Epitaxial Silicon Technology

Author : B Baliga
Publisher : Elsevier
Page : 337 pages
File Size : 43,7 Mb
Release : 2012-12-02
Category : Technology & Engineering
ISBN : 9780323155458

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Epitaxial Silicon Technology by B Baliga Pdf

Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.

Author : E. Kasper
Publisher : CRC Press
Page : 306 pages
File Size : 50,8 Mb
Release : 2018-05-04
Category : Technology & Engineering
ISBN : 9781351085076

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Silicon Molecular Beam Epitaxy by E. Kasper Pdf

This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Author : Anonim
Publisher : Unknown
Page : 526 pages
File Size : 53,6 Mb
Release : 1984
Category : Integrated circuits
ISBN : PSU:000011557937

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VLSI Science and Technology by Anonim Pdf

Author : Paul Siffert,Eberhard Krimmel
Publisher : Springer Science & Business Media
Page : 552 pages
File Size : 48,9 Mb
Release : 2013-03-09
Category : Technology & Engineering
ISBN : 9783662098974

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Silicon by Paul Siffert,Eberhard Krimmel Pdf

With topics ranging from epitaxy through lattice defects and doping to quantum computation, this book provides a personalized survey of the development and use of silicon, the basis for the revolutionary changes in our lives sometimes called "The Silicon Age." Beginning with the very first developments more than 50 years ago, this reports on all aspects of silicon and silicon technology up to its use in exciting new technologies, including a glance at possible future developments.

Author : E. Kasper
Publisher : CRC Press
Page : 274 pages
File Size : 48,9 Mb
Release : 2018-05-04
Category : Technology & Engineering
ISBN : 9781351093514

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Silicon-Molecular Beam Epitaxy by E. Kasper Pdf

This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Author : Charles P. Marsden
Publisher : Unknown
Page : 476 pages
File Size : 43,5 Mb
Release : 1970
Category : Electronics
ISBN : UIUC:30112007551432

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Silicon Device Processing by Charles P. Marsden Pdf

The objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).

Author : Dinesh C. Gupta
Publisher : ASTM International
Page : 472 pages
File Size : 55,9 Mb
Release : 1989
Category : Metallizing
ISBN : 9780803112735

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Semiconductor Fabrication by Dinesh C. Gupta Pdf

Author : S. Furukawa
Publisher : Springer
Page : 312 pages
File Size : 48,5 Mb
Release : 1985-05-31
Category : Science
ISBN : UOM:39015009799753

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Silicon-on-Insulator by S. Furukawa Pdf

This volume contains papers presented during the US-Japan seminar on "Solid Phase Epitaxy and Interface Kinetics" held in Oiso, Japan, June 20-24, 1983. This seminar was co-sponsored by the National Science Foun dation and Japan Society for the Promotion of Science and co-chaired by Professor S. Furukawa, Tokyo Insitute of Technology, and Professor J. W. Mayer, Cornell University. Extensive topics such as solid phase epitaxy, growth mechanisms and interface kinetics, silicon-on-insulator structures, silicide-on-Si sturctures, novel nanometer and layered devices, and so on were discussed and more than 50 papers were presented. Most papers were original ones with brief reviews added for the convenience of the readers at the editor's request. The editor classified these papers into two groups and compiled two volumes; "Silicon-on-Insulator (SOl): Its Technology and Applications" and "Layered Structures and Interface Kinetics: Their Technology and Ap plications". This volume mainly contains the papers related to epitaxial growth of metal, insulator and semiconductor films, growth mechanisms, interface kinetics, properties and applications of silicide films, and novel nanometer and layered devices. These papers offer basic properties of the layered structures and possibility of various applications of the structures to present and future semiconductor devices. The editor is indebted to our fellow contributors who agreed to par take in publishing the proceedings of the seminar, to Japanese principal par ticipants of the seminar for encouraging him to have the seminar and to compile these volumes, to Professor H. Ishiwara for his secretarial work throughout the seminar and the publication.

Author : Anonim
Publisher : Unknown
Page : 874 pages
File Size : 45,8 Mb
Release : 1977
Category : Solar energy
ISBN : UOM:39015024361373

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Solar Energy Update by Anonim Pdf

Author : Wolfgang Menz,Jürgen Mohr,Oliver Paul
Publisher : John Wiley & Sons
Page : 512 pages
File Size : 40,8 Mb
Release : 2008-07-11
Category : Technology & Engineering
ISBN : 9783527613014

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Microsystem Technology by Wolfgang Menz,Jürgen Mohr,Oliver Paul Pdf

This completely revised edition of a bestselling concise introduction to microsystems technology includes the latest trends in this emerging scientific discipline. The chapters on silicium and LIGA technology are greatly expanded, whilst new topics include application aspects in medicine and health technology, lithography and electroplating.

Author : Markku Tilli,Mervi Paulasto-Krockel,Teruaki Motooka,Veikko Lindroos
Publisher : William Andrew
Page : 826 pages
File Size : 45,8 Mb
Release : 2015-09-02
Category : Technology & Engineering
ISBN : 9780323312233

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Handbook of Silicon Based MEMS Materials and Technologies by Markku Tilli,Mervi Paulasto-Krockel,Teruaki Motooka,Veikko Lindroos Pdf

The Handbook of Silicon Based MEMS Materials and Technologies, Second Edition, is a comprehensive guide to MEMS materials, technologies, and manufacturing that examines the state-of-the-art with a particular emphasis on silicon as the most important starting material used in MEMS. The book explains the fundamentals, properties (mechanical, electrostatic, optical, etc.), materials selection, preparation, manufacturing, processing, system integration, measurement, and materials characterization techniques, sensors, and multi-scale modeling methods of MEMS structures, silicon crystals, and wafers, also covering micromachining technologies in MEMS and encapsulation of MEMS components. Furthermore, it provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques, shows how to protect devices from the environment, and provides tactics to decrease package size for a dramatic reduction in costs. Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques Shows how to protect devices from the environment and decrease package size for a dramatic reduction in packaging costs Discusses properties, preparation, and growth of silicon crystals and wafers Explains the many properties (mechanical, electrostatic, optical, etc.), manufacturing, processing, measuring (including focused beam techniques), and multiscale modeling methods of MEMS structures Geared towards practical applications rather than theory

Author : Yoshio Nishi,Robert Doering
Publisher : CRC Press
Page : 1720 pages
File Size : 49,9 Mb
Release : 2017-12-19
Category : Technology & Engineering
ISBN : 9781420017663

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Handbook of Semiconductor Manufacturing Technology by Yoshio Nishi,Robert Doering Pdf

Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.

Author : Fumio Shimura
Publisher : Elsevier
Page : 435 pages
File Size : 50,6 Mb
Release : 2012-12-02
Category : Technology & Engineering
ISBN : 9780323150484

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Semiconductor Silicon Crystal Technology by Fumio Shimura Pdf

Semiconductor Silicon Crystal Technology provides information pertinent to silicon, which is the dominant material in the semiconductor industry. This book discusses the technology of integrated circuits (ICs) in electronic materials manufacturer. Comprised of eight chapters, this book provides an overview of the basic science, silicon materials, IC device fabrication processes, and their interaction for enhancing both the processes and materials. This text then proceeds with a discussion of the atomic structure and bonding mechanisms in order to understand the nature and formation of crystal structures, which are the fundamentals of material science. Other chapters consider the technological crystallography and classify natural crystal morphologies based on observation. The final chapter deals with the interrelationships among silicon material characteristics, circuit design, and IC fabrication in order to ensure the fabrication of very-large-scale-integration/ultra-large-scale-integration circuits. This book is a valuable resource for graduate students, physicists, engineers, materials scientists, and professionals involved in semiconductor industry.

Author : William C. O'Mara,Robert B. Herring,Lee Philip Hunt
Publisher : William Andrew
Page : 826 pages
File Size : 50,5 Mb
Release : 1990-12-31
Category : Science
ISBN : UOM:39015018468192

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Handbook of Semiconductor Silicon Technology by William C. O'Mara,Robert B. Herring,Lee Philip Hunt Pdf

A summary of the science, technology, and manufacturing of semiconductor silicon materials. Properties of silicon are detailed, and a set of silicon binary phase diagrams is included. Other aspects such as materials handling, safety, impurity, and defect reduction are also discussed.

Author : John D. Cressler
Publisher : CRC Press
Page : 425 pages
File Size : 49,6 Mb
Release : 2017-12-19
Category : Technology & Engineering
ISBN : 9781351834797

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SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices by John D. Cressler Pdf

What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.