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Author : Marvin L. Cohen,James R. Chelikowsky
Publisher : Springer Science & Business Media
Page : 272 pages
File Size : 40,9 Mb
Release : 2012-12-06
Category : Science
ISBN : 9783642613388
Author : Marvin L Cohen,James R Chelikowsky
Publisher : Unknown
Page : 280 pages
File Size : 49,6 Mb
Release : 1989-09-14
Category : Electronic
ISBN : 364261339X
Author : G. Martinez
Publisher : Springer Science & Business Media
Page : 330 pages
File Size : 55,6 Mb
Release : 1992-11-30
Category : Science
ISBN : 0792320581
It is widely recognized that an understanding of the optical pro perties of matter will give a great deal of important information re levant to the fundamental physical properties. This is especially true in semiconductor physics for which, due to the intrinsic low screening of these materials, the optical response is quite rich. Their spectra reflect indeed as well electronic as spin or phonon transitions. This is also in the semiconductor field that artificial structures have been recently developed, showing for the first time specific physical properties related to the low dimentionality of the electronic and vi bronic properties : with this respect the quantum and fractional quan tum Hall effects are among the most well known aspects. The associated reduced screening is also a clear manifestation of these aspects and as such favors new optical properties or at least significantly enhan ces some of them. For all these reasons, it appeared necessary to try to review in a global way what the optical investigation has brought today about the understanding of the physics of semiconductors. This volume collects the papers presented at the NATO Advanced study Inst i tut e on "Optical Properties of Semiconductors" held at the Ettore Majorana Centre, Erice, Sicily on March 9th to 20th, 1992. This school brought together 70 scientists active in research related to optical properties of semiconductors. There were 12 lecturers who pro vided the main contributions .
Author : David L. Greenaway,Günther Harbeke
Publisher : Unknown
Page : 0 pages
File Size : 55,7 Mb
Release : 1993
Category : Semiconductors
ISBN : OCLC:702886699
Author : S. V. Gaponenko
Publisher : Cambridge University Press
Page : 263 pages
File Size : 43,6 Mb
Release : 1998-10-28
Category : Science
ISBN : 9780521582414
Examines the optical properties of low-dimensional semiconductor structures, a hot research area - for graduate students and researchers.
Author : Heinz Kalt
Publisher : Springer Science & Business Media
Page : 209 pages
File Size : 42,6 Mb
Release : 2012-12-06
Category : Science
ISBN : 9783642582844
This monograph is concerned with the III-V bulk and low-dimensional semiconductors, with the emphasis on the implications of multi-valley bandstructures for the physical mechanisms essential for opto-electronic devices. The optical response of such semiconductor materials is determined by many-body effects such as screening, gap narrowing, Fermi-edge singularity, electron-hole plasma and liquid formation. Consequently, the discussion of these features reflects such interdependencies with the dynamics of excitons and carriers resulting from intervalley coupling.
Author : Lok C. Lew Yan Voon
Publisher : Universal-Publishers
Page : 263 pages
File Size : 48,9 Mb
Release : 1997-08
Category : Science
ISBN : 9780965856447
This study is a theoretical investigation of the electronic and optical properties of intrinsic semiconductors using the orthogonal empirical tight binding model. An analysis of the bulk properties of semiconductors with the zincblende, diamond and rocksalt structures has been carried out. We have extended the work of others to higher order in the interaction integrals and derived new parameter sets for certain semiconductors which better fit the experimental data over the Brillouin zone. The Hamiltonian of the heterostructures is built up layer by layer from the parameters of the bulk constituents. The second part of this work examines a number of applications of the theory. We present a new microscopic derivation of the intervalley deformation potentials within the tight binding representation and computes a number of conduction-band deformation potentials of bulk semiconductors. We have also studied the electronic states in heterostructures and have shown theoretically the possibility of having barrier localization of above-barrier states in a multivalley heterostructure using a multiband calculation. Another result is the proposal for a new "type-II" lasing mechanism in short-period GaAs/AlAs superlattices. As for our work on the optical properties, a new formalism, based on the generalized Feynman-Hellmann theorem, for computing interband optical matrix elements has been obtained and has been used to compute the linear and second-order nonlinear optical properties of a number of bulk semiconductors and semiconductor heterostructures. In agreement with the one-band elective mass calculations of other groups, our more elaborate calculations show that the intersubband oscillator strengths of quantum wells can be greatly enhanced over the bulk interband values.
Author : David L. Greenaway,Günther Harbeke
Publisher : Elsevier
Page : 172 pages
File Size : 42,6 Mb
Release : 2015-12-04
Category : Science
ISBN : 9781483151861
Optical Properties and Band Structure of Semiconductors, Volume 1 presents the experimental studies of the fundamental energy band structure of semiconductors and insulators. This book provides detailed information of the available measurement methods and results for a large number of both cubic and non-cubic materials. Comprised of 10 chapters, this volume begins with an overview of the fundamental band structure of semiconductors. This text then discusses the instrumentation and methods available for the measurement of absorption coefficient, absolute reflection coefficient, and other optical properties of insulators and semiconductors primarily in their fundamental region. Other chapters consider the interband transitions in the one-electron approximation. The final chapter deals with the equivalence of the transverse and longitudinal dielectric constants in the frequency range under consideration. This book is a valuable resource for solid state physicists. Readers and researchers with interest in the electron and optical properties of semiconductors and insulators will also find this book useful.
Author : Fedor T. Vasko,Alex V. Kuznetsov
Publisher : Springer Science & Business Media
Page : 402 pages
File Size : 50,8 Mb
Release : 2012-12-06
Category : Technology & Engineering
ISBN : 9781461205357
The theoretical basis and the relevant experimental knowledge underlying our present understanding of the electrical and optical properties of semiconductor heterostructures. Although such structures have been known since the 1940s, it was only in the 1980s that they moved to the forefront of research. The resulting structures have remarkable properties not shared by bulk materials. The text begins with a description of the electronic properties of various types of heterostructures, including discussions of complex band-structure effects, localised states, tunnelling phenomena, and excitonic states. The focus of the remainder of the book is on optical properties, including intraband absorption, luminescence and recombination, Raman scattering, subband optical transitions, nonlinear effects, and ultrafast optical phenomena. The concluding chapter presents an overview of some of the applications that make use of the physics discussed. Appendices provide background information on band structure theory, kinetic theory, electromagnetic modes, and Coulomb effects.
Author : Peter YU,Manuel Cardona
Publisher : Springer Science & Business Media
Page : 645 pages
File Size : 40,6 Mb
Release : 2007-05-08
Category : Technology & Engineering
ISBN : 9783540264750
Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.
Author : Gerasimos Konstantatos,Edward H. Sargent
Publisher : Cambridge University Press
Page : 329 pages
File Size : 55,8 Mb
Release : 2013-11-07
Category : Science
ISBN : 9780521198264
Captures the most up-to-date research in the field, written in an accessible style by the world's leading experts.
Author : David L. Greenaway
Publisher : Unknown
Page : 159 pages
File Size : 51,5 Mb
Release : 1970
Category : Electronic
ISBN : OCLC:1130341833
Author : Luís Alcácer
Publisher : Morgan & Claypool Publishers
Page : 135 pages
File Size : 55,5 Mb
Release : 2018-12-07
Category : Technology & Engineering
ISBN : 9781643271682
Written in the perspective of an experimental chemist, this book puts together some fundamentals from chemistry, solid state physics and quantum chemistry, to help with understanding and predicting the electronic and optical properties of organic semiconductors, both polymers and small molecules. The text is intended to assist graduate students and researchers in the field of organic electronics to use theory to design more efficient materials for organic electronic devices such as organic solar cells, light emitting diodes and field effect transistors. After addressing some basic topics in solid state physics, a comprehensive introduction to molecular orbitals and band theory leads to a description of computational methods based on Hartree-Fock and density functional theory (DFT), for predicting geometry conformations, frontier levels and energy band structures. Topological defects and transport and optical properties are then addressed, and one of the most commonly used transparent conducting polymers, PEDOT:PSS, is described in some detail as a case study.
Author : Anna Köhler,Heinz Bässler
Publisher : John Wiley & Sons
Page : 424 pages
File Size : 54,8 Mb
Release : 2015-03-17
Category : Technology & Engineering
ISBN : 9783527685141
The first advanced textbook to provide a useful introduction in a brief, coherent and comprehensive way, with a focus on the fundamentals. After having read this book, students will be prepared to understand any of the many multi-authored books available in this field that discuss a particular aspect in more detail, and should also benefit from any of the textbooks in photochemistry or spectroscopy that concentrate on a particular mechanism. Based on a successful and well-proven lecture course given by one of the authors for many years, the book is clearly structured into four sections: electronic structure of organic semiconductors, charged and excited states in organic semiconductors, electronic and optical properties of organic semiconductors, and fundamentals of organic semiconductor devices.
Author : Heinz Kalt
Publisher : Springer
Page : 199 pages
File Size : 50,9 Mb
Release : 2011-09-26
Category : Technology & Engineering
ISBN : 3642582850
This monograph is concerned with the III-V bulk and low-dimensional semiconductors, with the emphasis on the implications of multi-valley bandstructures for the physical mechanisms essential for opto-electronic devices. The optical response of such semiconductor materials is determined by many-body effects such as screening, gap narrowing, Fermi-edge singularity, electron-hole plasma and liquid formation. Consequently, the discussion of these features reflects such interdependencies with the dynamics of excitons and carriers resulting from intervalley coupling.
