Modern Semiconductor Devices For Integrated Circuits
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Modern Semiconductor Devices for Integrated Circuits by Chenming Hu Pdf
Modern Semiconductor Devices for Integrated Circuits, First Edition introduces readers to the world of modern semiconductor devices with an emphasis on integrated circuit applications. KEY TOPICS Electrons and Holes in Semiconductors; Motion and Recombination of Electrons and Holes; Device Fabrication Technology; PN and Metal Semiconductor Junctions; MOS Capacitor; MOS Transistor; MOSFETs in ICs Scaling, Leakage, and Other Topics; Bipolar Transistor. MARKET Written by an experienced teacher, researcher, and expert in industry practices, this succinct and forward-looking text is appropriate for anyone interested in semiconductor devices for integrated curcuits, and serves as a suitable reference text for practicing engineers. "
Theory of Modern Electronic Semiconductor Devices by Kevin F. Brennan,April S. Brown Pdf
A thorough examination of the present and future of semiconductor device technology Engineers continue to develop new electronic semiconductor devices that are almost exponentially smaller, faster, and more efficient than their immediate predecessors. Theory of Modern Electronic Semiconductor Devices endeavors to provide an up-to-date, extended discussion of the most important emerging devices and trends in semiconductor technology, setting the pace for the next generation of the discipline's literature. Kevin Brennan and April Brown focus on three increasingly important areas: telecommunications, quantum structures, and challenges and alternatives to CMOS technology. Specifically, the text examines the behavior of heterostructure devices for communications systems, quantum phenomena that appear in miniaturized structures and new nanoelectronic device types that exploit these effects, the challenges faced by continued miniaturization of CMOS devices, and futuristic alternatives. Device structures on the commercial and research levels analyzed in detail include: * Heterostructure field effect transistors * Bipolar and CMOS transistors * Resonant tunneling diodes * Real space transfer transistors * Quantum dot cellular automata * Single electron transistors The book contains many homework exercises at the end of each chapter, and a solution manual can be obtained for instructors. Emphasizing the development of new technology, Theory of Modern Electronic Semiconductor Devices is an ideal companion to electrical and computer engineering graduate level courses and an essential reference for semiconductor device engineers.
Compact Models for Integrated Circuit Design by Samar K. Saha Pdf
Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.
High-Frequency Integrated Circuits by Sorin Voinigescu Pdf
A transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to 200 GHz, this comprehensive text covers high-speed, RF, mm-wave, and optical fibre circuits using nanoscale CMOS, SiGe BiCMOS, and III-V technologies. Step-by-step design methodologies, end-of chapter problems, and practical simulation and design projects are provided, making this an ideal resource for senior undergraduate and graduate courses in circuit design. With an emphasis on device-circuit topology interaction and optimization, it gives circuit designers and students alike an in-depth understanding of device structures and process limitations affecting circuit performance.
Noise in Semiconductor Devices by Fabrizio Bonani,Giovanni Ghione Pdf
Provides an overview of the physical basis of noise in semiconductor devices, and a detailed treatment of numerical noise simulation in small-signal conditions. It presents innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions.
This book is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.
III-V Integrated Circuit Fabrication Technology by Shiban Tiku,Dhrubes Biswas Pdf
GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III–V processing, with emphasis on HBTs. It is aimed at practicing engineers and graduate students and engineers new to the field of III–V semiconductor IC processing. The book’s primary purpose is to discuss all aspects of processing of active and passive devices, from crystal growth to backside processing, including lithography, etching, and film deposition.
Across 15 chapters, Semiconductor Devices covers the theory and application of discrete semiconductor devices including various types of diodes, bipolar junction transistors, JFETs, MOSFETs and IGBTs. Applications include rectifying, clipping, clamping, switching, small signal amplifiers and followers, and class A, B and D power amplifiers. Focusing on practical aspects of analysis and design, interpretations of device data sheets are integrated throughout the chapters. Computer simulations of circuit responses are included as well. Each chapter features a set of learning objectives, numerous sample problems, and a variety of exercises designed to hone and test circuit design and analysis skills. A companion laboratory manual is available. This is the print version of the on-line OER.
Semiconductor Devices & Circuits by Atul P. Godse Pdf
Semiconductor Physics and MaterialsIntrinsic and extrinsic semiconductors, Conduction mechanism in extrinsic semiconductors, Carrier concentrations, Drift and diffusion mechanisms, Drift and diffusion current densities, Excess carriers, Recombination process, Mean carrier lifetime, Conductivity, Mobility, Mass action law, Einstein relationship.Semiconductor materials used in optoelectronic devices and modern semiconductor devices and integrated circuits - GaAs, SiGe, GaAsP.Semiconductor Diodes A brief overview of following types of diodes, their peculiarities and applications Rectifier, Signal, Switching, Power, Tunnel, Shockley, Gunn, PIN.Semiconductor P-N Junction Diode : Open circuited step graded junction, Metallurgical junctions and ohmic contacts, Depletion region, Barrier potential, Forward and reverse biased diode operation.V-I characteristic equation of diode (no derivation). Volt equivalent of temperature, Temperature dependence of V-I characteristics, DC load line. Forward and reverse dynamic resistance, Small signal and large signal diode models. Diode data sheet specifications - PIV, IFMSurge, Iav.Switching Diodes - Diode switching times, Junction capacitances.(No derivations).Field Effect Transistors An overview of different types of FETs viz. JFET, MOSFET, MESFET, Peculiarities of these types and their application areas.JFET : JFET construction, Symbol, Basic operation, V-I characteristics, Transfer characteristics ( Shockley's equation), Cut-off & Pinch-off voltages, Transconductance, Input resistance & Capacitance. Drain to source resistance. Universal JFET bias curve. Biasing arrangements for JFET - Biasing against device variation, Biasing for zero current drift. JFET as voltage controlled current source. JFET data sheet specifications - IDSS, VP, gm, rd, RDS or RD (ON).JFET Amplifiers : CS, CD, CG amplifiers. Their analysis using small signal JFET model.MOSFETsAn overview of following MOSFET types - D-MOSFET, E-MOSFET, Power MOSFET, n-MOS, p-MOS and CMOS devices. Handling precautions for CMOS devices. D and E-MOSFET characteristics and parameters, Non ideal voltage current characteristics viz. Finite output resistance, body effect, sub threshold conduction, Breakdown effects and temperature effects. MOSFET biasing, Introduction to MOSFET as VLSI device.Bipolar Junction transistor An overview of different types of BJTs - Small signal and large signal low frequency types, Switching/RF, Heterojunction types. Peculiarities of these types and their application areas.BJT Biasing and Basic Amplifier Configurations : Need for biasing BJT, DC analysis of BJT circuits, Typical junction voltages for cut-off, Active and saturation regions, Voltage divider bias and its analysis for stability factors, Small signal-low frequency h-parameter model, Variation of h-parameters with operating point, Other small signal models, Derivations for CE configuration for Ai, Ri, Ro, Avs, Avs interms of h-parameters, Comparison of performance parameters with CB and CC configurations in tabular form. Need for multistage amplifiers and suitability of CE, CC and CB configurations in multistage amplifiers, Small signal and DC data sheet specifications for BJT.Concept of frequency response, Human ear response to audio frequencies, Significance of Octaves and Dacades. The decibel unit. Square wave testing of amplifiers. Miller's theorem. Effect of coupling, bypass, junction and stray capacitances on frequency response for BJT and FET amplifiers. Concept of dominant pole. N stage cascade amplifier, Band pass of cascaded stages (effect on frequency response). Concept of GBW. (No derivations).
Integrated Circuit Failure Analysis by Friedrich Beck Pdf
Funktionstests an integrierten Schaltungen sind für deren Zuverlässigkeit von herausragender Bedeutung. Erstmals werden in diesem Werk die speziellen Präparationstechniken für die Fehleranalyse beschrieben. Ausgehend von den theoretischen Grundlagen erläutert der Autor in praxisnahem Stil die verschiedenen Techniken, die das Zurückverfolgen von Ausfällen ermöglichen.
Principles of Semiconductor Devices by Sima Dimitrijev Pdf
"This dynamic text applies physics concepts and equations to practical, real-world applications of semiconductor device theory"-- Provided by publisher.
Physical Limitations of Semiconductor Devices by Vladislav A. Vashchenko,V. F. Sinkevitch Pdf
Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the reliability of the semiconductor devices.
