Characterization Of Wide Bandgap Power Semiconductor Devices

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Characterization of Wide Bandgap Power Semiconductor Devices

Fei Wang,Zheyu Zhang,Edward A. Jones
Characterization of Wide Bandgap Power Semiconductor Devices Book PDF

Author : Fei Wang,Zheyu Zhang,Edward A. Jones
Publisher : Institution of Engineering and Technology
Page : 348 pages
File Size : 55,8 Mb
Release : 2018
Category : Technology & Engineering
ISBN : 9781785614910

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Characterization of Wide Bandgap Power Semiconductor Devices by Fei Wang,Zheyu Zhang,Edward A. Jones Pdf

At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection. Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. After an introduction, the book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross-talk consideration; impact of three-phase system; and topology considerations.

Wide Bandgap Semiconductors for Power Electronics

Peter Wellmann,Noboru Ohtani,Roland Rupp
Wide Bandgap Semiconductors for Power Electronics Book PDF

Author : Peter Wellmann,Noboru Ohtani,Roland Rupp
Publisher : John Wiley & Sons
Page : 743 pages
File Size : 50,5 Mb
Release : 2022-01-10
Category : Technology & Engineering
ISBN : 9783527346714

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Wide Bandgap Semiconductors for Power Electronics by Peter Wellmann,Noboru Ohtani,Roland Rupp Pdf

Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.

Wide Bandgap Semiconductor Power Devices

B. Jayant Baliga
Wide Bandgap Semiconductor Power Devices Book PDF

Author : B. Jayant Baliga
Publisher : Woodhead Publishing
Page : 418 pages
File Size : 51,8 Mb
Release : 2018-10-17
Category : Technology & Engineering
ISBN : 9780081023075

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Wide Bandgap Semiconductor Power Devices by B. Jayant Baliga Pdf

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature: Volume 512

Steven Denbaars,John Palmour,Michael Shur,Michael Spencer
Wide Bandgap Semiconductors for High Power High Frequency and High Temperature Volume 512 Book PDF

Author : Steven Denbaars,John Palmour,Michael Shur,Michael Spencer
Publisher : Cambridge University Press
Page : 0 pages
File Size : 43,5 Mb
Release : 1998-09-01
Category : Technology & Engineering
ISBN : 1558994181

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Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature: Volume 512 by Steven Denbaars,John Palmour,Michael Shur,Michael Spencer Pdf

Wide-bandgap semiconductors have a long and illustrious history, starting with the first paper on SiC light-emitting diodes published in 1907. Since then, interest in wide-bandgap semiconductors has skyrocketed. Improved material quality, important breakthroughs both in SiC and GaN technologies, and the emergence of blue GaN-based lasers, have stimulated this progress. To provide a fairly complete picture of this important field, most of the work presented at the conference is included in the volume. In addition, invited papers present an excellent overview of the current state of the art and offer projections for future developments. Topics include: GaN materials and devices; crystal growth; SiC materials and devices; characterization of wide-bandgap semiconductors; and processing characterization and properties of wide-bandgap materials.

Wide Bandgap Based Devices

Farid Medjdoub
Wide Bandgap Based Devices Book PDF

Author : Farid Medjdoub
Publisher : MDPI
Page : 242 pages
File Size : 46,8 Mb
Release : 2021-05-26
Category : Technology & Engineering
ISBN : 9783036505664

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Wide Bandgap Based Devices by Farid Medjdoub Pdf

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

Wide Bandgap Semiconductor Electronics And Devices

Uttam Singisetti,Towhidur Razzak,Yuewei Zhang
Wide Bandgap Semiconductor Electronics And Devices Book PDF

Author : Uttam Singisetti,Towhidur Razzak,Yuewei Zhang
Publisher : World Scientific
Page : 258 pages
File Size : 50,5 Mb
Release : 2019-12-10
Category : Technology & Engineering
ISBN : 9789811216497

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Wide Bandgap Semiconductor Electronics And Devices by Uttam Singisetti,Towhidur Razzak,Yuewei Zhang Pdf

'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Yue Hao,Jin Feng Zhang,Jin Cheng Zhang
Nitride Wide Bandgap Semiconductor Material and Electronic Devices Book PDF

Author : Yue Hao,Jin Feng Zhang,Jin Cheng Zhang
Publisher : CRC Press
Page : 325 pages
File Size : 47,6 Mb
Release : 2016-11-03
Category : Computers
ISBN : 9781315351834

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Nitride Wide Bandgap Semiconductor Material and Electronic Devices by Yue Hao,Jin Feng Zhang,Jin Cheng Zhang Pdf

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Wide Energy Bandgap Electronic Devices

Fan Ren,John C Zolper
Wide Energy Bandgap Electronic Devices Book PDF

Author : Fan Ren,John C Zolper
Publisher : World Scientific
Page : 528 pages
File Size : 50,9 Mb
Release : 2003-07-14
Category : Technology & Engineering
ISBN : 9789814486897

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Wide Energy Bandgap Electronic Devices by Fan Ren,John C Zolper Pdf

This book provides a summary of the current state-of-the-art in SiC and GaN and identify future areas of development. The remarkable improvements in material quality and device performance in the last few years show the promise of these technologies for areas that Si cannot operate because of it's smaller bandgap. We feel that this collection of chapters provides an excellent introduction to the field and is an outstanding reference for those performing research on wide bandgap semiconductors. In this book, we bring together numerous experts in the field to review progress in SiC and GaN electronic devices and novel detectors. Professor Morkoc reviews the growth and characterization of nitrides, followed by chapters from Professor Shur, Professor Karmalkar, and Professor Gaska on High Electron Mobility Transistors, Professor Pearton and co-workers on ultra-high breakdown voltage GaN-based rectifiers and the group of Professor Abernathy on emerging MOS devices in the nitride system. Dr Baca from Sandia National Laboratories and Dr Chang from Agilent review the use of mixed group V-nitrides as the base layer in novel Heterojunction Bipolar Transistors. There are 3 chapters on SiC, including Professor Skowronski on growth and characterization, Professor Chow on power Schottky and pin rectifiers and Professor Cooper on power MOSFETs. Professor Dupuis and Professor Campbell give an overview of short wavelength, nitride based detectors. Finally, Jihyun Kim and co-workers describe recent progress in wide bandgap semiconductor spintronics where one can obtain room temperature ferromagnetism and exploit the spin of the electron in addition to its charge. Contents:Growth of III-Nitride Semiconductors and Their Characterization (H Morkoç et al.)GaN and AlGaN High Voltage Power Rectifiers (A-P Zhang et al.)GaN-Based Power High Electron Mobility Transistors (S Karmalkar et al.)Fabrication and Performance of GaN MOSFETs and MOSHFETs (C R Abernathy & B P Gila)SiC Materials Growth and Characterization (M Skowronski)High Voltage SiC Power Rectifiers (T P Chow)Silicon Carbide MOSFETs (J A Cooper, Jr.)InGaAsN-Based HBTs (A G Baca & P C Chang)Ultraviolet Photodetectors Based Upon III-N Materials (R D Dupuis & J C Campbell)Dilute Magnetic GaN, SiC and Related Semiconductors (J Kim et al.) Readership:Researchers, professors and graduate students in the field of wide bandgap semiconductors. Keywords:Wide Bandgap;Electronic Devices;GaN;SiC;HBT Ultraviolet Photodetectors

Wide Bandgap Power Semiconductor Packaging

Katsuaki Suganuma
Wide Bandgap Power Semiconductor Packaging Book PDF

Author : Katsuaki Suganuma
Publisher : Woodhead Publishing
Page : 240 pages
File Size : 55,9 Mb
Release : 2018-05-28
Category : Technology & Engineering
ISBN : 9780081020951

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Wide Bandgap Power Semiconductor Packaging by Katsuaki Suganuma Pdf

Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic. Examines the key challenges of wide bandgap power semiconductor packaging at various levels, including materials, components and device performance Provides the latest research on potential solutions, with an eye towards the end goal of system integration Discusses key problems, such as thermal management, noise reduction, challenges in interconnects and substrates

Short Circuit Requirements of Power Converters based upon Wide-Bandgap Semiconductors

Douglas Pappis
Short Circuit Requirements of Power Converters based upon Wide Bandgap Semiconductors Book PDF

Author : Douglas Pappis
Publisher : BoD – Books on Demand
Page : 270 pages
File Size : 42,7 Mb
Release : 2021-01-01
Category : Technology & Engineering
ISBN : 9783737609777

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Short Circuit Requirements of Power Converters based upon Wide-Bandgap Semiconductors by Douglas Pappis Pdf

In power electronics designs, the evaluation and prediction of potential fault conditions on semiconductors is essential for achieving safe operation and reliability, being short circuit (SC) one of the most probable and destructive failures. Recent improvements on Wide-Bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium nitrite (GaN) enable power electronic designs with outstanding performance, reshaping the power electronics landscape. In comparison to Silicon (Si), SiC and GaN power semiconductors physically present smaller chip areas, higher maximum internal electric fields, and higher current densities. Such characteristics yield a much faster rise of the devices’ internal temperatures, worsening their SC performance. In this way, this dissertation consists of a comprehensive investigation about SC on SiC MOSFETs, GaN HEMT, and GaN E-HEMT transistors, as well as contextualizing their particularities on SC performance by comparison with that of Si IBGTs. Moreover, an investigation towards how to prevent SC occurrences besides a review of available SC protection methods is presented.

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

Yogesh Kumar Sharma
Disruptive Wide Bandgap Semiconductors Related Technologies and Their Applications Book PDF

Author : Yogesh Kumar Sharma
Publisher : BoD – Books on Demand
Page : 154 pages
File Size : 45,8 Mb
Release : 2018-09-12
Category : Technology & Engineering
ISBN : 9781789236682

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Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications by Yogesh Kumar Sharma Pdf

SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.

Wide Bandgap Semiconductor-based Electronics

F. Ren,S. J. Pearton
Wide Bandgap Semiconductor based Electronics Book PDF

Author : F. Ren,S. J. Pearton
Publisher : Unknown
Page : 128 pages
File Size : 52,8 Mb
Release : 2020
Category : TECHNOLOGY & ENGINEERING
ISBN : 0750325151

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Wide Bandgap Semiconductor-based Electronics by F. Ren,S. J. Pearton Pdf

Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications. This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems. The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas.

Design of Three-phase AC Power Electronics Converters

Fei "Fred" Wang,Zheyu Zhang,Ruirui Chen
Design of Three phase AC Power Electronics Converters Book PDF

Author : Fei "Fred" Wang,Zheyu Zhang,Ruirui Chen
Publisher : John Wiley & Sons
Page : 692 pages
File Size : 44,7 Mb
Release : 2023-11-30
Category : Technology & Engineering
ISBN : 9781119794233

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Design of Three-phase AC Power Electronics Converters by Fei "Fred" Wang,Zheyu Zhang,Ruirui Chen Pdf

DESIGN OF THREE-PHASE AC POWER ELECTRONICS CONVERTERS Comprehensive resource on design of power electronics converters for three-phase AC applications Design of Three-phase AC Power Electronics Converters contains a systematic discussion of the three-phase AC converter design considering various electrical, thermal, and mechanical subsystems and functions. Focusing on establishing converter components and subsystems models needed for the design, the text demonstrates example designs for these subsystems and for the whole three-phase AC converters considering interactions among subsystems. The design methods apply to different applications and topologies. The text presents the basics of the three-phase AC converter, its design, and the goal and organization of the book, focusing on the characteristics and models important to the converter design for components commonly used in three-phase AC converters. The authors present the design of subsystems, including passive rectifiers, inverters and active rectifiers, electromagnetic interference (EMI) filters, thermal management system, control and auxiliaries, mechanical system, and application considerations, and discuss design optimization, which presents methodology to achieve optimal design results for three-phase AC converters. Specific sample topics covered in Design of Three-phase AC Power Electronics Converters include: Models and characteristics for devices most commonly used in three-phase converters, including conventional Si devices, and emerging SiC and GaN devices Models and selection of various capacitors; characteristics and design of magnetics using different types of magnetic cores, with a focus on inductors Optimal three-phase AC converter design including design and selection of devices, AC line inductors, DC bus capacitors, EMI filters, heatsinks, and control. The design considers both steady-state and transient conditions Load and source impact converter design, such as motors and grid condition impacts For researchers and graduate students in power electronics, along with practicing engineers working in the area of three-phase AC converters, Design of Three-phase AC Power Electronics Converters serves as an essential resource for the subject and may be used as a textbook or industry reference.

Wide Bandgap Based Devices

Farid Medjdoub
Wide Bandgap Based Devices Book PDF

Author : Farid Medjdoub
Publisher : Unknown
Page : 242 pages
File Size : 49,5 Mb
Release : 2021
Category : Electronic
ISBN : 3036505679

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Wide Bandgap Based Devices by Farid Medjdoub Pdf

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III-V, and other compound semiconductor devices and integrated circuits.

Electrified Aircraft Propulsion

Kiruba Haran,Nateri Madavan,Tim C. O'Connell
Electrified Aircraft Propulsion Book PDF

Author : Kiruba Haran,Nateri Madavan,Tim C. O'Connell
Publisher : Cambridge University Press
Page : 317 pages
File Size : 50,8 Mb
Release : 2022-05-26
Category : Business & Economics
ISBN : 9781108419345

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Electrified Aircraft Propulsion by Kiruba Haran,Nateri Madavan,Tim C. O'Connell Pdf

An ideal introduction to advances and outstanding challenges in large electric aircraft design, combining expertise from leading researchers.