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Author : Jean-Pierre Colinge,James C. Greer,Jim Greer
Publisher : Cambridge University Press
Page : 269 pages
File Size : 51,5 Mb
Release : 2016-04-21
Category : Science
ISBN : 9781107052406
A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.
Author : Ahmet Bindal,Sotoudeh Hamedi-Hagh
Publisher : Springer
Page : 165 pages
File Size : 44,5 Mb
Release : 2016-02-23
Category : Technology & Engineering
ISBN : 9783319271774
This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI.
Author : Farzan Jazaeri,Jean-Michel Sallese
Publisher : Cambridge University Press
Page : 255 pages
File Size : 53,9 Mb
Release : 2018-03
Category : Science
ISBN : 9781107162044
A detailed introduction to the design, modeling, and operation of junctionless field effect transistors (FETs), including advantages and limitations.
Author : Dae Mann Kim,Yoon-Ha Jeong
Publisher : Springer Science & Business Media
Page : 292 pages
File Size : 40,9 Mb
Release : 2013-10-23
Category : Technology & Engineering
ISBN : 9781461481249
“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Author : Mengqi Fu
Publisher : Springer
Page : 102 pages
File Size : 44,8 Mb
Release : 2018-11-29
Category : Science
ISBN : 9789811334443
This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
Author : Guozhen Shen,Yu-Lun Chueh
Publisher : Springer
Page : 393 pages
File Size : 49,6 Mb
Release : 2018-11-23
Category : Technology & Engineering
ISBN : 9789811323676
This book gives a comprehensive overview of recent advances in developing nanowires for building various kinds of electronic devices. Specifically the applications of nanowires in detectors, sensors, circuits, energy storage and conversion, etc., are reviewed in detail by the experts in this field. Growth methods of different kinds of nanowires are also covered when discussing the electronic applications. Through discussing these cutting edge researches, the future directions of nanowire electronics are identified.
Author : Shubham Sahay,Mamidala Jagadesh Kumar
Publisher : John Wiley & Sons
Page : 619 pages
File Size : 46,9 Mb
Release : 2019-01-28
Category : Technology & Engineering
ISBN : 9781119523529
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Author : Sneh Saurabh,Mamidala Jagadesh Kumar
Publisher : CRC Press
Page : 306 pages
File Size : 46,8 Mb
Release : 2016-10-26
Category : Science
ISBN : 9781498767163
During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Author : Fumitaro Ishikawa,Irina Buyanova
Publisher : CRC Press
Page : 501 pages
File Size : 42,5 Mb
Release : 2017-10-17
Category : Science
ISBN : 9781315340722
One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.
Author : Momčilo Pejović,Milić M. Pejovic
Publisher : BoD – Books on Demand
Page : 194 pages
File Size : 45,5 Mb
Release : 2017-06-07
Category : Technology & Engineering
ISBN : 9789535131755
In 1959, Atalla and Kahng at Bell Labs produced the first successful field-effect transistor (FET), which had been long anticipated by other researchers by overcoming the "surface states" that blocked electric fields from penetrating into the semiconductor material. Very quickly, they became the fundamental basis of digital electronic circuits. Up to this point, there are more than 20 different types of field-effect transistors that are incorporated in various applications found in everyday's life. Based on this fact, this book was designed to overview some of the concepts regarding FETs that are currently used as well as some concepts that are still being developed.
Author : Hideaki Tsuchiya,Yoshinari Kamakura
Publisher : John Wiley & Sons
Page : 248 pages
File Size : 55,5 Mb
Release : 2017-06-13
Category : Technology & Engineering
ISBN : 9781118871720
A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
Author : Khan Maaz
Publisher : BoD – Books on Demand
Page : 266 pages
File Size : 55,8 Mb
Release : 2017-07-05
Category : Science
ISBN : 9789535132837
One-dimensional nanostructures, such as nanowires, have drawn extensive research interests in the recent years. The smaller size brings unique properties to the nanowires due to the finite size effect (quantum confinement effects). The unique geometrical features of the nanowires bring their utilization in many practical applications in the recent advanced technology. This book provides an updated review on fabrication, properties, and applications of various nanowires. This book is aimed to provide solid foundation of nanowires to the students, scientists, and engineers working in the field of material science and condensed matter physics.
Author : Yu Huang,King-Ning Tu
Publisher : CRC Press
Page : 486 pages
File Size : 44,7 Mb
Release : 2013-10-24
Category : Technology & Engineering
ISBN : 9789814303460
Nanoscale materials are showing great promise in various electronic, optoelectronic, and energy applications. Silicon (Si) has especially captured great attention as the leading material for microelectronic and nanoscale device applications. Recently, various silicides have garnered special attention for their pivotal role in Si device engineering and for the vast potential they possess in fields such as thermoelectricity and magnetism. The fundamental understanding of Si and silicide material processes at nanoscale plays a key role in achieving device structures and performance that meet real-world requirements and, therefore, demands investigation and exploration of nanoscale device applications. This book comprises the theoretical and experimental analysis of various properties of silicon nanocrystals, research methods and techniques to prepare them, and some of their promising applications.
Author : Jeffery L. Coffer
Publisher : Woodhead Publishing
Page : 442 pages
File Size : 40,6 Mb
Release : 2021-09-14
Category : Technology & Engineering
ISBN : 9780323851312
In its second, extensively revised second edition, Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and biomedical applications of this key material. The book begins by reviewing the basics of growth, characterization, biocompatibility, and surface modification of semiconducting silicon nanowires. Attention then turns to use of these structures for tissue engineering and delivery applications, followed by detection and sensing. Reflecting the evolution of this multidisciplinary subject, several new key topics are highlighted, including our understanding of the cell-nanowire interface, latest advances in associated morphologies (including silicon nanoneedles and nanotubes for therapeutic delivery), and significantly, the status of silicon nanowire commercialization in biotechnology. Semiconducting Silicon Nanowires for Biomedical Applications is a comprehensive resource for biomaterials scientists who are focused on biosensors, drug delivery, and the next generation of nano-biotech platforms that require a detailed understanding of the cell-nanowire interface, along with researchers and developers in industry and academia who are concerned with nanoscale biomaterials, in particular electronically-responsive structures. Reviews the growth, characterization, biocompatibility, and surface modification of semiconducting silicon nanowires Describes silicon nanowires for tissue engineering and delivery applications, including cellular binding & internalization, tissue engineering scaffolds, mediated differentiation of stem cells, and silicon nanoneedles & nanotubes for delivery of small molecule / biologic-based therapeutics Highlights the use of silicon nanowires for detection and sensing Presents a detailed description of our current understanding of the cell-nanowire interface Covers the current status of commercial development of silicon nanowire-based platforms
Author : Wei Lu,Jie Xiang
Publisher : Royal Society of Chemistry
Page : 400 pages
File Size : 52,7 Mb
Release : 2014-12-02
Category : Science
ISBN : 9781782625209
Semiconductor nanowires were initially discovered in late 90's and since then there has been an explosion in the research of their synthesis and understanding of their structures, growth mechanisms and properties. The realisation of their unique electrical, optical and mechanical properties has led to a great interest for their use in electronics, energy generation and storage. This book provides a timely reference on semiconductor nanowires including an introduction to their synthesis and properties and specific chapters focusing on the different applications including photovoltaics, nanogenerators, transistors, biosensors and photonics. This is the first book dedicated to Semiconductor Nanowires and provides an invaluable resource for researchers already working in the area as well as those new to the field. Edited by leading experts in the field and with contributions from well-known scientists, the book will appeal to both those working on fundamental nanomaterial research and those commercially interested in their applications.
