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Author : Anonim
Publisher : Unknown
Page : 354 pages
File Size : 44,8 Mb
Release : 1963
Category : Ceramic metals
ISBN : UOM:39015077597238
Author : Anonim
Publisher : Unknown
Page : 1040 pages
File Size : 45,9 Mb
Release : 1973
Category : Aeronautics
ISBN : UIUC:30112106854216
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author : Anonim
Publisher : Unknown
Page : 1212 pages
File Size : 55,9 Mb
Release : 1975
Category : Nuclear energy
ISBN : UOM:39015026173941
Author : Hadis Morkoç
Publisher : John Wiley & Sons
Page : 1311 pages
File Size : 52,8 Mb
Release : 2009-07-30
Category : Technology & Engineering
ISBN : 9783527628469
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.
Author : K. L. Mittal,Wei-Sheng Lei
Publisher : John Wiley & Sons
Page : 444 pages
File Size : 40,5 Mb
Release : 2018-01-17
Category : Technology & Engineering
ISBN : 9781119185086
The acronym Laser is derived from Light Amplification by Stimulated Emission of Radiation. With the advent of the ruby laser in 1960, there has been tremendous research activity in developing novel, more versatile and more efficient laser sources or devices, as lasers applications are ubiquitous. Today, lasers are used in many areas of human endeavor and are routinely employed in a host of diverse fields: various branches of engineering, microelectronics, biomedical, medicine, dentistry, surgery, surface modification, to name just a few. In this book (containing 10 chapters) we have focused on application of lasers in adhesion and related areas. The topics covered include: • Topographical modification of polymers and metals by laser ablation to create superhydrophobic surfaces. • Non-ablative laser surface modification. • Laser surface modification to enhance adhesion. • Laser surface engineering of materials to modulate their wetting behavior • Laser surface modification in dentistry. • Laser polymer welding. • Laser based adhesion testing technique to measure thin film-substrate interface toughness. • Laser surface removal of hard thin ceramic coatings. • Laser removal of particles from surfaces. • Laser induced thin film debonding for micro-device fabrication applications.
Author : U.S. Atomic Energy Commission. Division of Technical Information
Publisher : Unknown
Page : 932 pages
File Size : 44,9 Mb
Release : 2024-07-01
Category : Nuclear energy
ISBN : STANFORD:36105132166161
Author : Anonim
Publisher : Unknown
Page : 1654 pages
File Size : 49,5 Mb
Release : 1965
Category : Government publications
ISBN : MINN:31951000578214D
Author : Anonim
Publisher : Unknown
Page : 162 pages
File Size : 50,9 Mb
Release : 1963
Category : Science
ISBN : UOM:39015086566356
Author : Anonim
Publisher : Unknown
Page : 394 pages
File Size : 51,8 Mb
Release : 1965
Category : Energy development
ISBN : CORNELL:31924105643914
Author : Anonim
Publisher : Unknown
Page : 384 pages
File Size : 48,8 Mb
Release : 1965
Category : Government contractors
ISBN : UOM:39015095047315
Author : University of California. Lawrence Radiation Laboratory
Publisher : Unknown
Page : 22 pages
File Size : 54,5 Mb
Release : 1966
Category : Bibliography
ISBN : UOM:39015095224088
Author : Anonim
Publisher : Newnes
Page : 3572 pages
File Size : 47,8 Mb
Release : 2011-01-28
Category : Science
ISBN : 9780080932286
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Author : Mohamed Henini
Publisher : Newnes
Page : 744 pages
File Size : 53,8 Mb
Release : 2012-12-31
Category : Technology & Engineering
ISBN : 9780123918598
This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a ‘how to’ on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum. MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. Condenses fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community
Author : Lawrence Radiation Laboratory. Inorganic Materials Research Division
Publisher : Unknown
Page : 180 pages
File Size : 44,5 Mb
Release : 1964
Category : Chemistry, Inorganic
ISBN : UOM:39015077325598
Author : Edward T. Yu
Publisher : CRC Press
Page : 715 pages
File Size : 54,5 Mb
Release : 2022-10-30
Category : Technology & Engineering
ISBN : 9781000715958
The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.