The Physical Properties Of Thin Metal Films Book in PDF, ePub and Kindle version is available to download in english. Read online anytime anywhere directly from your device. Click on the download button below to get a free pdf file of The Physical Properties Of Thin Metal Films book. This book definitely worth reading, it is an incredibly well-written.
The Physical Properties of Thin Metal Films by G.P. Zhigal'skii,Brian K. Jones Pdf
Thin films of conducting materials, such as metals, alloys and semiconductors are currently in use in many areas of science and technology, particularly in modern integrated circuit microelectronics that require high quality thin films for the manufacture of connection layers, resistors and ohmic contacts. These conducting films are also important for fundamental investigations in physics, radio-physics and physical chemistry. Physical Properties of Thin Metal Films provides a clear presentation of the complex physical properties particular to thin conducting films and includes the necessary theory, confirming experiments and applications. The volume will be an invaluable reference for graduates, engineers and scientists working in the electronics industry and fields of pure and applied science.
The Physical Properties of Thin Metal Films by G. P. Zhigal'skii,Brian K. Jones Pdf
Thin films of conducting materials, such as metals, alloys and semiconductors are currently in use in many areas of science and technology, particularly in modern integrated circuit microelectronics that require high quality thin films for the manufacture of connection layers, resistors and ohmic contacts. These conducting films are also important for fundamental investigations in physics, radio-physics and physical chemistry. Physical Properties of Thin Metal Films provides a clear presentation of the complex physical properties particular to thin conducting films and includes the necessary theory, confirming experiments and applications. The volume will be an invaluable reference for graduates, engineers and scientists working in the electronics industry and fields of pure and applied science.
Preparation and Properties of Thin Films by K. N. Tu,R. Rosenberg Pdf
Treatise on Materials Science and Technology, Volume 24: Preparation and Properties of Thin Films covers the progress made in the preparation of thin films and the corresponding study of their properties. The book discusses the preparation and property correlations in thin film; the variation of microstructure of thin films; and the molecular beam epitaxy of superlattices in thin film. The text also describes the epitaxial growth of silicon structures (thermal-, laser-, and electron-beam-induced); the characterization of grain boundaries in bicrystalline thin films; and the mechanical properties of thin films on substrates. The ion beam modification of thin film; the use of thin alloy films for metallization in microelectronic devices; and the fabrication and physical properties of ultrasmall structures are also encompassed. Materials scientists and materials engineers will find the book invaluable.
Ultrathin Metal Films by Matthias Wuttig,X. Liu Pdf
This research monograph discusses the close correlation between the magnetic and structural properties of thin films in the context of numerous examples of epitaxial metal films, while emphasis is laid on the stabilization of novel structures compared to the bulk material. Further options, possibilities, and limits for applications are given. Techniques for the characterization of thin films are addressed as well.
Handbook of Thin Films, Five-Volume Set by Hari Singh Nalwa Pdf
This five-volume handbook focuses on processing techniques, characterization methods, and physical properties of thin films (thin layers of insulating, conducting, or semiconductor material). The editor has composed five separate, thematic volumes on thin films of metals, semimetals, glasses, ceramics, alloys, organics, diamonds, graphites, porous materials, noncrystalline solids, supramolecules, polymers, copolymers, biopolymers, composites, blends, activated carbons, intermetallics, chalcogenides, dyes, pigments, nanostructured materials, biomaterials, inorganic/polymer composites, organoceramics, metallocenes, disordered systems, liquid crystals, quasicrystals, and layered structures. Thin films is a field of the utmost importance in today's materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, digital camcorders, sensitive broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are but a few examples of miniaturized device technologies that depend the utilization of thin film materials. The Handbook of Thin Films Materials is a comprehensive reference focusing on processing techniques, characterization methods, and physical properties of these thin film materials.
Thin Films by Chemical Vapour Deposition by C.E. Morosanu Pdf
The explosive growth in the semiconductor industry has caused a rapid evolution of thin film materials that lend themselves to the fabrication of state-of-the-art semiconductor devices. Early in the 1960s an old research technique named chemical vapour phase deposition (CVD), which has several unique advantages, developed into the most widely used technique for thin film preparation in electronics technology. In the last 25 years, tremendous advances have been made in the science and technology of thin films prepared by means of CVD. This book presents in a single volume, an up-to-date overview of the important field of CVD processes which has never been completely reviewed previously. Contents: Part I. 1. Evolution of CVD Films. Introductory remarks. Short history of CVD thin films. II. Fundamentals. 2. Techniques of Preparing Thin Films. Electrolytic deposition techniques. Vacuum deposition techniques. Plasma deposition techniques. Liquid-phase deposition techniques. Solid-phase deposition techniques. Chemical vapour conversion of substrate. Chemical vapour deposition. Comparison between CVD and other thin film deposition techniques. 3. Chemical Processes Used in CVD. Introduction. Description of chemical reactions used in CVD. 4. Thermodynamics of CVD. Feasibility of a CVD process. Techniques for equilibrium calculations in CVD systems. Examples of thermodynamic studies of CVD systems. 5. Kinetics of CVD. Steps and control type of a CVD heterogeneous reaction. Influence of experimental parameters on thin film deposition rate. Continuous measurement of the deposition rate. Experimental methods for studying CVD kinetics. Role of homogeneous reactions in CVD. Mechanism of CVD processes. Kinetics and mechanism of dopant incorporation. Transport phenomena in CVD. Status of kinetic and mechanism investigations in CVD systems. 6. Measurement of Thin Film Thickness. Mechanical methods. Mechanical-optical methods. Optical methods. Electrical methods. Miscellaneous methods. 7. Nucleation and Growth of CVD Films. Stages in the nucleation and growth mechanism. Regimes of nucleation and growth. Nucleation theory. Dependence of nucleation on deposition parameters. Heterogeneous nucleation and CVD film structural forms. Homogeneous nucleation. Experimental techniques. Experimental results of CVD film nucleation. 8. Thin Film Structure. Techniques for studying thin film structure. Structural defects in CVD thin films. 9. Analysis of CVD Films. Analysis techniques of thin film bulk. Analysis techniques of thin film surfaces. Film composition measurement. Depth concentration profiling. 10. Properties of CVD Films. Mechanical properties. Thermal properties. Optical properties. Photoelectric properties. Electrical properties. Magnetic properties. Chemical properties. Part III. 11. Equipment and Substrates. Equipment for CVD. Safety in CVD. Substrates. 12. Preparation and Properties of Semiconducting Thin Films. Homoepitaxial semiconducting films. Heteroepitaxial semiconducting films. 13. Preparation and Properties of Amorphous Insulating Thin Films. Oxides. Nitrides and Oxynitrides. Polymeric thin films. 14. Preparation and Properties of Conductive Thin Films. Metals and metal alloys. Resistor materials. Transparent conducting films. Miscellaneous materials. 15. Preparation and Properties of Superconducting and Magnetic Thin Films. Superconducting materials. Magnetic materials. 16. Uses of CVD Thin Films. Applications in electronics and microelectronics. Applications in the field of microwaves and optoelectronics. Miscellaneous applications. Artificial heterostructures (Quantum wells, superlattices, monolayers, two-dimensional electron gases). Part V. 17. Present and Future Importance of CVD Films.
Electrical Resistivity of Thin Metal Films by Peter Wissmann,Hans-Ulrich Finzel Pdf
The intent of this book is to report on the electrical, optical, and structural properties of silver and gold films in dependence on substrate material, annealing treatment, and gas adsorption. A main point is the calculation of the scattering cross section of the conduction electrons. All results are substantiated by extended experimental data, as well as numerous illustrations and tables.
Thin metal films on weakly-interacting substrates by Andreas Jamnig Pdf
Vapor-based growth of thin metal films with controlled morphology on weakly-interacting substrates (WIS), including oxides and van der Waals materials, is essential for the fabrication of multifunctional metal contacts in a wide array of optoelectronic devices. Achieving this entails a great challenge, since weak film/substrate interactions yield a pronounced and uncontrolled 3D morphology. Moreover, the far-from-equilibrium nature of vapor-based film growth often leads to generation of mechanical stress, which may further compromise device reliability and functionality. The objectives of this thesis are related to metal film growth on WIS and seek to: (i) contribute to the understanding of atomic-scale processes that control film morphological evolution; (ii) elucidate the dynamic competition between nanoscale processes that govern film stress generation and evolution; and (iii) develop methodologies for manipulating and controlling nanoscale film morphology between 2D and 3D. Investigations focus on magnetron sputter-deposited Ag and Cu films on SiO2 and amorphous carbon (a-C) substrates. Research is conducted by strategically combining of in situ and real-time film growth monitoring, ex situ chemical and (micro)-structural analysis, optical modelling, and deterministic growth simulations. In the first part, the scaling behavior of characteristic morphological transition thicknesses (i.e., percolation and continuous film formation thickness) during growth of Ag and Cu films on a-C are established as function of deposition rate and temperature. These data are interpreted using a theoretical framework based on the droplet growth theory and the kinetic freezing model for island coalescence, from which the diffusion rates of film forming species during Ag and Cu growth are estimated. By combining experimental data with ab initio molecular dynamics simulations, diffusion of multiatomic clusters, rather than monomers, is identified as the rate-limiting structure-forming process. In the second part, the effect of minority metallic or gaseous species (Cu, N2, O2) on Ag film morphological evolution on SiO2 is studied. By employing in situ spectroscopic ellipsometry, it is found that addition of minority species at the film growth front promotes 2D morphology, but also yields an increased continuous-layer resistivity. Ex situ analyses show that 2D morphology is favored because minority species hinder the rate of coalescence completion. Hence, a novel growth manipulation strategy is compiled in which minority species are deployed with high temporal precision to selectively target specific film growth stages and achieve 2D morphology, while retaining opto-electronic properties of pure Ag films. In the third part, the evolution of stress during Ag and Cu film growth on a-C and its dependence on growth kinetics (as determined by deposition rate, substrate temperature) is systematically investigated. A general trend toward smaller compressive stress magnitudes with increasing temperature/deposition rate is found, related to increasing grain size/decreasing adatom diffusion length. Exception to this trend is found for Cu films, in which oxygen incorporation from the residual growth atmosphere at low deposition rates inhibits adatom diffusivity and decreases the magnitude of compressive stress. The effect of N2 on stress type and magnitude in Ag films is also studied. While Ag grown in N2-free atmosphere exhibits a typical compressive-tensile-compressive stress evolution as function of thickness, addition of a few percent of N2 yields to a stress turnaround from compressive to tensile stress after film continuity which is attributed to giant grain growth and film roughening. The overall results of the thesis provide the foundation to: (i) determine diffusion rates over a wide range of WIS film/substrates systems; (ii) design non-invasive strategies for multifunctional contacts in optoelectronic devices; (iii) complete important missing pieces in the fundamental understanding of stress, which can be used to expand theoretical descriptions for predicting and tuning stress magnitude. La morphologie de films minces métalliques polycristallins élaborés par condensation d’une phase vapeur sur des substrats à faible interaction (SFI) possède un caractère 3D intrinsèque. De plus, la nature hors équilibre de la croissance du film depuis une phase vapeur conduit souvent à la génération de contraintes mécaniques, ce qui peut compromettre davantage la fiabilité et la fonctionnalité des dispositifs optoélectroniques. Les objectifs de cette thèse sont liés à la croissance de films métalliques sur SFI et visent à: (i) contribuer à une meilleure compréhension des processus à l'échelle atomique qui contrôlent l'évolution morphologique des films; (ii) élucider les processus dynamiques qui régissent la génération et l'évolution des contraintes en cours de croissance; et (iii) développer des méthodologies pour manipuler et contrôler la morphologie des films à l'échelle nanométrique. L’originalité de l’approche mise en œuvre consiste à suivre la croissance des films in situ et en temps réel par couplage de plusieurs diagnostics, complété par des analyses microstructurales ex situ. Les grandeurs mesurées sont confrontées à des modèles optiques et des simulations atomistiques. La première partie est consacrée à une étude de comportement d’échelonnement des épaisseurs de transition morphologiques caractéristiques, à savoir la percolation et la continuité du film, lors de la croissance de films polycristallins d'Ag et de Cu sur carbone amorphe (a-C). Ces grandeurs sont examinées de façon systématique en fonction de la vitesse de dépôt et de la température du substrat, et interprétées dans le cadre de la théorie de la croissance de gouttelettes suivant un modèle cinétique décrivant la coalescence d’îlots, à partir duquel les coefficients de diffusion des espèces métalliques sont estimés. En confrontant les données expérimentales à des simulations par dynamique moléculaire ab initio, la diffusion de clusters multiatomiques est identifiée comme l’étape limitante le processus de croissance. Dans la seconde partie, l’incorporation, et l’impact sur la morphologie, d’espèces métalliques ou gazeuses minoritaires (Cu, N2, O2) lors de la croissance de film Ag sur SiO2 est étudié. A partir de mesures ellipsométriques in situ, on constate que l'addition d'espèces minoritaires favorise une morphologie 2D, entravant le taux d'achèvement de la coalescence, mais donne également une résistivité accrue de la couche continue. Par conséquent, une stratégie de manipulation de la croissance est proposée dans laquelle des espèces minoritaires sont déployées avec une grande précision temporelle pour cibler sélectivement des stades de croissance de film spécifiques et obtenir une morphologie 2D, tout en conservant les propriétés optoélectroniques des films d’Ag pur. Dans la troisième partie, l'évolution des contraintes résiduelles lors de la croissance des films d'Ag et de Cu sur a-C et leur dépendance à la cinétique de croissance est systématiquement étudiée. On observe une tendance générale vers des amplitudes de contrainte de compression plus faibles avec une augmentation de la température/vitesse de dépôt, liée à l'augmentation de la taille des grains/à la diminution de la longueur de diffusion des adatomes. Également, l’ajout dans le plasma de N2 sur le type et l'amplitude des contraintes dans les films d'Ag est étudié. L'ajout de quelques pourcents de N2 en phase gaz donne lieu à un renversement de la contrainte de compression et une évolution en tension au-delà de la continuité du film. Cet effet est attribué à une croissance anormale des grains géants et le développement de rugosité de surface. L’ensemble des résultats obtenus dans cette thèse fournissent les bases pour: (i) déterminer les coefficients de diffusion sur une large gamme de systèmes films/SFI; (ii) concevoir des stratégies non invasives pour les contacts multifonctionnels dans les dispositifs optoélectroniques; (iii) apporter des éléments de compréhension à l’origine du développement de contrainte, qui permettent de prédire et contrôler le niveau de contrainte intrinsèque à la croissance de films minces polycristallins.
Evolution of Thin Film Morphology by Matthew Pelliccione,Toh-Ming Lu Pdf
The focus of this book is on modeling and simulations used in research on the morphological evolution during film growth. The authors emphasize the detailed mathematical formulation of the problem. The book will enable readers themselves to set up a computational program to investigate specific topics of interest in thin film deposition. It will benefit those working in any discipline that requires an understanding of thin film growth processes.
Recent Advances in Science and Technology of Materials by Adlai Bishay Pdf
If an ion in a crystal is replaced by an impurity ion with a different charge, compensation for the charge difference must be accomplished. This is usually done by an intrinsic defect, i. e. a lattice vacancy or interstitial host ion, in such a way to balance the excess or deficit of charge. The introduction of cation vacan cies along with divalent cation impurities in alkali halides is a familiar example. If these crystals are carefully annealed, nearly all of the compensating defects migrate to the impurity ions to form impurity-defect complexes. It is the behavior of these complexes that are the principal concern in this paper. Almost invariably such complexes are dipolar in character, and when subjected to an electric or mechanical stress field, they will tend to realign to an orienta tion of lower energy provided the thermal activation is sufficiently great. If the complex consists of an impurity-vacancy couple, re orientation may occur either by the vacancy moving around the impu rity or by an exchange of positions of the partners. In general the activation energy for these two distinct reorientation paths is different. If the complex consists of an impurity-interstitial couple, interchange of positions is unlikely and reorientation is considered to occur exclusively by the motion of the interstitial around the vacancy.
