Physics Of High Speed Transistors

Physics Of High Speed Transistors Book in PDF, ePub and Kindle version is available to download in english. Read online anytime anywhere directly from your device. Click on the download button below to get a free pdf file of Physics Of High Speed Transistors book. This book definitely worth reading, it is an incredibly well-written.

Physics of High-Speed Transistors

Author : Juras Pozela
Publisher : Springer Science & Business Media
Page : 351 pages
File Size : 55,7 Mb
Release : 2013-06-29
Category : Science
ISBN : 9781489912428

Get Book

Physics of High-Speed Transistors by Juras Pozela Pdf

This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.

High Speed Semiconductor Physics. Theoretical Approaches and Device Physics

Author : Cliff Orori Mosiori
Publisher : Anchor Academic Publishing (aap_verlag)
Page : 390 pages
File Size : 48,8 Mb
Release : 2015-05-26
Category : Science
ISBN : 9783954899326

Get Book

High Speed Semiconductor Physics. Theoretical Approaches and Device Physics by Cliff Orori Mosiori Pdf

Solid state physics is a fascinating sub-genre of condensed matter physics - though some graduate students consider it a very boring and tedious subject area in Physics and others even call it a “squalid state”. Topics covered in this book are built on standard solid state physics references available in most online libraries or in other books on solid state physics. The complexity of high speed semiconductor physics and related devices arose from condensed solid state matter. The content covered in this book gives a deep coverage on some topics or sections that may be covered only superficially in other literature. Therefore, these topics are likely to differ a great deal from what is deemed important elsewhere in other books or available literature. There are many extremely good books on solid-state physics and condensed matter physics but very few of these books are restricted to high speed semiconductor physic though. Chapter one covers the general semiconductor qualities that make high speed semiconductor devices effect and includes the theory of crystals, diffusion and ist mechanisms, while chapter two covers solid state materials, material processing for high speed semiconductor devices and an introduction to quantum theory for materials in relation to density of states of the radiation for a black body and ist radiation properties. Chapter three discuss high speed semiconductor energy band theory, energy bands in general solid semiconductor materials, the Debye model, the Einstein model the Debye model and semiconductor transport carriers in 3D semiconductors while chapter four discuss effect of external force on current flow based on the concept of holes valence band, and lattice scattering in high speed devices. Chapter five briefly describes solid state thermoelectric fundamentals, thermoelectric material and thermoelectric theory of solids in lattice and phonons while chapter six scattering in high field effect in semiconductors in inter-valley electron scattering and the associated Fermi Dirac statistics and Maxwell-Boltzmann approximation on their carrier concentration variation with energy in extrinsic doping chapter seven covers p-n junction diodes, varactor diode, pin diode Schottky diode and their transient response of diode in multi-valley semiconductors. Chapter eight discusses high speed metal semiconductor field effect transistors.

High Speed Semiconductor Devices

Author : H. Beneking
Publisher : Springer Science & Business Media
Page : 276 pages
File Size : 53,9 Mb
Release : 1994-09-30
Category : Technology & Engineering
ISBN : 0412562200

Get Book

High Speed Semiconductor Devices by H. Beneking Pdf

High Speed Semiconductor Devices is the first textbook to focus on this topic. It gives a comprehensive introduction suitable for advanced students of electrical engineering and physics. It is practically oriented considering both physical limits and technical feasibility. It is illustrated with extensive exercises, full solutions and worked examples that give practical insight to and extend the treatment of the text.

Field Effect Transistors, A Comprehensive Overview

Author : Pouya Valizadeh
Publisher : John Wiley & Sons
Page : 480 pages
File Size : 46,8 Mb
Release : 2016-02-01
Category : Technology & Engineering
ISBN : 9781119155782

Get Book

Field Effect Transistors, A Comprehensive Overview by Pouya Valizadeh Pdf

This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales. Links the discussion of contemporary transistor devices to physical processes Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author Contains examples and end-of-chapter problems Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs. Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.

Pulse and Synchro-Photon Electronics

Author : Ferdinandas Vaitiekūnas
Publisher : Cambridge Scholars Publishing
Page : 388 pages
File Size : 48,9 Mb
Release : 2023-03-28
Category : Technology & Engineering
ISBN : 9781527592582

Get Book

Pulse and Synchro-Photon Electronics by Ferdinandas Vaitiekūnas Pdf

This book presents the theory of large-signal nonlinear impulse processes occurring in bipolar and field-effect transistors with a Schottky gate, collapse TRAPATT and tunnel diodes, superlattices, and double heterojunction lasers. It evaluates the maximum speed of impulse operation of these elements and experimentally constructs the generation of pulse oscillations with a repetition frequency of up to 1, 2 and 4 GHz. Original or adapted methods of mathematical modeling of processes provide an opportunity to obtain quantitative dependencies of generated pulse parameters, while the book also details the synchro-photon effect. In addition, as shown here, when a semiconductor element is switched on by an electric pulse, and at the same time a pulse of photons synchronously illuminates it, an effect occurs which increases the switching speed of the element by an order of magnitude. At the same time, the switching transient characteristic is shortened by 10 times or more. After applying this effect in pulse generators in the gigahertz frequency range, an increase in the repetition frequency of the generated oscillations is possible.

Junction Transistors

Author : John. J. Sparkes
Publisher : Elsevier
Page : 261 pages
File Size : 52,5 Mb
Release : 2016-05-13
Category : Technology & Engineering
ISBN : 9781483149073

Get Book

Junction Transistors by John. J. Sparkes Pdf

Junction Transistors explains the operation and characterization of junction transistors to a point from which detailed circuit analysis and design can be undertaken. This book highlights three features. First, this text analyzes the behavior of semiconductors, pn junctions, and all types of bipolar transistors from the standpoint of classical physics. The validity of this approach and the link with quantum physics is discussed in an appendix. Second, the high-speed operation of transistors is analyzed and explained in terms of base charge. Finally, the analysis of transistor behavior in terms of the movements of holes and electrons can only be carried out explicitly with the aid of simplifying assumptions, not all of which can be fully justified. In this selection, an attempt has been made to justify these assumptions wherever possible, to show where they break down, and to remove the assumptions altogether in one or two instances and obtain more rigorous solutions. This publication provides material of interest not only to undergraduates but also to those more familiar with the properties and use of transistors.

High-Speed Heterostructure Devices

Author : Patrick Roblin,Hans Rohdin
Publisher : Cambridge University Press
Page : 726 pages
File Size : 50,7 Mb
Release : 2002-03-07
Category : Technology & Engineering
ISBN : 9781139437462

Get Book

High-Speed Heterostructure Devices by Patrick Roblin,Hans Rohdin Pdf

Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.

High-speed Integrated Circuit Technology

Author : Mark J. W. Rodwell
Publisher : World Scientific
Page : 374 pages
File Size : 49,7 Mb
Release : 2001
Category : Technology & Engineering
ISBN : 9812810013

Get Book

High-speed Integrated Circuit Technology by Mark J. W. Rodwell Pdf

This book reviews the state of the art of very high speed digital integrated circuits. Commercial applications are in fiber optic transmission systems operating at 10, 40, and 100 Gb/s, while the military application is ADCs and DACs for microwave radar. The book contains detailed descriptions of the design, fabrication, and performance of wideband Si/SiGe-, GaAs-, and InP-based bipolar transistors. The analysis, design, and performance of high speed CMOS, silicon bipolar, and III-V digital ICs are presented in detail, with emphasis on application in optical fiber transmission and mixed signal ICs. The underlying physics and circuit design of rapid single flux quantum (RSFQ) superconducting logic circuits are reviewed, and there is extensive coverage of recent integrated circuit results in this technology. Contents: Preface (M J W Rodwell); High-Speed and High-Data-Bandwidth Transmitter and Receiver for Multi-Channel Serial Data Communication with CMOS Technology (M Fukaishi et al.); High-Performance Si and SiGe Bipolar Technologies and Circuits (M Wurzer et al.); Self-Aligned Si BJT/SiGe HBT Technology and Its Application to High-Speed Circuits (K Washio); Small-Scale InGaP/GaAs Heterojunction Bipolar Transistors for High-Speed and Low-Power Integrated-Circuit Applications (T Oka et al.); Prospects of InP-Based IC Technologies for 100-Gbit/S-Class Lightwave Communications Systems (T Enoki et al.); Scaling of InGaAs/InAlAs HBTs for High Speed Mixed-Signal and mm-Wave ICs (M J W Rodwell); Progress Toward 100 GHz Logic in InP HBT IC Technology (C H Fields et al.); Cantilevered Base InP DHBT for High Speed Digital Applications (A L Gutierrez-Aitken et al.); RSFQ Technology: Physics and Devices (P Bunyk et al.); RSFQ Technology: Circuits and Systems (D K Brock). Readership: Researchers, industrialists and academics in electrical and electronic engineering.

Semiconductor Materials

Author : B.G. Yacobi
Publisher : Springer Science & Business Media
Page : 233 pages
File Size : 55,9 Mb
Release : 2003-01-31
Category : Science
ISBN : 9780306473616

Get Book

Semiconductor Materials by B.G. Yacobi Pdf

The main objective of this book is to provide an introductory perspective of the basic principles of semiconductors, being an integrated overview of the basic properties, applications, and characterization of semiconductors in a single volume. This book is suitable for both undergraduate and graduate students, and for researchers, working in a wide variety of fields in physical and engineering sciences, who require an introductory and concise description of the field of semiconductors.

Issues in General Physics Research: 2011 Edition

Author : Anonim
Publisher : ScholarlyEditions
Page : 8864 pages
File Size : 53,5 Mb
Release : 2012-01-09
Category : Science
ISBN : 9781464963285

Get Book

Issues in General Physics Research: 2011 Edition by Anonim Pdf

Issues in General Physics Research / 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about General Physics Research. The editors have built Issues in General Physics Research: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about General Physics Research in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in General Physics Research: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Rapid Thermal Processing of Semiconductors

Author : Victor E. Borisenko,Peter J. Hesketh
Publisher : Springer Science & Business Media
Page : 374 pages
File Size : 51,6 Mb
Release : 2013-11-22
Category : Technology & Engineering
ISBN : 9781489918048

Get Book

Rapid Thermal Processing of Semiconductors by Victor E. Borisenko,Peter J. Hesketh Pdf

Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.

High Speed Heterostructure Devices

Author : Anonim
Publisher : Academic Press
Page : 481 pages
File Size : 46,7 Mb
Release : 1994-07-06
Category : Technology & Engineering
ISBN : 9780080864389

Get Book

High Speed Heterostructure Devices by Anonim Pdf

Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed Offers a complete, three-chapter review of resonant tunneling Provides an emphasis on circuits as well as devices

Handbook for III-V High Electron Mobility Transistor Technologies

Author : D. Nirmal,J. Ajayan
Publisher : CRC Press
Page : 430 pages
File Size : 48,6 Mb
Release : 2019-05-14
Category : Science
ISBN : 9780429862533

Get Book

Handbook for III-V High Electron Mobility Transistor Technologies by D. Nirmal,J. Ajayan Pdf

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Compact Modeling

Author : Gennady Gildenblat
Publisher : Springer Science & Business Media
Page : 531 pages
File Size : 53,6 Mb
Release : 2010-06-22
Category : Technology & Engineering
ISBN : 9789048186143

Get Book

Compact Modeling by Gennady Gildenblat Pdf

Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

HEMT Technology and Applications

Author : Trupti Ranjan Lenka,Hieu Pham Trung Nguyen
Publisher : Springer Nature
Page : 246 pages
File Size : 48,7 Mb
Release : 2022-06-23
Category : Technology & Engineering
ISBN : 9789811921650

Get Book

HEMT Technology and Applications by Trupti Ranjan Lenka,Hieu Pham Trung Nguyen Pdf

This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.