Understanding Modern Transistors And Diodes

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Understanding Modern Transistors and Diodes

Author : David L. Pulfrey
Publisher : Cambridge University Press
Page : 355 pages
File Size : 48,7 Mb
Release : 2010-01-28
Category : Technology & Engineering
ISBN : 9781139484671

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Understanding Modern Transistors and Diodes by David L. Pulfrey Pdf

Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject. Key features: • Rigorous theoretical treatment combined with practical detail • A theoretical framework built up systematically from the Schrödinger Wave Equation and the Boltzmann Transport Equation • Covers MOSFETS, HBTs and HJFETS • Uses the PSP model for MOSFETS • Rigorous treatment of device capacitance • Describes the operation of modern, high-performance transistors and diodes • Evaluates the suitability of various transistor types and diodes for specific modern applications • Covers solar cells and LEDs and their potential impact on energy generation and reduction • Includes a chapter on nanotransistors to prepare students and professionals for the future • Provides results of detailed numerical simulations to compare with analytical solutions • End-of-chapter exercises • Online lecture slides for undergraduate and graduate courses

Understanding Mod Transistors and Diodes

Author : Anonim
Publisher : Unknown
Page : 128 pages
File Size : 52,7 Mb
Release : 2010
Category : Electronic
ISBN : OCLC:741249936

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Understanding Mod Transistors and Diodes by Anonim Pdf

Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject. Key features: Rigorous theoretical treatment combined with practical detail; A theoretical framework built up systematically from the Schrodinger Wave Equation and the Boltzmann Transport Equation; Covers MOSFETS, HBTs and HJFETS; Uses the PSP model for MOSFETS; Rigorous treatment of device capacitance; Describes the operation of modern, high-performance transistors and diodes; Evaluates the suitability of various transistor types and diodes for specific modern applications, Covers solar cells and LEDs and their potential impact on energy generation and reduction; Includes a chapter on nanotransistors to prepare students and professionals for the future; Provides results of detailed numerical simulations to compare with analytical solutions; End-of-chapter exercises; Online lecture slides for undergraduate and graduate courses.

Handbook for III-V High Electron Mobility Transistor Technologies

Author : D. Nirmal,J. Ajayan
Publisher : CRC Press
Page : 446 pages
File Size : 47,9 Mb
Release : 2019-05-14
Category : Science
ISBN : 9780429862526

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Handbook for III-V High Electron Mobility Transistor Technologies by D. Nirmal,J. Ajayan Pdf

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Proceedings of the 1st International Conference on Electronic Engineering and Renewable Energy

Author : Bekkay Hajji,Giuseppe Marco Tina,Kamal Ghoumid,Abdelhamid Rabhi,Adel Mellit
Publisher : Springer
Page : 786 pages
File Size : 52,5 Mb
Release : 2018-08-01
Category : Technology & Engineering
ISBN : 9789811314056

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Proceedings of the 1st International Conference on Electronic Engineering and Renewable Energy by Bekkay Hajji,Giuseppe Marco Tina,Kamal Ghoumid,Abdelhamid Rabhi,Adel Mellit Pdf

The proceedings present a selection of refereed papers presented at the 1st International Conference on Electronic Engineering and Renewable Energy (ICEERE 2018) held during 15-17 April 2018, Saidi, Morocco. The contributions from electrical engineers and experts highlight key issues and developments essential to the multifaceted field of electrical engineering systems and seek to address multidisciplinary challenges in Information and Communication Technologies. The book has a special focus on energy challenges for developing the Euro-Mediterranean regions through new renewable energy technologies in the agricultural and rural areas. The book is intended for academia, including graduate students, experienced researchers and industrial practitioners working in the fields of Electronic Engineering and Renewable Energy.

Semiconductor Devices

Author : Amal Banerjee
Publisher : Springer Nature
Page : 305 pages
File Size : 42,6 Mb
Release : 2023-10-16
Category : Technology & Engineering
ISBN : 9783031457500

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Semiconductor Devices by Amal Banerjee Pdf

This book examines in detail how a semiconductor device is designed and fabricated to satisfy best the requirements of the target application. The author presents and explains both basic and state-of-art semiconductor industry standards used in large/small signal equivalent circuit models for semiconductor devices that electronics engineers routinely use in their design calculations. The presentation includes detailed, step-by-step information on how a semiconductor device is fabricated, and the very sophisticated supporting technologies used in the process flow. The author also explains how standard laboratory equipment can be used to extract useful performance metrics of a semiconductor device.

Recent Advances in Electrical Engineering and Control Applications

Author : Mohammed Chadli,Sofiane Bououden,Ivan Zelinka
Publisher : Springer
Page : 418 pages
File Size : 50,7 Mb
Release : 2016-12-01
Category : Technology & Engineering
ISBN : 9783319489292

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Recent Advances in Electrical Engineering and Control Applications by Mohammed Chadli,Sofiane Bououden,Ivan Zelinka Pdf

This book of proceedings includes papers presenting the state of art in electrical engineering and control theory as well as their applications. The topics focus on classical as well as modern methods for modeling, control, identification and simulation of complex systems with applications in science and engineering. The papers were selected from the hottest topic areas, such as control and systems engineering, renewable energy, faults diagnosis—faults tolerant control, large-scale systems, fractional order systems, unconventional algorithms in control engineering, signals and communications. The control and design of complex systems dynamics, analysis and modeling of its behavior and structure is vitally important in engineering, economics and in science generally science today. Examples of such systems can be seen in the world around us and are a part of our everyday life. Application of modern methods for control, electronics, signal processing and more can be found in our mobile phones, car engines, home devices like washing machines is as well as in such advanced devices as space probes and systems for communicating with them. All these technologies are part of technological backbone of our civilization, making further research and hi-tech applications essential. The rich variety of contributions appeals to a wide audience, including researchers, students and academics.

Concepts, Strategies and Models to Enhance Physics Teaching and Learning

Author : Eilish McLoughlin,Paul van Kampen
Publisher : Springer
Page : 238 pages
File Size : 54,8 Mb
Release : 2019-07-24
Category : Science
ISBN : 9783030181376

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Concepts, Strategies and Models to Enhance Physics Teaching and Learning by Eilish McLoughlin,Paul van Kampen Pdf

This book discusses novel research on and practices in the field of physics teaching and learning. It gathers selected high-quality studies that were presented at the GIREP-ICPE-EPEC 2017 conference, which was jointly organised by the International Research Group on Physics Teaching (GIREP); European Physical Society – Physics Education Division, and the Physics Education Commission of the International Union of Pure and Applied Physics (IUPAP). The respective chapters address a wide variety of topics and approaches, pursued in various contexts and settings, all of which represent valuable contributions to the field of physics education research. Examples include the design of curricula and strategies to develop student competencies—including knowledge, skills, attitudes and values; workshop approaches to teacher education; and pedagogical strategies used to engage and motivate students. This book shares essential insights into current research on physics education and will be of interest to physics teachers, teacher educators and physics education researchers around the world who are working to combine research and practice in physics teaching and learning.

Principles of Transistor Circuits

Author : S W Amos,Mike James
Publisher : Elsevier
Page : 401 pages
File Size : 47,7 Mb
Release : 2013-10-22
Category : Technology & Engineering
ISBN : 9781483293905

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Principles of Transistor Circuits by S W Amos,Mike James Pdf

For over thirty years, Stan Amos has provided students and practitioners with a text they could rely on to keep them at the forefront of transistor circuit design. This seminal work has now been presented in a clear new format and completely updated to include the latest equipment such as laser diodes, Trapatt diodes, optocouplers and GaAs transistors, and the most recent line output stages and switch-mode power supplies.Although integrated circuits have widespread application, the role of discrete transistors is undiminished, both as important building blocks which students must understand and as practical solutions to design problems, especially where appreciable power output or high voltage is required. New circuit techniques covered for the first time in this edition include current-dumping amplifiers, bridge output stages, dielectric resonator oscillators, crowbar protection circuits, thyristor field timebases, low-noise blocks and SHF amplifiers in satellite receivers, video clamps, picture enhancement circuits, motor drive circuits in video recorders and camcorders, and UHF modulators. The plan of the book remains the same: semiconductor physics is introduced, followed by details of the design of transistors, amplifiers, receivers, oscillators and generators. Appendices provide information on transistor manufacture and parameters, and a new appendix on transistor letter symbols has been included.

Modern Power Electronic Devices

Author : Francesco Iannuzzo
Publisher : Energy Engineering
Page : 504 pages
File Size : 45,7 Mb
Release : 2020-10
Category : Technology & Engineering
ISBN : 1785619179

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Modern Power Electronic Devices by Francesco Iannuzzo Pdf

Power devices are key to modern power systems, performing functions such as inverting and changing voltages, buffering and switching. Following a device-centric approach, this book covers power electronic applications, semiconductor physics, materials science, application engineering, and key technologies such as MOSFET, IGBT and WBG.

Kinetic Theory and Transport Phenomena

Author : Rodrigo Soto
Publisher : Oxford University Press
Page : 277 pages
File Size : 40,5 Mb
Release : 2016-10-20
Category : Science
ISBN : 9780191025143

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Kinetic Theory and Transport Phenomena by Rodrigo Soto Pdf

One of the questions about which humanity has often wondered is the arrow of time. Why does temporal evolution seem irreversible? That is, we often see objects break into pieces, but we never see them reconstitute spontaneously. This observation was first put into scientific terms by the so-called second law of thermodynamics: entropy never decreases. However, this law does not explain the origin of irreversibly; it only quantifies it. Kinetic theory gives a consistent explanation of irreversibility based on a statistical description of the motion of electrons, atoms, and molecules. The concepts of kinetic theory have been applied to innumerable situations including electronics, the production of particles in the early universe, the dynamics of astrophysical plasmas, quantum gases or the motion of small microorganisms in water, with excellent quantitative agreement. This book presents the fundamentals of kinetic theory, considering classical paradigmatic examples as well as modern applications. It covers the most important systems where kinetic theory is applied, explaining their major features. The text is balanced between exploring the fundamental concepts of kinetic theory (irreversibility, transport processes, separation of time scales, conservations, coarse graining, distribution functions, etc.) and the results and predictions of the theory, where the relevant properties of different systems are computed.

Piezoresistive Effect of p-Type Single Crystalline 3C-SiC

Author : Hoang-Phuong Phan
Publisher : Springer
Page : 156 pages
File Size : 47,8 Mb
Release : 2017-04-06
Category : Technology & Engineering
ISBN : 9783319555447

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Piezoresistive Effect of p-Type Single Crystalline 3C-SiC by Hoang-Phuong Phan Pdf

This book addresses the piezoresistance in p-type 3C-SiC, which it investigates using experimental characterization and theoretical analysis. The gauge factor, the piezoresistive coefficients in two-terminal and four-terminal resistors, the comparison between single crystalline and nanocrystalline SiC, along with the temperature dependence of the piezoresistive effect in p-type 3C-SiC are also discussed. Silicon carbide (SiC) is an excellent material for electronic devices operating at high temperatures, thanks to its large energy band gap, superior mechanical properties and extreme chemical inertness. Among the numerous polytypes of SiC, the cubic single crystal, which is also well known as 3C-SiC, is the most promising platform for microelectromechanical (MEMS) applications, as it can be epitaxially grown on an Si substrate with diameters of up to several hundred millimeters. This feature makes 3C-SiC compatible with the conventional Si-based micro/nano processing and also cuts down the cost of SiC wafers. The investigation into the piezoresistive effect in 3C-SiC is of significant interest for the development of mechanical transducers such as pressure sensors and strain sensors used for controlling combustion and deep well drilling. Although a number of studies have focused on the piezoresistive effect in n-type 3C-SiC, 4H-SiC and 6H-SiC, comparatively little attention has been paid to piezoresistance in p-type 3C-SiC. In addition, the book investigates the piezoresistive effect of top-down fabricated SiC nanowires, revealing a high degree of sensitivity in nanowires employing an innovative nano strain-amplifier. The large gauge factors of the p-type 3C-SiC at both room temperature and high temperatures found here indicate that this polytype could be suitable for the development of mechanical sensing devices operating in harsh environments with high temperatures.

Transistors

Author : M Levinshtein,G Simin
Publisher : World Scientific
Page : 256 pages
File Size : 53,6 Mb
Release : 1998-11-23
Category : Technology & Engineering
ISBN : 9789814498661

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Transistors by M Levinshtein,G Simin Pdf

This new book by M Levinshtein and G Simin tells the readers about the design and work of the most important and most interesting semiconductor devices — the transistors. The book is written in a friendly and easy to read manner and is meant primarily for young people, high school students, freshmen and sophomores. However, the original approach to semiconductor physics makes this book attractive to physics teachers and professors as well. The book consists of 3 parts: Part I: The section on semiconductors describes the main properties of semiconductors, explains the difference between the semiconductors, metals and dielectrics. We find here the explanation of the appearance of those wonderful properties of semiconductors which underlie their numerous applications. This part also contains a vivid and detailed description of the main types of motion of the charge carriers in semiconductors: thermal motion, motion in the electric field and diffusion. Part II covers Barriers and Junctions. In order to understand the principles of the work of the most important semiconductor devices, it is not sufficient just to get to know the properties of semiconductors. It is also quite essential to study certain specific and interesting phenomena — the so-called junctions. This part of the book contains a detailed and vivid description of those properties and in that view of the properties of the p-n junctions and diodes: photodiodes, varicaps, light emitting diodes, solar cells and rectifier diodes. Part III covers Transitors. It describes the basis of the work of the Bipolar and Field Effect Transistors. Without making use of rather complicated equations or notions of quantum mechanics the authors give a clear and simple explanation of the cause of ability of those devices to amplify and generate electric signals. They tell the readers how transistors are manufactured and describe the work of the transistor's simplest circuits. The last chapter of the book is devoted to the ideas underlying the transistors: integrated circuits. It is these integrated circuits which are the foundation of modern electronics: from telephone apparatus to supercomputers, from medical instruments to cosmic communication systems. In conclusion, the authors make an attempt to foresee and imagine, together with the reader what other devices may come to substitute the transistor in the future. Contents:Semiconductors:The Main Properties of SemiconductorsMotion of Electrons and Holes Indside the CrystalBarriers & Junctions:The Barrier on the Crystal BoundaryThe Main Parameters of Potential Barriersp-n JunctionDiodes with the p-n JunctionsTransistors:Bipolar TransistorsField Effect TransistorsTransistors and Life Readership: Students in semiconductors, physics, engineering and laypersons. keywords:Semiconductor Physics: Introduction;Semiconductor Devices: Diodes, BJT's, FETs;Semiconductor Device Physics for High School Students;Freshmen and Sophomores

Diode, Transistor & FET Circuits Manual

Author : R. M. Marston
Publisher : Butterworth-Heinemann
Page : 247 pages
File Size : 47,5 Mb
Release : 1991-01-01
Category : Diodes
ISBN : 0750602287

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Diode, Transistor & FET Circuits Manual by R. M. Marston Pdf

University Physics

Author : OpenStax
Publisher : Unknown
Page : 622 pages
File Size : 43,6 Mb
Release : 2016-11-04
Category : Science
ISBN : 1680920456

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University Physics by OpenStax Pdf

University Physics is a three-volume collection that meets the scope and sequence requirements for two- and three-semester calculus-based physics courses. Volume 1 covers mechanics, sound, oscillations, and waves. Volume 2 covers thermodynamics, electricity and magnetism, and Volume 3 covers optics and modern physics. This textbook emphasizes connections between between theory and application, making physics concepts interesting and accessible to students while maintaining the mathematical rigor inherent in the subject. Frequent, strong examples focus on how to approach a problem, how to work with the equations, and how to check and generalize the result. The text and images in this textbook are grayscale.

Introduction to Modern Power Electronics

Author : Andrzej M. Trzynadlowski
Publisher : John Wiley & Sons
Page : 468 pages
File Size : 48,8 Mb
Release : 2015-11-16
Category : Technology & Engineering
ISBN : 9781119003212

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Introduction to Modern Power Electronics by Andrzej M. Trzynadlowski Pdf

Provides comprehensive coverage of the basic principles and methods of electric power conversion and the latest developments in the field This book constitutes a comprehensive overview of the modern power electronics. Various semiconductor power switches are described, complementary components and systems are presented, and power electronic converters that process power for a variety of applications are explained in detail. This third edition updates all chapters, including new concepts in modern power electronics. New to this edition is extended coverage of matrix converters, multilevel inverters, and applications of the Z-source in cascaded power converters. The book is accompanied by a website hosting an instructor’s manual, a PowerPoint presentation, and a set of PSpice files for simulation of a variety of power electronic converters. Introduction to Modern Power Electronics, Third Edition: Discusses power conversion types: ac-to-dc, ac-to-ac, dc-to-dc, and dc-to-ac Reviews advanced control methods used in today’s power electronic converters Includes an extensive body of examples, exercises, computer assignments, and simulations Introduction to Modern Power Electronics, Third Edition is written for undergraduate and graduate engineering students interested in modern power electronics and renewable energy systems. The book can also serve as a reference tool for practicing electrical and industrial engineers.