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Author : J. A. Martino,J. P. Raskin,S. Selberherr,H. Ishii,F. Gamiz,B. Y. Nguyen,A. Yoshino
Publisher : The Electrochemical Society
Page : 230 pages
File Size : 48,9 Mb
Release : 2018-05-04
Category : Science
ISBN : 9781607688365
Author : Chinmay K. Maiti
Publisher : CRC Press
Page : 314 pages
File Size : 42,7 Mb
Release : 2022-11-17
Category : Technology & Engineering
ISBN : 9781000638110
This book deals with 3D nanodevices such as nanowire and nanosheet transistors at 7 nm and smaller technology nodes. It discusses technology computer-aided design (TCAD) simulations of stress- and strain-engineered advanced semiconductor devices, including III-nitride and RF FDSOI CMOS, for flexible and stretchable electronics. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including fabless intelligent manufacturing. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. In order to extend the role of TCAD in the More-than-Moore era, the design issues related to strain engineering for flexible and stretchable electronics have been introduced for the first time.
Author : Chinmay K. Maiti
Publisher : CRC Press
Page : 275 pages
File Size : 43,8 Mb
Release : 2021-06-29
Category : Science
ISBN : 9781000404937
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
Author : Yoshio Nishi,Blanka Magyari-Kope
Publisher : Woodhead Publishing
Page : 662 pages
File Size : 41,7 Mb
Release : 2019-06-15
Category : Science
ISBN : 9780081025857
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping and resistive random access memory
Author : Zarin Tasnim Sandhie,Farid Uddin Ahmed,Masud H. Chowdhury
Publisher : Springer Nature
Page : 110 pages
File Size : 42,9 Mb
Release : 2022-10-28
Category : Technology & Engineering
ISBN : 9783031161957
This book provides readers with an overview of the fundamental definitions and features of Multiple-Valued Logic (MVL). The authors include a brief discussion of the historical development of MVL technologies, while the main goal of the book is to present a comprehensive review of different technologies that are being explored to implement multiple-valued or beyond-binary memory circuits and systems. The discussion includes the basic features, prospects, and challenges of each technology, while highlighting the significant works done on different branches of MVL memory architecture, such as sequential circuits, random access memory, Flash memory, etc.
Author : Geno Nikolov,Natalia Kolkovska,Krassimir Georgiev
Publisher : Springer
Page : 500 pages
File Size : 48,7 Mb
Release : 2019-01-21
Category : Computers
ISBN : 9783030106928
This book constitutes the thoroughly refereed post-conference proceedings of the 9th International Conference on Numerical Methods and Applications, NMA 2018, held in Borovets, Bulgaria, in August 2018. The 56 revised regular papers presented were carefully reviewed and selected from 61 submissions for inclusion in this book. The papers are organized in the following topical sections: numerical search and optimization; problem-driven numerical method: motivation and application, numerical methods for fractional diffusion problems; orthogonal polynomials and numerical quadratures; and Monte Carlo and Quasi-Monte Carlo methods.
Author : Niccolò Rinaldi,Michael Schröter
Publisher : CRC Press
Page : 377 pages
File Size : 49,7 Mb
Release : 2022-09-01
Category : Technology & Engineering
ISBN : 9781000794403
The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Author : Tibor Grasser
Publisher : Springer Nature
Page : 724 pages
File Size : 51,9 Mb
Release : 2020-04-26
Category : Technology & Engineering
ISBN : 9783030375003
This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
Author : Eberhard Bär,Jürgen Lorenz,Peter Pichler
Publisher : Unknown
Page : 128 pages
File Size : 47,5 Mb
Release : 2016
Category : Computer-aided design
ISBN : 1509008187
Author : Lado Filipovic,Tibor Grasser
Publisher : MDPI
Page : 202 pages
File Size : 47,5 Mb
Release : 2019-06-24
Category : Technology & Engineering
ISBN : 9783039210107
What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.
Author : IEEE Staff
Publisher : Unknown
Page : 128 pages
File Size : 43,9 Mb
Release : 2016-09-06
Category : Electronic
ISBN : 1509008195
Following the 20 years tradition of the SISPAD conference series as the leading forum for Technology Computer Aided Design (TCAD), the conference provides an opportunity for the presentation and discussion of recent advances in modeling and simulation of semiconductor devices, processes and equipment The scientific program consists of invited and contributed presentations and a poster session Companion workshops are planned for September 5, 2016
Author : Massimo Rudan,Rossella Brunetti,Susanna Reggiani
Publisher : Springer Nature
Page : 1680 pages
File Size : 54,5 Mb
Release : 2022-11-10
Category : Technology & Engineering
ISBN : 9783030798277
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Author : Ivan Lirkov,Svetozar Margenov
Publisher : Springer Nature
Page : 636 pages
File Size : 55,9 Mb
Release : 2020-02-13
Category : Computers
ISBN : 9783030410322
This book constitutes revised papers from the 12th International Conference on Large-Scale Scientific Computing, LSSC 2019, held in Sozopol, Bulgaria, in June 2019. The 70 papers presented in this volume were carefully reviewed and selected from 81 submissions. The book also contains two invited talks. The papers were organized in topical sections named as follows: control and optimization of dynamical systems; meshfree and particle methods; fractional diffusion problems: numerical methods, algorithms and applications; pore scale flow and transport simulation; tensors based algorithms and structures in optimization and applications; HPC and big data: algorithms and applications; large-scale models: numerical methods, parallel computations and applications; monte carlo algorithms: innovative applications in conjunctions with other methods; application of metaheuristics to large-scale problems; large scale machine learning: multiscale algorithms and performance guarantees; and contributed papers.
Author : Sergio Saponara,Alessandro De Gloria
Publisher : Springer
Page : 503 pages
File Size : 52,8 Mb
Release : 2019-05-10
Category : Technology & Engineering
ISBN : 9783030119737
This book provides a thorough overview of cutting-edge research on electronics applications relevant to industry, the environment, and society at large. It covers a broad spectrum of application domains, from automotive to space and from health to security, while devoting special attention to the use of embedded devices and sensors for imaging, communication and control. The book is based on the 2018 ApplePies Conference, held in Pisa, Italy in September 2018, which brought together researchers and stakeholders to consider the most significant current trends in the field of applied electronics and to debate visions for the future. Areas addressed by the conference included information communication technology; biotechnology and biomedical imaging; space; secure, clean and efficient energy; the environment; and smart, green and integrated transport. As electronics technology continues to develop apace, constantly meeting previously unthinkable targets, further attention needs to be directed toward the electronics applications and the development of systems that facilitate human activities. This book, written by industrial and academic professionals, represents a valuable contribution in this endeavor.
Author : Alexandra Zimpeck,Cristina Meinhardt,Laurent Artola,Ricardo Reis
Publisher : Springer Nature
Page : 131 pages
File Size : 42,6 Mb
Release : 2021-03-10
Category : Technology & Engineering
ISBN : 9783030683689
This book evaluates the influence of process variations (e.g. work-function fluctuations) and radiation-induced soft errors in a set of logic cells using FinFET technology, considering the 7nm technological node as a case study. Moreover, for accurate soft error estimation, the authors adopt a radiation event generator tool (MUSCA SEP3), which deals both with layout features and electrical properties of devices. The authors also explore four circuit-level techniques (e.g. transistor reordering, decoupling cells, Schmitt Trigger, and sleep transistor) as alternatives to attenuate the unwanted effects on FinFET logic cells. This book also evaluates the mitigation tendency when different levels of process variation, transistor sizing, and radiation particle characteristics are applied in the design. An overall comparison of all methods addressed by this work is provided allowing to trace a trade-off between the reliability gains and the design penalties of each approach regarding the area, performance, power consumption, single event transient (SET) pulse width, and SET cross-section.
