Chemical Mechanical Planarization Vi

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Chemical Mechanical Planarization VI

Author : Sudipta Seal
Publisher : The Electrochemical Society
Page : 370 pages
File Size : 51,7 Mb
Release : 2003
Category : Technology & Engineering
ISBN : 1566774047

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Chemical Mechanical Planarization VI by Sudipta Seal Pdf

Chemical Mechanical Planarization IV

Author : R. L. Opila
Publisher : The Electrochemical Society
Page : 350 pages
File Size : 49,9 Mb
Release : 2001
Category : Technology & Engineering
ISBN : 1566772931

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Chemical Mechanical Planarization IV by R. L. Opila Pdf

Advances in Chemical Mechanical Planarization (CMP)

Author : Suryadevara Babu
Publisher : Woodhead Publishing
Page : 536 pages
File Size : 42,9 Mb
Release : 2016-01-09
Category : Technology & Engineering
ISBN : 9780081002186

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Advances in Chemical Mechanical Planarization (CMP) by Suryadevara Babu Pdf

Advances in Chemical Mechanical Planarization (CMP) provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The technology has grown to encompass the removal and planarization of multiple metal and dielectric materials and layers both at the device and the metallization levels, using different tools and parameters, requiring improvements in the control of topography and defects. This important book offers a systematic review of fundamentals and advances in the area. Part One covers CMP of dielectric and metal films, with chapters focusing on the use of particular techniques and processes, and on CMP of particular various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. Part Two addresses consumables and process control for improved CMP, and includes chapters on the preparation and characterization of slurry, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes, and approaches for defection characterization, mitigation, and reduction. Considers techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for particular materials Addresses consumables and process control for improved CMP

Microelectronic Applications of Chemical Mechanical Planarization

Author : Yuzhuo Li
Publisher : John Wiley & Sons
Page : 760 pages
File Size : 40,6 Mb
Release : 2007-12-04
Category : Technology & Engineering
ISBN : 0470180897

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Microelectronic Applications of Chemical Mechanical Planarization by Yuzhuo Li Pdf

An authoritative, systematic, and comprehensive description of current CMP technology Chemical Mechanical Planarization (CMP) provides the greatest degree of planarization of any known technique. The current standard for integrated circuit (IC) planarization, CMP is playing an increasingly important role in other related applications such as microelectromechanical systems (MEMS) and computer hard drive manufacturing. This reference focuses on the chemical aspects of the technology and includes contributions from the foremost experts on specific applications. After a detailed overview of the fundamentals and basic science of CMP, Microelectronic Applications of Chemical Mechanical Planarization: * Provides in-depth coverage of a wide range of state-of-the-art technologies and applications * Presents information on new designs, capabilities, and emerging technologies, including topics like CMP with nanomaterials and 3D chips * Discusses different types of CMP tools, pads for IC CMP, modeling, and the applicability of tribometrology to various aspects of CMP * Covers nanotopography, CMP performance and defect profiles, CMP waste treatment, and the chemistry and colloidal properties of the slurries used in CMP * Provides a perspective on the opportunities and challenges of the next fifteen years Complete with case studies, this is a valuable, hands-on resource for professionals, including process engineers, equipment engineers, formulation chemists, IC manufacturers, and others. With systematic organization and questions at the end of each chapter to facilitate learning, it is an ideal introduction to CMP and an excellent text for students in advanced graduate courses that cover CMP or related semiconductor manufacturing processes.

Chemical-Mechanical Planarization: Volume 767

Author : Duane S. Boning
Publisher : Unknown
Page : 376 pages
File Size : 53,8 Mb
Release : 2003-08-27
Category : Technology & Engineering
ISBN : UOM:39015059971484

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Chemical-Mechanical Planarization: Volume 767 by Duane S. Boning Pdf

Chemical-mechanical planarization (CMP) has emerged as a critical fabrication technology for advanced integrated circuits. Even as the applications of CMP have diversified and we have begun to understand aspects of the physics and chemistry of the process, a new generation of CMP innovations is unfolding. New slurries and consumables are under development. New applications to novel devices continue to appear. This book, the most recent in a successful series on CMP, offers a review of the advances to date and provides a comprehensive discussion of the future challenges that must be overcome. Presentations from academia, government labs and industry are featured. Topics include; CMP modeling; CMP science; CMP slurries and particles for planarization of copper, oxide, and other materials; planarization applications including shallow trench isolation (STI), copper damascene, and novel devices and CMP integration.

Chemical-Mechanical Planarization: Volume 867

Author : A. Kumar
Publisher : Unknown
Page : 330 pages
File Size : 41,8 Mb
Release : 2005-07-19
Category : Technology & Engineering
ISBN : UOM:39015061024959

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Chemical-Mechanical Planarization: Volume 867 by A. Kumar Pdf

Technology requirements associated with the progressive scaling of devices for future technology nodes, coupled with the aggressive introduction of new materials, places tremendous demands on chemical-mechanical polishing. The goal of this 2005 book, which is part of a popular series from MRS, is to bring together experts from a broad spectrum of research and technology groups currently working on CMP, to review advances made, and to offer a comprehensive discussion of future challenges that must be overcome. The book shows trends in the development of consumables, process modules, tool designs, process integration, modeling, defect characterization, and metrology. Topics include: planarization processes and applications; consumables -CMP pads and slurries; CMP equipment and metrology; and CMP modeling and simulation.

Chemical Mechanical Planarization of Microelectronic Materials

Author : Joseph M. Steigerwald,Shyam P. Murarka,Ronald J. Gutmann
Publisher : John Wiley & Sons
Page : 337 pages
File Size : 42,6 Mb
Release : 2008-09-26
Category : Science
ISBN : 9783527617753

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Chemical Mechanical Planarization of Microelectronic Materials by Joseph M. Steigerwald,Shyam P. Murarka,Ronald J. Gutmann Pdf

Chemical Mechanical Planarization (CMP) plays an important role in today's microelectronics industry. With its ability to achieve global planarization, its universality (material insensitivity), its applicability to multimaterial surfaces, and its relative cost-effectiveness, CMP is the ideal planarizing medium for the interlayered dielectrics and metal films used in silicon integrated circuit fabrication. But although the past decade has seen unprecedented research and development into CMP, there has been no single-source reference to this rapidly emerging technology-until now. Chemical Mechanical Planarization of Microelectronic Materials provides engineers and scientists working in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP. Authors Steigerwald, Murarka, and Gutmann-all leading CMP pioneers-provide a historical overview of CMP, explain the various chemical and mechanical concepts involved, describe CMP materials and processes, review the latest scientific data on CMP worldwide, and offer examples of its uses in the microelectronics industry. They provide detailed coverage of the CMP of various materials used in the making of microcircuitry: tungsten, aluminum, copper, polysilicon, and various dielectric materials, including polymers. The concluding chapter describes post-CMP cleaning techniques, and most chapters feature problem sets to assist readers in developing a more practical understanding of CMP. The only comprehensive reference to one of the fastest growing integrated circuit manufacturing technologies, Chemical Mechanical Planarization of Microelectronic Materials is an important resource for research scientists and engineers working in the microelectronics industry. An indispensable resource for scientists and engineers working in the microelectronics industry Chemical Mechanical Planarization of Microelectronic Materials is the only comprehensive single-source reference to one of the fastest growing integrated circuit manufacturing technologies. It provides engineers and scientists who work in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP, including: * The history of CMP * Chemical and mechanical underpinnings of CMP * CMP materials and processes * Applications of CMP in the microelectronics industry * The CMP of tungsten, aluminum, copper, polysilicon, and various dielectrics, including polymers used in integrated circuit fabrication * Post-CMP cleaning techniques * Chapter-end problem sets are also included to assist readers in developing a practical understanding of CMP.

Advances in Chemical Mechanical Planarization (CMP)

Author : Babu Suryadevara
Publisher : Woodhead Publishing
Page : 650 pages
File Size : 55,5 Mb
Release : 2021-09-10
Category : Technology & Engineering
ISBN : 9780128218198

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Advances in Chemical Mechanical Planarization (CMP) by Babu Suryadevara Pdf

Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. Reviews the most relevant techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for current and emerging materials Addresses consumables and process control for improved CMP, including post-CMP

Advances and Challenges in Chemical Mechanical Planarization: Volume 991

Author : Gerfried Zwicker,Christopher Borst,Laertis Economikos,Ara Philipossian
Publisher : Cambridge University Press
Page : 0 pages
File Size : 46,9 Mb
Release : 2007-11-13
Category : Technology & Engineering
ISBN : 1558999515

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Advances and Challenges in Chemical Mechanical Planarization: Volume 991 by Gerfried Zwicker,Christopher Borst,Laertis Economikos,Ara Philipossian Pdf

Chemical mechanical planarization (CMP) has been a leading-edge technology in semiconductor processing for the past 15−20 years. A successful CMP process is based in fundamental science across the disciplines of mechanical engineering, chemical engineering, colloid science, materials science and chemistry. Traditionally, the MRS Spring Meeting serves as a nexus for multidisciplinary interaction and discussion between CMP researchers in both industry and academia. The papers in this book are from the 2007 MRS Spring Meeting and address the fluid and wear mechanics that occur when using CMP tools and pad/slurry consumables, as well as the surface mechanisms required for effective post-CMP cleaning. It also focuses on new successes and challenges in technologies such as electrochemical mechanical planarization (eCMP), three-dimensional integration and advanced CMP process modeling and control strategies.

Chemical Mechanical Planarization in IC Device Manufacturing III

Author : Robert Leon Opila
Publisher : The Electrochemical Society
Page : 664 pages
File Size : 52,9 Mb
Release : 2000
Category : Technology & Engineering
ISBN : 1566772605

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Chemical Mechanical Planarization in IC Device Manufacturing III by Robert Leon Opila Pdf

This volume contains the proceedings of the third international symposium on Chemical Mechanical Planarization integrated circuit device manufacturing held at the 196th Meeting of the Electrochemical Society in Honolulu, Hawaii. ( October 20 -22 1999).

Chemical Mechanical Polishing in Silicon Processing

Author : Anonim
Publisher : Academic Press
Page : 307 pages
File Size : 50,9 Mb
Release : 1999-10-29
Category : Technology & Engineering
ISBN : 9780080864617

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Chemical Mechanical Polishing in Silicon Processing by Anonim Pdf

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications

Author : Yosi Shacham-Diamand,Tetsuya Osaka,Madhav Datta,Takayuki Ohba
Publisher : Springer Science & Business Media
Page : 552 pages
File Size : 40,8 Mb
Release : 2009-09-19
Category : Science
ISBN : 9780387958682

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Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications by Yosi Shacham-Diamand,Tetsuya Osaka,Madhav Datta,Takayuki Ohba Pdf

In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.

Chemical Mechanical Polishing 10

Author : G. Banerjee
Publisher : The Electrochemical Society
Page : 145 pages
File Size : 45,9 Mb
Release : 2009-05
Category : Science
ISBN : 9781566777230

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Chemical Mechanical Polishing 10 by G. Banerjee Pdf

The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Chemical Mechanical Polishing 10¿, held during the 215th meeting of The Electrochemical Society, in San Francisco, California from May 24 to 29, 2009.

Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses

Author : Christopher Lyle Borst,William N. Gill,Ronald J. Gutmann
Publisher : Springer Science & Business Media
Page : 235 pages
File Size : 43,8 Mb
Release : 2013-11-27
Category : Technology & Engineering
ISBN : 9781461511656

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Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses by Christopher Lyle Borst,William N. Gill,Ronald J. Gutmann Pdf

As semiconductor manufacturers implement copper conductors in advanced interconnect schemes, research and development efforts shift toward the selection of an insulator that can take maximum advantage of the lower power and faster signal propagation allowed by copper interconnects. One of the main challenges to integrating a low-dielectric constant (low-kappa) insulator as a replacement for silicon dioxide is the behavior of such materials during the chemical-mechanical planarization (CMP) process used in Damascene patterning. Low-kappa dielectrics tend to be softer and less chemically reactive than silicon dioxide, providing significant challenges to successful removal and planarization of such materials. The focus of this book is to merge the complex CMP models and mechanisms that have evolved in the past decade with recent experimental results with copper and low-kappa CMP to develop a comprehensive mechanism for low- and high-removal-rate processes. The result is a more in-depth look into the fundamental reaction kinetics that alter, selectively consume, and ultimately planarize a multi-material structure during Damascene patterning.