Characterization And Modeling Of Soi Rf Integrated Components

Author : Morin Dehan
Publisher : Presses univ. de Louvain
Page : 238 pages
File Size : 43,6 Mb
Release : 2003
Category : Science
ISBN : 2930344393

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Characterization and Modeling of SOI RF Integrated Components by Morin Dehan Pdf

The boom of mobile communications leads to an increasing request of low cost and low power mixed mode integrated circuits. Maturity of SOI technology, and recent progresses of MOSFET's microwave performances, explain the success of silicon as compared to III-V technologies for low-cost multigigahertz analog applications. The design of efficient circuits requires accurate, wide-band models for both active and passive elements. Within this frame, passive and active components fabricated in SOI technologies have been studied. Various topologies of integrated transmission lines, like Coplanar Waveguides or thin film microstrip lines, have been analyzed. Also, a new physical model of integrated inductors has been developed. This model, based on a coupled line analysis of square spiral inductors, is scalable and independent of the technology used. Inductors with various spacing between strips, conductor widths, or number of turns can be simulated on different multi-layered substrates. Each layer that composes the substrate is defined using its electrical properties (permittivity, permeability, conductivity). The performances of integrated sub-micron MOSFETs are analyzed. New alternative structures of transistor (the Graded Channel MOSFET and the Dynamic Threshold MOSFET) are proposed to increase the performances of a CMOS technology for for analog, low power, low voltage, and microwave applications. They are studied from Low to High frequency. The graded channel MOSFET is an asymmetric doped channel MOSFET's which bring solutions for the problems of premature drain break-down, hot carrier effects, and threshold voltage (Vth) roll-off issues in deep submicrometer devices. The GCMOS processing is fully compatible with the conventional SOI MOSFET process flow, with no additional steps needed. The dynamic threshold voltage MOS is a MOS transistor for which the gate and the body channel are tied together. All DTMOS electrical properties can be deduced from standard MOS theory by introducing Vbs = Vgs. The main advantage of DTMOS over conventional MOS is its higher drive current at low bias conditions. To keep the body to source current as low as possible, the body bias voltage must be kept lower than 0.7 V. It seems obvious that the DTMOS transistor is an attractive component for low voltage applications.

Author : M. Jamal Deen,Tor A. Fjeldly
Publisher : World Scientific
Page : 426 pages
File Size : 40,6 Mb
Release : 2002
Category : Science
ISBN : 9810249055

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CMOS RF Modeling, Characterization and Applications by M. Jamal Deen,Tor A. Fjeldly Pdf

CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

Author : Egidio Ragonese,Angelo Scuderi,Tonio Biondi,Giuseppe Palmisano
Publisher : CRC Press
Page : 169 pages
File Size : 52,5 Mb
Release : 2010-11-15
Category : Technology & Engineering
ISBN : 1420088459

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Integrated Inductors and Transformers by Egidio Ragonese,Angelo Scuderi,Tonio Biondi,Giuseppe Palmisano Pdf

With the ability to improve performance, reduce fabrication costs, and increase integration levels of both RX and TX sections of the RF/mm-wave front-end, passive inductive components have experienced extraordinary growth in ICs. Therefore, a fundamental understanding of monolithic inductors and transformers has become essential for all process engineers and circuit designers. Supplying balanced coverage of the technology and applications, Integrated Inductors and Transformers: Characterization, Design and Modeling for RF and mm-Wave Applications provides a complete overview of the design, fabrication, and modeling of monolithic inductors and transformers. It considers the underlying physics and theoretical background of inductive components fabricated on a semiconductor substrate. Deals with both inductors and transformers and their application in RF/mm-wave ICs Focuses on silicon-based inductive components and their performance optimization in RF/mm-wave ICs Provides insight into lumped scalable modeling of both inductors and transformers Covers concepts of system calibration, test pattern parasitics, and de-embedding for on-wafer measurements of passive devices Illustrates practical applications of theoretical concepts by means of meaningful circuit design examples Highlighting the pressing requirements of the wireless market and evolving communication standards, the text provides a comprehensive review of recently developed modeling techniques and applications. It also includes helpful rule-of-thumb design guidelines and commonly employed optimization strategies to help kick-start your design, fabrication, and modeling efforts.

Author : Jeffrey L. Hilbert
Publisher : CRC Press
Page : 330 pages
File Size : 55,9 Mb
Release : 2018-09-03
Category : Technology & Engineering
ISBN : 9781498718929

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Tunable RF Components and Circuits by Jeffrey L. Hilbert Pdf

An Industry Perspective on Key Tunable Technologies and Applications Tunable RF Components and Circuits: Applications in Mobile Handsets provides a technical introduction to the state of the art in tunable radio frequency (RF) components, circuits, and applications and discusses the foundational work that has been done to date. Leading practitioners in the field share their expertise on tunable devices in mobile handset applications. Through these practical viewpoints, readers discover how to use tunable RF techniques and devices to develop successful product designs. A substantial portion of the book focuses on antennas and antenna tuning, reflecting the dominance of the antenna tuning application in today’s commercial market for tunable RF. The book explains how RF-microelectromechanical systems (RF-MEMS), barium strontium titinate (BST), silicon-on-insulator (SOI) field effect transistors (FETs), and high-performance complementary metal oxide semiconductors (CMOS) are used as enabling technologies for tunable functions in current and next-generation radio architectures. The book also describes power amplifier envelope tracking, an emerging and important technique for improving efficiency; presents a network operator’s perspective on the evolution of the handset front end; and explores emerging approaches to production testing of wireless devices.

Author : Snezana Jenei
Publisher : Unknown
Page : 256 pages
File Size : 49,7 Mb
Release : 2003
Category : Bipolar integrated circuits
ISBN : STANFORD:36105111529934

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Characterization and Optimization of the RF Performances of Analog Components in CMOS and BiCMOs Technologies by Snezana Jenei Pdf

Author : Badih El-Kareh,Lou N. Hutter
Publisher : Springer
Page : 648 pages
File Size : 53,6 Mb
Release : 2019-08-07
Category : Technology & Engineering
ISBN : 9783030150853

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Silicon Analog Components by Badih El-Kareh,Lou N. Hutter Pdf

This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science. Enables engineers to understand analog device physics, and discusses important relations between process integration, device design, component characteristics, and reliability; Describes in step-by-step fashion the components that are used in analog designs, the particular characteristics of analog components, while comparing them to digital applications; Explains the second-order effects in analog devices, and trade-offs between these effects when designing components and developing an integrated process for their manufacturing.

Author : Wladyslaw Grabinski,Bart Nauwelaers,Dominique Schreurs
Publisher : Springer Science & Business Media
Page : 298 pages
File Size : 41,5 Mb
Release : 2006-07-01
Category : Technology & Engineering
ISBN : 9781402045561

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Transistor Level Modeling for Analog/RF IC Design by Wladyslaw Grabinski,Bart Nauwelaers,Dominique Schreurs Pdf

The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.

Author : Aida Todri-Sanial,Chuan Seng Tan
Publisher : CRC Press
Page : 397 pages
File Size : 45,9 Mb
Release : 2017-12-19
Category : Technology & Engineering
ISBN : 9781498710374

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Physical Design for 3D Integrated Circuits by Aida Todri-Sanial,Chuan Seng Tan Pdf

Physical Design for 3D Integrated Circuits reveals how to effectively and optimally design 3D integrated circuits (ICs). It also analyzes the design tools for 3D circuits while exploiting the benefits of 3D technology. The book begins by offering an overview of physical design challenges with respect to conventional 2D circuits, and then each chapter delivers an in-depth look at a specific physical design topic. This comprehensive reference: Contains extensive coverage of the physical design of 2.5D/3D ICs and monolithic 3D ICs Supplies state-of-the-art solutions for challenges unique to 3D circuit design Features contributions from renowned experts in their respective fields Physical Design for 3D Integrated Circuits provides a single, convenient source of cutting-edge information for those pursuing 2.5D/3D technology.

Author : Thomas Noulis
Publisher : CRC Press
Page : 536 pages
File Size : 55,5 Mb
Release : 2018-01-09
Category : Technology & Engineering
ISBN : 9781351642781

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Noise Coupling in System-on-Chip by Thomas Noulis Pdf

Noise Coupling is the root-cause of the majority of Systems on Chip (SoC) product fails. The book discusses a breakthrough substrate coupling analysis flow and modelling toolset, addressing the needs of the design community. The flow provides capability to analyze noise components, propagating through the substrate, the parasitic interconnects and the package. Using this book, the reader can analyze and avoid complex noise coupling that degrades RF and mixed signal design performance, while reducing the need for conservative design practices. With chapters written by leading international experts in the field, novel methodologies are provided to identify noise coupling in silicon. It additionally features case studies that can be found in any modern CMOS SoC product for mobile communications, automotive applications and readout front ends.

Author : Chenming Hu,Sourabh Khandelwal,Yogesh Singh Chauhan,Thomas Mckay,Josef Watts,Juan Pablo Duarte,Pragya Kushwaha,Harshit Agarwal
Publisher : Woodhead Publishing
Page : 258 pages
File Size : 52,9 Mb
Release : 2019-05-21
Category : Technology & Engineering
ISBN : 9780081024027

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Industry Standard FDSOI Compact Model BSIM-IMG for IC Design by Chenming Hu,Sourabh Khandelwal,Yogesh Singh Chauhan,Thomas Mckay,Josef Watts,Juan Pablo Duarte,Pragya Kushwaha,Harshit Agarwal Pdf

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model. Provides a detailed discussion of the BSIM-IMG model and the industry standard simulation model for FDSOI, all presented by the developers of the model Explains the complex operation of the FDSOI device and its use of two independent control inputs Addresses the parameter extraction challenges for those using this model

Author : Anonim
Publisher : Unknown
Page : 788 pages
File Size : 48,9 Mb
Release : 2006
Category : Microwaves
ISBN : UCSD:31822032919581

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Microwave Journal by Anonim Pdf

Author : Kiat Seng Yeo,Manh Anh Do,Chirn Chye Boon
Publisher : World Scientific Publishing Company
Page : 360 pages
File Size : 44,8 Mb
Release : 2010-03-24
Category : Technology & Engineering
ISBN : 9789813107472

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Design of CMOS RF Integrated Circuits and Systems by Kiat Seng Yeo,Manh Anh Do,Chirn Chye Boon Pdf

This book provides the most comprehensive and in-depth coverage of the latest circuit design developments in RF CMOS technology. It is a practical and cutting-edge guide, packed with proven circuit techniques and innovative design methodologies for solving challenging problems associated with RF integrated circuits and systems. This invaluable resource features a collection of the finest design practices that may soon drive the system-on-chip revolution. Using this book's state-of-the-art design techniques, one can apply existing technologies in novel ways and to create new circuit designs for the future.

Author : CMOS Emerging Technologies Research
Publisher : CMOS Emerging Technologies Research
Page : 179 pages
File Size : 42,9 Mb
Release : 2014-06-19
Category : Electronic
ISBN : 9781927500507

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CMOSET 2014 Vol. 4: Optoelectronics and Microelectronics Track by CMOS Emerging Technologies Research Pdf

Presentation slides from the Plenary track at the 2014 CMOS Emerging Technologies Research conference in Grenoble, France.

Author : Alexei Nazarov,Francis Balestra,Valeriya Kilchytska,Denis Flandre
Publisher : Springer
Page : 469 pages
File Size : 42,9 Mb
Release : 2014-08-28
Category : Technology & Engineering
ISBN : 9783319088044

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Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting by Alexei Nazarov,Francis Balestra,Valeriya Kilchytska,Denis Flandre Pdf

This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nano scaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between “More Moore” and “More than Moore” are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.

Author : Mikhail Baklanov,Paul S. Ho,Ehrenfried Zschech
Publisher : John Wiley & Sons
Page : 616 pages
File Size : 44,6 Mb
Release : 2012-04-02
Category : Technology & Engineering
ISBN : 9780470662540

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Advanced Interconnects for ULSI Technology by Mikhail Baklanov,Paul S. Ho,Ehrenfried Zschech Pdf

Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.