Thin Film Growth Techniques For Low Dimensional Structures

Author : R.F.C. Farrow,S.S.P. Parkin,P.J. Dobson,J.H. Neave,A.S. Arrott
Publisher : Springer Science & Business Media
Page : 548 pages
File Size : 53,9 Mb
Release : 2013-03-09
Category : Technology & Engineering
ISBN : 9781468491456

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Thin Film Growth Techniques for Low-Dimensional Structures by R.F.C. Farrow,S.S.P. Parkin,P.J. Dobson,J.H. Neave,A.S. Arrott Pdf

This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.

Author : R. F. C. Farrow,S. S. P. Parkin,P. J. Dobson
Publisher : Unknown
Page : 564 pages
File Size : 53,8 Mb
Release : 2014-01-15
Category : Electronic
ISBN : 1468491466

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Thin Film Growth Techniques for Low-Dimensional Structures by R. F. C. Farrow,S. S. P. Parkin,P. J. Dobson Pdf

Author : R.F.C. Farrow,S.S.P. Parkin,P.J. Dobson,J.H. Neave,A.S. Arrott
Publisher : Springer
Page : 552 pages
File Size : 49,9 Mb
Release : 2012-12-28
Category : Technology & Engineering
ISBN : 1468491474

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Thin Film Growth Techniques for Low-Dimensional Structures by R.F.C. Farrow,S.S.P. Parkin,P.J. Dobson,J.H. Neave,A.S. Arrott Pdf

This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.

Author : R.F.C. Farrow,S.S.P. Parkin,P.J. Dobson,J.H. Neave,A.S. Arrott
Publisher : Springer
Page : 0 pages
File Size : 50,5 Mb
Release : 1987-12-01
Category : Technology & Engineering
ISBN : 0306426862

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Thin Film Growth Techniques for Low-Dimensional Structures by R.F.C. Farrow,S.S.P. Parkin,P.J. Dobson,J.H. Neave,A.S. Arrott Pdf

This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.

Author : M. Balkanski
Publisher : Springer Science & Business Media
Page : 417 pages
File Size : 45,8 Mb
Release : 2012-12-06
Category : Science
ISBN : 9789400902893

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Devices Based on Low-Dimensional Semiconductor Structures by M. Balkanski Pdf

Low-dimensional semiconductor quantum structures are a major, high-technological development that has a considerable industrial potential. The field is developing extremely rapidly and the present book represents a timely guide to the latest developments in device technology, fundamental properties, and some remarkable applications. The content is largely tutorial, and the book could be used as a textbook. The book deals with the physics, fabrication, characteristics and performance of devices based on low-dimensional semiconductor structures. It opens with fabrication procedures. The fundamentals of quantum structures and electro-optical devices are dealt with extensively. Nonlinear optical devices are discussed from the point of view of physics and applications of exciton saturation in MQW structures. Waveguide-based devices are also described in terms of linear and nonlinear coupling. The basics of pseudomorphic HEMT technology, device physics and materials layer design are presented. Each aspect is reviewed from the elementary basics up to the latest developments. Audience: Undergraduates in electrical engineering, graduates in physics and engineering schools. Useful for active scientists and engineers wishing to update their knowledge and understanding of recent developments.

Author : T.C. McGill,C.M. Sotomayor Torres,W. Gebhardt
Publisher : Springer Science & Business Media
Page : 338 pages
File Size : 49,6 Mb
Release : 2012-12-06
Category : Science
ISBN : 9781468456615

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Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors by T.C. McGill,C.M. Sotomayor Torres,W. Gebhardt Pdf

This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized.

Author : Tom Kuech
Publisher : Elsevier
Page : 1382 pages
File Size : 41,7 Mb
Release : 2014-11-02
Category : Science
ISBN : 9780444633057

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Handbook of Crystal Growth by Tom Kuech Pdf

Volume IIIA Basic Techniques Handbook of Crystal Growth, 2nd Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures. Volume IIIB Materials, Processes, and Technology Handbook of Crystal Growth, 2nd Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials. Volume IIIA Basic Techniques Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology Describes atomic level epitaxial deposition and other low temperature growth techniques Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials

Author : Robert M. Metzger,Peter R. Day,George C. Papavassiliou
Publisher : Springer Science & Business Media
Page : 729 pages
File Size : 47,6 Mb
Release : 2013-11-11
Category : Science
ISBN : 9781489920881

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Lower-Dimensional Systems and Molecular Electronics by Robert M. Metzger,Peter R. Day,George C. Papavassiliou Pdf

This volume represents the written account of the NATO Advanced Study Institute "Lower-Dimensional Systems and Molecular Electronics" held at Hotel Spetses, Spetses Island, Greece from 12 June to 23 June 1989. The goal of the Institute was to demonstrate the breadth of chemical and physical knowledge that has been acquired in the last 20 years in inorganic and organic crystals, polymers, and thin films, which exhibit phenomena of reduced dimensionality. The interest in these systems started in the late 1960's with lower-dimensional inorganic conductors, in the early 1970's with quasi-one-dimensional crystalline organic conductors. which by 1979 led to the first organic superconductors, and, in 1977, to the fITSt conducting polymers. The study of monolayer films (Langmuir-Blodgett films) had progressed since the 1930's, but reached a great upsurge in . the early 1980's. The pursuit of non-linear optical phenomena became increasingly popular in the early 1980's, as the attention turned from inorganic crystals to organic films and polymers. And in the last few years the term "moleculw' electronics" has gained ever-increasing acceptance, although it is used in several contexts. We now have organic superconductors with critical temperatures in excess of 10 K, conducting polymers that are soluble and processable, and used commercially; we have films of a few monolayers that have high in-plane electrical conductivity, and polymers that show great promise in photonics; we even have a few devices that function almost at the molecular level.

Author : Hartmut Haug,L. Banyai
Publisher : Springer Science & Business Media
Page : 374 pages
File Size : 42,7 Mb
Release : 2012-12-06
Category : Science
ISBN : 9781468472783

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Optical Switching in Low-Dimensional Systems by Hartmut Haug,L. Banyai Pdf

This book contains all the papers presented at the NATO workshop on "Optical Switching in Low Dimensional Systems" held in Marbella, Spain from October 6th to 8th, 1988. Optical switching is a basic function for optical data processing, which is of technological interest because of its potential parallelism and its potential speed. Semiconductors which exhibit resonance enhanced optical nonlinearities in the frequency range close to the band edge are the most intensively studied materials for optical bistability and fast gate operation. Modern crystal growth techniques, particularly molecular beam epitaxy, allow the manufacture of semiconductor microstructures such as quantum wells, quantum wires and quantum dots in which the electrons are only free to move in two, one or zero dimensions, of the optically excited electron-hole pairs in these low respectively. The spatial confinement dimensional structures gives rise to an enhancement of the excitonic nonlinearities. Furthermore, the variations of the microstruture extensions, of the compositions, and of the doping offer great new flexibility in engineering the desired optical properties. Recently, organic chain molecules (such as polydiacetilene) which are different realizations of one dimensional electronic systems, have been shown also to have interesting optical nonlinearities. Both the development and study of optical and electro-optical devices, as well as experimental and theoretical investigations of the underlying optical nonlinearities, are contained in this book.

Author : Ugo Valdre
Publisher : Springer Science & Business Media
Page : 321 pages
File Size : 47,7 Mb
Release : 2013-03-09
Category : Science
ISBN : 9781461595373

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Surface and Interface Characterization by Electron Optical Methods by Ugo Valdre Pdf

The importance of real space imaging and spatially-resolved spectroscopy in many of the most significant problems of surface and interface behaviour is almost self evident. To join the expertise of the tradi tional surface scientist with that of the electron microscopist has however been a slow and difficult process. In the past few years remarkable progress has been achieved, including the development of new techniques of scanning transmission and reflection imaging as well as low energy microscopy, all carried out in greatly improved vacuum conditions. Most astonishing of all has been the advent of the scanning tunneling electron microscope providing atomic resolution in a manner readily compatible with most surface science diagnostic procedures. The problem of beam damage, though often serious, is increasingly well understood so that we can assess the reliability and usefulness of the results which can now be obtained in catalysis studies and a wide range of surface science applications. These new developments and many others in more established surface techniques are all described in this book, based on lectures given at a NATO Advanced Study Institute held in Erice, Sicily, at Easter 1987. It is regretted that a few lectures on low energy electron diffraction and channeling effects could not be included. Fifteen lecturers from seven different Countries and 67 students from 23 Countries and a wide variety of backgrounds attended the school.

Author : A. Stella,L. Miglio
Publisher : Elsevier
Page : 496 pages
File Size : 50,8 Mb
Release : 2013-10-22
Category : Science
ISBN : 9781483290362

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Semiconductor Superlattices and Interfaces by A. Stella,L. Miglio Pdf

This book is concerned with the dynamic field of semiconductor microstructures and interfaces. Several topics in the fundamental properties of interfaces, superlattices and quantum wells are included, as are papers on growth techniques and applications. The papers deal with the interaction of theory, experiments and applications within the field, and the outstanding contributions are from both the academic and industrial worlds.

Author : Pierre Delhaes,Marc Drillon
Publisher : Springer Science & Business Media
Page : 488 pages
File Size : 48,5 Mb
Release : 2013-12-01
Category : Science
ISBN : 9781489920911

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Organic and Inorganic Low-Dimensional Crystalline Materials by Pierre Delhaes,Marc Drillon Pdf

The research of unitary concepts in solid state and molecular chemistry is of current interest for both chemist and physicist communities. It is clear that due to their relative simplicity, low dimensional materials have attracted most of the attention. Thus, many non-trivial problems were solved in chain systems, giving some insight into the behavior of real systems which would otherwise be untractable. The NATO Advanced Research Workshop on "Organic and Inorganic Low-Dimensional Crystalline Materials" was organized to review the most striking electronic properties exhibited by organic and inorganic sytems whose space dimensionality ranges from zero (Od) to one (1d), and to discuss related scientific and technological potentials. The initial objectives of this Workshop were, respectively: i) To research unitary concepts in solid state physics, in particular for one dimensional compounds, ii) To reinforce, through a close coupling between theory and experiment, the interplay between organic and inorganic chemistry, on the one hand, and solid state physics on the other, iii) To get a salient understanding of new low-dimensional materials showing "exotic" physical properties, in conjunction with structural features.

Author : Clivia M. Sotomayor Torres,J.C. Portal,J.C. Maan,R.A. Stradling
Publisher : Springer Science & Business Media
Page : 357 pages
File Size : 48,9 Mb
Release : 2012-12-06
Category : Science
ISBN : 9781461318798

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Optical Properties of Narrow-Gap Low-Dimensional Structures by Clivia M. Sotomayor Torres,J.C. Portal,J.C. Maan,R.A. Stradling Pdf

This volume contains the Proceedings of the NATO Advanced Research Workshop on "Optical Properties of Narrow-Gap Low-Dimensional Structures", held from July 29th to August 1st, 1986, in St. Andrews, Scotland, under the auspices of the NATO International Scientific Exchange Program. The workshop was not limited to optical properties of narrow-gap semiconductor structures (Part III). Sessions on, for example, the growth methods and characterization of III-V, II-VI, and IV-VI materials, discussed in Part II, were an integral part of the workshop. Considering the small masses of the carriers in narrow-gap low dimensional structures (LOS), in Part I the enhanced band mixing and magnetic field effects are explored in the context of the envelope function approximation. Optical nonlinearities and energy relaxation phenomena applied to the well-known systems of HgCdTe and GaAs/GaAIAs, respectively, are reviewed with comments on their extension to narrow gap LOS. The relevance of optical observations in quantum transport studies is illustrated in Part IV. A review of devices based on epitaxial narrow-gap materials defines a frame of reference for future ones based on two-dimensional narrow-gap semiconductors; in addition, an analysis of the physics of quantum well lasers provides a guide to relevant parameters for narrow-gap laser devices for the infrared (Part V). The roles and potentials of special techniques are explored in Part VI, with emphasis on hydrostatic pressure techniques, since this has a pronounced effect in small-mass, narrow-gap, non-parabolic structures.

Author : M. O. Manasreh
Publisher : CRC Press
Page : 606 pages
File Size : 42,9 Mb
Release : 1997-12-23
Category : Science
ISBN : 9056995677

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Strained-Layer Quantum Wells and Their Applications by M. O. Manasreh Pdf

Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. This volume focuses on the physics, technology and applications of strained layer quantum wells and superlattices, featuring chapters on aspects ranging from theoretical modeling of quantum-well lasers to materials characterization and assessment by the most prominent researchers in the field. It is an essential reference for both researchers and students of semiconductor lasers, sensors and communications.

Author : D.J. Lockwood,Jeff F. Young
Publisher : Springer
Page : 592 pages
File Size : 46,5 Mb
Release : 2013-12-20
Category : Science
ISBN : 9781489936950

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Light Scattering in Semiconductor Structures and Superlattices by D.J. Lockwood,Jeff F. Young Pdf

Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained. In November 1964, Hobden and Russell reported the Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings were held in 1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and apart from the multidisciplinary biennial International Conference on Raman Spectroscopy there has been no special forum for experts in light scattering spectroscopy of semiconductors to meet and discuss latest developments. Meanwhile, technological advances in semiconductor growth have given rise to a veritable renaissance in the field of semiconductor physics. Light scattering spectroscopy has played a crucial role in the advancement of this field, providing valuable information about the electronic, vibrational and structural properties both of the host materials, and of heterogeneous composite structures. On entering a new decade, one in which technological advances in lithography promise to open even broader horirons for semiconductor physics, it seemed to us to be an ideal time to reflect on the achievements of the past decade, to be brought up to date on the current state-of-the-art, and to catch some glimpses of where the field might be headed in the 1990s.