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Author : University of Michigan. Solid-State Electronics Laboratory,WOCSDICE
Publisher : Unknown
Page : 214 pages
File Size : 55,8 Mb
Release : 2000-05-01
Category : Integrated circuits
ISBN : 0970311109
Author : D. Pogany,A. Vincze
Publisher : Unknown
Page : 148 pages
File Size : 47,9 Mb
Release : 2004
Category : Electronic
ISBN : 802272050X
Author : Michael Shur,Sergey L. Rumyantsev,Mikhail Efimovich Levinshte?n
Publisher : World Scientific
Page : 342 pages
File Size : 51,5 Mb
Release : 2006
Category : Technology & Engineering
ISBN : 9789812568359
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Author : Sergey Rumyantsev,Michael S Shur,Michael E Levinshtein
Publisher : World Scientific
Page : 342 pages
File Size : 49,7 Mb
Release : 2006-07-25
Category : Technology & Engineering
ISBN : 9789814477772
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Author : Pouya Valizadeh
Publisher : Unknown
Page : 338 pages
File Size : 51,5 Mb
Release : 2005
Category : Electronic
ISBN : UOM:39015062427524
Author : British Library. Document Supply Centre
Publisher : Unknown
Page : 870 pages
File Size : 51,6 Mb
Release : 2003
Category : Conference proceedings
ISBN : STANFORD:36105115205242
Author : R. K. Sharma,D.S. Rawal
Publisher : Springer
Page : 1299 pages
File Size : 44,6 Mb
Release : 2019-01-31
Category : Technology & Engineering
ISBN : 9783319976044
This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
Author : Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni
Publisher : Springer
Page : 380 pages
File Size : 49,7 Mb
Release : 2016-09-08
Category : Technology & Engineering
ISBN : 9783319431994
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Author : Michael Shur
Publisher : World Scientific
Page : 143 pages
File Size : 50,9 Mb
Release : 2007
Category : Technology & Engineering
ISBN : 9789812703835
Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization.This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices.Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.
Author : Stephen Pearton
Publisher : Springer Science & Business Media
Page : 486 pages
File Size : 40,7 Mb
Release : 2012-01-14
Category : Technology & Engineering
ISBN : 9783642235214
The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.
Author : IEEE Staff
Publisher : Unknown
Page : 128 pages
File Size : 42,6 Mb
Release : 2021-11-17
Category : Electronic
ISBN : 1665442018
The meeting covers all areas of electron devices Si devices, Compound semiconductor, Power devices, emerging devices, solid state device, microwave, optoelectronics, computer and circuit technology
Author : Johan Huijsing,Michiel Steyaert,Arthur H.M. van Roermund
Publisher : Springer Science & Business Media
Page : 394 pages
File Size : 55,7 Mb
Release : 2007-05-08
Category : Technology & Engineering
ISBN : 9780306479502
This book contains the revised contributions of the 18 tutorial speakers at the tenth AACD 2001 in Noordwijk, the Netherlands, April 24-26. The conference was organized by Marcel Pelgrom, Philips Research Eindhoven, and Ed van Tuijl, Philips Research Eindhoven and Twente University, Enschede, the Netherlands. The program committee consisted of: Johan Huijsing, Delft University of Technology Arthur van Roermund, Eindhoven University of Technology Michiel Steyaert, Catholic University of Leuven The program was concentrated around three main topics in analog circuit design. Each of these topics has been covered by six papers. The three main topics are: Scalable Analog Circuit Design High-Speed D/A Converters RF Power Amplifiers Other topics covered before in this series: 2000 High-Speed Analog-to-Digital Converters Mixed Signal Design PLL’s and Synthesizers 1999 XDSL and other Communication Systems RF MOST Models Integrated Filters and Oscillators 1998 1-Volt- Electronics Mixed-Mode Systems Low-Noise and RF Power Amplifiers for Telecommunication vii viii 1997 RF A-D Converters Sensor and Actuator Interfaces Low-Noise Oscillators, PLL’s and Synthesizers 1996 RF CMOS Circuit Design Bandpass Sigma Delta and other Converters Translinear Circuits 1995 Low-Noise, Low-Power, Low-Voltage Mixed Mode with CAD Trials Voltage, Current and Time References 1994 Low-Power Low Voltage Integrated Filters Smart power 1993 Mixed-Mode A/D Design Sensor Interfaces Communications Circuits 1992 Op Amps ADC’s Analog CAD We hope to serve the analog design community with these series of books and plan to continue this series in the future. Johan H.
Author : Markus-Christian Amann,Jens Buus
Publisher : Artech House Optoelectronics L
Page : 0 pages
File Size : 45,5 Mb
Release : 1998
Category : Technology & Engineering
ISBN : 0890069638
This comprehensive reference discusses the underlying physics, operational principles, and performance and applications of tunable laser diodes. The book is supplemented with practical examples and helpful notations.
Author : Rüdiger Quay
Publisher : Springer Science & Business Media
Page : 470 pages
File Size : 40,7 Mb
Release : 2008-04-05
Category : Technology & Engineering
ISBN : 9783540718925
This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
Author : Guo Qi Zhang,Alfred van Roosmalen
Publisher : Springer Science & Business Media
Page : 338 pages
File Size : 49,5 Mb
Release : 2010-01-23
Category : Technology & Engineering
ISBN : 9780387755939
In the past decades, the mainstream of microelectronics progression was mainly powered by Moore's law focusing on IC miniaturization down to nano scale. However, there is a fast increasing need for "More than Moore" (MtM) products and technology that are based upon or derived from silicon technologies, but do not simply scale with Moore’s law. This book provides new vision, strategy and guidance for the future technology and business development of micro/nanoelectronics.
