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Defects in Microelectronic Materials and Devices by Daniel M. Fleetwood,Ronald D. Schrimpf Pdf
Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe
Microelectronic Materials and Processes by R.A. Levy Pdf
The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS!) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS!.
Reliability and Failure of Electronic Materials and Devices by Milton Ohring,Lucian Kasprzak Pdf
Reliability and Failure of Electronic Materials and Devices is a well-established and well-regarded reference work offering unique, single-source coverage of most major topics related to the performance and failure of materials used in electronic devices and electronics packaging. With a focus on statistically predicting failure and product yields, this book can help the design engineer, manufacturing engineer, and quality control engineer all better understand the common mechanisms that lead to electronics materials failures, including dielectric breakdown, hot-electron effects, and radiation damage. This new edition adds cutting-edge knowledge gained both in research labs and on the manufacturing floor, with new sections on plastics and other new packaging materials, new testing procedures, and new coverage of MEMS devices. Covers all major types of electronics materials degradation and their causes, including dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, and failure of contacts and solder joints New updated sections on "failure physics," on mass transport-induced failure in copper and low-k dielectrics, and on reliability of lead-free/reduced-lead solder connections New chapter on testing procedures, sample handling and sample selection, and experimental design Coverage of new packaging materials, including plastics and composites
This practical book shows how an understanding of structure, thermodynamics, and electrical properties can explain some of the choices of materials used in microelectronics, and can assist in the design of new materials for specific applications. It emphasizes the importance of the phase chemistry of semiconductor and metal systems for ensuring the long-term stability of new devices. The book discusses single-crystal and polycrystalline silicon, aluminium- and gold-based metallisation schemes, packaging semiconductor devices, failure analysis, and the suitability of various materials for optoelectronic devices and solar cells. It has been designed for senior undergraduates, graduates, and researchers in physics, electronic engineering, and materials science.
This practical book shows how an understanding of structure, thermodynamics, and electrical properties can explain some of the choices of materials used in microelectronics, and can assist in the design of new materials for specific applications. It emphasizes the importance of the phase chemistry of semiconductor and metal systems for ensuring the long-term stability of new devices. The book discusses single-crystal and polycrystalline silicon, aluminium- and gold-based metallisation schemes, packaging semiconductor devices, failure analysis, and the suitability of various materials for optoelectronic devices and solar cells. It has been designed for senior undergraduates, graduates, and researchers in physics, electronic engineering, and materials science.
Rare-Earth Implanted MOS Devices for Silicon Photonics by Lars Rebohle,Wolfgang Skorupa Pdf
The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications.
Fundamentals of Silicon Carbide Technology by Tsunenobu Kimoto,James A. Cooper Pdf
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Defect and Impurity Engineered Semiconductors and Devices III: Volume 719 by S. Ashok Pdf
This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.
Alex Hansen,Thomas Beyer,Ewald Moser,Laura Elisa Marcucci,Ralf Metzler,Christian F. Klingenberg,James Sauls,José W. F. Valle,Jan De Boer,Dumitru Baleanu,Lorenzo Pavesi,Bretislav Friedrich,Christine Charles,Matjaž Perc,Jasper Van Der Gucht
Author : Alex Hansen,Thomas Beyer,Ewald Moser,Laura Elisa Marcucci,Ralf Metzler,Christian F. Klingenberg,James Sauls,José W. F. Valle,Jan De Boer,Dumitru Baleanu,Lorenzo Pavesi,Bretislav Friedrich,Christine Charles,Matjaž Perc,Jasper Van Der Gucht Publisher : Frontiers Media SA Page : 186 pages File Size : 50,8 Mb Release : 2020-05-19 Category : Electronic ISBN : 9782889637096
Frontiers in Physics - 2019 Editor's Choice by Alex Hansen,Thomas Beyer,Ewald Moser,Laura Elisa Marcucci,Ralf Metzler,Christian F. Klingenberg,James Sauls,José W. F. Valle,Jan De Boer,Dumitru Baleanu,Lorenzo Pavesi,Bretislav Friedrich,Christine Charles,Matjaž Perc,Jasper Van Der Gucht Pdf
Frontiers in Physics – FPHY – is now in its eighth year. Up to last year, the journal received a slowly increasing trickle of manuscripts, and then during the summer… Boom! The number of manuscripts we receive started increasing exponentially. This is of course a signal to us who are associated with the journal that we are on the right track to build a first-rate journal spanning the entire field of physics. And it is not the only signal. We also see it in other indicators such as the number of views and downloads, Impact Factor and the Cite Score. Should we be surprised at this increase? If I were to describe FPHY in one word, it would be “innovation”. Attaching the names of the reviewers that have endorsed publication permanently to the published paper is certainly in this class. It ensures that the reviewers are accountable; furthermore, the level of transparency this implies ensures that any conflict of interest is detected at the very beginning of the process. The review process itself is innovative. After an initial review that proceeds traditionally, the reviewers and authors enter a back-and-forth dialog that irons out any misunderstanding. The reviewers retain their anonymity throughout the process. The entire review process and any question concerning editorial decisions is fully in the hands of active scientists. The Frontiers staff is not allowed to make any such decision. They oversee the process and make sure that the manuscript and the process leading to publication or rejection upholds the standard. FPHY is of course a gold open access journal. This is the only scientific publication model that is compatible with the information revolution. A journal’s prestige is traditionally associated with how difficult it is to publish there. Exclusivity as criterion for desirability, is a mechanism we know very well from the consumer market. However, is this criterion appropriate for scientific publishing? It is almost by definition not possible to predict the importance of a new idea – otherwise it would not have been new. So, why should journals make decisions on publishing based on predicting the possible importance of a given work. This can only be properly assessed after publication. Frontiers has removed “importance” from the list of criteria for publication. That the work is new, is another matter: the work must be new and scientifically correct. It would seem that removing the criterion of “importance” would be a risky one, but it turns out not to be. The Specialty Chief Editors who lead the 18 sections that constitute FPHY, have made this selection of papers published in FPHY in 2019. We have chosen the papers that we have found most striking. Even though this is far from a random selection, they do give a good idea of what PFHY is about. Enjoy! We certainly did while making this selection. Professor Alex Hansen (Field Chief Editor)
Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10 by R. Ekwal Sah,M. Jamal Deen Pdf
The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.
Stephen J. Gaul,Nicolaas van Vonno,Steven H. Voldman,Wesley H. Morris
Author : Stephen J. Gaul,Nicolaas van Vonno,Steven H. Voldman,Wesley H. Morris Publisher : John Wiley & Sons Page : 491 pages File Size : 46,6 Mb Release : 2019-12-03 Category : Technology & Engineering ISBN : 9781118701850
Integrated Circuit Design for Radiation Environments by Stephen J. Gaul,Nicolaas van Vonno,Steven H. Voldman,Wesley H. Morris Pdf
A practical guide to the effects of radiation on semiconductor components of electronic systems, and techniques for the designing, laying out, and testing of hardened integrated circuits This book teaches the fundamentals of radiation environments and their effects on electronic components, as well as how to design, lay out, and test cost-effective hardened semiconductor chips not only for today’s space systems but for commercial terrestrial applications as well. It provides a historical perspective, the fundamental science of radiation, and the basics of semiconductors, as well as radiation-induced failure mechanisms in semiconductor chips. Integrated Circuits Design for Radiation Environments starts by introducing readers to semiconductors and radiation environments (including space, atmospheric, and terrestrial environments) followed by circuit design and layout. The book introduces radiation effects phenomena including single-event effects, total ionizing dose damage and displacement damage) and shows how technological solutions can address both phenomena. Describes the fundamentals of radiation environments and their effects on electronic components Teaches readers how to design, lay out and test cost-effective hardened semiconductor chips for space systems and commercial terrestrial applications Covers natural and man-made radiation environments, space systems and commercial terrestrial applications Provides up-to-date coverage of state-of-the-art of radiation hardening technology in one concise volume Includes questions and answers for the reader to test their knowledge Integrated Circuits Design for Radiation Environments will appeal to researchers and product developers in the semiconductor, space, and defense industries, as well as electronic engineers in the medical field. The book is also helpful for system, layout, process, device, reliability, applications, ESD, latchup and circuit design semiconductor engineers, along with anyone involved in micro-electronics used in harsh environments.
Photo-induced Defects in Semiconductors by David Redfield,Richard H. Bube Pdf
This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the authors present properties of DX and EL2 centers in IIISHV compounds. They also deal with additional crystalline materials before giving a detailed description of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. The book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.
Bias Temperature Instability for Devices and Circuits by Tibor Grasser Pdf
This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
Charged Semiconductor Defects by Edmund G. Seebauer,Meredith C. Kratzer Pdf
Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Semiconductor Material and Device Characterization by Dieter K. Schroder Pdf
This Third Edition updates a landmark text with thelatest findings The Third Edition of the internationally laudedSemiconductor Material and Device Characterization bringsthe text fully up-to-date with the latest developments in the fieldand includes new pedagogical tools to assist readers. Not only doesthe Third Edition set forth all the latest measurementtechniques, but it also examines new interpretations and newapplications of existing techniques. Semiconductor Material and Device Characterizationremains the sole text dedicated to characterization techniques formeasuring semiconductor materials and devices. Coverage includesthe full range of electrical and optical characterization methods,including the more specialized chemical and physical techniques.Readers familiar with the previous two editions will discover athoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the mostcurrent data and information 260 new references offering access to the latest research anddiscussions in specialized topics New problems and review questions at the end of each chapter totest readers' understanding of the material In addition, readers will find fully updated and revisedsections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-basedmeasurement and Kelvin probes. This chapter also examinesprobe-based measurements, including scanning capacitance, scanningKelvin force, scanning spreading resistance, and ballistic electronemission microscopy. Reliability and Failure Analysis examines failure times anddistribution functions, and discusses electromigration, hotcarriers, gate oxide integrity, negative bias temperatureinstability, stress-induced leakage current, and electrostaticdischarge. Written by an internationally recognized authority in the field,Semiconductor Material and Device Characterization remainsessential reading for graduate students as well as forprofessionals working in the field of semiconductor devices andmaterials. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment.