Metal Semiconductor Schottky Barrier Junctions And Their Applications
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Metal-Semiconductor Schottky Barrier Junctions and Their Applications by B.L. Sharma Pdf
The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the larger interest, it was also considered necessary to have the different topics of Schottky barrier junctions written by experts.
Heterojunctions and Metal Semiconductor Junctions by A.G. Milnes Pdf
Heterojunctions and Metal-Semiconductor Junctions discusses semiconductor-semiconductor heterojunctions and metal-semiconductor heterojunctions, which are of significant practical importance today and also of considerable scientific interest, with worthwhile problems still to be explored and understood. Many classes of heterojunctions are believed to have new and valuable applications. Although some aspects of heterojunction behavior remain areas for continued scientific and technological study, the main outlines of the subject are clear. This book comprises nine chapters, and begins with an introduction to semiconductor heterojunctions. Succeeding chapters then discuss semiconductor p-n heterojunction models and diode behavior; heterojunction transistors; isotype (n-n, p-p) heterojunctions; optical properties of heterojunctions and heterojunction lasers; metal-semiconductor barriers; metal-semiconductor junction behavior; high yield photoemissive cathodes; and fabrication of heterojunctions. This book will be of interest to practitioners in the fields of applied physics.
Metal – Semiconductor Contacts and Devices by Simon S. Cohen,Gennady Sh. Gildenblat Pdf
VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices. This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularly, ohmic contacts. Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well. Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful.
Schottky Barriers: an Overview by Saul T. Redd Pdf
A Schottky barrier is an electrostatic interface between a metal and a semiconductor that plays a vital role in many electronic devices. Schottky Barriers: An Overview opens with a brief review of the metal-semiconductor Schottky junction, the basic charge transport theory and the issues associated with these barriers.Additionally, the authors provide an overview of recent developments in the field of Schottky contacts to ZnO and related materials, such as ZnMgO, BeZnO, and BeMgZnO.Despite the fundamental importance of Schottky barrier height, the mechanisms which control the barrier formation are still far from understood. As such, for a better understanding of Schottky barriers and barrier height, the authors discuss various empirical models.In closing, AlGaN/GaN Schottky barrier diodes with and without in-situ silicon carbon nitride cap layers are investigated, with the fabricated SBD with a SiCN cap layer exhibiting improved electrical characteristics.
Semiconductor Gas Sensors by Raivo Jaaniso,Ooi Kiang Tan Pdf
Semiconductor Gas Sensors, Second Edition, summarizes recent research on basic principles, new materials and emerging technologies in this essential field. Chapters cover the foundation of the underlying principles and sensing mechanisms of gas sensors, include expanded content on gas sensing characteristics, such as response, sensitivity and cross-sensitivity, present an overview of the nanomaterials utilized for gas sensing, and review the latest applications for semiconductor gas sensors, including environmental monitoring, indoor monitoring, medical applications, CMOS integration and chemical warfare agents. This second edition has been completely updated, thus ensuring it reflects current literature and the latest materials systems and applications. Includes an overview of key applications, with new chapters on indoor monitoring and medical applications Reviews developments in gas sensors and sensing methods, including an expanded section on gas sensor theory Discusses the use of nanomaterials in gas sensing, with new chapters on single-layer graphene sensors, graphene oxide sensors, printed sensors, and much more
Semiconductor Physics by Karl W. Böer,Udo W. Pohl Pdf
This handbook gives a complete and detailed survey of the field of semiconductor physics. It addresses every fundamental principle, the most important research topics and results, as well as conventional and emerging new areas of application. Additionally it provides all essential reference material on crystalline bulk, low-dimensional, and amorphous semiconductors, including valuable data on their optical, transport, and dynamic properties. This updated and extended second edition includes essential coverage of rapidly advancing areas in semiconductor physics, such as topological insulators, quantum optics, magnetic nanostructures and spintronic systems. Richly illustrated and authored by a duo of internationally acclaimed experts in solar energy and semiconductor physics, this handbook delivers in-depth treatment of the field, reflecting a combined experience spanning several decades as both researchers and educators. Offering a unique perspective on many issues, Semiconductor Physics is an invaluable reference for physicists, materials scientists and engineers throughout academia and industry.
Infrared and Terahertz Detectors, Third Edition by Antoni Rogalski Pdf
This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of infrared and terahertz detector technology, from fundamental science to materials and fabrication techniques. It contains a complete overhaul of the contents including several new chapters and a new section on terahertz detectors and systems. It includes a new tutorial introduction to technical aspects that are fundamental for basic understanding. The other dedicated sections focus on thermal detectors, photon detectors, and focal plane arrays.
Semiconductor Physical Electronics by Sheng S. Li Pdf
The purpose of this book is to provide the reader with a self-contained treatment of fundamen tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the ·Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p--n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.
Photoconductivity and Photoconductive Materials, 2 Volume Set by Safa O. Kasap Pdf
Explore an authoritative resource with coverage of foundational concepts of photoconductivity and photoconductive materials In Photoconductivity and Photoconductive Materials, Professor Kasap delivers a definitive guide to the basic principles of photoconductivity and a selection of present topical photoconductive materials. Divided into two parts, the set begins with basic concepts and definitions and coverage of characterization using steady state, transient and modulated photoconductivity techniques, including the novel charge extraction by linearly increasing voltage (CELIV) method The physics of terahertz photoconductivity and fundamentals of organic semiconductors lsois are also covered. Part Two of the set starts with a comprehensive review of a wide range of photoconductive materials and then focuses on some of the most important photoconductors, including hydrogenated amorphous silicon, cadmium mercury telluride, various x-ray photoconductors, diamond films, metal halide perovskites, nanowires and quantum dots. Photoconductive antenna application is also included. Filled with contributions from leading authors in the field, this book also offers: A thorough introduction to the characterization of semiconductors from photoconductivity techniques, including uniform illumination and photocarrier grating techniques Comprehensive explorations of organic photoconductors, including photogeneration, transport, and applications in printing Practical discussions of time-of-flight transient photoconductivity, including experimental techniques and interpretation In-depth examinations of transient photoconductivity of organic semiconducting films and novel transient photoconductivity techniques Perfect for research physicists, materials scientists, and electrical engineers, Photoconductivity and Photoconductive Materials is also an indispensable resource for postgraduate and senior undergraduate students working in the area of optoelectronic materials, as well as researchers working in industry.
Advanced Material and Device Applications with Germanium by Sanghyun Lee Pdf
Germanium is an elemental semiconductor, which played an important role in the birth of the semiconductor but soon was replaced with silicon. However, germanium is poised to make a remarkable comeback in the semiconductor industry. With this increasing attention, this book describes the fundamental aspects of germanium and its applications. The contributing authors are experts in their field with great in-depth knowledge. The authors strongly feel that this contribution might be of interest to readers and help to expand the scope of their knowledge.
Silicon-Based Millimeter-Wave Devices by Johann-Friedrich Luy,Peter Russer Pdf
A description of field-theoretical methods for the design and analysis of planar waveguide structures and antennas. The principles and limitations of transit-time devices with different injection mechanisms are covered, as are aspects of fabrication and characterization. The physical properties of silicon Schottky contacts and diodes are treated in a separate chapter, while two whole chapters are devoted to silicon/germanium devices. The integration of devices in monolithic circuits is explained together with advanced technologies, such as the self-mixing oscillator operation, before concluding with sensor and system applications.
Narrow-gap Semiconductor Photodiodes by Antoni Rogalski,Krzysztof Adamiec,Jaroslaw Rutkowski Pdf
In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.
Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un
GaAs High-Speed Devices by C. Y. Chang,Francis Kai Pdf
The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
