Electron Statistics In Quantum Confined Superlattices

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Electron Statistics In Quantum Confined Superlattices

Kamakhya Prasad Ghatak,Arindam Biswas
Electron Statistics In Quantum Confined Superlattices Book PDF

Author : Kamakhya Prasad Ghatak,Arindam Biswas
Publisher : World Scientific
Page : 790 pages
File Size : 53,8 Mb
Release : 2023-03-14
Category : Science
ISBN : 9789811263675

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Electron Statistics In Quantum Confined Superlattices by Kamakhya Prasad Ghatak,Arindam Biswas Pdf

The concepts of the Electron Statistics (ES) and the ES dependent electronic properties are basic pillars in semiconductor electronics and this first-of-its-kind book deals with the said concepts in doping superlattices (SLs), quantum well, quantum wire and quantum dot SLs, effective mass SLs, SLs with graded interfaces and Fibonacci SLs under different physical conditions respectively. The influences of intense radiation and strong electric fields under said concepts have been considered together with the heavily doped SLs in this context on the basis of newly formulated the electron energy spectra in all the cases. We have suggested experimental determinations of the Einstein relation for the Diffusivity-Mobility ratio, the Debye screening length, Elastic Constants and the content of this book finds 25 different applications in the arena of nanoscience and nanotechnology.This book contains hundred open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers. It is written for post graduate students of various departments of different academic organizations, engineers and professionals in the fields of solid state electronics, materials science, solid state sciences, nano-science, nanotechnology and nano materials in general.

Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures

Kamakhya Prasad Ghatak,Madhuchhanda Mitra,Arindam Biswas
Heisenberg s Uncertainty Principle and the Electron Statistics in Quantized Structures Book PDF

Author : Kamakhya Prasad Ghatak,Madhuchhanda Mitra,Arindam Biswas
Publisher : Springer Nature
Page : 253 pages
File Size : 46,9 Mb
Release : 2022-03-25
Category : Science
ISBN : 9789811698446

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Heisenberg’s Uncertainty Principle and the Electron Statistics in Quantized Structures by Kamakhya Prasad Ghatak,Madhuchhanda Mitra,Arindam Biswas Pdf

This book highlights the importance of Electron Statistics (ES), which occupies a singular position in the arena of solid state sciences, in heavily doped (HD) nanostructures by applying Heisenberg’s Uncertainty Principle directly without using the complicated Density-of-States function approach as given in the literature. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, IV-VI, II-VI and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices change the band structure of materials in fundamental ways, which have also been incorporated in the study of ES in HD quantized structures of optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The influence of magnetic quantization, magneto size quantization, quantum wells, wires and dots, crossed electric and quantizing fields, intense electric field, and light waves on the ES in HD quantized structures and superlattices are discussed. The content of this book finds six different applications in the arena of nano-science and nanotechnology and the various ES dependent electronic quantities, namely the effective mass, the screening length, the Einstein relation and the elastic constants have been investigated. This book is useful for researchers, engineers and professionals in the fields of Applied Sciences, solid state and materials science, nano-science and technology, condensed matter physics, and allied fields, including courses in semiconductor nanostructures. ​

Quantum Capacitance In Quantized Transistors

Kamakhya Prasad Ghatak,Jayita Pal
Quantum Capacitance In Quantized Transistors Book PDF

Author : Kamakhya Prasad Ghatak,Jayita Pal
Publisher : World Scientific
Page : 886 pages
File Size : 42,5 Mb
Release : 2024-02-06
Category : Science
ISBN : 9789811279416

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Quantum Capacitance In Quantized Transistors by Kamakhya Prasad Ghatak,Jayita Pal Pdf

In recent years, there has been considerable interest in studying the quantum capacitance (QC) in 2D quantum MOSFETs (QMOSFET) and 1D Nano Wire FET (NWFET) devices of various technologically important materials which find extensive applications in many directions in low dimensional electronics. The 2D and 1D electron statistics in inversion layers of MOSFETs can rather easily be varied by changing the gate voltage which, in turn, brings a change of the surface electric field, the QC depends on the gate-voltage. This first-of-its-kind book deals solely with the QC in 2D MOSFETs of non-linear optical, ternary, quaternary, III-V compounds, II-VI, IV-VI, stressed Kane type, Ge, GaP, Bismuth telluride, Gallium Antimonide and their 1D NWFETs counter parts. The influence of quantizing magnetic field, crossed electric and magnetic fields, parallel magnetic field, have also been considered on the QC of the said devices of the aforementioned materials. The influences of strong light waves and ultra-strong electric field present in nano-devices have also been considered. The accumulation layers of the quantum effect devices of the said materials have also been discussed in detail by formulating the respective dispersion relations of the heavily doped compounds. The QC in 1D MOSFET of the said materials have also been investigated in this context on the basis of newly formulated electron energy spectra in all the cases. The QC in quantum well transistors and magneto quantum well transistors together with CNTFETs have been formulated and discussed in detail along with I-V equations of ballistic QWFETs and NWFETs together with their heavily doped counter parts under different external physical conditions. In this context, experimental determinations are suggested of the Einstein relation for the Diffusivity-Mobility ratio, the Debye screening length, Elastic Constants and the content of this book finds twenty-two different applications in the arena of nanoscience and nanotechnology.This book contains hundred open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers.

Elastic Constants In Heavily Doped Low Dimensional Materials

Kamakhya Prasad Ghatak,Madhuchhanda Mitra
Elastic Constants In Heavily Doped Low Dimensional Materials Book PDF

Author : Kamakhya Prasad Ghatak,Madhuchhanda Mitra
Publisher : World Scientific
Page : 1036 pages
File Size : 55,6 Mb
Release : 2021-03-15
Category : Science
ISBN : 9789811229480

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Elastic Constants In Heavily Doped Low Dimensional Materials by Kamakhya Prasad Ghatak,Madhuchhanda Mitra Pdf

The elastic constant (EC) is a very important mechanical property of the these materials and its significance is already well known in literature. This first monograph solely deals with the quantum effects in EC of heavily doped (HD) low dimensional materials. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb₂, stressed materials, GaSb, Te, II-V, Bi₂Te₃, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, II-VI, IV-VI, and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices changes the band structure of semiconductors in fundamental ways, which have also been incorporated in the study of EC in HD low dimensional optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under intense external fields has also been discussed in this context. The influences of magnetic quantization, crossed electric and quantizing fields, electric field and light waves on the EC in HD semiconductors and super-lattices are discussed.The content of this book finds twenty-five different applications in the arena of nano-science and nano-technology. We The authors have discussed the experimental methods of determining the Einstein Relation, screening length and EC in this context. This book contains circa 200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the fields of condensed matter physics, materials science, solid state sciences, nano-science and technology and allied fields in addition to the graduate courses in semiconductor nanostructures.

Physics and Applications of Quantum Wells and Superlattices

E.E. Mendez,K. von Klitzing
Physics and Applications of Quantum Wells and Superlattices Book PDF

Author : E.E. Mendez,K. von Klitzing
Publisher : Springer Science & Business Media
Page : 456 pages
File Size : 48,7 Mb
Release : 2012-12-06
Category : Science
ISBN : 9781468454789

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Physics and Applications of Quantum Wells and Superlattices by E.E. Mendez,K. von Klitzing Pdf

This book contains the lectures delivered at the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Superlattices", held in Erice, Italy, on April 21-May 1, 1987. This course was the fourth one of the International School of Solid-State Device Research, which is under the auspices of the Ettore Majorana Center for Scientific Culture. In the last ten years, we have seen an enormous increase in re search in the field of Semiconductor Heterostructures, as evidenced by the large percentage of papers presented in recent international conferences on semiconductor physics. Undoubtfully, this expansion has been made possible by dramatic advances in materials preparation, mostly by molecular beam epitaxy and organometallic chemical vapor deposition. The emphasis on epitaxial growth that was prevalent at the beginning of the decade (thus, the second course of the School, held in 1983, was devoted to Molecular Beam Epitaxy and Heterostructures) has given way to a strong interest in new physical phenomena and new material structures, and to practical applications that are already emerging from them.

Properties of III-V Quantum Wells and Superlattices

P. K. Bhattacharya,Pallab Bhattacharya
Properties of III V Quantum Wells and Superlattices Book PDF

Author : P. K. Bhattacharya,Pallab Bhattacharya
Publisher : IET
Page : 238 pages
File Size : 55,5 Mb
Release : 1996
Category : Electronic books
ISBN : 0852968817

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Properties of III-V Quantum Wells and Superlattices by P. K. Bhattacharya,Pallab Bhattacharya Pdf

A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.

Quantum Effects, Heavy Doping, And The Effective Mass

Ghatak Kamakhya Prasad
Quantum Effects Heavy Doping And The Effective Mass Book PDF

Author : Ghatak Kamakhya Prasad
Publisher : World Scientific
Page : 756 pages
File Size : 42,8 Mb
Release : 2016-12-08
Category : Science
ISBN : 9789813146532

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Quantum Effects, Heavy Doping, And The Effective Mass by Ghatak Kamakhya Prasad Pdf

The importance of the effective mass (EM) is already well known since the inception of solid-state physics and this first-of-its-kind monograph solely deals with the quantum effects in EM of heavily doped (HD) nanostructures. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, II-VI, IV-VI, and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices change the band structure of semiconductors in fundamental ways, which have also been incorporated in the study of EM in HD quantized structures of optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under intense external fields has also been discussed in this context. The influences of magnetic quantization, crossed electric and quantizing fields, electric field and light waves on the EM in HD semiconductors and super-lattices are discussed. The content of this book finds twenty-eight different applications in the arena of nano-science and nano-technology. This book contains 200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the fields of condensed matter physics, materials science, solid state sciences, nano-science and technology and allied fields in addition to the graduate courses in semiconductor nanostructures. The book is written for post-graduate students, researchers, engineers and professionals in the fields of condensed matter physics, solid state sciences, materials science, nanoscience and technology and nanostructured materials in general.

Effective Electron Mass in Low-Dimensional Semiconductors

Sitangshu Bhattacharya,Kamakhya Prasad Ghatak
Effective Electron Mass in Low Dimensional Semiconductors Book PDF

Author : Sitangshu Bhattacharya,Kamakhya Prasad Ghatak
Publisher : Springer Science & Business Media
Page : 549 pages
File Size : 51,6 Mb
Release : 2012-10-06
Category : Science
ISBN : 9783642312472

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Effective Electron Mass in Low-Dimensional Semiconductors by Sitangshu Bhattacharya,Kamakhya Prasad Ghatak Pdf

This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics.

Einstein's Photoemission

Kamakhya Prasad Ghatak
Einstein s Photoemission Book PDF

Author : Kamakhya Prasad Ghatak
Publisher : Springer
Page : 523 pages
File Size : 51,6 Mb
Release : 2014-11-19
Category : Science
ISBN : 9783319111889

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Einstein's Photoemission by Kamakhya Prasad Ghatak Pdf

This monograph solely investigates the Einstein's Photoemission(EP) from Heavily Doped(HD) Quantized Structures on the basis of newly formulated electron dispersion laws. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The EP in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields that control the studies of such quantum effect devices. The suggestions for the experimental determinations of different important physical quantities in HD 2D and 3D materials and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring physical properties in the presence of intense light waves which alter the electron energy spectra) have also been discussed in this context. The influence quantizing magnetic field, on the EP of the different HD quantized structures (quantum wells, quantum well HD superlattices and nipi structures) under different physical conditions has been investigated. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of materials science, condensed matter physics, solid-state sciences, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures offered in different Universities and Institutes.

Magneto Thermoelectric Power in Heavily Doped Quantized Structures

Kamakhya Prasad Ghatak
Magneto Thermoelectric Power in Heavily Doped Quantized Structures Book PDF

Author : Kamakhya Prasad Ghatak
Publisher : World Scientific
Page : 827 pages
File Size : 53,6 Mb
Release : 2016
Category : Science
ISBN : 9789814713207

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Magneto Thermoelectric Power in Heavily Doped Quantized Structures by Kamakhya Prasad Ghatak Pdf

"This pioneering monograph solely deals with the Magneto Thermoelectric Power (MTP) in Heavily Doped (HD) Quantized Structures. The materials considered range from HD quantum confined nonlinear optical materials to HgTe/CdTe HD superlattices with graded interfaces and HD effective mass superlattices under magnetic quantization. An important concept of the measurement of the band gap in HD optoelectronic materials in the presence of external photo-excitation has been discussed in this perspective. The influences of magnetic quantization, crossed electric and quantizing fields, the intense electric field on the TPM in HD semiconductors and superlattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the various fields for which this particular series is dedicated"--

Fowler-Nordheim Field Emission

Sitangshu Bhattacharya,Kamakhya Prasad Ghatak
Fowler Nordheim Field Emission Book PDF

Author : Sitangshu Bhattacharya,Kamakhya Prasad Ghatak
Publisher : Springer Science & Business Media
Page : 353 pages
File Size : 45,6 Mb
Release : 2012-01-13
Category : Technology & Engineering
ISBN : 9783642204937

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Fowler-Nordheim Field Emission by Sitangshu Bhattacharya,Kamakhya Prasad Ghatak Pdf

This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids.

Nanomaterials

Engg Kamakhya Prasad Ghatak,Madhuchhanda Mitra
Nanomaterials Book PDF

Author : Engg Kamakhya Prasad Ghatak,Madhuchhanda Mitra
Publisher : Walter de Gruyter GmbH & Co KG
Page : 491 pages
File Size : 46,7 Mb
Release : 2020-04-06
Category : Science
ISBN : 9783110661194

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Nanomaterials by Engg Kamakhya Prasad Ghatak,Madhuchhanda Mitra Pdf

This monograph investigates the entropy in heavily doped (HD) quantized structures by analyzing under the influence of magnetic quantization, crossed electric and quantizing fields the range from HD quantum confined nonlinear optical materials to HgTe/CdTe HD superlattices with graded interfaces. Finally the authors address various challenges in today’s research of optoelectronic materials and give an outlook to future studies.

Thermoelectric Power in Nanostructured Materials

Kamakhya Prasad Ghatak,Sitangshu Bhattacharya
Thermoelectric Power in Nanostructured Materials Book PDF

Author : Kamakhya Prasad Ghatak,Sitangshu Bhattacharya
Publisher : Springer Science & Business Media
Page : 411 pages
File Size : 41,5 Mb
Release : 2010-07-20
Category : Technology & Engineering
ISBN : 9783642105715

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Thermoelectric Power in Nanostructured Materials by Kamakhya Prasad Ghatak,Sitangshu Bhattacharya Pdf

This is the first monograph which solely investigates the thermoelectric power in nanostrcutured materials under strong magnetic field (TPSM) in quantum confined nonlinear optical, III-V, II-VI, n-GaP, n-Ge, Te, Graphite, PtSb2, zerogap, II-V, Gallium Antimonide, stressed materials, Bismuth, IV-VI, lead germanium telluride, Zinc and Cadmium diphosphides, Bi2Te3, Antimony and carbon nanotubes, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization, the quantum wires and dots of the aforementiond superlattices by formulating the approprate respective carrier energy spectra which in turn control the quantum processes in quantum effect devices. The TPSM in macro, quantum wire and quantum dot superlattices of optoelectronic materials in the presence of external photo-excitation have also been studied on the basis of newly formulated electron dispersion laws. This monograph contains 150 open research problems which form the very core and are useful for PhD students and researchers in the fields of materials science, solid-state sciences, computational and theoretical nanoscience and technology, nanostructured thermodynamics and condensed matter physics in general in addition to the graduate courses on modern thermoelectric materials in various academic departments of many institutes and universities.

Physics and Applications of Quantum Wells and Superlattices

E.E. Mendez,K. von Klitzing
Physics and Applications of Quantum Wells and Superlattices Book PDF

Author : E.E. Mendez,K. von Klitzing
Publisher : Springer
Page : 458 pages
File Size : 45,5 Mb
Release : 2012-02-26
Category : Science
ISBN : 1468454803

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Physics and Applications of Quantum Wells and Superlattices by E.E. Mendez,K. von Klitzing Pdf

This book contains the lectures delivered at the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Superlattices", held in Erice, Italy, on April 21-May 1, 1987. This course was the fourth one of the International School of Solid-State Device Research, which is under the auspices of the Ettore Majorana Center for Scientific Culture. In the last ten years, we have seen an enormous increase in re search in the field of Semiconductor Heterostructures, as evidenced by the large percentage of papers presented in recent international conferences on semiconductor physics. Undoubtfully, this expansion has been made possible by dramatic advances in materials preparation, mostly by molecular beam epitaxy and organometallic chemical vapor deposition. The emphasis on epitaxial growth that was prevalent at the beginning of the decade (thus, the second course of the School, held in 1983, was devoted to Molecular Beam Epitaxy and Heterostructures) has given way to a strong interest in new physical phenomena and new material structures, and to practical applications that are already emerging from them.

Dispersion Relations in Heavily-Doped Nanostructures

Kamakhya Prasad Ghatak
Dispersion Relations in Heavily Doped Nanostructures Book PDF

Author : Kamakhya Prasad Ghatak
Publisher : Springer
Page : 625 pages
File Size : 50,8 Mb
Release : 2015-10-26
Category : Technology & Engineering
ISBN : 9783319210001

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Dispersion Relations in Heavily-Doped Nanostructures by Kamakhya Prasad Ghatak Pdf

This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.