Reliability Of High Mobility Sige Channel Mosfets For Future Cmos Applications

Author : Jacopo Franco,Ben Kaczer,Guido Groeseneken
Publisher : Springer Science & Business Media
Page : 203 pages
File Size : 42,6 Mb
Release : 2013-10-19
Category : Technology & Engineering
ISBN : 9789400776630

Get Book

Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications by Jacopo Franco,Ben Kaczer,Guido Groeseneken Pdf

Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.

Author : Duygu Kuzum
Publisher : Stanford University
Page : 159 pages
File Size : 42,8 Mb
Release : 2009
Category : Electronic
ISBN : STANFORD:vh980ht4102

Get Book

Interface-engineered Ge MOSFETs for Future High Performance CMOS Applications by Duygu Kuzum Pdf

As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, introduction of performance boosters like novel materials and innovative device structures has become necessary for the future of CMOS. High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge has particularly become of great interest as a channel material, owing to its high bulk hole and electron mobilities. However, replacement of Si channel by Ge requires several critical issues to be addressed in Ge MOS technology. High quality gate dielectric for surface passivation, low parasitic source/drain resistance and performance improvement in Ge NMOS are among the major challenges in realizing Ge CMOS. Detailed characterization of gate dielectric/channel interface and a deeper understanding of mobility degradation mechanisms are needed to address the Ge NMOS performance problem and to improve PMOS performance. In the first part of this dissertation, the electrical characterization results on Ge NMOS and PMOS devices fabricated with GeON gate dielectric are presented. Carrier scattering mechanisms are studied through low temperature mobility measurements. For the first time, the effect of substrate crystallographic orientation on inversion electron and hole mobilities is investigated. Direct formation of a high-k dielectric on Ge has not given good results in the past. A good quality interface layer is required before the deposition of a high-K dielectric. In the second part of this dissertation, ozone-oxidation process is introduced to engineer Ge/insulator interface. Electrical and structural characterizations and stability analysis are carried out and high quality Ge/dielectric interface with low interface trap density is demonstrated. Detailed extraction of interface trap density distribution across the bandgap and close to band edges of Ge, using low temperature conductance and capacitance measurements is presented. Ge N-MOSFETs have exhibited poor drive currents and low mobility, as reported by several different research groups worldwide. In spite of the increasing interest in Ge, the major mechanisms behind poor Ge NMOS performance have not been completely understood yet. In the last part of this dissertation, the results on Ge NMOS devices fabricated with the ozone-oxidation and the low temperature source/drain activation processes are discussed. These devices achieve the highest electron mobility to-date, about 1.5 times the universal Si mobility. Detailed interface characterizations, trapping analyses and gated Hall device measurements are performed to identify the mechanisms behind poor Ge NMOS performance in the past.

Author : Anonim
Publisher : ASM International
Page : 128 pages
File Size : 48,9 Mb
Release : 2018-12-01
Category : Electronic
ISBN : 9781627080996

Get Book

ISTFA 2018: Proceedings from the 44th International Symposium for Testing and Failure Analysis by Anonim Pdf

The International Symposium for Testing and Failure Analysis (ISTFA) 2018 is co-located with the International Test Conference (ITC) 2018, October 28 to November 1, in Phoenix, Arizona, USA at the Phoenix Convention Center. The theme for the November 2018 conference is "Failures Worth Analyzing." While technology advances fast and the market demands the latest and the greatest, successful companies strive to stay competitive and remain profitable.

Author : Nadine Collaert
Publisher : Woodhead Publishing
Page : 384 pages
File Size : 52,7 Mb
Release : 2018-06-29
Category : Technology & Engineering
ISBN : 9780081020623

Get Book

High Mobility Materials for CMOS Applications by Nadine Collaert Pdf

High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability Provides a broad overview of the topic, from materials integration to circuits

Author : Chinmay K. Maiti
Publisher : CRC Press
Page : 275 pages
File Size : 55,8 Mb
Release : 2021-06-29
Category : Science
ISBN : 9781000404937

Get Book

Stress and Strain Engineering at Nanoscale in Semiconductor Devices by Chinmay K. Maiti Pdf

Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.

Author : Serge Oktyabrsky,Peide Ye
Publisher : Springer Science & Business Media
Page : 451 pages
File Size : 42,7 Mb
Release : 2010-03-16
Category : Technology & Engineering
ISBN : 9781441915474

Get Book

Fundamentals of III-V Semiconductor MOSFETs by Serge Oktyabrsky,Peide Ye Pdf

Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Author : Anonim
Publisher : Unknown
Page : 2540 pages
File Size : 41,5 Mb
Release : 2002
Category : Chemistry
ISBN : UOM:39015057321377

Get Book

Chemical Abstracts by Anonim Pdf

Author : Ming-Fu Li
Publisher : World Scientific
Page : 529 pages
File Size : 44,7 Mb
Release : 2011
Category : Technology & Engineering
ISBN : 9781848164062

Get Book

Selected Semiconductor Research by Ming-Fu Li Pdf

This book on solid state physics has been written with an emphasis on recent developments in quantum many-body physics approaches. It starts by covering the classical theory of solids and electrons and describes how this classical model has failed. The authors then present the quantum mechanical model of electrons in a lattice and they also discuss the theory of conductivity. Extensive reviews on the topic are provided in a compact manner so that any non-specialist can follow from the beginning.The authors cover the system of magnetism in a similar way and various problems in magnetic materials are discussed. The book also discusses the Ising chain, the Heisenberg model, the Kondo effect and superconductivity, amongst other relevant topics.In the final chapter, the authors present some works related to contemporary research topics, such as quantum entanglement in many-body systems and quantum simulations. They also include a short review of some of the possible applications of solid state quantum information in biological systems.

Author : C.K. Maiti,T.K. Maiti
Publisher : CRC Press
Page : 320 pages
File Size : 51,5 Mb
Release : 2018-10-03
Category : Technology & Engineering
ISBN : 9781466503472

Get Book

Strain-Engineered MOSFETs by C.K. Maiti,T.K. Maiti Pdf

Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.

Author : Tibor Grasser
Publisher : Springer Science & Business Media
Page : 805 pages
File Size : 54,9 Mb
Release : 2013-10-22
Category : Technology & Engineering
ISBN : 9781461479093

Get Book

Bias Temperature Instability for Devices and Circuits by Tibor Grasser Pdf

This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.

Author : Anonim
Publisher : Unknown
Page : 1948 pages
File Size : 41,8 Mb
Release : 1997
Category : Electrical engineering
ISBN : OSU:32435059588657

Get Book

Electrical & Electronics Abstracts by Anonim Pdf

Author : Yasuhisa Omura,Abhijit Mallik,Naoto Matsuo
Publisher : John Wiley & Sons
Page : 483 pages
File Size : 40,7 Mb
Release : 2017-02-28
Category : Technology & Engineering
ISBN : 9781119107354

Get Book

MOS Devices for Low-Voltage and Low-Energy Applications by Yasuhisa Omura,Abhijit Mallik,Naoto Matsuo Pdf

Helps readers understand the physics behind MOS devices for low-voltage and low-energy applications Based on timely published and unpublished work written by expert authors Discusses various promising MOS devices applicable to low-energy environmental and biomedical uses Describes the physical effects (quantum, tunneling) of MOS devices Demonstrates the performance of devices, helping readers to choose right devices applicable to an industrial or consumer environment Addresses some Ge-based devices and other compound-material-based devices for high-frequency applications and future development of high performance devices. "Seemingly innocuous everyday devices such as smartphones, tablets and services such as on-line gaming or internet keyword searches consume vast amounts of energy. Even when in standby mode, all these devices consume energy. The upcoming 'Internet of Things' (IoT) is expected to deploy 60 billion electronic devices spread out in our homes, cars and cities. Britain is already consuming up to 16 per cent of all its power through internet use and this rate is doubling every four years. According to The UK's Daily Mail May (2015), if usage rates continue, all of Britain's power supply could be consumed by internet use in just 20 years. In 2013, U.S. data centers consumed an estimated 91 billion kilowatt-hours of electricity, corresponding to the power generated by seventeen 1000-megawatt nuclear power plants. Data center electricity consumption is projected to increase to roughly 140 billion kilowatt-hours annually by 2020, the equivalent annual output of 50 nuclear power plants." —Natural Resources Defense Council, USA, Feb. 2015 All these examples stress the urgent need for developing electronic devices that consume as little energy as possible. The book “MOS Devices for Low-Voltage and Low-Energy Applications” explores the different transistor options that can be utilized to achieve that goal. It describes in detail the physics and performance of transistors that can be operated at low voltage and consume little power, such as subthreshold operation in bulk transistors, fully depleted SOI devices, tunnel FETs, multigate and gate-all-around MOSFETs. Examples of low-energy circuits making use of these devices are given as well. "The book MOS Devices for Low-Voltage and Low-Energy Applications is a good reference for graduate students, researchers, semiconductor and electrical engineers who will design the electronic systems of tomorrow." —Dr. Jean-Pierre Colinge, Taiwan Semiconductor Manufacturing Company (TSMC) "The authors present a creative way to show how different MOS devices can be used for low-voltage and low-power applications. They start with Bulk MOSFET, following with SOI MOSFET, FinFET, gate-all-around MOSFET, Tunnel-FET and others. It is presented the physics behind the devices, models, simulations, experimental results and applications. This book is interesting for researchers, graduate and undergraduate students. The low-energy field is an important topic for integrated circuits in the future and none can stay out of this." —Prof. Joao A. Martino, University of Sao Paulo, Brazil

Author : Babu Suryadevara
Publisher : Woodhead Publishing
Page : 650 pages
File Size : 45,6 Mb
Release : 2021-09-10
Category : Technology & Engineering
ISBN : 9780128218198

Get Book

Advances in Chemical Mechanical Planarization (CMP) by Babu Suryadevara Pdf

Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. Reviews the most relevant techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for current and emerging materials Addresses consumables and process control for improved CMP, including post-CMP

Author : Anonim
Publisher : Unknown
Page : 332 pages
File Size : 47,6 Mb
Release : 2003
Category : Physics
ISBN : UCSD:31822022858682

Get Book

Japanese Journal of Applied Physics by Anonim Pdf

Author : Muhammad Mustafa Hussain
Publisher : John Wiley & Sons
Page : 284 pages
File Size : 49,7 Mb
Release : 2019-01-04
Category : Technology & Engineering
ISBN : 9783527343584

Get Book

Advanced Nanoelectronics by Muhammad Mustafa Hussain Pdf

Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to "think outside the box" and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.