3d Integration Of Resistive Switching Memory

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3D Integration of Resistive Switching Memory

Author : Qing Luo
Publisher : CRC Press
Page : 107 pages
File Size : 45,7 Mb
Release : 2023-04-13
Category : Technology & Engineering
ISBN : 9781000888409

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3D Integration of Resistive Switching Memory by Qing Luo Pdf

This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.

3D Integration of Resistive Switching Memory

Author : Qing Luo
Publisher : Unknown
Page : 0 pages
File Size : 45,7 Mb
Release : 2023
Category : Electronic books
ISBN : 1000888444

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3D Integration of Resistive Switching Memory by Qing Luo Pdf

"This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures, to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-selective cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM Beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general"--

Resistive Random Access Memory (RRAM)

Author : Shimeng Yu
Publisher : Springer Nature
Page : 71 pages
File Size : 45,9 Mb
Release : 2022-06-01
Category : Technology & Engineering
ISBN : 9783031020308

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Resistive Random Access Memory (RRAM) by Shimeng Yu Pdf

RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.

Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations

Author : Jennifer Rupp,Daniele Ielmini,Ilia Valov
Publisher : Springer Nature
Page : 386 pages
File Size : 50,9 Mb
Release : 2021-10-15
Category : Technology & Engineering
ISBN : 9783030424244

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Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations by Jennifer Rupp,Daniele Ielmini,Ilia Valov Pdf

This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.

Advances In 3d Integrated Circuits And Systems

Author : Yu Hao,Tan Chuan Seng
Publisher : World Scientific
Page : 392 pages
File Size : 45,6 Mb
Release : 2015-08-28
Category : Technology & Engineering
ISBN : 9789814699037

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Advances In 3d Integrated Circuits And Systems by Yu Hao,Tan Chuan Seng Pdf

3D integration is an emerging technology for the design of many-core microprocessors and memory integration. This book, Advances in 3D Integrated Circuits and Systems, is written to help readers understand 3D integrated circuits in three stages: device basics, system level management, and real designs.Contents presented in this book include fabrication techniques for 3D TSV and 2.5D TSI; device modeling; physical designs; thermal, power and I/O management; and 3D designs of sensors, I/Os, multi-core processors, and memory.Advanced undergraduates, graduate students, researchers and engineers may find this text useful for understanding the many challenges faced in the development and building of 3D integrated circuits and systems.

Advances in Non-volatile Memory and Storage Technology

Author : Yoshio Nishi,Blanka Magyari-Kope
Publisher : Woodhead Publishing
Page : 662 pages
File Size : 49,6 Mb
Release : 2019-06-15
Category : Science
ISBN : 9780081025857

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Advances in Non-volatile Memory and Storage Technology by Yoshio Nishi,Blanka Magyari-Kope Pdf

Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping and resistive random access memory

Springer Handbook of Semiconductor Devices

Author : Massimo Rudan,Rossella Brunetti,Susanna Reggiani
Publisher : Springer Nature
Page : 1680 pages
File Size : 45,8 Mb
Release : 2022-11-10
Category : Technology & Engineering
ISBN : 9783030798277

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Springer Handbook of Semiconductor Devices by Massimo Rudan,Rossella Brunetti,Susanna Reggiani Pdf

This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.

Memristors and Memristive Systems

Author : Ronald Tetzlaff
Publisher : Springer Science & Business Media
Page : 409 pages
File Size : 44,8 Mb
Release : 2013-12-11
Category : Technology & Engineering
ISBN : 9781461490685

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Memristors and Memristive Systems by Ronald Tetzlaff Pdf

This book provides a comprehensive overview of current research on memristors, memcapacitors and, meminductors. In addition to an historical overview of the research in this area, coverage includes the theory behind memristive circuits, as well as memcapacitance, and meminductance. Details are shown for recent applications of memristors for resistive random access memories, neuromorphic systems and hybrid CMOS/memristor circuits. Methods for the simulation of memristors are demonstrated and an introduction to neuromorphic modeling is provided.

Metal Oxides for Non-volatile Memory

Author : Panagiotis Dimitrakis,Ilia Valov,Stefan Tappertzhofen
Publisher : Elsevier
Page : 534 pages
File Size : 47,6 Mb
Release : 2022-03-01
Category : Technology & Engineering
ISBN : 9780128146309

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Metal Oxides for Non-volatile Memory by Panagiotis Dimitrakis,Ilia Valov,Stefan Tappertzhofen Pdf

Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology

Functional Metal Oxide Nanostructures

Author : Junqiao Wu,Jinbo Cao,Wei-Qiang Han,Anderson Janotti,Ho-Cheol Kim
Publisher : Springer Science & Business Media
Page : 371 pages
File Size : 49,6 Mb
Release : 2011-09-22
Category : Technology & Engineering
ISBN : 9781441999313

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Functional Metal Oxide Nanostructures by Junqiao Wu,Jinbo Cao,Wei-Qiang Han,Anderson Janotti,Ho-Cheol Kim Pdf

Metal oxides and particularly their nanostructures have emerged as animportant class of materials with a rich spectrum of properties and greatpotential for device applications. In this book, contributions from leadingexperts emphasize basic physical properties, synthesis and processing, and thelatest applications in such areas as energy, catalysis and data storage. Functional Metal Oxide Nanostructuresis an essential reference for any materials scientist or engineer with aninterest in metal oxides, and particularly in recent progress in defectphysics, strain effects, solution-based synthesis, ionic conduction, and theirapplications.

3D Flash Memories

Author : Rino Micheloni
Publisher : Springer
Page : 380 pages
File Size : 45,8 Mb
Release : 2016-05-26
Category : Computers
ISBN : 9789401775120

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3D Flash Memories by Rino Micheloni Pdf

This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integrated within the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D be reliable enough for enterprise and datacenter applications? These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.

Handbook of Memristor Networks

Author : Leon Chua,Georgios Ch. Sirakoulis,Andrew Adamatzky
Publisher : Springer Nature
Page : 1368 pages
File Size : 41,6 Mb
Release : 2019-11-12
Category : Computers
ISBN : 9783319763750

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Handbook of Memristor Networks by Leon Chua,Georgios Ch. Sirakoulis,Andrew Adamatzky Pdf

This Handbook presents all aspects of memristor networks in an easy to read and tutorial style. Including many colour illustrations, it covers the foundations of memristor theory and applications, the technology of memristive devices, revised models of the Hodgkin-Huxley Equations and ion channels, neuromorphic architectures, and analyses of the dynamic behaviour of memristive networks. It also shows how to realise computing devices, non-von Neumann architectures and provides future building blocks for deep learning hardware. With contributions from leaders in computer science, mathematics, electronics, physics, material science and engineering, the book offers an indispensable source of information and an inspiring reference text for future generations of computer scientists, mathematicians, physicists, material scientists and engineers working in this dynamic field.

Resistive Switching

Author : Daniele Ielmini,Rainer Waser
Publisher : John Wiley & Sons
Page : 784 pages
File Size : 41,6 Mb
Release : 2015-12-28
Category : Technology & Engineering
ISBN : 9783527680948

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Resistive Switching by Daniele Ielmini,Rainer Waser Pdf

With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.

Memristive Devices for Brain-Inspired Computing

Author : Sabina Spiga,Abu Sebastian,Damien Querlioz,Bipin Rajendran
Publisher : Woodhead Publishing
Page : 569 pages
File Size : 45,7 Mb
Release : 2020-06-12
Category : Technology & Engineering
ISBN : 9780081027875

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Memristive Devices for Brain-Inspired Computing by Sabina Spiga,Abu Sebastian,Damien Querlioz,Bipin Rajendran Pdf

Memristive Devices for Brain-Inspired Computing: From Materials, Devices, and Circuits to Applications—Computational Memory, Deep Learning, and Spiking Neural Networks reviews the latest in material and devices engineering for optimizing memristive devices beyond storage applications and toward brain-inspired computing. The book provides readers with an understanding of four key concepts, including materials and device aspects with a view of current materials systems and their remaining barriers, algorithmic aspects comprising basic concepts of neuroscience as well as various computing concepts, the circuits and architectures implementing those algorithms based on memristive technologies, and target applications, including brain-inspired computing, computational memory, and deep learning. This comprehensive book is suitable for an interdisciplinary audience, including materials scientists, physicists, electrical engineers, and computer scientists. Provides readers an overview of four key concepts in this emerging research topic including materials and device aspects, algorithmic aspects, circuits and architectures and target applications Covers a broad range of applications, including brain-inspired computing, computational memory, deep learning and spiking neural networks Includes perspectives from a wide range of disciplines, including materials science, electrical engineering and computing, providing a unique interdisciplinary look at the field

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6

Author : Fred Roozeboom,Paul Timans,Evgeni Gusev,Vijay Narayanan,Kuniyuki Kakushima,Zia Karim,Stefan De Gendt
Publisher : The Electrochemical Society
Page : 356 pages
File Size : 54,7 Mb
Release : 2024-07-01
Category : Electronic
ISBN : 9781607687146

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Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 by Fred Roozeboom,Paul Timans,Evgeni Gusev,Vijay Narayanan,Kuniyuki Kakushima,Zia Karim,Stefan De Gendt Pdf