Properties And Applications Of Transistors

Author : J. P. Vasseur
Publisher : Elsevier
Page : 462 pages
File Size : 41,9 Mb
Release : 2016-06-06
Category : Technology & Engineering
ISBN : 9781483138886

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Properties and Applications of Transistors by J. P. Vasseur Pdf

Properties and Applications of Transistors focuses on the evolution of transistors as one of the essential elements of modern electronics. The book first provides information on the physical principles of transistors, including conductivity of semiconductors, junction transistors, and transistor technology. The text also looks at the general discussion of linear two-ports. Topics include equivalent circuits for a two-port; relations between the two-ports corresponding to the possible methods of connection of transistors; and elements of matrix algebra. The selection also highlights the capabilities of transistors as linear-amplifiers. The stability and neutralization of transistors; measurement of power gain; transistors with complex base resistance; and point contact transistors at low frequencies are discussed. The text also looks at the maximum ratings of transistors, including maximum voltage and current, cooling by natural convection, and thermal runaway. The book is a vital reference for readers wanting to study transistors.

Author : Jean Pierre Vasseur
Publisher : Unknown
Page : 434 pages
File Size : 41,8 Mb
Release : 1968
Category : Electronic
ISBN : OCLC:877324322

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Properties and applications of transistors by Jean Pierre Vasseur Pdf

Author : University of Michigan. Department of Electrical Engineering
Publisher : Unknown
Page : 374 pages
File Size : 55,5 Mb
Release : 1955
Category : Transistors
ISBN : UOM:39015006057718

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Course Notes for EE 401, Fundamental Physical Properties of Transistors, and Pulse and Switching Applications by University of Michigan. Department of Electrical Engineering Pdf

Author : Bell Telephone Laboratories
Publisher : Unknown
Page : 808 pages
File Size : 49,7 Mb
Release : 1951
Category : Transistors
ISBN : IOWA:31858047303296

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The Transistor by Bell Telephone Laboratories Pdf

Author : Dharmendra Singh Yadav,Shiromani Balmukund Rahi,Sukeshni Tirkey
Publisher : CRC Press
Page : 370 pages
File Size : 53,6 Mb
Release : 2023-12-18
Category : Technology & Engineering
ISBN : 9781003816287

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Advanced Field-Effect Transistors by Dharmendra Singh Yadav,Shiromani Balmukund Rahi,Sukeshni Tirkey Pdf

Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: • Design and challenges in tunneling FETs • Various modeling approaches for FETs • Study of organic thin-film transistors • Biosensing applications of FETs • Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.

Author : Ting Lei
Publisher : Springer
Page : 124 pages
File Size : 54,8 Mb
Release : 2015-01-05
Category : Technology & Engineering
ISBN : 9783662456675

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Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors by Ting Lei Pdf

The book summarizes Ting Lei’s PhD study on a series of novel conjugated polymers for field-effect transistors (FETs). Studies contain many aspects of polymer FETs, including backbone design, side-chain engineering, property study, conformation effects and device fabrication. The research results have previously scattered in many important journals and conferences worldwide. The book is likely to be of interest to university researchers, engineers and graduate students in materials sciences and chemistry who wish to learn some principles, strategy, and applications of polymer FETs.

Author : Raj, Balwinder,Khosla, Mamta,Singh, Amandeep
Publisher : IGI Global
Page : 255 pages
File Size : 46,9 Mb
Release : 2019-12-06
Category : Technology & Engineering
ISBN : 9781799813958

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Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) by Raj, Balwinder,Khosla, Mamta,Singh, Amandeep Pdf

With recent advancements in electronics, specifically nanoscale devices, new technologies are being implemented to improve the properties of automated systems. However, conventional materials are failing due to limited mobility, high leakage currents, and power dissipation. To mitigate these challenges, alternative resources are required to advance electronics further into the nanoscale domain. Carbon nanotube field-effect transistors are a potential solution yet lack the information and research to be properly utilized. Major Applications of Carbon Nanotube Field-Effect Transistors (CNTFET) is a collection of innovative research on the methods and applications of converting semiconductor devices from micron technology to nanotechnology. The book provides readers with an updated status on existing CNTs, CNTFETs, and their applications and examines practical applications to minimize short channel effects and power dissipation in nanoscale devices and circuits. While highlighting topics including interconnects, digital circuits, and single-wall CNTs, this book is ideally designed for electrical engineers, electronics engineers, students, researchers, academicians, industry professionals, and practitioners working in nanoscience, nanotechnology, applied physics, and electrical and electronics engineering.

Author : Yu-Chuan Lin
Publisher : Springer
Page : 141 pages
File Size : 41,7 Mb
Release : 2018-10-23
Category : Technology & Engineering
ISBN : 9783030003326

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Properties of Synthetic Two-Dimensional Materials and Heterostructures by Yu-Chuan Lin Pdf

This book represents a significant advance in our understanding of the synthesis and properties of two-dimensional (2D) materials. The author’s work breaks new ground in the understanding of a number of 2D crystals, including atomically thin transition metal dichalcogenides, graphene, and their heterostructures, that are technologically important to next-generation electronics. In addition to critical new results on the direct growth of 2D heterostructures, it also details growth mechanisms, surface science, and device applications of “epi-grade” 2D semiconductors, which are essential to low-power electronics, as well as for extending Moore’s law. Most importantly, it provides an effective alternative to mechanically exfoliate 2D layers for practical applications.

Author : Omar Azzaroni,Wolfgang Knoll
Publisher : John Wiley & Sons
Page : 453 pages
File Size : 52,7 Mb
Release : 2023-10-16
Category : Technology & Engineering
ISBN : 9783527349906

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Graphene Field-Effect Transistors by Omar Azzaroni,Wolfgang Knoll Pdf

Graphene Field-Effect Transistors In-depth resource on making and using graphene field effect transistors for point-of-care diagnostic devices Graphene Field-Effect Transistors focuses on the design, fabrication, characterization, and applications of graphene field effect transistors, summarizing the state-of-the-art in the field and putting forward new ideas regarding future research directions and potential applications. After a review of the unique electronic properties of graphene and the production of graphene and graphene oxide, the main part of the book is devoted to the fabrication of graphene field effect transistors and their sensing applications. Graphene Field-Effect Transistors includes information on: Electronic properties of graphene, production of graphene oxide and reduced graphene oxide, and graphene functionalization Fundamentals and fabrication of graphene field effect transistors, and nanomaterial/graphene nanostructure-based field-effect transistors Graphene field-effect transistors integrated with microfluidic platforms and flexible graphene field-effect transistors Graphene field-effect transistors for diagnostics applications, and DNA biosensors and immunosensors based on graphene field-effect transistors Graphene field-effect transistors for targeting cancer molecules, brain activity recording, bacterial detection, and detection of smell and taste Providing both fundamentals of the technology and an in-depth overview of using graphene field effect transistors for fabricating bioelectronic devices that can be applied for point-of-care diagnostics, Graphene Field-Effect Transistors is an essential reference for materials scientists, engineering scientists, laboratory medics, and biotechnologists.

Author : Norman Dye,Helge Granberg
Publisher : Elsevier
Page : 320 pages
File Size : 55,8 Mb
Release : 2001-03-08
Category : Technology & Engineering
ISBN : 9780080497945

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Radio Frequency Transistors by Norman Dye,Helge Granberg Pdf

Radio Frequency Transistors: Principles and Practical Applications is a complete tool kit for successful RF circuit design. As cellular and satellite communications fields continue to expand, the need for RF circuit design grows. Radio Frequency Transistors contains a wealth of practical design information based on years of experience from authors who have worked with the leading manufacturers of RF components. The book focuses primarily on the more difficult area of high power transistor amplifier design and construction. An entire chapter devoted solely to LDMOS high power RF transistors has been added to the new edition. A comparison is given between LDMOS FETs, TMOS FETs and bipolar transistors, showing clearly why LDMOS is the designer's choice for high power, linear amplifiers in today's rapidly expanding digital world of communications. Coverage also includes applications of LDMOS RF high power transistors in current generation cellular technologies, the design of LDMOS high power amplifiers, and comments about the latest efforts to model LDMOS RF power devices. Other topics covered include the selection of matched high power RF transistors, input impedance matching of high power transistors, interstage matching, and capacitors and inductors at radio frequencies. Fully updated to include the newest cutting edge technology of RF circuit design Contains practical, hands-on design advice to help you save time, money and resources Written by engineers for engineers to use in the field

Author : Ye Zhou,Su-Ting Han
Publisher : Royal Society of Chemistry
Page : 463 pages
File Size : 48,9 Mb
Release : 2020-09-04
Category : Technology & Engineering
ISBN : 9781788019286

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Ambipolar Materials and Devices by Ye Zhou,Su-Ting Han Pdf

Ambipolar materials represent a class of materials where positive and negative charge carriers can both transport concurrently. In recent years, a diverse range of materials have been synthesized and utilized for implementing ambipolar charge transport, with applications in high‐density data storage, field effect transistors, nanotransitors, photonic memory, biomaterial-based memories and artificial synapses. This book highlights recent development of ambipolar materials involving materials design, fundamental principles, interface modifications, device structures, ambipolar characteristics and promising applications. Challenges and prospects for investigating ambipolar materials in electronics and optoelectronics are also discussed. With contributions from global leaders in the field, this title will appeal to graduate students and researchers who want to understand the design, materials characteristics, device operation principles, specialized device application and mechanisms of the latest ambipolar materials.

Author : Leon I. Maissel,Maurice H. Francombe
Publisher : CRC Press
Page : 314 pages
File Size : 50,8 Mb
Release : 1973
Category : Science
ISBN : 0677028407

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An Introduction to Thin Films by Leon I. Maissel,Maurice H. Francombe Pdf

Author : Mikhail Efimovich Levinshte?n,G. Simin
Publisher : World Scientific
Page : 266 pages
File Size : 48,8 Mb
Release : 1998
Category : Technology & Engineering
ISBN : 9810227434

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Transistors by Mikhail Efimovich Levinshte?n,G. Simin Pdf

This new book by M Levinshtein and G Simin tells the readers about the design and work of the most important and most interesting semiconductor devices ? the transistors.The book is written in a friendly and easy to read manner and is meant primarily for young people, high school students, freshmen and sophomores. However, the original approach to semiconductor physics makes this book attractive to physics teachers and professors as well.The book consists of 3 parts: Part I: The section on semiconductors describes the main properties of semiconductors, explains the difference between the semiconductors, metals and dielectrics. We find here the explanation of the appearance of those wonderful properties of semiconductors which underlie their numerous applications. This part also contains a vivid and detailed description of the main types of motion of the charge carriers in semiconductors: thermal motion, motion in the electric field and diffusion.Part II covers Barriers and Junctions. In order to understand the principles of the work of the most important semiconductor devices, it is not sufficient just to get to know the properties of semiconductors. It is also quite essential to study certain specific and interesting phenomena ? the so-called junctions. This part of the book contains a detailed and vivid description of those properties and in that view of the properties of the p-n junctions and diodes: photodiodes, varicaps, light emitting diodes, solar cells and rectifier diodes.Part III covers Transitors. It describes the basis of the work of the Bipolar and Field Effect Transistors. Without making use of rather complicated equations or notions of quantum mechanics the authors give a clear and simple explanation of the cause of ability of those devices to amplify and generate electric signals. They tell the readers how transistors are manufactured and describe the work of the transistor's simplest circuits.The last chapter of the book is devoted to the ideas underlying the transistors: integrated circuits. It is these integrated circuits which are the foundation of modern electronics: from telephone apparatus to supercomputers, from medical instruments to cosmic communication systems.In conclusion, the authors make an attempt to foresee and imagine, together with the reader what other devices may come to substitute the transistor in the future.

Author : Cherie R. Kagan,Paul Andry
Publisher : CRC Press
Page : 486 pages
File Size : 47,7 Mb
Release : 2003-02-25
Category : Technology & Engineering
ISBN : 9780824747541

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Thin-Film Transistors by Cherie R. Kagan,Paul Andry Pdf

A single-source treatment of developments in TFT production from international specialists. It interweaves overlapping areas in multiple disciplines pertinent to transistor fabrication and explores the killer application of amorphous silicon transistors in active matrix liquid crystal displays.

Author : Benjamin M. Fitzgerald
Publisher : Unknown
Page : 0 pages
File Size : 50,5 Mb
Release : 2010
Category : Semiconductors
ISBN : 1616689080

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Transistors by Benjamin M. Fitzgerald Pdf

Transistors play a central role in many electronic circuits, where they usually function as either a switch or an amplifier. This book reviews research in the field of transistors including a new class of transistors whose channels are made from semiconducting carbon nanomaterials; the evolution of these designs and the highlights of the work that has driven their development. Also discussed, herein, are the electronic properties and self-consistent simulations of carbon nanotubes in transistor technology; the future developments in the nanowire field-effect transistor research area; the implementation of chaotic oscillators by using transistors designed with CMOS integrated circuit technology and others.