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The Physics of Semiconductors by Marius Grundmann Pdf
Brings the reader to an overview of the subject as a whole and to the point where they can specialize and enter supervised laboratory research Provides a balance between aspects of solid state and semiconductor physics and the concepts of various semiconductor devices and their applications in electric and photonic devices. Proffers explicit formulas (with the help of Mathematica) for as many as possible results, going beyond current textbook equations, thus makes easier to understand for undergrads.
Ferroelectrics Literature Index by T. F. Connolly Pdf
Research on ferroelectricity and ferroelectric materials started in 1920 with the discovery by Valasek that the variation of spontaneous polarization in Rochelle salt with sign and magnitude of an applied electric field traced a complete and reproducible hysteresis loop. Activity in the field was sporadic until 1935, when Busch and co-workers announced the observation of similar behavior in potassium dihydrogen phosphate and related compounds. Progress thereafter continued at a modest level with the undertaking of some theoretical as well as further experimental studies. In 1944, von Hippel and co-workers discovered ferroelectricity in barium titanate. The technological importance of ceramic barium titanate and other perovskites led to an upsurge of interest, with many new ferroelectrics being identified in the following decade. By 1967, about 2000 papers on various aspects of ferroelectricity had been published. The bulk of this widely dispersed literature was concerned with the experimental measurement of dielectric, crystallographic, thermal, electromechanical, elastic, optical, and magnetic properties. A critical and excellently organized cpmpilation based on these data appeared in 1969 with the publica tion of Landolt-Bornstein, Volume 111/3. This superb tabulation gave instant access to the results in the literature on nearly 450 pure substances and solid solutions of ferroelectric and antiferroelectric materials. Continuing interest in ferroelectrics, spurred by the growing importance of electrooptic crystals, resulted in the publication of almost as many additional papers by the end of 1969 as had been surveyed in Landolt-Bornstein.
Quantum Physics of Semiconductor Materials and Devices by Debdeep Jena Pdf
"Quantum Phenomena do not occur in a Hilbert space. They occur in a laboratory". - Asher Peres Semiconductor physics is a laboratory to learn and discover the concepts of quantum mechanics and thermodynamics, condensed matter physics, and materials science, and the payoffs are almost immediate in the form of useful semiconductor devices. Debdeep Jena has had the opportunity to work on both sides of the fence - on the fundamental materials science and quantum physics of semiconductors, and in their applications in semiconductor electronic and photonic devices. In Quantum Physics of Semiconductors and Nanostructures, Jena uses this experience to make each topic as tangible and accessible as possible to students at all levels. Consider the simplest physical processes that occur in semiconductors: electron or hole transport in bands and over barriers, collision of electrons with the atoms in the crystal, or when electrons and holes annihilate each other to produce a photon. The correct explanation of these processes require a quantum mechanical treatment. Any shortcuts lead to misconceptions that can take years to dispel, and sometimes become roadblocks towards a deeper understanding and appreciation of the richness of the subject. A typical introductory course on semiconductor physics would then require prerequisites of quantum mechanics, statistical physics and thermodynamics, materials science, and electromagnetism. Rarely would a student have all this background when (s)he takes a course of this nature in most universities. Jena's work fills in these gaps and gives students the background and deeper understanding of the quantum physics of semiconductors and nanostructures.
Ferroelectric Materials for Energy Applications by Haitao Huang,James F. Scott Pdf
Provides a comprehensive overview of the emerging applications of ferroelectric materials in energy harvesting and storage Conventional ferroelectric materials are normally used in sensors and actuators, memory devices, and field effect transistors, etc. Recent progress in this area showed that ferroelectric materials can harvest energy from multiple sources including mechanical energy, thermal fluctuations, and light. This book gives a complete summary of the novel energy-related applications of ferroelectric materials?and reviews both the recent advances as well as the future perspectives in this field. Beginning with the fundamentals of ferroelectric materials, Ferroelectric Materials for Energy Applications offers in-depth chapter coverage of: piezoelectric energy generation; ferroelectric photovoltaics; organic-inorganic hybrid perovskites for solar energy conversion; ferroelectric ceramics and thin films in electric energy storage; ferroelectric polymer composites in electric energy storage; pyroelectric energy harvesting; ferroelectrics in electrocaloric cooling; ferroelectric in photocatalysis; and first-principles calculations on ferroelectrics for energy applications. -Covers a highly application-oriented subject with great potential for energy conversion and storage applications. -Focused toward a large, interdisciplinary group consisting of material scientists, solid state physicists, engineering scientists, and industrial researchers -Edited by the "father of integrated ferroelectrics" Ferroelectric Materials for Energy Applications is an excellent book for researchers working on ferroelectric materials and energy materials, as well as engineers looking to broaden their view of the field.
Author : V. Alexander Stefan Publisher : Stefan University Press Page : 218 pages File Size : 53,5 Mb Release : 2002-08-16 Category : Ferroelectric crystals ISBN : 9781889545288
CONTENTS Preface, XI List of Contributors, XIII Part I. REPORTS. Materials Parameters Determining the Performance of 3-3 Piezocomposites C.R. Bowen, A. Perry, R. Stevens, and S. Mahon.............................................. 3 Dielectric Permittivity and Hysteresis of PZT Aerogels Stefan Geis, Jochen Fricke................................................................................ 23 Superfine Anomalies of the Cubic-Tetragonal Transition in the Perovskite-Type Ferroelectrics Detected by “mk-stabilized cell” Akira Kojima, Yukio Yoshimura, Hiroshi Iwasaki, and Ken-ichi Tozaki.......................................................................................... 33 NMR Study on m3h(seo4)2 (m: k, rb) Yasumitsu Matsuo, Keisuke Takahashi, and Seiichiro Ikehata............................. 51 Photovoltaic Effect in Pb(Zr,Ti)O3 (PZT)-Based Ceramics and Development for Photostrictor Application Kazuhiro Nonaka, Morito Akiyama, Chao-Nan Xu, Tsuyoshi Hagio, and Akira Takase.................................................................... 65 Novel Electronic Phase Transition in ii-vi Ferroelectric Semiconductor znO A. Onodera and H. Satoh................................................................................. 93 Brillouin Scattering Study of Structural Phase Transition in the kno3 Crystal Yasunari Takagi............................................................................................... 113 New Technologies for Future FeRAMs K. Uchiyama, M. Kazumura, Y. Shimada, T. Otsuki, N. Solayappan, V. Joshi, and C.A. Paz de Araujo............................................... 125 NANOCRYSTALLINE PEROVSKITE FILMS: FERROELECTRICS AND RELAXORS C. Ziebert, J.K. Krüger, H. Schmitt, A. Sternberg K.-H. Ehses, M. Marx................................................................................... 135 Part II. BRIEF REPORTS Studies of Ferroelectric Thin Film and Film-Based Device Processes via In Situ Analytic Techniques O. Auciello, S.K. Streiffer, G.B. Stephenson, J.A. Eastman, G. Bai, A.R. Krauss, J. Im, A.M. Dhote, C. Thompson, E.A. Irene, Y. Gao, A.H. Muller, M.J. Bedzyk, A. Kazimirov, D. Marasco, V.P. Dravid, A. Gruverman, S. Aggarwal, R. Ramesh, S.-H. Kim, A.I. Kingon, and C.B. Eom.................................................................................................. 155 The Spherical Random Bond – Random Field Model of Relaxor Ferroelectrics: Theory and Experiments R. Blinc, R. Pirc, B. Zalar, and A. Gregorovic.................................................... 159 Stabilization of Ferroelectricity in Quantum Paraelectrics by Isotopic Substitution A. Bussmann-Holder, H. Buttner, and A.R. Bishop............................................ 165 New Understanding of the Phases Transition Mechanism of Hydrogen-Bonded Ferroelectrics A. Bussmann-Holder, Naresh Dalal, Riqiang Fu, and Ricardo Migoni................... 167 Two Dimensional Ferroelectrics V.M. Fridkin, L.M. Blinov, S.P. Palto, S.G. Yudin, S. Ducharme, P.A. Dowben, and A.V. Bune.......................................................................... 169 Ferroelastic Twinning in Some Extremely Plastic Crystals Lyubov Kirpichnikova....................................................................................... 171 Investigation of the Anisotropy of srbi2ta2o9 and srbi2nb2o9 Through Epitaxial Growth J. Lettieri, M.A. Zurbuchen, Y. Jia, D.G. Schlom, S.K. Streiffer, and M.E. Hawley............................................................................................. 173 New Ideas in Relaxor Theory R.F. Mamin..................................................................................................... 179 Evaluation of Ferroelectric Domains in Lead Zirconate Titanate Ceramics by Poling Fields Toshio Ogawa.................................................................................................. 181 Metal-Organic Chemical Vapor Deposited Ceramic Thin Films for Future Memory Applications M. Schumacher, J. Lindner, F. Schienle, D. Burgess, P. Strzyzewski, M. Dauelsberg, E. Merz, and H. Juergensen............................... 185 Dynamic and Static Aspects of the Antiferroelectric Phase Transition in rb3h1-xdx(so4)2 Crystals: An 87rb-nmr Study Andreas Titze and Roland Boehmer.................................................................. 187 Key Word Index………………………………………………………………………. 189 Contents of FERROELECTRICS.Vol.2. Frontier in Science and Technology Series. List of Titles. FSRC BOOKS of ABSTRACTS in Science and Technology Conference Series. List of Titles. F S R C. A Brief Info.
Solar Fuels by Nurdan Demirci Sankir,Mehmet Sankir Pdf
The most important obstacle to solar meeting all our energy needs is that solar energy is not always accessible and therefore cannot be used when needed. Therefore, the conversion of solar energy into chemical energy, which has become more and more important in recent years, is a groundbreaking topic in the field of renewable energy. This type of chemical energy is called solar fuel. Hydrogen, methanol, methane, and carbon monoxide are among the solar fuels, which can be produced via solar-thermal, artificial photosynthesis, photocatalytic or photoelectrochemical routes. The Advances in Solar Cell Materials and Storage series aims to provide information on new and cutting-edge materials, advanced solar cell designs and architecture, and new concepts in photovoltaic conversion and storage. Solar Fuels, which is the third volume of this series, compiles the objectives related to the new semiconductor materials and manufacturing techniques for solar fuel generation. Chapters are written by distinguished authors who have extensive experience in their fields. A multidisciplinary contributor profile including chemical engineering, materials science, environmental engineering, and mechanical and aerospace engineering provides a broader point of view and coverage of the topic. Therefore, readers absolutely will have a chance to learn about not only the fundamentals but also the various aspects of the materials science and manufacturing technologies for solar fuel production. Moreover, readers from diverse fields will definitely take advantage of this book to comprehend the impacts of solar energy conversion in chemical form.
Advances in Ferroelectrics by Aimé Peláiz-Barranco Pdf
Ferroelectricity is one of the most studied phenomena in the scientific community due the importance of ferroelectric materials in a wide range of applications including high dielectric constant capacitors, pyroelectric devices, transducers for medical diagnostic, piezoelectric sonars, electrooptic light valves, electromechanical transducers and ferroelectric random access memories. Actually the ferroelectricity at nanoscale receives a great attention to the development of new technologies. The demand for ferroelectric systems with specific applications enforced the in-depth research in addition to the improvement of processing and characterization techniques. This book contains twenty two chapters and offers an up-to-date view of recent research into ferroelectricity. The chapters cover various formulations, their forms (bulk, thin films, ferroelectric liquid crystals), fabrication, properties, theoretical topics and ferroelectricity at nanoscale.
Ferroelectric Crystals for Photonic Applications by Pietro Ferraro,Simonetta Grilli,Paolo De Natale Pdf
This book deals with the latest achievements in the field of ferroelectric domain engineering and characterization at micro- and nano-scale dimensions and periods. The book collects the results obtained in the last years by world scientific leaders in the field, thus providing a valid and unique overview of the state-of-the-art and also a view to future applications of those engineered and used materials in the field of photonics. The second edition covers the major aspects of ferroelectric domain engineering and combines basic research and latest updated applications such as challenging results by introducing either new as well as extended chapters on Photonics Crystals based on Lithium Niobate and Lithium Tantalate crystals; generation, visualization and controlling of THz radiation; latest achievements on Optical Parametric Oscillators for application in precise spectroscopy. Further more recent advancements in characterization by probe scanning microscopy and optical methods with device and technological orientation. A state-of-the-art report on periodically poled processes and their characterization methods are provided on different materials (LiNbO3, KTP) furnishing update research on ferroelectric crystal by extending materials research and applications.
Switching Kinetics and Charge Transport in Organic Ferroelectrics by Tim Cornelissen Pdf
The continued digitalization of our society means that more and more things are getting connected electronically. Since currently used inorganic electronics are not well suited for these new applications because of costs and environmental issues, organic electronics can play an important role here. These essentially plastic materials are cheap to produce and relatively easy to recycle. Unfortunately, their poor performance has so far hindered widespread application beyond displays. One key component of any electronic device is the memory. For organic electronics several technologies are being investigated that could serve as memories. One of these are the ferroelectrics, materials that have a spontaneous electrical polarization that can be reversed with an electric field. This bistable polarization which shows hysteresis makes these materials excellent candidates for use as memories. This thesis focuses on a specific type of organic ferroelectric, the supramolecular discotics. These materials consist of disk?like molecules that form columns in which all dipolar groups are aligned, giving a macroscopic ferroelectric polarization. Of particular interest are the benzenetricarboxamides (BTA), which are used as a model system for the whole class of discotic ferroelectrics. BTA uses a core?shell architecture which allows for easy modification of the molecular structure and thereby the ferroelectric properties. To gain a deeper understanding of the switching processes in this organic ferroelectric BTA, both microscopic and analytical modeling are used. This is supported by experimental data obtained through electrical characterization. The microscopic model reduces the material to a collection of dipoles and uses electrostatics to calculate the probability that these dipoles flip. These flipping rates are the input for a kinetic Monte Carlo simulation (kMC), which simulates the behavior of the dipoles over time. With this model we simulated three different switching processes on experimental time and length scales: hysteresis loops, spontaneous depolarization, and switching transients. The results of these simulations showed a good agreement with experiments and we can rationalize the obtained parameter dependencies in the framework of thermally activated nucleation limited switching (TA?NLS). The microscopic character of the model allows for a unique insight into the nucleation process of the polarization switching. We found that nucleation happens at different locations for field driven polarization switching as compared to spontaneous polarization switching. Field?driven nucleation happens at the contacts, whereas spontaneous depolarization starts at defects. This means that retention times in disordered ferroelectrics could be improved by reducing the disorder, without affecting the coercive field. Detailed analysis of the nucleation process also revealed a critical nucleation volume that decreases with applied field, which explains the Merz?like field?dependence of the switching time observed in experiments. In parallel to these microscopic simulations we developed an analytical framework based on the theory of TA?NLS. This framework is mainly focused on describing the switching transients of disordered ferroelectrics. It can be combined with concepts of the Preisach model, which considers a non?ideal ferroelectric as a collection of ideal hysterons. We were able to relate these hysterons and the distribution in their up? and down?switching fields to the microscopic structure of the material and use the combined models to explain experimentally observed dispersive switching kinetics. Whereas ferroelectrics on their own could potentially serve as memories, the readout of ferroelectric memories becomes easier if they are combined with semiconductors. We have introduced several molecular materials following the same design principle of a core?shell structure, which uniquely combine ferroelectricity and semiconductivity in one material. The experimental IV?curves of these materials could be described using an asymmetric Marcus hopping model and show their potential as memories. The combination of modeling and experimental work in this thesis thereby provides an increased understanding of organic ferroelectrics, which is crucial for their application as memories.
Since Valasek's discovery of the ferroelectric properties of Rochelle salt nearly 60 years ago, ferroelectricity has been regarded as one of the tradi tional branches of dielectric physics. It has had important applications in lattice dynamics, quantum electronics, and nonlinear optics. The study of electron processes in ferroelectrics was begun with VUL's investigations of the ferroelectric properties of barium titanate [1.1]. In trinsic and extrinsic optical absorption, band structure, conductivity and photoconductivity, carrier mobility. and transport mechanisms were examined in this compound, and in other perovskite ferroelectric semiconductors. An important discovery was that of the highly photosensitive photoconducting ferroelectrics of type AVBVICVIII (e.g. SbSI) by MERZ et al. in 1962 [1.2,3]. A large number of ferroelectric semiconductors (some photosensitive, some not) are now known, including broad-band materials (e.g. lithium niobate, lithium tantalate, barium and strontium niobate, and type-A~B~I compounds), BI and narrow-band semiconductors (e.g. type_AIVB compounds). A series of improper ferroelectric semiconductors and photosensitive ferroelastics have been discovered, of which Sb 0 I is an example. s 7 Owing to the uncertainty of their band structure, the difficulty in deter mining the nature of the levels, the complexity of alloying, and their gen erally low mobility values, ferroelectrics are rarely of interest regarded as nonlinear semiconductors. The most fruitful approach has been the study of the influence of electrons (especially nonequilibrium electrons) and electron excitations on phase transitions and ferroelectric properties. A large group of phenomena have recently been discovered and investigated.
Using the nano metric resolution of atomic force microscopy techniques, this work explores the rich fundamental physics and novel functionalities of domain walls in ferroelectric materials, the nano scale interfaces separating regions of differently oriented spontaneous polarization. Due to the local symmetry-breaking caused by the change in polarization, domain walls are found to possess an unexpected lateral piezoelectric response, even when this is symmetry-forbidden in the parent material. This has interesting potential applications in electromechanical devices based on ferroelectric domain patterning. Moreover, electrical conduction is shown to arise at domain walls in otherwise insulating lead zirconate titanate, the first such observation outside of multiferroic bismuth ferrite, due to the tendency of the walls to localize defects. The role of defects is then explored in the theoretical framework of disordered elastic interfaces possessing a characteristic roughness scaling and complex dynamic response. It is shown that the heterogeneous disorder landscape in ferroelectric thin films leads to a breakdown of the usual self-affine roughness, possibly related to strong pinning at individual defects. Finally, the roles of varying environmental conditions and defect densities in domain switching are explored and shown to be adequately modelled as a competition between screening effects and pinning.
Domain Walls by Dennis Meier,Jan Seidel,Marty Gregg,Ramamoorthy Ramesh Pdf
Technological evolution and revolution are both driven by the discovery of new functionalities, new materials and the design of yet smaller, faster, and more energy-efficient components. Progress is being made at a breathtaking pace, stimulated by the rapidly growing demand for more powerful and readily available information technology. High-speed internet and data-streaming, home automation, tablets and smartphones are now "necessities" for our everyday lives. Consumer expectations for progressively more data storage and exchange appear to be insatiable. Oxide electronics is a promising and relatively new field that has the potential to trigger major advances in information technology. Oxide interfaces are particularly intriguing. Here, low local symmetry combined with an increased susceptibility to external fields leads to unusual physical properties distinct from those of the homogeneous bulk. In this context, ferroic domain walls have attracted recent attention as a completely new type of oxide interface. In addition to their functional properties, such walls are spatially mobile and can be created, moved, and erased on demand. This unique degree of flexibility enables domain walls to take an active role in future devices and hold a great potential as multifunctional 2D systems for nanoelectronics. With domain walls as reconfigurable electronic 2D components, a new generation of adaptive nano-technology and flexible circuitry becomes possible, that can be altered and upgraded throughout the lifetime of the device. Thus, what started out as fundamental research, at the limit of accessibility, is finally maturing into a promising concept for next-generation technology.
