Wide Bandgap Semiconductor Power Devices

Author : B. Jayant Baliga
Publisher : Woodhead Publishing
Page : 418 pages
File Size : 48,8 Mb
Release : 2018-10-17
Category : Technology & Engineering
ISBN : 9780081023075

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Wide Bandgap Semiconductor Power Devices by B. Jayant Baliga Pdf

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Author : Fei Wang,Zheyu Zhang,Edward A. Jones
Publisher : Institution of Engineering and Technology
Page : 348 pages
File Size : 43,7 Mb
Release : 2018
Category : Technology & Engineering
ISBN : 9781785614910

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Characterization of Wide Bandgap Power Semiconductor Devices by Fei Wang,Zheyu Zhang,Edward A. Jones Pdf

At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection. Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. After an introduction, the book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross-talk consideration; impact of three-phase system; and topology considerations.

Author : Peter Wellmann,Noboru Ohtani,Roland Rupp
Publisher : John Wiley & Sons
Page : 743 pages
File Size : 49,9 Mb
Release : 2022-01-10
Category : Technology & Engineering
ISBN : 9783527346714

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Wide Bandgap Semiconductors for Power Electronics by Peter Wellmann,Noboru Ohtani,Roland Rupp Pdf

Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.

Author : Katsuaki Suganuma
Publisher : Woodhead Publishing
Page : 240 pages
File Size : 54,5 Mb
Release : 2018-05-28
Category : Technology & Engineering
ISBN : 9780081020951

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Wide Bandgap Power Semiconductor Packaging by Katsuaki Suganuma Pdf

Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic. Examines the key challenges of wide bandgap power semiconductor packaging at various levels, including materials, components and device performance Provides the latest research on potential solutions, with an eye towards the end goal of system integration Discusses key problems, such as thermal management, noise reduction, challenges in interconnects and substrates

Author : Fan Ren,J. C. Zolper
Publisher : World Scientific
Page : 526 pages
File Size : 48,8 Mb
Release : 2003
Category : Technology & Engineering
ISBN : 9789812382467

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Wide Energy Bandgap Electronic Devices by Fan Ren,J. C. Zolper Pdf

Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastructure and high temperature electronics.

Author : Meiyong Liao,Bo Shen,Zhanguo Wang
Publisher : Elsevier
Page : 503 pages
File Size : 48,6 Mb
Release : 2019-06-18
Category : Technology & Engineering
ISBN : 9780128172568

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Ultra-wide Bandgap Semiconductor Materials by Meiyong Liao,Bo Shen,Zhanguo Wang Pdf

Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics

Author : Fan Ren,S. J. Pearton,Institute of Physics (Great Britain)
Publisher : Unknown
Page : 0 pages
File Size : 52,6 Mb
Release : 2020
Category : Gallium arsenide semiconductors
ISBN : 075032516X

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Wide Bandgap Semiconductor-based Electronics by Fan Ren,S. J. Pearton,Institute of Physics (Great Britain) Pdf

"Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications. This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems. The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas." -- Prové de l'editor.

Author : B. Jayant Baliga
Publisher : World Scientific
Page : 526 pages
File Size : 48,6 Mb
Release : 2005
Category : Technology & Engineering
ISBN : 9789812774521

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Silicon Carbide Power Devices by B. Jayant Baliga Pdf

Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.

Author : Yogesh Kumar Sharma
Publisher : BoD – Books on Demand
Page : 154 pages
File Size : 49,8 Mb
Release : 2018-09-12
Category : Technology & Engineering
ISBN : 9781789236682

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Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications by Yogesh Kumar Sharma Pdf

SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.

Author : Hongyu Yu,Tianli Duan
Publisher : CRC Press
Page : 292 pages
File Size : 49,9 Mb
Release : 2017-07-06
Category : Science
ISBN : 9781351767606

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Gallium Nitride Power Devices by Hongyu Yu,Tianli Duan Pdf

GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

Author : Kazuhiro Mochizuki
Publisher : Artech House
Page : 308 pages
File Size : 53,8 Mb
Release : 2018-04-30
Category : Technology & Engineering
ISBN : 9781630814298

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Vertical GaN and SiC Power Devices by Kazuhiro Mochizuki Pdf

This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices. Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource.

Author : B. Jayant Baliga
Publisher : Springer
Page : 1086 pages
File Size : 55,6 Mb
Release : 2018-09-28
Category : Technology & Engineering
ISBN : 9783319939889

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Fundamentals of Power Semiconductor Devices by B. Jayant Baliga Pdf

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.

Author : S. J. Pearton,C. R. Abernathy,F. Ren
Publisher : World Scientific
Page : 568 pages
File Size : 43,7 Mb
Release : 1996
Category : Technology & Engineering
ISBN : 9810218842

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Topics in Growth and Device Processing of III-V Semiconductors by S. J. Pearton,C. R. Abernathy,F. Ren Pdf

This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.

Author : Stephen Pearton,Fan Ren,Michael Mastro
Publisher : Elsevier
Page : 507 pages
File Size : 51,5 Mb
Release : 2018-10-15
Category : Technology & Engineering
ISBN : 9780128145227

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Gallium Oxide by Stephen Pearton,Fan Ren,Michael Mastro Pdf

Gallium Oxide: Technology, Devices and Applications discusses the wide bandgap semiconductor and its promising applications in power electronics, solar blind UV detectors, and in extreme environment electronics. It also covers the fundamental science of gallium oxide, providing an in-depth look at the most relevant properties of this materials system. High quality bulk Ga2O3 is now commercially available from several sources and n-type epi structures are also coming onto the market. As researchers are focused on creating new complex structures, the book addresses the latest processing and synthesis methods. Chapters are designed to give readers a complete picture of the Ga2O3 field and the area of devices based on Ga2O3, from their theoretical simulation, to fabrication and application. Provides an overview of the advantages of the gallium oxide materials system, the advances in in bulk and epitaxial crystal growth, device design and processing Reviews the most relevant applications, including photodetectors, FETs, FINFETs, MOSFETs, sensors, catalytic applications, and more Addresses materials properties, including structural, mechanical, electrical, optical, surface and contact

Author : Samuel Vasconcelos Araújo
Publisher : kassel university press GmbH
Page : 238 pages
File Size : 52,8 Mb
Release : 2013-06-13
Category : Semiconductors
ISBN : 9783862194865

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On the Perspectives of Wide-Band Gap Power Devices in Electronic-Based Power Conversion for Renewable Systems by Samuel Vasconcelos Araújo Pdf