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Author : Wan Shen
Publisher : Forschungszentrum Jülich
Page : 129 pages
File Size : 41,5 Mb
Release : 2010
Category : Electronic
ISBN : 9783893366088
Author : Daniele Ielmini,Rainer Waser
Publisher : John Wiley & Sons
Page : 784 pages
File Size : 48,8 Mb
Release : 2015-12-28
Category : Technology & Engineering
ISBN : 9783527680948
With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
Author : Jianyong Ouyang
Publisher : Springer
Page : 93 pages
File Size : 48,5 Mb
Release : 2016-07-04
Category : Technology & Engineering
ISBN : 9783319315720
This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
Author : Lin Yang
Publisher : Forschungszentrum Jülich
Page : 141 pages
File Size : 53,6 Mb
Release : 2011
Category : Electronic
ISBN : 9783893367078
Author : Christian Rodenbücher
Publisher : Forschungszentrum Jülich
Page : 223 pages
File Size : 54,9 Mb
Release : 2014
Category : Electronic
ISBN : 9783893369805
Author : Qing Luo
Publisher : CRC Press
Page : 107 pages
File Size : 43,8 Mb
Release : 2023-04-13
Category : Technology & Engineering
ISBN : 9781000888409
This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.
Author : Jennifer Rupp,Daniele Ielmini,Ilia Valov
Publisher : Springer Nature
Page : 386 pages
File Size : 45,5 Mb
Release : 2021-10-15
Category : Technology & Engineering
ISBN : 9783030424244
This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.
Author : Irina Kärkkänen
Publisher : Forschungszentrum Jülich
Page : 151 pages
File Size : 54,5 Mb
Release : 2014
Category : Electronic
ISBN : 9783893369713
Author : Doo Seok Jeong
Publisher : Forschungszentrum Jülich
Page : 153 pages
File Size : 54,8 Mb
Release : 2009
Category : Electronic
ISBN : 9783893365791
Author : Annemarie Köhl
Publisher : Forschungszentrum Jülich
Page : 181 pages
File Size : 51,8 Mb
Release : 2014
Category : Electronic
ISBN : 9783893369881
Author : Christian Nauenheim
Publisher : Forschungszentrum Jülich
Page : 159 pages
File Size : 55,6 Mb
Release : 2010
Category : Electronic
ISBN : 9783893366361
Author : Christos Volos,Viet-Thanh Pham
Publisher : Academic Press
Page : 570 pages
File Size : 41,9 Mb
Release : 2021-06-17
Category : Technology & Engineering
ISBN : 9780128232026
Mem-elements for Neuromorphic Circuits with Artificial Intelligence Applications illustrates recent advances in the field of mem-elements (memristor, memcapacitor, meminductor) and their applications in nonlinear dynamical systems, computer science, analog and digital systems, and in neuromorphic circuits and artificial intelligence. The book is mainly devoted to recent results, critical aspects and perspectives of ongoing research on relevant topics, all involving networks of mem-elements devices in diverse applications. Sections contribute to the discussion of memristive materials and transport mechanisms, presenting various types of physical structures that can be fabricated to realize mem-elements in integrated circuits and device modeling. As the last decade has seen an increasing interest in recent advances in mem-elements and their applications in neuromorphic circuits and artificial intelligence, this book will attract researchers in various fields. Covers a broad range of interdisciplinary topics between mathematics, circuits, realizations, and practical applications related to nonlinear dynamical systems, nanotechnology, analog and digital systems, computer science and artificial intelligence Presents recent advances in the field of mem-elements (memristor, memcapacitor, meminductor) Includes interesting applications of mem-elements in nonlinear dynamical systems, analog and digital systems, neuromorphic circuits, computer science and artificial intelligence
Author : Daniele Ielmini,Rainer Waser
Publisher : John Wiley & Sons
Page : 784 pages
File Size : 46,8 Mb
Release : 2015-12-23
Category : Technology & Engineering
ISBN : 9783527680931
With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
Author : Qing Wan,Yi Shi
Publisher : John Wiley & Sons
Page : 258 pages
File Size : 40,5 Mb
Release : 2021-12-10
Category : Technology & Engineering
ISBN : 9783527835300
Explore the cutting-edge of neuromorphic technologies with applications in Artificial Intelligence In Neuromorphic Devices for Brain-Inspired Computing: Artificial Intelligence, Perception, and Robotics, a team of expert engineers delivers a comprehensive discussion of all aspects of neuromorphic electronics designed to assist researchers and professionals to understand and apply all manner of brain-inspired computing and perception technologies. The book covers both memristic and neuromorphic devices, including spintronic, multi-terminal, and neuromorphic perceptual applications. Summarizing recent progress made in five distinct configurations of brain-inspired computing, the authors explore this promising technology’s potential applications in two specific areas: neuromorphic computing systems and neuromorphic perceptual systems. The book also includes: A thorough introduction to two-terminal neuromorphic memristors, including memristive devices and resistive switching mechanisms Comprehensive explorations of spintronic neuromorphic devices and multi-terminal neuromorphic devices with cognitive behaviors Practical discussions of neuromorphic devices based on chalcogenide and organic materials In-depth examinations of neuromorphic computing and perceptual systems with emerging devices Perfect for materials scientists, biochemists, and electronics engineers, Neuromorphic Devices for Brain-Inspired Computing: Artificial Intelligence, Perception, and Robotics will also earn a place in the libraries of neurochemists, neurobiologists, and neurophysiologists.
Author : An Chen,James Hutchby,Victor Zhirnov,George Bourianoff
Publisher : John Wiley & Sons
Page : 576 pages
File Size : 52,7 Mb
Release : 2014-11-12
Category : Technology & Engineering
ISBN : 9781118958261
Emerging Nanoelectronic Devices focuses on the future direction of semiconductor and emerging nanoscale device technology. As the dimensional scaling of CMOS approaches its limits, alternate information processing devices and microarchitectures are being explored to sustain increasing functionality at decreasing cost into the indefinite future. This is driving new paradigms of information processing enabled by innovative new devices, circuits, and architectures, necessary to support an increasingly interconnected world through a rapidly evolving internet. This original title provides a fresh perspective on emerging research devices in 26 up to date chapters written by the leading researchers in their respective areas. It supplements and extends the work performed by the Emerging Research Devices working group of the International Technology Roadmap for Semiconductors (ITRS). Key features: • Serves as an authoritative tutorial on innovative devices and architectures that populate the dynamic world of “Beyond CMOS” technologies. • Provides a realistic assessment of the strengths, weaknesses and key unknowns associated with each technology. • Suggests guidelines for the directions of future development of each technology. • Emphasizes physical concepts over mathematical development. • Provides an essential resource for students, researchers and practicing engineers.
