Gallium Nitride Gan Ii

Author : Anonim
Publisher : Academic Press
Page : 509 pages
File Size : 54,8 Mb
Release : 1998-10-22
Category : Science
ISBN : 9780080864556

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Gallium-Nitride (GaN) II by Anonim Pdf

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Author : Anonim
Publisher : Academic Press
Page : 489 pages
File Size : 41,5 Mb
Release : 1998-10-30
Category : Technology & Engineering
ISBN : 0127521666

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Gallium-Nitride (GaN) II by Anonim Pdf

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Author : Farid Medjdoub
Publisher : CRC Press
Page : 372 pages
File Size : 50,8 Mb
Release : 2017-12-19
Category : Technology & Engineering
ISBN : 9781482220049

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Gallium Nitride (GaN) by Farid Medjdoub Pdf

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

Author : Jacques L Pankove,Theodore D. Moustakas
Publisher : Academic Press
Page : 0 pages
File Size : 54,9 Mb
Release : 1999
Category : Gallium nitride
ISBN : 0125440553

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Gallium Nitride by Jacques L Pankove,Theodore D. Moustakas Pdf

These two volumes present a complete description of the various methods of making and studying the crystal and electronic structure. The books also assist in determining the origin and the influence of defects in the intrinsic properties and of applying these materials for various optical (LEDs, lasers, detectors) and electronic (transistors, non-volatile memories) devices. These two volumes give a comprehensive description of both experimental and theoretical developments in the field of III-V nitrides over the past thirty years. The various chapters address issues related to crystal growth and structure, doping and alloy phenomena, band structure, optical and electronic properties, non-linear optical phenomena, the origin and the effect of strain in the hetero-epitaxy and the electronic structure, phonons, the theory and experimental observations of the effect of hydrogen, investigation of the electronic structure of defects using transport and magnetic resonance measurements, MQWs and superlattices, device processing and applications of these materials to LEDs, Lasers, Ultraviolet and X-ray Detectors, Transistors and non-volatile semiconductor memories. The various chapters were written by experts and an attempt has been made to address the topics in a tutorial fashion,including an historical review,a description of the state of the art, anticipation of future developments, and presentation of a complete list of references. The level of treatment of the various topics is appropriate for graduate students, laboratory practitioners, as well as experts in the field.

Author : Gaudenzio Meneghesso,Matteo Meneghini,Enrico Zanoni
Publisher : Springer
Page : 232 pages
File Size : 44,7 Mb
Release : 2018-05-12
Category : Technology & Engineering
ISBN : 9783319779942

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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion by Gaudenzio Meneghesso,Matteo Meneghini,Enrico Zanoni Pdf

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

Author : Dirk Ehrentraut,Elke Meissner,Michal Bockowski
Publisher : Springer Science & Business Media
Page : 337 pages
File Size : 42,6 Mb
Release : 2010-06-14
Category : Science
ISBN : 9783642048302

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Technology of Gallium Nitride Crystal Growth by Dirk Ehrentraut,Elke Meissner,Michal Bockowski Pdf

This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.

Author : C. R. Abernathy,H. Amano,J. C. Zolper
Publisher : Materials Research Society
Page : 534 pages
File Size : 41,7 Mb
Release : 1997-08-13
Category : Technology & Engineering
ISBN : 155899372X

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Gallium Nitride and Related Materials II: Volume 468 by C. R. Abernathy,H. Amano,J. C. Zolper Pdf

This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (~400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.

Author : Rüdiger Quay
Publisher : Springer Science & Business Media
Page : 492 pages
File Size : 53,9 Mb
Release : 2008-04-05
Category : Technology & Engineering
ISBN : 9783540718925

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Gallium Nitride Electronics by Rüdiger Quay Pdf

This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.

Author : Theodore D. Moustakas
Publisher : Academic Press
Page : 0 pages
File Size : 42,6 Mb
Release : 1998
Category : Gallium nitride
ISBN : 0125440561

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Gallium Nitride (GaN) I by Theodore D. Moustakas Pdf

Author : Hongyu Yu,Tianli Duan
Publisher : CRC Press
Page : 298 pages
File Size : 41,5 Mb
Release : 2017-07-06
Category : Science
ISBN : 9781351767613

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Gallium Nitride Power Devices by Hongyu Yu,Tianli Duan Pdf

GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

Author : Wengang (Wayne) Bi,Haochung (Henry) Kuo,Peicheng Ku,Bo Shen
Publisher : CRC Press
Page : 984 pages
File Size : 44,9 Mb
Release : 2017-10-20
Category : Science
ISBN : 9781351648059

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Handbook of GaN Semiconductor Materials and Devices by Wengang (Wayne) Bi,Haochung (Henry) Kuo,Peicheng Ku,Bo Shen Pdf

This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

Author : Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni
Publisher : Springer
Page : 380 pages
File Size : 45,6 Mb
Release : 2016-09-08
Category : Technology & Engineering
ISBN : 9783319431994

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Power GaN Devices by Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni Pdf

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Author : B Jayant Baliga
Publisher : World Scientific Publishing Company
Page : 592 pages
File Size : 50,8 Mb
Release : 2016-12-12
Category : Electronic
ISBN : 9789813109421

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Gallium Nitride and Silicon Carbide Power Devices by B Jayant Baliga Pdf

During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies. This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities. Request Inspection Copy

Author : Stephen J. Pearton,Cammy R. Abernathy,Fan Ren
Publisher : Springer Science & Business Media
Page : 383 pages
File Size : 43,5 Mb
Release : 2006-07-06
Category : Technology & Engineering
ISBN : 9781846283598

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Gallium Nitride Processing for Electronics, Sensors and Spintronics by Stephen J. Pearton,Cammy R. Abernathy,Fan Ren Pdf

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.

Author : Christopher Nebel
Publisher : Elsevier
Page : 410 pages
File Size : 42,8 Mb
Release : 2004-04-19
Category : Technology & Engineering
ISBN : 0080541046

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Thin-Film Diamond II by Christopher Nebel Pdf

Part II reviews the state of the art of thin film diamond a very promising new semiconductor that may one day rival silicon as the material of choice for electronics. Diamond has the following important characteristics; it is resistant to radiation damage, chemically inert and biocompatible and it will become "the material" for bio-electronics, in-vivo applications, radiation detectors and high-frequency devices. Thin-Film Diamond II is the first book to summarize state of the art of CVD diamond in depth. It covers the most recent results regarding growth and structural properties, doping and defect characterization, hydrogen in and on diamond as well as surface properties in general, applications of diamond in electrochemistry, as detectors, and in surface acoustic wave devices * Accessible by both experts and non-experts in the field of semi-conductors research and technology, each chapter is written in a tutorial format· * Assisting engineers to manufacture devices with optimized electronic properties· * Truly international, this volume contains chapters written by recognized experts representing academic and industrial institutions from Europe, Japan and the US