Cmos Rf Modeling Characterization And Applications

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CMOS RF Modeling, Characterization and Applications

M. Jamal Deen,Tor A. Fjeldly
CMOS RF Modeling Characterization and Applications Book PDF

Author : M. Jamal Deen,Tor A. Fjeldly
Publisher : World Scientific
Page : 426 pages
File Size : 47,5 Mb
Release : 2002
Category : Science
ISBN : 9810249055

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CMOS RF Modeling, Characterization and Applications by M. Jamal Deen,Tor A. Fjeldly Pdf

CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

Device Modeling for Analog and RF CMOS Circuit Design

Trond Ytterdal,Yuhua Cheng,Tor A. Fjeldly
Device Modeling for Analog and RF CMOS Circuit Design Book PDF

Author : Trond Ytterdal,Yuhua Cheng,Tor A. Fjeldly
Publisher : John Wiley & Sons
Page : 306 pages
File Size : 42,9 Mb
Release : 2003-08-01
Category : Technology & Engineering
ISBN : 9780470864340

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Device Modeling for Analog and RF CMOS Circuit Design by Trond Ytterdal,Yuhua Cheng,Tor A. Fjeldly Pdf

Bridges the gap between device modelling and analog circuit design. Includes dedicated software enabling actual circuit design. Covers the three significant models: BSIM3, Model 9 &, and EKV. Presents practical guidance on device development and circuit implementation. The authors offer a combination of extensive academic and industrial experience.

Nanometer CMOS

Juin J. Liou,Frank Schwierz,Hei Wong
Nanometer CMOS Book PDF

Author : Juin J. Liou,Frank Schwierz,Hei Wong
Publisher : CRC Press
Page : 268 pages
File Size : 40,7 Mb
Release : 2010-02-28
Category : Science
ISBN : 9781466511705

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Nanometer CMOS by Juin J. Liou,Frank Schwierz,Hei Wong Pdf

This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.

Characterization and Modeling of SOI RF Integrated Components

Morin Dehan
Characterization and Modeling of SOI RF Integrated Components Book PDF

Author : Morin Dehan
Publisher : Presses univ. de Louvain
Page : 238 pages
File Size : 50,9 Mb
Release : 2003
Category : Science
ISBN : 2930344393

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Characterization and Modeling of SOI RF Integrated Components by Morin Dehan Pdf

The boom of mobile communications leads to an increasing request of low cost and low power mixed mode integrated circuits. Maturity of SOI technology, and recent progresses of MOSFET's microwave performances, explain the success of silicon as compared to III-V technologies for low-cost multigigahertz analog applications. The design of efficient circuits requires accurate, wide-band models for both active and passive elements. Within this frame, passive and active components fabricated in SOI technologies have been studied. Various topologies of integrated transmission lines, like Coplanar Waveguides or thin film microstrip lines, have been analyzed. Also, a new physical model of integrated inductors has been developed. This model, based on a coupled line analysis of square spiral inductors, is scalable and independent of the technology used. Inductors with various spacing between strips, conductor widths, or number of turns can be simulated on different multi-layered substrates. Each layer that composes the substrate is defined using its electrical properties (permittivity, permeability, conductivity). The performances of integrated sub-micron MOSFETs are analyzed. New alternative structures of transistor (the Graded Channel MOSFET and the Dynamic Threshold MOSFET) are proposed to increase the performances of a CMOS technology for for analog, low power, low voltage, and microwave applications. They are studied from Low to High frequency. The graded channel MOSFET is an asymmetric doped channel MOSFET's which bring solutions for the problems of premature drain break-down, hot carrier effects, and threshold voltage (Vth) roll-off issues in deep submicrometer devices. The GCMOS processing is fully compatible with the conventional SOI MOSFET process flow, with no additional steps needed. The dynamic threshold voltage MOS is a MOS transistor for which the gate and the body channel are tied together. All DTMOS electrical properties can be deduced from standard MOS theory by introducing Vbs = Vgs. The main advantage of DTMOS over conventional MOS is its higher drive current at low bias conditions. To keep the body to source current as low as possible, the body bias voltage must be kept lower than 0.7 V. It seems obvious that the DTMOS transistor is an attractive component for low voltage applications.

CMOS Low Noise Amplifiers for Single and Multiband Applications: A Comprehensive Design Approach

Norlaili Mohd Noh, Farshad Eshghabadi, Arjuna Marzuki
CMOS Low Noise Amplifiers for Single and Multiband Applications A Comprehensive Design Approach Book PDF

Author : Norlaili Mohd Noh, Farshad Eshghabadi, Arjuna Marzuki
Publisher : Penerbit USM
Page : 481 pages
File Size : 54,7 Mb
Release : 2023-10-11
Category : Technology & Engineering
ISBN : 9789674617653

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CMOS Low Noise Amplifiers for Single and Multiband Applications: A Comprehensive Design Approach by Norlaili Mohd Noh, Farshad Eshghabadi, Arjuna Marzuki Pdf

This book provides comprehensive knowledge, aimed at practicing integrated circuit design engineer or researcher, to learn and design a low noise amplifier (LNA) for single and multiband applications. The content is structured in a way so that even a beginner can follow the design method easily. This book features the following characteristics: different types of LNA designs (with key building blocks) are discussed, and detailed analysis is given for each LNA design, which covers from the fundamental and principal knowledge to the justification of the design approach. Detailed design approaches are using 180 nm and 130nm CMOS technologies, purposely presented in this manner to give exposure to the design of LNA under different technologies. The LNAs in this book are designed for GSM, WCDMA and WLAN standards, but the same method can be used for other frequencies of operation. Comprehensive analyses on the extreme or corner condition effects are highlighted. Besides, detailed derivation of equations relating to the parameters of the LNA’s performance metrics help LNA designers in understanding how the performance metrics of the LNA can be optimized to meet the desired specification. Electromagnetic analyses using Sonnet, an electromagnetic tool able to replace the conventional post-layout simulation with resistance and capacitance parasitic extraction for more accurate frequency performance prediction are presented. The electromagnetic method is proposed to be used in the LNA design as it can accurately predict the LNA’s performance before tape-out for first-pass fabrication. MATLAB codes are provided to generate important S-parameters and noise figure values.

Design of CMOS RF Integrated Circuits and Systems

Kiat Seng Yeo,Manh Anh Do,Chirn Chye Boon
Design of CMOS RF Integrated Circuits and Systems Book PDF

Author : Kiat Seng Yeo,Manh Anh Do,Chirn Chye Boon
Publisher : World Scientific Publishing Company
Page : 360 pages
File Size : 50,8 Mb
Release : 2010-03-24
Category : Technology & Engineering
ISBN : 9789813107472

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Design of CMOS RF Integrated Circuits and Systems by Kiat Seng Yeo,Manh Anh Do,Chirn Chye Boon Pdf

This book provides the most comprehensive and in-depth coverage of the latest circuit design developments in RF CMOS technology. It is a practical and cutting-edge guide, packed with proven circuit techniques and innovative design methodologies for solving challenging problems associated with RF integrated circuits and systems. This invaluable resource features a collection of the finest design practices that may soon drive the system-on-chip revolution. Using this book's state-of-the-art design techniques, one can apply existing technologies in novel ways and to create new circuit designs for the future.

Design of CMOS RF Integrated Circuits and Systems

Kiat Seng Yeo,Manh Anh Do,Chirn Chye Boon
Design of CMOS RF Integrated Circuits and Systems Book PDF

Author : Kiat Seng Yeo,Manh Anh Do,Chirn Chye Boon
Publisher : World Scientific
Page : 358 pages
File Size : 54,5 Mb
Release : 2010
Category : Technology & Engineering
ISBN : 9789814271561

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Design of CMOS RF Integrated Circuits and Systems by Kiat Seng Yeo,Manh Anh Do,Chirn Chye Boon Pdf

This book provides the most comprehensive and in-depth coverage of the latest circuit design developments in RF CMOS technology. It is a practical and cutting-edge guide, packed with proven circuit techniques and innovative design methodologies for solving challenging problems associated with RF integrated circuits and systems. This invaluable resource features a collection of the finest design practices that may soon drive the system-on-chip revolution. Using this book's state-of-the-art design techniques, one can apply existing technologies in novel ways and to create new circuit designs for the future.

Linear CMOS RF Power Amplifiers for Wireless Applications

Paulo Augusto Dal Fabbro,Maher Kayal
Linear CMOS RF Power Amplifiers for Wireless Applications Book PDF

Author : Paulo Augusto Dal Fabbro,Maher Kayal
Publisher : Springer Science & Business Media
Page : 220 pages
File Size : 46,5 Mb
Release : 2010-06-22
Category : Technology & Engineering
ISBN : 9789048193615

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Linear CMOS RF Power Amplifiers for Wireless Applications by Paulo Augusto Dal Fabbro,Maher Kayal Pdf

Advances in electronics have pushed mankind to create devices, ranging from - credible gadgets to medical equipment to spacecraft instruments. More than that, modern society is getting used to—if not dependent on—the comfort, solutions, and astonishing amount of information brought by these devices. One ?eld that has continuously bene?tted from those advances is the radio frequency integrated c- cuit (RFIC) design, which in its turn has promoted countless bene?ts to the mankind as a payback. Wireless communications is one prominent example of what the - vances in electronics have enabled and their consequences to our daily life. How could anyone back in the eighties think of the possibilities opened by the wireless local area networks (WLANs) that can be found today in a host of places, such as public libraries, coffee shops, trains, to name just a few? How can a youngster, who lives this true WLAN experience nowadays, imagine a world without it? This book dealswith the design oflinearCMOS RF PowerAmpli?ers(PAs). The RF PA is a very important part of the RF transceiver, the device that enables wireless communications. Two important aspects that are key to keep the advances in RF PA design at an accelerate pace are treated: ef?ciency enhancement and frequen- tunable capability. For this purpose, the design of two different integrated circuits realizedina0. 11μmtechnologyispresented,eachoneaddressingadifferentaspect. With respect to ef?ciency enhancement, the design of a dynamic supply RF power ampli?er is treated, making up the material of Chaps. 2 to 4.

GaN-Based Materials and Devices

M S Shur,R F Davis
GaN Based Materials and Devices Book PDF

Author : M S Shur,R F Davis
Publisher : World Scientific
Page : 300 pages
File Size : 40,8 Mb
Release : 2004-05-07
Category : Technology & Engineering
ISBN : 9789814482691

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GaN-Based Materials and Devices by M S Shur,R F Davis Pdf

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology. Contents:Materials:Materials Properties of Nitrides. Summary (S L Rumyantsev et al.)Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy (A M Roskowski et al.)Cracking of GaN Films (E V Etzkorn & D R Clarke)Transport and Noise Properties:Quasi-Ballistic and Overshoot Transport in Group III-Nitrides (K W Kim et al.)High Field Transport in AIN (R Collazo et al.)Generation-Recombination Noise in GaN-Based Devices (S L Rumyantsev et al.)Devices:Insulated Gate III-N Heterostructure Field-Effect Transistors (G Simin et al.)High Voltage AlGaN/GaN Heterojunction Transistors (L S McCarthy et al.)Etched Aperture GaN Cavet Through Photoelectrochemical Wet Etching (Y Gao et al.)and other papers Readership: Undergraduates, graduate students, academics, researchers and practitioners in semiconductor science and materials engineering. Keywords:Nitrides;Power Switches;Substrates;Device Fabrication;TransistorsKey Features:Unique feature: extensive coverage of issues ranging from materials growth and characterization to devices

Precision Measurement of Microwave Thermal Noise

James Randa
Precision Measurement of Microwave Thermal Noise Book PDF

Author : James Randa
Publisher : John Wiley & Sons
Page : 180 pages
File Size : 44,5 Mb
Release : 2022-11-22
Category : Technology & Engineering
ISBN : 9781119910091

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Precision Measurement of Microwave Thermal Noise by James Randa Pdf

Precision Measurement of Microwave Comprehensive resource covering the foundations and analysis of precision noise measurements with a detailed treatment of their uncertainties Precision Measurement of Microwave Thermal Noise presents the basics of precise measurements of thermal noise at microwave frequencies and guides readers through how to evaluate the uncertainties in such measurement. The focus is on measurement methods used at the U.S. National Institute of Standards and Technology (NIST), but the general principles and methods are useful in a wide range of applications. Readers will learn how to perform accurate microwave noise measurements using the respected author’s expertise of calculations to aid understanding of the challenges and solutions. The text covers the background required for the analysis of the measurements and the standards employed to calibrate radiofrequency and microwave radiometers. It also covers measurements of noise temperature (power) and the noise characteristics of amplifiers and transistors. In addition to the usual room-temperature two-port devices, cryogenic devices and multiport amplifiers are also discussed. Finally, the connection of these lab-based measurements to remote-sensing measurement (especially from space) is considered, and possible contributions of the lab-based measurements to remote-sensing applications are discussed. Specific topics and concepts covered in the text include: Noise-temperature standards, covering ambient standards, hot (oven) standards, cryogenic standards, and other standards and noise sources Amplifier noise, covering definition of noise parameters, measurement of noise parameters, uncertainty analysis for noise-parameter measurements, and simulations and strategies On-wafer noise measurements, covering on-wafer microwave formalism, noise temperature, on-wafer noise-parameter measurements, and uncertainties Multiport amplifiers, covering formalism and noise matrix, definition of noise figure for multiports, and degradation of signal-to-noise ratio Containing some introductory material, Precision Measurement of Microwave Thermal Noise is an invaluable resource on the subject for advanced students and all professionals working in (or entering) the field of microwave noise measurements, be it in a standards lab, a commercial lab, or academic research.

Microwave De-embedding

Giovanni Crupi,Dominique Schreurs
Microwave De embedding Book PDF

Author : Giovanni Crupi,Dominique Schreurs
Publisher : Academic Press
Page : 481 pages
File Size : 43,6 Mb
Release : 2013-11-09
Category : Technology & Engineering
ISBN : 9780124045927

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Microwave De-embedding by Giovanni Crupi,Dominique Schreurs Pdf

This groundbreaking book is the first to give an introduction to microwave de-embedding, showing how it is the cornerstone for waveform engineering. The authors of each chapter clearly explain the theoretical concepts, providing a foundation that supports linear and non-linear measurements, modelling and circuit design. Recent developments and future trends in the field are covered throughout, including successful strategies for low-noise and power amplifier design. This book is a must-have for those wishing to understand the full potential of the microwave de-embedding concept to achieve successful results in the areas of measurements, modelling, and design at high frequencies. With this book you will learn: The theoretical background of high-frequency de-embedding for measurements, modelling, and design Details on applying the de-embedding concept to the transistor’s linear, non-linear, and noise behaviour The impact of de-embedding on low-noise and power amplifier design The recent advances and future trends in the field of high-frequency de-embedding Presents the theory and practice of microwave de-embedding, from the basic principles to recent advances and future trends Written by experts in the field, all of whom are leading researchers in the area Each chapter describes theoretical background and gives experimental results and practical applications Includes forewords by Giovanni Ghione and Stephen Maas

Advanced Device Modeling and Simulation

Tibor Grasser
Advanced Device Modeling and Simulation Book PDF

Author : Tibor Grasser
Publisher : World Scientific
Page : 216 pages
File Size : 49,6 Mb
Release : 2003-10-17
Category : Technology & Engineering
ISBN : 9789814485012

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Advanced Device Modeling and Simulation by Tibor Grasser Pdf

Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulation. As such it presents extensive reviews and original research by outstanding scientists. The bulk of the book is concerned with the theory of classical and quantum-mechanical transport modeling, based on macroscopic, spherical harmonics and Monte Carlo methods. Contents:Modeling Electron Transport in MOSFET Devices: Evolution and State of the Art (A Abramo)Particle Models for Device Simulation (H Kosina & M Nedjalkov)Effective Potentials and Quantum Fluid Models: A Thermodynamic Approach (C Ringhofer et al.)Self-Consistent Modeling of MOSFET Quantum Effects by Solving the Schrödinger and Boltzmann System of Equations (N Goldsman & C-K Huang)Hydrodynamic Modeling of RF Noise for Silicon-Based Devices (C Jungemann et al.)Carbon Nanotubes as a Perfectly Conducting Cylinder (T Ando)Hot Carrier Effects Within Macroscopic Transport Models (T Grasser et al.) Readership: Upper level undergraduates, graduate students, academics/lecturers, researchers and industrialists in microelectronics and semiconductor science. Keywords:Device Simulation;Monte Carlo Method;Wigner-Boltzmann Equation;Spherical Harmonics;Carbon Nanotubes;Quantum Effects

Advances in Imaging and Electron Physics

Anonim
Advances in Imaging and Electron Physics Book PDF

Author : Anonim
Publisher : Academic Press
Page : 484 pages
File Size : 51,7 Mb
Release : 2012-11-01
Category : Technology & Engineering
ISBN : 9780123946362

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Advances in Imaging and Electron Physics by Anonim Pdf

Advances in Imaging and Electron Physics merges two long-running serials--Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. This series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains. Contributions from leading authorities Informs and updates on all the latest developments in the field

Electronics

Michael Olorunfunmi Kolawole
Electronics Book PDF

Author : Michael Olorunfunmi Kolawole
Publisher : CRC Press
Page : 440 pages
File Size : 45,6 Mb
Release : 2020-06-15
Category : Technology & Engineering
ISBN : 9781000089066

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Electronics by Michael Olorunfunmi Kolawole Pdf

This book gives clear explanations of the technical aspects of electronics engineering from basic classical device formulations to the use of nanotechnology to develop efficient quantum electronic systems. As well as being up to date, this book provides a broader range of topics than found in many other electronics books. This book is written in a clear, accessible style and covers topics in a comprehensive manner. This book’s approach is strongly application-based with key mathematical techniques introduced, helpful examples used to illustrate the design procedures, and case studies provided where appropriate. By including the fundamentals as well as more advanced techniques, the author has produced an up-to-date reference that meets the requirements of electronics and communications students and professional engineers. Features Discusses formulation and classification of integrated circuits Develops a hierarchical structure of functional logic blocks to build more complex digital logic circuits Outlines the structure of transistors (bipolar, JFET, MOSFET or MOS, CMOS), their processing techniques, their arrangement forming logic gates and digital circuits, optimal pass transistor stages of buffered chain, sources and types of noise, and performance of designed circuits under noisy conditions Explains data conversion processes, choice of the converter types, and inherent errors Describes electronic properties of nanomaterials, the crystallites’ size reduction effect, and the principles of nanoscale structure fabrication Outlines the principles of quantum electronics leading to the development of lasers, masers, reversible quantum gates, and circuits and applications of quantum cells and fabrication methods, including self-assembly (quantum-dot cellular automata) and tunneling (superconducting circuits), and describes quantum error-correction techniques Problems are provided at the end of each chapter to challenge the reader’s understanding

Terahertz Sensing Technology: Emerging scientific applications & novel device concepts

Dwight L. Woolard,William R. Loerop,Michael Shur
Terahertz Sensing Technology Emerging scientific applications novel device concepts Book PDF

Author : Dwight L. Woolard,William R. Loerop,Michael Shur
Publisher : World Scientific
Page : 420 pages
File Size : 44,8 Mb
Release : 2003
Category : Technology & Engineering
ISBN : 9789812386113

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Terahertz Sensing Technology: Emerging scientific applications & novel device concepts by Dwight L. Woolard,William R. Loerop,Michael Shur Pdf

The last research frontier in high frequency electronics lies in the so-called terahertz (or submillimeter wave) regime, between the traditional microwave and the infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book provides a detailed review of the new THz frequency technological developments that are emerging across a wide spectrum of sensing and technology areas.Volume II presents cutting edge results in two primary areas: (1) research that is attempting to establish THz-frequency sensing as a new characterization tool for chemical, biological and semiconductor materials, and (2) theoretical and experimental efforts to define new device concepts within the ?THz gap?.