The Heteroepitaxial Growth Of Ybco And Other Metal Oxides On Silicon And Gaas By Pulsed Laser Deposition

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Dissertation Abstracts International

Author : Anonim
Publisher : Unknown
Page : 742 pages
File Size : 45,7 Mb
Release : 1992
Category : Dissertations, Academic
ISBN : STANFORD:36105020027541

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Dissertation Abstracts International by Anonim Pdf

American Doctoral Dissertations

Author : Anonim
Publisher : Unknown
Page : 800 pages
File Size : 47,7 Mb
Release : 1994
Category : Dissertation abstracts
ISBN : UOM:39015086908228

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American Doctoral Dissertations by Anonim Pdf

Epitaxial Oxide Thin Films and Heterostructures: Volume 341

Author : David K. Fork
Publisher : Mrs Proceedings
Page : 432 pages
File Size : 46,5 Mb
Release : 1994-08-15
Category : Technology & Engineering
ISBN : UCSD:31822018697649

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Epitaxial Oxide Thin Films and Heterostructures: Volume 341 by David K. Fork Pdf

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Thirty-second Annual Report on Materials Research at Stanford University, January 1, 1992 - December 31, 1992

Author : Stanford University. Center for Materials Research
Publisher : Unknown
Page : 176 pages
File Size : 48,5 Mb
Release : 1992
Category : Electronic
ISBN : STANFORD:36105046357641

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Thirty-second Annual Report on Materials Research at Stanford University, January 1, 1992 - December 31, 1992 by Stanford University. Center for Materials Research Pdf

Physics Briefs

Author : Anonim
Publisher : Unknown
Page : 1162 pages
File Size : 54,5 Mb
Release : 1994
Category : Physics
ISBN : UOM:39015027832966

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Physics Briefs by Anonim Pdf

International Aerospace Abstracts

Author : Anonim
Publisher : Unknown
Page : 934 pages
File Size : 44,8 Mb
Release : 1999
Category : Aeronautics
ISBN : STANFORD:36105021811380

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International Aerospace Abstracts by Anonim Pdf

Ceramic Abstracts

Author : Anonim
Publisher : Unknown
Page : 1040 pages
File Size : 45,8 Mb
Release : 1998
Category : Ceramics
ISBN : CORNELL:31924077942690

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Ceramic Abstracts by Anonim Pdf

Chemical Abstracts

Author : Anonim
Publisher : Unknown
Page : 2670 pages
File Size : 46,8 Mb
Release : 2002
Category : Chemistry
ISBN : UOM:39015057324397

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Chemical Abstracts by Anonim Pdf

Science Abstracts

Author : Anonim
Publisher : Unknown
Page : 1360 pages
File Size : 48,8 Mb
Release : 1995
Category : Electrical engineering
ISBN : OSU:32435051560209

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Science Abstracts by Anonim Pdf

Electron Optical Studies of Heteroepitaxial Growth of Beta Silicon Carbide Layers Through Molten Metal Intermediates

Author : Joseph J. Comer,Irvin Berman
Publisher : Unknown
Page : 30 pages
File Size : 54,8 Mb
Release : 1970
Category : Epitaxy
ISBN : UOM:39015095296995

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Electron Optical Studies of Heteroepitaxial Growth of Beta Silicon Carbide Layers Through Molten Metal Intermediates by Joseph J. Comer,Irvin Berman Pdf

Beta silicon carbide has the potential of becoming an important semiconductor device material for hazardous military environments such as high temperature and radiation. This report is concerned with a study of the growth of thin single crystal films of beta silicon carbide through molten metal intermediates. Thin films of nickel, cobalt, chromium and iron were deposited by vacuum deposition on to the (0001) faces of single crystals of alpha silicon carbide. Then heteroepitaxial layers of beta silicon carbide were deposited through the molten metal films by the hydrogen reduction of methyltrichlorosilane. The deposited films were studied by electron microscopy, electron diffraction and electron beam microprobe analysis to determine the growth mechanism and to arrive at optimum conditions for heteroepitaxial growth. From the results obtained it was concluded that nickel and cobalt were equally effective in promoting epitaxial growth. Films of nickel only 20A in thickness were as effective as those up to 300A. Results with chromium and iron were disappointing for different reasons. Chromium did not etch the substrate surface uniformly because of poor wetting. With iron, whisker growth of beta silicon carbide occurred at the surface. Although in many respects the growth of mechanism resembled that of the vapor-liquid-solid method, certain differences were observed which make the actual growth mechanism using nickel and cobalt films still uncertain. (Author).

Electrical & Electronics Abstracts

Author : Anonim
Publisher : Unknown
Page : 2304 pages
File Size : 51,9 Mb
Release : 1997
Category : Electrical engineering
ISBN : OSU:32435059589309

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Electrical & Electronics Abstracts by Anonim Pdf