The Monte Carlo Method For Semiconductor Device Simulation
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The Monte Carlo Method for Semiconductor Device Simulation by Carlo Jacoboni,Paolo Lugli Pdf
This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.
Monte Carlo Simulation of Semiconductor Devices by C. Moglestue Pdf
Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.
Hierarchical Device Simulation by Christoph Jungemann,Bernd Meinerzhagen Pdf
This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.
Simulation of Semiconductor Devices and Processes by Heiner Ryssel,Peter Pichler Pdf
SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.
The information revolution would have been radically different, or impossible, without the use of the materials known generically as semiconductors. The properties of these materials, particularly the potential for doping with impurities to create transistors and diodes and controlling the local potential by gates, are essential for microelectronics. Semiconductor Transport is an introductory text on electron transport in semiconductor materials and is written for advanced undergraduates and graduate students. The book provides a thorough treatment of modern approaches to the transport properties of semiconductors and their calculation. It also introduces those aspects of solid state physics, which are vitally important for understanding transport in them.
Introduction to Semiconductor Device Modelling by Christopher M. Snowden Pdf
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Handbook of Optoelectronic Device Modeling and Simulation by Joachim Piprek Pdf
Provides a comprehensive survey of fundamental concepts and methods for optoelectronic device modeling and simulation. Gives a broad overview of concepts with concise explanations illustrated by real results. Compares different levels of modeling, from simple analytical models to complex numerical models. Discusses practical methods of model validation. Includes an overview of numerical techniques.
Computational Electronics by Dragica Vasileska,Stephen Goodnick Pdf
Computational Electronics is devoted to state of the art numerical techniques and physical models used in the simulation of semiconductor devices from a semi-classical perspective. Computational electronics, as a part of the general Technology Computer Aided Design (TCAD) field, has become increasingly important as the cost of semiconductor manufacturing has grown exponentially, with a concurrent need to reduce the time from design to manufacture. The motivation for this volume is the need within the modeling and simulation community for a comprehensive text which spans basic drift-diffusion modeling, through energy balance and hydrodynamic models, and finally particle based simulation. One unique feature of this book is a specific focus on numerical examples, particularly the use of commercially available software in the TCAD community. The concept for this book originated from a first year graduate course on computational electronics, taught now for several years, in the Electrical Engineering Department at Arizona State University. Numerous exercises and projects were derived from this course and have been included. The prerequisite knowledge is a fundamental understanding of basic semiconductor physics, the physical models for various device technologies such as pndiodes, bipolar junction transistors, and field effect transistors.
Advanced Device Modeling and Simulation by Tibor Grasser Pdf
Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulation. As such it presents extensive reviews and original research by outstanding scientists. The bulk of the book is concerned with the theory of classical and quantum-mechanical transport modeling, based on macroscopic, spherical harmonics and Monte Carlo methods.
Semiconductor Device Modelling by Christopher M. Snowden Pdf
Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.
Author : Christopher M. Snowden,Robert E. Miles Publisher : Springer Science & Business Media Page : 295 pages File Size : 53,9 Mb Release : 2012-12-06 Category : Technology & Engineering ISBN : 9781447120483
Compound Semiconductor Device Modelling by Christopher M. Snowden,Robert E. Miles Pdf
Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low frequency counterparts . . Over the past twenty years a wide range of modelling techniques have emerged suitable for describing the operation of compound semiconductor devices. This book brings together for the first time the most popular techniques in everyday use by engineers and scientists. The book specifically addresses the requirements and techniques suitable for modelling GaAs, InP. ternary and quaternary semiconductor devices found in modern technology.
Transport Simulation in Microelectronics by Alfred Kersch,William J. Morokoff Pdf
Computer simulation of semiconductor processing equipment and devices requires the use of a wide variety of numerical methods. Of these methods, the Monte Carlo approach is perhaps most fundamentally suited to mod eling physical events occurring on microscopic scales which are intricately connected to the particle structure of nature. Here physical phenomena can be simulated by following simulation particles (such as electrons, molecules, photons, etc. ) through a statistical sampling of scattering events. Monte Carlo is, however, generally looked on as a last resort due to the extremely slow convergence of these methods. It is of interest, then, to examine when in microelectronics it is necessary to use Monte Carlo methods, how such methods may be improved, and what are the alternatives. This book ad dresses three general areas of simulation which frequently arise in semicon ductor modeling where Monte Carlo methods playa significant role. In the first chapter the basic mathematical theory of the Boltzmann equation for particle transport is presented. The following chapters are devoted to the modeling of the transport processes and the associated Monte Carlo meth ods. Specific examples of industrial applications illustrate the effectiveness and importance of these methods. Two of these areas concern simulation of physical particles which may be assigned a time dependent position and velocity. This includes the molecules of a dilute gas used in such processing equipment as chemi cal vapor decomposition reactors and sputtering reactors. We also consider charged particles moving within a semiconductor lattice.
Simulation of Semiconductor Devices and Processes, Vol. 6 by Heiner Ryssel,Peter Pichler Pdf
SISDEP '95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.
Sequential Monte Carlo Methods in Practice by Arnaud Doucet,Nando de Freitas,Neil Gordon Pdf
Monte Carlo methods are revolutionizing the on-line analysis of data in many fileds. They have made it possible to solve numerically many complex, non-standard problems that were previously intractable. This book presents the first comprehensive treatment of these techniques.