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Author : B. R. Nag
Publisher : Pergamon
Page : 248 pages
File Size : 40,8 Mb
Release : 1972
Category : Science
ISBN : STANFORD:36105030536283
Author : Eckehard Schöll
Publisher : Springer Science & Business Media
Page : 418 pages
File Size : 41,6 Mb
Release : 1997-12-31
Category : Technology & Engineering
ISBN : 0412731002
Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.
Author : Carlo Jacoboni
Publisher : Springer Science & Business Media
Page : 590 pages
File Size : 54,6 Mb
Release : 2010-09-05
Category : Science
ISBN : 9783642105869
This book originated out of a desire to provide students with an instrument which might lead them from knowledge of elementary classical and quantum physics to moderntheoreticaltechniques for the analysisof electrontransport in semiconductors. The book is basically a textbook for students of physics, material science, and electronics. Rather than a monograph on detailed advanced research in a speci?c area, it intends to introduce the reader to the fascinating ?eld of electron dynamics in semiconductors, a ?eld that, through its applications to electronics, greatly contributed to the transformationof all our lives in the second half of the twentieth century, and continues to provide surprises and new challenges. The ?eld is so extensive that it has been necessary to leave aside many subjects, while others could be dealt with only in terms of their basic principles. The book is divided into ?ve major parts. Part I moves from a survey of the fundamentals of classical and quantum physics to a brief review of basic semiconductor physics. Its purpose is to establish a common platform of language and symbols, and to make the entire treatment, as far as pos- ble, self-contained. Parts II and III, respectively, develop transport theory in bulk semiconductors in semiclassical and quantum frames. Part IV is devoted to semiconductor structures, including devices and mesoscopic coherent s- tems. Finally, Part V develops the basic theoretical tools of transport theory within the modern nonequilibrium Green-function formulation, starting from an introduction to second-quantization formalism.
Author : Eckehard Schöll
Publisher : Springer Science & Business Media
Page : 394 pages
File Size : 45,9 Mb
Release : 2013-11-27
Category : Technology & Engineering
ISBN : 9781461558071
Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.
Author : B. M. Askerov
Publisher : World Scientific
Page : 416 pages
File Size : 55,8 Mb
Release : 1994
Category : Technology & Engineering
ISBN : 9810212836
This book contains the first systematic and detailed exposition of the linear theory of the stationary electron transport phenomena in semiconductors. Arbitrary isotropic and anisotropic nonparabolic bands as well as p-Ge-type bands are considered. Phonon drag effect are taken account of in an arbitrary nonquantizing magnetic field. Scattering theory is discussed in detail with account taken of the Bloch wave functions effect. Transport phenomena in the quantizing magnetic field are studied as well as the size effects in thin films. Band structures of the semiconductors and semiconductor compounds of interest are also considered.The main part of the book deals with the three important problems: charge carrier statistics in a semiconductor, classical and quantum theory of the electron transport phenomena. All the theoretical results considered as well as the validity conditions are presented in the form which may be directly used to interpret experimental data.
Author : Massimo V. Fischetti,William G. Vandenberghe
Publisher : Springer
Page : 474 pages
File Size : 52,5 Mb
Release : 2016-05-20
Category : Technology & Engineering
ISBN : 9783319011011
This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.
Author : M. I. Klinger
Publisher : Elsevier
Page : 950 pages
File Size : 53,7 Mb
Release : 2017-05-04
Category : Science
ISBN : 9781483158198
Problems of Linear Electron (Polaron) Transport Theory in Semiconductors summarizes and discusses the development of areas in electron transport theory in semiconductors, with emphasis on the fundamental aspects of the theory and the essential physical nature of the transport processes. The book is organized into three parts. Part I focuses on some general topics in the theory of transport phenomena: the general dynamical theory of linear transport in dissipative systems (Kubo formulae) and the phenomenological theory. Part II deals with the theory of polaron transport in a crystalline semiconductor. The last part contains a critical account of electron transport in disordered systems, including amorphous substances, with allowance for polaron effects.
Author : Chin Sen Ting
Publisher : World Scientific
Page : 336 pages
File Size : 53,8 Mb
Release : 1992
Category : Science
ISBN : 9810210086
This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.
Author : Julian Goldsmid
Publisher : Morgan & Claypool Publishers
Page : 131 pages
File Size : 54,5 Mb
Release : 2017-05-02
Category : Science
ISBN : 9781681746425
This book outlines the principles of thermoelectric generation and refrigeration from the discovery of the Seebeck and Peltier effects in the nineteenth century through the introduction of semiconductor thermoelements in the mid-twentieth century to the more recent development of nanostructured materials. It is shown that the efficiency of a thermoelectric generator and the coefficient of performance of a thermoelectric refrigerator can be related to a quantity known as the figure of merit. The figure of merit depends on the Seebeck coefficient and the ratio of the electrical to thermal conductivity. It is shown that expressions for these parameters can be derived from the band theory of solids. The conditions for favourable electronic properties are discussed. The methods for selecting materials with a low lattice thermal conductivity are outlined and the ways in which the scattering of phonons can be enhanced are described. The application of these principles is demonstrated for specific materials including the bismuth telluride alloys, bismuth antimony, alloys based on lead telluride, silicon-germanium and materials described as phonon-glass electron-crystals. It is shown that there can be advantages in using the less familiar transverse thermoelectric effects and the transverse thermomagnetic effects. Finally, practical aspects of thermoelectric generation and refrigeration are discussed. The book is aimed at readers who do not have a specialised knowledge of solid state physics.
Author : B.R. Nag
Publisher : Springer Science & Business Media
Page : 476 pages
File Size : 52,9 Mb
Release : 2012-12-06
Category : Science
ISBN : 9783642814167
Discovery of new transport phenomena and invention of electron devices through exploitation of these phenomena have caused a great deal of interest in the properties of compound semiconductors in recent years. Extensive re search has been devoted to the accumulation of experimental results, par ticularly about the artificially synthesised compounds. Significant ad vances have also been made in the improvement of the related theory so that the values of the various transport coefficients may be calculated with suf ficient accuracy by taking into account all the complexities of energy band structure and electron scattering mechanisms. Knowledge about these deve lopments may, however, be gathered only from original research contributions, scattered in scientific journals and conference proceedings. Review articles have been published from time to time, but they deal with one particular material or a particular phenomenon and are written at an advanced level. Available text books on semiconductor physics, do not cover the subject in any detail since many of them were written decades ago. There is, there fore, a definite need for a book, giving a comprehensive account of electron transport in compound semiconductors and covering the introductory material as well as the current work. The present book is an attempt to fill this gap in the literature. The first chapter briefly reviews the history of the developement of compound semiconductors and their applications. It is also an introduction to the contents of the book.
Author : David K. Ferry,John Robert Barker,C. Jacobini
Publisher : Springer Science & Business Media
Page : 620 pages
File Size : 52,6 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9781468436389
The area of high field transport in semiconductors has been of interest since the early studies of dielectric breakdown in various materials. It really emerged as a sub-discipline of semiconductor physics in the early 1960's, following the discovery of substantial deviations from Ohm's law at high electric fields. Since that time, it has become a major area of importance in solid state electronics as semiconductor devices have operated at higher frequencies and higher powers. It has become apparent since the Modena Conference on Hot Electrons in 1973, that the area of hot electrons has ex tended weIl beyond the concept of semi-classical electrons (or holes) in homogeneous semiconductor materials. This was exemplified by the broad range of papers presented at the International Conference on Hot Electrons in Semiconductors, held in Denton, Texas, in 1977. Hot electron physics has progressed from a limited phenomeno logical science to a full-fledged experimental and precision theo retical science. The conceptual base and subsequent applications have been widened and underpinned by the development of ab initio nonlinear quantum transport theory which complements and identifies the limitations of the traditional semi-classical Boltzmann-Bloch picture. Such diverse areas as large polarons, pico-second laser excitation, quantum magneto-transport, sub-three dimensional systems, and of course device dynamics all have been shown to be strongly interactive with more classical hot electron pictures.
Author : Kevin F. Brennan,P. Paul Ruden
Publisher : World Scientific
Page : 270 pages
File Size : 51,5 Mb
Release : 2001
Category : Technology & Engineering
ISBN : 9789812799920
This book examines some of the charge carrier transport issues encountered in the field of modern semiconductor devices and novel materials. Theoretical approaches to the understanding and modeling of the relevant physical phenomena, seen in devices that have very small spatial dimensions and that operate under high electric field strength, are described in papers written by leading experts and pioneers in this field. In addition, the book examines the transport physics encountered in novel materials such as wide band gap semiconductors (GaN, SiC, etc.) as well as organic semiconductors. Topics in High Field Transport in Semiconductors provides a comprehensive overview that will be beneficial to newcomers as well as engineers and researchers engaged in this exciting field. Contents: Foreword (K F Brennan & P P Ruden); Quantum Transport in Semiconductor Devices (D K Ferry et al.); Quantum Transport and Its Simulation with the Wigner-Function Approach (C Jacoboni et al.); Bloch Dynamics in Spatially Local Inhomogeneous Electric Fields (J P Reynolds et al.); Collision Broadening Through Sequences of Scattering Events: Theory, Consequences and Modeling Within Semiclassical Monte Carlo (L F Register & B Fisher); Transport in a Polarization-Induced 2D Electron Gas (B K Ridley & N A Zakhleniuk); Impact Ionization and High Field Effects in Wide Band Gap Semiconductors (M Reigrotzki et al.); Simulation of Carrier Transport in Wide Band Gap Semiconductors (E Bellotti et al.); Electrical Transport in Organic Semiconductors (I H Campbell & D L Smith). Readership: Researchers and graduate students in the field of semiconductors.
Author : Wilfried Schäfer,Martin Wegener
Publisher : Springer Science & Business Media
Page : 498 pages
File Size : 45,5 Mb
Release : 2013-06-29
Category : Science
ISBN : 9783662046630
Well-balanced and up-to-date introduction to the field of semiconductor optics, including transport phenomena in semiconductors. Starting with the theoretical fundamentals of this field the book develops, assuming a basic knowledge of solid-state physics. The application areas of the theory covered include semiconductor lasers, detectors, electro-optic modulators, single-electron transistors, microcavities and double-barrier resonant tunneling diodes. One hundred problems with hints for solution help the readers to deepen their knowledge.
Author : Marius Grundmann
Publisher : Springer Nature
Page : 905 pages
File Size : 46,9 Mb
Release : 2021-03-06
Category : Technology & Engineering
ISBN : 9783030515690
The 4th edition of this highly successful textbook features copious material for a complete upper-level undergraduate or graduate course, guiding readers to the point where they can choose a specialized topic and begin supervised research. The textbook provides an integrated approach beginning from the essential principles of solid-state and semiconductor physics to their use in various classic and modern semiconductor devices for applications in electronics and photonics. The text highlights many practical aspects of semiconductors: alloys, strain, heterostructures, nanostructures, amorphous semiconductors, and noise, which are essential aspects of modern semiconductor research but often omitted in other textbooks. This textbook also covers advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, and transparent conductive oxides. The 4th edition includes many updates and chapters on 2D materials and aspects of topology. The text derives explicit formulas for many results to facilitate a better understanding of the topics. Having evolved from a highly regarded two-semester course on the topic, The Physics of Semiconductors requires little or no prior knowledge of solid-state physics. More than 2100 references guide the reader to historic and current literature including original papers, review articles and topical books, providing a go-to point of reference for experienced researchers as well.
Author : El-Saba, Muhammad
Publisher : IGI Global
Page : 677 pages
File Size : 49,9 Mb
Release : 2017-03-31
Category : Technology & Engineering
ISBN : 9781522523130
Rapid developments in technology have led to enhanced electronic systems and applications. When utilized correctly, these can have significant impacts on communication and computer systems. Transport of Information-Carriers in Semiconductors and Nanodevices is an innovative source of academic material on transport modelling in semiconductor material and nanoscale devices. Including a range of perspectives on relevant topics such as charge carriers, semiclassical transport theory, and organic semiconductors, this is an ideal publication for engineers, researchers, academics, professionals, and practitioners interested in emerging developments on transport equations that govern information carriers.