boltzmann equation were shown as well as relations to the quantum transport equation. Other issues discussed in this area include the design of simulation programs for semiconductors, vectorcomputers, and interface problems in several dimensions. Topics discussed in the area of circuit simulation include the index classification of differential-algebraic systems, connections with ill-posed problems, and regularization techniques. Split discretization procedures were given for the efficient calculation of periodic solutions of circuits taking into acount the latency. Homotopy methods and new numerical techniques for differential-algebraic systems were presented, and im provements of special numerical methods for standard software packages were sug gested. The editors VII Table of Contents Circuit Simulation Merten K.

Author : Christopher M. Snowden
Publisher : World Scientific
Page : 242 pages
File Size : 45,6 Mb
Release : 1998
Category : Science
ISBN : 981023693X

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Introduction to Semiconductor Device Modelling by Christopher M. Snowden Pdf

This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.

Author : Tor A. Fjeldly,Trond Ytterdal,Michael S. Shur
Publisher : Wiley-Interscience
Page : 440 pages
File Size : 50,6 Mb
Release : 1998
Category : Computers
ISBN : UOM:39015040160692

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Introduction to Device Modeling and Circuit Simulation by Tor A. Fjeldly,Trond Ytterdal,Michael S. Shur Pdf

This book is a useful reference for practicing electrical engineers as well as a textbook for a junior/senior or graduate level course in electrical engineering. The authors combine two subjects: device modeling and circuit simulation - by providing a large number of well-prepared examples of circuit simulations immediately following the description of many device models.

Author : Roy Leventhal,Lynne Green
Publisher : Springer Science & Business Media
Page : 769 pages
File Size : 45,8 Mb
Release : 2007-01-10
Category : Technology & Engineering
ISBN : 9780387241609

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Semiconductor Modeling: by Roy Leventhal,Lynne Green Pdf

Discusses process variation, model accuracy, design flow and many other practical engineering, reliability and manufacturing issues Gives a good overview for a person who is not an expert in modeling and simulation, enabling them to extract the necessary information to competently use modeling and simulation programs Written for engineering students and product design engineers

Author : Graham F. Carey
Publisher : Unknown
Page : 452 pages
File Size : 45,9 Mb
Release : 1996-06-19
Category : Computers
ISBN : UOM:39015037277954

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Circuit, Device and Process Simulation by Graham F. Carey Pdf

This book presents for the first time a unified treatment of the physical processes, mathematical models and numerical techniques for circuit, device and process simulation. At the macroscopic level linear and nonlinear circuit elements are introduced to yield a mathematical model of an integrated circuit. Numerical techniques used to solve this coupled system of ODEs are described. Microscopically, current flow within a transistor is modeled using the drift-diffusion and hydrodynamic PDE systems. Finite difference and finite element methods for spatial discretizations are treated, as are grid generation and refinement, upwinding, and multilevel schemes. At the fabrication level, physical processes such as diffusion, oxidation, and crystal growth are modeled using reaction-diffusion-convection equations. These models require multistep integration techniques and Krylov projection methods for successful implementation. Exercises, programming assignments, and an extensive bibliography are included to reinforce and extend the treatment.

Author : Dragica Vasileska,Stephen M. Goodnick
Publisher : Morgan & Claypool Publishers
Page : 216 pages
File Size : 54,8 Mb
Release : 2006-12-01
Category : Technology & Engineering
ISBN : 9781598290578

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Computational Electronics by Dragica Vasileska,Stephen M. Goodnick Pdf

Computational Electronics is devoted to state of the art numerical techniques and physical models used in the simulation of semiconductor devices from a semi-classical perspective. Computational electronics, as a part of the general Technology Computer Aided Design (TCAD) field, has become increasingly important as the cost of semiconductor manufacturing has grown exponentially, with a concurrent need to reduce the time from design to manufacture. The motivation for this volume is the need within the modeling and simulation community for a comprehensive text which spans basic drift-diffusion modeling, through energy balance and hydrodynamic models, and finally particle based simulation. One unique feature of this book is a specific focus on numerical examples, particularly the use of commercially available software in the TCAD community. The concept for this book originated from a first year graduate course on computational electronics, taught now for several years, in the Electrical Engineering Department at Arizona State University. Numerous exercises and projects were derived from this course and have been included. The prerequisite knowledge is a fundamental understanding of basic semiconductor physics, the physical models for various device technologies such as pndiodes, bipolar junction transistors, and field effect transistors.

Author : K. Antreich,R. Bulirsch,A. Gilg,P. Rentrop
Publisher : Birkhäuser
Page : 356 pages
File Size : 50,5 Mb
Release : 2012-12-06
Category : Mathematics
ISBN : 9783034880657

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Modeling, Simulation, and Optimization of Integrated Circuits by K. Antreich,R. Bulirsch,A. Gilg,P. Rentrop Pdf

The third Conference on Mathematical Models and Numerical Simulation in Electronic Industry brought together researchers in mathematics, electrical engineering and scientists working in industry. The contributions to this volume try to bridge the gap between basic and applied mathematics, research in electrical engineering and the needs of industry.

Author : Narain D. Arora
Publisher : Springer Science & Business Media
Page : 628 pages
File Size : 46,9 Mb
Release : 2012-12-06
Category : Computers
ISBN : 9783709192474

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MOSFET Models for VLSI Circuit Simulation by Narain D. Arora Pdf

Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.

Author : Narain Arora
Publisher : World Scientific
Page : 632 pages
File Size : 52,7 Mb
Release : 2007-02-14
Category : Electronic
ISBN : 9789814365499

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Mosfet Modeling for VLSI Simulation by Narain Arora Pdf

' A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today''s (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs. Contents: OverviewReview of Basic Semiconductor and pn Junction TheoryMOS Transistor Structure and OperationMOS CapacitorThreshold VoltageMOSFET DC ModelDynamic ModelModeling Hot-Carrier EffectsData Acquisition and Model Parameter MeasurementsModel Parameter Extraction Using Optimization MethodSPICE Diode and MOSFET Models and Their ParametersStatistical Modeling and Worst-Case Design Parameters Readership: Integrated circuit chip designers, device model developers and circuit simulators. '

Author : S. Selberherr
Publisher : Springer Science & Business Media
Page : 308 pages
File Size : 50,8 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9783709187524

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Analysis and Simulation of Semiconductor Devices by S. Selberherr Pdf

The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.

Author : Christopher M. Snowden
Publisher : Springer Science & Business Media
Page : 267 pages
File Size : 48,5 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9781447110330

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Semiconductor Device Modelling by Christopher M. Snowden Pdf

Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.