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Author : M. Jamal Deen
Publisher : The Electrochemical Society
Page : 610 pages
File Size : 45,7 Mb
Release : 1997
Category : Science
ISBN : 1566771374
Author : Electrochemical Society. Meeting
Publisher : The Electrochemical Society
Page : 652 pages
File Size : 43,8 Mb
Release : 2003
Category : Science
ISBN : 1566773474
Author : Electrochemical Society. Dielectric Science and Technology Division
Publisher : The Electrochemical Society
Page : 304 pages
File Size : 48,6 Mb
Release : 2001
Category : Science
ISBN : 156677313X
Author : Vikram J. Kapoor,William D. Brown
Publisher : The Electrochemical Society
Page : 644 pages
File Size : 43,7 Mb
Release : 1994
Category : Science
ISBN : 1566770483
Author : Ram Ekwal Sah
Publisher : The Electrochemical Society
Page : 606 pages
File Size : 49,5 Mb
Release : 2005
Category : Nature
ISBN : 1566774594
Author : Vikram J. Kapoor,Kevin T. Hankins
Publisher : Unknown
Page : 570 pages
File Size : 55,9 Mb
Release : 1987
Category : Electric and insulation
ISBN : PSU:000018967890
Author : K. B. Sundaram,M. J. Deen,W. D. Brown
Publisher : The Electrochemical Society
Page : 300 pages
File Size : 51,8 Mb
Release : 1999
Category : Science
ISBN : 1566772281
Author : Vik J. Kapoor,Kevin T. Hankins,Electrochemical Society. Dielectrics and Insulation Division,Electrochemical Society. High Temperature Materials Division
Publisher : Unknown
Page : 550 pages
File Size : 40,8 Mb
Release : 1987
Category : Electronic
ISBN : OCLC:610341408
Author : Anonim
Publisher : Unknown
Page : 306 pages
File Size : 55,5 Mb
Release : 1999
Category : Silicon dioxide
ISBN : UOM:39015058899223
Author : Ram Ekwal Sah
Publisher : The Electrochemical Society
Page : 863 pages
File Size : 54,6 Mb
Release : 2007
Category : Dielectric films
ISBN : 9781566775526
This issue of ECS Transactions contains the papers presented in the symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectics held May 6-11, 2007 in Chicago. Papers were presented on deposition, characterization and applications of the dielectrics including high- and low-k dielectrics, as well as interface states, device characterization, reliabiliy and modeling.
Author : John T. Milek
Publisher : Springer Science & Business Media
Page : 126 pages
File Size : 45,6 Mb
Release : 2013-03-14
Category : Technology & Engineering
ISBN : 9781468461626
The large amount of literature on the technology of thin film silicon nitride indi cates the interest of the Department of Defense, NASA and the semiconductor industry in the development and full utilization of the material. This survey is concerned only with the thin film characteristics and properties of silicon nitride as currently utilized by the semiconductor or microelectronics industry. It also includes the various methods of preparation. Applications in microelectronic devices and circuits are to be provided in Part 2 of the survey. Some bulk silicon nitride property data is included for basic reference and comparison purposes. The survey specifically excludes references and information not within the public domain. ACKNOWLEDGEMENT This survey was generated under U.S. Air Force Contract F33615-70-C-1348, with Mr. B.R. Emrich (MAAM) Air Force Materials Laboratory, Wright-Patterson Air Force Base, Ohio acting as Project Engineer. The author would like to acknowledge the assis tance of Dr. Judd Q. Bartling, Litton Systems, Inc., Guidance and Control Systems Division, Woodland Hills, California and Dr. Thomas C. Hall, Hughes Aircraft Company, Culver City, California in reviewing the survey. v CONTENTS Preface. i Introduction 1 Literature Review. 1 Bulk Characteristics 1 Technology Overview. 2 References 4 Methods of Preparation • 5 Introduction • 5 Direct Nitridation Method 8 Evaporation Method • 9 Glow Discharge Method. 10 Ion Beam Method. 13 Sputtering Methods 13 Pyrolytic Methods. 15 Silane and Ammonia Reaction 15 Silicon Tetrachloride and Tetrafluoride Reaction. 24 Silane and Hydrazine Reaction 27 Production Operations. 28 Equipment.
Author : R. Ekwal Sah,M. Jamal Deen
Publisher : The Electrochemical Society
Page : 871 pages
File Size : 42,8 Mb
Release : 2009
Category : Dielectric films
ISBN : 9781566777100
The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.
Author : Electrochemical society. Meeting
Publisher : The Electrochemical Society
Page : 950 pages
File Size : 52,8 Mb
Release : 2011
Category : Science
ISBN : 9781566778657
This issue of ECS Transactions contains the peer-reviewed full length papers of the International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics held May 1-6, 2011 in Montreal as a part of the 219th Meeting of The Electrochemical Society. The papers address a very diverse range of topics. In addition to the deposition and characterization of the dielectrics, more specific topics addressed by the papers include applications, device characterization and reliability, interface states, interface traps, defects, transistor and gate oxide studies, and modeling.
Author : F.H.P.M. Habraken
Publisher : Springer
Page : 178 pages
File Size : 45,5 Mb
Release : 1991-05-28
Category : Science
ISBN : UOM:39015023311569
The present book collects a broad overview of chemical and physical char acteristics of silicon oxynitrides. Special emphasis is put on the way in which these properties influence the electrical characteristics and behaviour of this important material. The results presented here were obtained in an ex tended European research cooperation in the framework of ESPRIT Project 369 'Physical-chemical characterization of silicon oxynitrides in relation to their electrical properties', which ran from 1984 to 1988. In this project two industrial laboratories (Philips Research Laborato ries in Eindhoven, the Netherlands, and Matra Harris Semiconductors from Nantes, France) cooperated with various academic and government research laboratories (Harwell Laboratory in Great Britain, the Interuniversity Micro electronics Center (IMEC) in Leuven, Belgium, and the Faculty of Physics at the University of Utrecht in the Netherlands). The latter partner acted as prime contractor for the project. General interest in silicon oxynitrides for applications in integrated circuit technology stems from the fact that proper choice of deposition conditions enables one to produce materials with properties which can be either oxide like or nitride-like. Of, course, in I.C. technology one would like to combine the good properties ofthe two materials, i.e. superior electrical properties of silicon oxide and good diffusion barrier behaviour of silicon nitride, to men tion only a few, without paying for such an operation by obtaining all the less desirable properties in such a mixed material.
Author : Roderick A. B. Devine
Publisher : Elsevier Publishing Company
Page : 532 pages
File Size : 43,7 Mb
Release : 1995
Category : Science
ISBN : 0444821619
These proceedings present a review of the research being carried out in the field of amorphous insulating thin films. Topics discussed include: nitrides, structure and defects; hydrogen in MOS structures and oxides; silicon dioxide, charge trapping; and ONO and nitride oxides.