Doping In Iii V Semiconductors

Author : E. Fred Schubert
Publisher : E. Fred Schubert
Page : 128 pages
File Size : 42,8 Mb
Release : 2015-08-18
Category : Science
ISBN : 9780986382635

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Doping in III-V Semiconductors by E. Fred Schubert Pdf

This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.

Author : E. F. Schubert
Publisher : Cambridge University Press
Page : 632 pages
File Size : 45,9 Mb
Release : 1993-09-30
Category : Science
ISBN : 0521419190

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Doping in III-V Semiconductors by E. F. Schubert Pdf

Doping of III-V semiconductor compounds is the basis of virtually all semiconductor heterostructures and all optoelectronic devices. This is the first book to provide a comprehensive and thorough treatment of the subject, examining both theoretical and experimental aspects, and including important material on delta-doping. The author is involved in research at one of the world's foremost microelectronics laboratories, and while assessing the current state of the art, he also provides valuable introductory material for those beginning studies or research in this field.

Author : S. J. Pearton,C. R. Abernathy,F. Ren
Publisher : World Scientific
Page : 568 pages
File Size : 41,7 Mb
Release : 1996
Category : Technology & Engineering
ISBN : 9810218842

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Topics in Growth and Device Processing of III-V Semiconductors by S. J. Pearton,C. R. Abernathy,F. Ren Pdf

This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.

Author : E. F. Schubert
Publisher : Cambridge University Press
Page : 628 pages
File Size : 43,8 Mb
Release : 1996-03-14
Category : Science
ISBN : 0521482887

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Delta-doping of Semiconductors by E. F. Schubert Pdf

This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering.

Author : Matthew D. McCluskey,Eugene E. Haller
Publisher : CRC Press
Page : 372 pages
File Size : 44,5 Mb
Release : 2012-02-23
Category : Science
ISBN : 9781439831533

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Dopants and Defects in Semiconductors by Matthew D. McCluskey,Eugene E. Haller Pdf

Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts.The authors first present introductory concepts, including basic semiconductor theory, defect classif

Author : Matthew D. McCluskey,Eugene E. Haller
Publisher : CRC Press
Page : 543 pages
File Size : 47,6 Mb
Release : 2018-02-19
Category : Science
ISBN : 9781351977975

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Dopants and Defects in Semiconductors, Second Edition by Matthew D. McCluskey,Eugene E. Haller Pdf

Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ?Materials Today "... well written, with clear, lucid explanations ..." ?Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.

Author : Amy Jo Moll
Publisher : Unknown
Page : 288 pages
File Size : 46,6 Mb
Release : 1994
Category : Electronic
ISBN : UCAL:C3386531

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Carbon Doping of III-V Compound Semiconductors by Amy Jo Moll Pdf

Author : Brian Tuck
Publisher : CRC Press
Page : 252 pages
File Size : 46,7 Mb
Release : 1988-01-01
Category : Science
ISBN : 0852743513

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Atomic Diffusion in III-V Semiconductors by Brian Tuck Pdf

III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology. Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.

Author : Serge Oktyabrsky,Peide Ye
Publisher : Springer Science & Business Media
Page : 451 pages
File Size : 51,8 Mb
Release : 2010-03-16
Category : Technology & Engineering
ISBN : 9781441915474

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Fundamentals of III-V Semiconductor MOSFETs by Serge Oktyabrsky,Peide Ye Pdf

Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Author : Sebastian Loth
Publisher : Universitätsverlag Göttingen
Page : 189 pages
File Size : 46,8 Mb
Release : 2008
Category : Electronic
ISBN : 9783940344144

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Atomic Scale Images of Acceptors in III-V Semiconductors by Sebastian Loth Pdf

Author : Volkmar Dierolf,Ian Ferguson,John M Zavada
Publisher : Woodhead Publishing
Page : 470 pages
File Size : 42,7 Mb
Release : 2016-01-23
Category : Science
ISBN : 9780081000601

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Rare Earth and Transition Metal Doping of Semiconductor Materials by Volkmar Dierolf,Ian Ferguson,John M Zavada Pdf

Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron’s electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics Details the properties of semiconductors for spintronics

Author : David D. Awschalom,Robert A. Buhrman,James M. Daughton,Stephan von Molnár,Michael L. Roukes
Publisher : Springer Science & Business Media
Page : 216 pages
File Size : 48,5 Mb
Release : 2013-06-29
Category : Science
ISBN : 9789401705325

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Spin Electronics by David D. Awschalom,Robert A. Buhrman,James M. Daughton,Stephan von Molnár,Michael L. Roukes Pdf

The history of scientific research and technological development is replete with examples of breakthroughs that have advanced the frontiers of knowledge, but seldom does it record events that constitute paradigm shifts in broad areas of intellectual pursuit. One notable exception, however, is that of spin electronics (also called spintronics, magnetoelectronics or magnetronics), wherein information is carried by electron spin in addition to, or in place of, electron charge. It is now well established in scientific and engineering communities that Moore's Law, having been an excellent predictor of integrated circuit density and computer performance since the 1970s, now faces great challenges as the scale of electronic devices has been reduced to the level where quantum effects become significant factors in device operation. Electron spin is one such effect that offers the opportunity to continue the gains predicted by Moore's Law, by taking advantage of the confluence of magnetics and semiconductor electronics in the newly emerging discipline of spin electronics. From a fundamental viewpoine, spin-polarization transport in a material occurs when there is an imbalance of spin populations at the Fermi energy. In ferromagnetic metals this imbalance results from a shift in the energy states available to spin-up and spin-down electrons. In practical applications, a ferromagnetic metal may be used as a source of spin-polarized electronics to be injected into a semiconductor, a superconductor or a normal metal, or to tunnel through an insulating barrier.

Author : Sadao Adachi
Publisher : John Wiley & Sons
Page : 342 pages
File Size : 42,7 Mb
Release : 1992-11-10
Category : Science
ISBN : 0471573299

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Physical Properties of III-V Semiconductor Compounds by Sadao Adachi Pdf

The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.

Author : Stephen J. Pearton
Publisher : CRC Press
Page : 718 pages
File Size : 44,9 Mb
Release : 2000-10-31
Category : Science
ISBN : 9781482298147

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GaN and Related Materials II by Stephen J. Pearton Pdf

The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microw

Author : Thomas D. Culp
Publisher : Unknown
Page : 556 pages
File Size : 44,5 Mb
Release : 1998
Category : Electronic
ISBN : WISC:89063828743

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Photoluminescence Properties of Erbium Doped III-V Semiconductors by Thomas D. Culp Pdf