Effect Of Disorder And Defects In Ion Implanted Semiconductors Electrical And Physiochemical Characterization

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Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physiochemical Characterization

Author : Anonim
Publisher : Academic Press
Page : 300 pages
File Size : 54,6 Mb
Release : 1997-05-23
Category : Technology & Engineering
ISBN : 0080864422

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Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physiochemical Characterization by Anonim Pdf

Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical and physico-chemical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Author : Anonim
Publisher : Academic Press
Page : 316 pages
File Size : 53,5 Mb
Release : 1997-06-12
Category : Technology & Engineering
ISBN : 0080864430

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Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization by Anonim Pdf

Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical, physical, and optical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Identification of Defects in Semiconductors

Author : Anonim
Publisher : Academic Press
Page : 376 pages
File Size : 54,5 Mb
Release : 1998-07-02
Category : Technology & Engineering
ISBN : 0080864481

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Identification of Defects in Semiconductors by Anonim Pdf

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Isotope Effects in Solid State Physics

Author : Anonim
Publisher : Academic Press
Page : 268 pages
File Size : 51,8 Mb
Release : 2000-10-24
Category : Science
ISBN : 0080540961

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Isotope Effects in Solid State Physics by Anonim Pdf

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. First book on the extremely fashionable subject Adopts an original approach to the subject Timely book in a field making significant progress Introduces new optical tools for solid state physics with wide technological potential Important applications are to be expected for information storage, isotopic fiber-optics, and tunable solid state lasers, isotopic optoelectronics, as well as neutron transmutation doping Accessible to physics, chemists, electronic engineers, and materials scientists Contents based on recent theoretical developments

Defects in Semiconductors

Author : Anonim
Publisher : Academic Press
Page : 458 pages
File Size : 46,6 Mb
Release : 2015-06-08
Category : Science
ISBN : 9780128019405

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Defects in Semiconductors by Anonim Pdf

This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors

Hydrogen in Semiconductors II

Author : Anonim
Publisher : Academic Press
Page : 541 pages
File Size : 55,6 Mb
Release : 1999-05-05
Category : Science
ISBN : 9780080525259

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Hydrogen in Semiconductors II by Anonim Pdf

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Provides the most in-depth coverage of hydrogen in silicon available in a single source Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors Combines both experimental and theoretical studies to form a comprehensive reference

Ultrafast Physical Processes in Semiconductors

Author : Anonim
Publisher : Elsevier
Page : 468 pages
File Size : 44,9 Mb
Release : 2000-10-06
Category : Science
ISBN : 0080540953

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Ultrafast Physical Processes in Semiconductors by Anonim Pdf

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Processing and Properties of Compound Semiconductors

Author : Anonim
Publisher : Elsevier
Page : 333 pages
File Size : 46,8 Mb
Release : 2001-10-20
Category : Science
ISBN : 9780080541013

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Processing and Properties of Compound Semiconductors by Anonim Pdf

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

Electroluminescence II

Author : Anonim
Publisher : Academic Press
Page : 257 pages
File Size : 44,9 Mb
Release : 1999-10-29
Category : Science
ISBN : 0080864635

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Electroluminescence II by Anonim Pdf

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

High Brightness Light Emitting Diodes

Author : Anonim
Publisher : Academic Press
Page : 469 pages
File Size : 47,8 Mb
Release : 1998-02-09
Category : Science
ISBN : 0080864457

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High Brightness Light Emitting Diodes by Anonim Pdf

Volume 48in the Semiconductors and Semimetals series discusses the physics and chemistry of electronic materials, a subject of growing practical importance in the semiconductor devices industry. The contributors discuss the current state of knowledge and provide insight into future developments of this important field.

Advances in Thermoelectric Materials I

Author : Anonim
Publisher : Elsevier
Page : 326 pages
File Size : 47,9 Mb
Release : 2000-11-07
Category : Technology & Engineering
ISBN : 008054097X

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Advances in Thermoelectric Materials I by Anonim Pdf

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Gallium-Nitride (GaN) II

Author : Anonim
Publisher : Academic Press
Page : 509 pages
File Size : 41,8 Mb
Release : 1998-10-22
Category : Science
ISBN : 9780080864556

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Gallium-Nitride (GaN) II by Anonim Pdf

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Silicon Epitaxy

Author : Anonim
Publisher : Elsevier
Page : 514 pages
File Size : 52,6 Mb
Release : 2001-09-26
Category : Science
ISBN : 9780080541006

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Silicon Epitaxy by Anonim Pdf

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

Recent Trends in Thermoelectric Materials Research: Part Three

Author : Anonim
Publisher : Elsevier
Page : 305 pages
File Size : 53,5 Mb
Release : 2001-01-03
Category : Technology & Engineering
ISBN : 9780080540993

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Recent Trends in Thermoelectric Materials Research: Part Three by Anonim Pdf

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Thermoelectric materials may be used for solid state refrigeration or power generation applications via the large Peltier effect in these materials. To be an effective thermoelectric material, a material must possess a large Seebeck coefficient, a low resistivity and a low thermal conductivity. Due to increased need for alternative energy sources providing environmentally friendly refrigeration and power generation, thermoelectric materials research experienced a rebirth in the mid 1990's. Semiconductors and Semimetals, Volume 71: Recent Trends in Thermoelectric Materials Research: Part Three provides an overview of much of this research in thermoelectric materials during the decade of the 1990's. New materials and new material concepts such as quantum well and superlattice structures gave hope to the possibilities that might be achieved. An effort was made to focus on these new materials and not on materials such as BiTe alloys, since such recent reviews are available. Experts in the field who were active researchers during this period were the primary authors to this series of review articles. This is the most complete collection of review articles that are primarily focussed on new materials and new concepts that is existence to date.

Self-Assembled InGaAs/GaAs Quantum Dots

Author : Anonim
Publisher : Academic Press
Page : 385 pages
File Size : 54,8 Mb
Release : 1999-03-29
Category : Technology & Engineering
ISBN : 9780080864587

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Self-Assembled InGaAs/GaAs Quantum Dots by Anonim Pdf

This volume is concerned with the crystal growth, optical properties, and optical device application of the self-formed quantum dot, which is one of the major current subjects in the semiconductor research field.The atom-like density of states in quantum dots is expected to drastically improve semiconductor laser performance, and to develop new optical devices. However, since the first theoretical prediction for its great possibilities was presented in 1982, due to the difficulty of their fabrication process. Recently, the advent of self-organized quantum dots has made it possible to apply the results in important optical devices, and further progress is expected in the near future.The authors, working for Fujitsu Laboratories, are leading this quantum-dot research field. In this volume, they describe the state of the art in the entire field, with particular emphasis on practical applications.