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Proceedings Of The Second International Symposium On Silicon Molecular Beam Epitaxy Book in PDF, ePub and Kindle version is available to download in english. Read online anytime anywhere directly from your device. Click on the download button below to get a free pdf file of Proceedings Of The Second International Symposium On Silicon Molecular Beam Epitaxy book. This book definitely worth reading, it is an incredibly well-written.
Author : John Condon Bean,Leo J. Schowalter
Publisher : Unknown
Page : 682 pages
File Size : 51,7 Mb
Release : 1988
Category : Epitaxy
ISBN : UOM:39015015510954
Author : John Condon Bean
Publisher : Unknown
Page : 478 pages
File Size : 45,5 Mb
Release : 1985
Category : Molecular beam epitaxy
ISBN : UCSD:31822003508223
Author : Erich Kasper,E. H. C. Parker
Publisher : Unknown
Page : 367 pages
File Size : 52,9 Mb
Release : 1989
Category : Crystal growth
ISBN : OCLC:437055586
Author : E. Kasper
Publisher : CRC Press
Page : 306 pages
File Size : 52,6 Mb
Release : 2018-05-04
Category : Technology & Engineering
ISBN : 9781351085076
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author : Y. Nissim,Emmanuel Rosencher
Publisher : Springer Science & Business Media
Page : 361 pages
File Size : 48,7 Mb
Release : 2012-12-06
Category : Science
ISBN : 9789400909137
In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10" e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100°C so that numerous metallurgical operations (oxydation, diffusion, annealing ... ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985.
Author : G. R. Srinivasan,J. Plummer,Sokrates T. Pantelides
Publisher : Unknown
Page : 826 pages
File Size : 43,8 Mb
Release : 1991
Category : Semiconductors
ISBN : UCAL:B3102912
Author : E M Anastassakis,John D Joannopoulos
Publisher : World Scientific
Page : 2768 pages
File Size : 50,5 Mb
Release : 1990-11-29
Category : Electronic
ISBN : 9789814583633
Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.
Author : A. J. Purdes
Publisher : Unknown
Page : 698 pages
File Size : 53,9 Mb
Release : 1991
Category : Diamond thin films
ISBN : UVA:X002329678
Author : Hans J. Möller,Horst P. Strunk,Jürgen H. Werner
Publisher : Springer Science & Business Media
Page : 399 pages
File Size : 49,6 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9783642934131
This book summarizes the most recent aspects of polycrystalline semiconductors as presented at the conference Polycrystalline Semiconductors - Grain Boundaries and Interfaces. It contains 12 review articles on selected topics written by experts in their fields and 41 complementary contributed papers. The structure, chemistry and physics of grain boundaries and other interfaces are experimentally and theoretically studied. Aspects of the technologically important polycrystalline silicon are discussed in detail. Also covered are other polycrystalline semiconductors, germanium and compound semiconductors, that are currently of interest in fundamental research and in the technology of solar cells and thin film devices. Anyone interested in polycrystalline semiconductors will be able to use this comprehensive collection to advantage. It also suggests directions for new research and development.
Author : Hari Singh Nalwa
Publisher : Elsevier
Page : 3451 pages
File Size : 55,6 Mb
Release : 2001-11-17
Category : Technology & Engineering
ISBN : 9780080533247
This five-volume handbook focuses on processing techniques, characterization methods, and physical properties of thin films (thin layers of insulating, conducting, or semiconductor material). The editor has composed five separate, thematic volumes on thin films of metals, semimetals, glasses, ceramics, alloys, organics, diamonds, graphites, porous materials, noncrystalline solids, supramolecules, polymers, copolymers, biopolymers, composites, blends, activated carbons, intermetallics, chalcogenides, dyes, pigments, nanostructured materials, biomaterials, inorganic/polymer composites, organoceramics, metallocenes, disordered systems, liquid crystals, quasicrystals, and layered structures. Thin films is a field of the utmost importance in today's materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, digital camcorders, sensitive broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are but a few examples of miniaturized device technologies that depend the utilization of thin film materials. The Handbook of Thin Films Materials is a comprehensive reference focusing on processing techniques, characterization methods, and physical properties of these thin film materials.
Author : Erich Kasper,E. H. C. Parker
Publisher : North Holland
Page : 484 pages
File Size : 45,9 Mb
Release : 1990
Category : Science
ISBN : UOM:39015025286371
This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy. A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping.
Author : F. Roozeboom,P. J. Timans,K. Kakushima,E. Gusev,Z. Karim,D. Misra,Y. S. Obeng,S. De Gendt,H. Jagannathan
Publisher : The Electrochemical Society
Page : 176 pages
File Size : 43,8 Mb
Release : 2019-05-17
Category : Science
ISBN : 9781607688686
This issue of ECS Transactions includes papers based on presentations from the symposium "Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9," originally held at the 235th ECS Meeting in Dallas, Texas, May 26-30, 2019.
Author : Anonim
Publisher : Unknown
Page : 2304 pages
File Size : 52,9 Mb
Release : 1997
Category : Electrical engineering
ISBN : OSU:32435059589309
Author : Kenneth E. Bean,George A. Rozgonyi
Publisher : Unknown
Page : 554 pages
File Size : 46,5 Mb
Release : 1984
Category : Integrated circuits
ISBN : UCAL:B4113081
Author : Marc Heyns,Marc Meuris,Paul Mertens
Publisher : Unknown
Page : 388 pages
File Size : 42,9 Mb
Release : 1994
Category : Contamination control
ISBN : UCAL:B4286346