Fundamentals Of Silicon Carbide Technology

Author : Tsunenobu Kimoto,James A. Cooper
Publisher : John Wiley & Sons
Page : 552 pages
File Size : 49,9 Mb
Release : 2014-09-23
Category : Technology & Engineering
ISBN : 9781118313558

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Fundamentals of Silicon Carbide Technology by Tsunenobu Kimoto,James A. Cooper Pdf

A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Author : Tsunenobu Kimoto,James A. Cooper
Publisher : John Wiley & Sons
Page : 565 pages
File Size : 52,5 Mb
Release : 2014-11-24
Category : Technology & Engineering
ISBN : 9781118313527

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Fundamentals of Silicon Carbide Technology by Tsunenobu Kimoto,James A. Cooper Pdf

A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Author : Konstantinos Zekentes,Konstantin Vasilevskiy
Publisher : Materials Research Forum LLC
Page : 250 pages
File Size : 48,7 Mb
Release : 2018-09-20
Category : Technology & Engineering
ISBN : 9781945291852

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Advancing Silicon Carbide Electronics Technology I by Konstantinos Zekentes,Konstantin Vasilevskiy Pdf

The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.

Author : Konstantinos Zekentes,Konstantin Vasilevskiy
Publisher : Materials Research Forum LLC
Page : 292 pages
File Size : 40,5 Mb
Release : 2020-03-15
Category : Technology & Engineering
ISBN : 9781644900673

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Advancing Silicon Carbide Electronics Technology II by Konstantinos Zekentes,Konstantin Vasilevskiy Pdf

The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).

Author : Stephen E. Saddow,Anant K. Agarwal
Publisher : Artech House
Page : 236 pages
File Size : 47,6 Mb
Release : 2004
Category : Science
ISBN : 1580537413

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Advances in Silicon Carbide Processing and Applications by Stephen E. Saddow,Anant K. Agarwal Pdf

Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.

Author : Sergey Rumyantsev,Michael S Shur,Michael E Levinshtein
Publisher : World Scientific
Page : 342 pages
File Size : 43,7 Mb
Release : 2006-07-25
Category : Technology & Engineering
ISBN : 9789814477772

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Sic Materials And Devices - Volume 1 by Sergey Rumyantsev,Michael S Shur,Michael E Levinshtein Pdf

After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.

Author : Wolfgang J. Choyke,Hiroyuki Matsunami,Gerhard Pensl
Publisher : Springer Science & Business Media
Page : 899 pages
File Size : 53,6 Mb
Release : 2013-04-17
Category : Technology & Engineering
ISBN : 9783642188701

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Silicon Carbide by Wolfgang J. Choyke,Hiroyuki Matsunami,Gerhard Pensl Pdf

Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

Author : Bill Fraley
Publisher : Unknown
Page : 0 pages
File Size : 51,8 Mb
Release : 2015-03-31
Category : Silicon carbide
ISBN : 1632384140

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Silicon Carbide Devices and Technology by Bill Fraley Pdf

This book elaborately discusses the silicon carbide devices and their technology. Lately, a few Silicon Carbide (SiC¡) power devices like metal-oxide-semiconductor field-effect-transistors (MOSFETs), Schottky-barrier diodes (SBDs), junction FETs (JFETs), and their combined modules have been introduced in the market. However, to securely supply them and decrease their cost, further enhancements for material characterizations as well as for device processing are still required. This book comprehensively elucidates current technologies on processing, modeling, characterization, manufacturing, and other important aspects of SiC devices. The aim of this book is to serve as a helpful source of information for advancements in SiC devices.

Author : B Jayant Baliga
Publisher : World Scientific
Page : 671 pages
File Size : 49,6 Mb
Release : 2023-09-18
Category : Technology & Engineering
ISBN : 9789811284298

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Modern Silicon Carbide Power Devices by B Jayant Baliga Pdf

Silicon Carbide power devices are being increasingly adopted for many applications such as electric vehicles and charging stations. There is a large demand for a resource to learn and understand the basic physics of operation of these devices to create engineers with in depth knowledge about them.This unique compendium provides a comprehensive design guide for Silicon Carbide power devices. It systematically describes the device structures and analytical models for computing their characteristics. The device structures included are the Schottky diode, JBS rectifier, power MOSFET, JBSFET, IGBT and BiDFET. Unique structures that address achieving excellent voltage blocking and on-resistance are emphasized.This useful textbook and reference innovations for achieving superior high frequency operation and highlights manufacturing technology for the devices. The book will benefit professionals, academics, researchers and graduate students in the fields of electrical and electronic engineering, circuits and systems, semiconductors, and energy studies.

Author : Stephen Saddow,Francesco La Via
Publisher : BoD – Books on Demand
Page : 260 pages
File Size : 45,6 Mb
Release : 2015-09-17
Category : Technology & Engineering
ISBN : 9789535121688

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Advanced Silicon Carbide Devices and Processing by Stephen Saddow,Francesco La Via Pdf

Since the production of the first commercially available blue LED in the late 1980s, silicon carbide technology has grown into a billion-dollar industry world-wide in the area of solid-state lighting and power electronics. With this in mind we organized this book to bring to the attention of those well versed in SiC technology some new developments in the field with a particular emphasis on particularly promising technologies such as SiC-based solar cells and optoelectronics. We have balanced this with the more traditional subjects such as power electronics and some new developments in the improvement of the MOS system for SiC MOSFETS. Given the importance of advanced microsystems and sensors based on SiC, we also included a review on 3C-SiC for both microsystem and electronic applications.

Author : B. Jayant Baliga
Publisher : World Scientific
Page : 526 pages
File Size : 44,9 Mb
Release : 2005
Category : Technology & Engineering
ISBN : 9789812774521

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Silicon Carbide Power Devices by B. Jayant Baliga Pdf

Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.

Author : Carl-Mikael Zetterling
Publisher : IET
Page : 202 pages
File Size : 54,5 Mb
Release : 2002
Category : Technology & Engineering
ISBN : 0852969988

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Process Technology for Silicon Carbide Devices by Carl-Mikael Zetterling Pdf

This book explains why SiC is so useful in electronics, gives clear guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics etc) and describes how these are integrated in device manufacture.

Author : George Gibbs
Publisher : Unknown
Page : 284 pages
File Size : 51,7 Mb
Release : 2016-10-01
Category : Electronic
ISBN : 1681176432

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Physics and Technology of Silicon Carbide Devices by George Gibbs Pdf

Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.

Author : B Jayant Baliga
Publisher : World Scientific Publishing Company
Page : 592 pages
File Size : 41,6 Mb
Release : 2016-12-12
Category : Electronic
ISBN : 9789813109421

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Gallium Nitride and Silicon Carbide Power Devices by B Jayant Baliga Pdf

During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies. This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities. Request Inspection Copy

Author : Konstantions Zekentes,Konstantin Vasilevskiy
Publisher : Unknown
Page : 128 pages
File Size : 50,7 Mb
Release : 2018
Category : Electronic
ISBN : OCLC:1329410237

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Advancing Silicon Carbide Electronics Technology by Konstantions Zekentes,Konstantin Vasilevskiy Pdf