Gallium Nitride And Silicon Carbide Power Devices

Author : B Jayant Baliga
Publisher : World Scientific Publishing Company
Page : 592 pages
File Size : 51,9 Mb
Release : 2016-12-12
Category : Electronic
ISBN : 9789813109421

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Gallium Nitride and Silicon Carbide Power Devices by B Jayant Baliga Pdf

During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies. This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities. Request Inspection Copy

Author : B. Jayant Baliga
Publisher : Unknown
Page : 128 pages
File Size : 43,7 Mb
Release : 2017
Category : Electronic
ISBN : 9813109416

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Gallium Nitride and Silicon Carbide Power Devices by B. Jayant Baliga Pdf

Author : Kazuhiro Mochizuki
Publisher : Artech House
Page : 308 pages
File Size : 44,8 Mb
Release : 2018-04-30
Category : Technology & Engineering
ISBN : 9781630814298

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Vertical GaN and SiC Power Devices by Kazuhiro Mochizuki Pdf

This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices. Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource.

Author : K. Shenai,M. Dudley,R. Garg,A. Khan,R. Ma
Publisher : The Electrochemical Society
Page : 361 pages
File Size : 52,6 Mb
Release : 2011
Category : Electronic
ISBN : 9781607682622

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Gallium Nitride and Silicon Carbide Power Technologies by K. Shenai,M. Dudley,R. Garg,A. Khan,R. Ma Pdf

Author : B. Jayant Baliga
Publisher : World Scientific
Page : 526 pages
File Size : 44,7 Mb
Release : 2005
Category : Technology & Engineering
ISBN : 9789812774521

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Silicon Carbide Power Devices by B. Jayant Baliga Pdf

Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.

Author : K. Shenai,M. Dudley,M. Bakowski,N. Ohtani
Publisher : The Electrochemical Society
Page : 312 pages
File Size : 44,9 Mb
Release : 2024-06-15
Category : Electronic
ISBN : 9781607685449

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Gallium Nitride and Silicon Carbide Power Technologies 4 by K. Shenai,M. Dudley,M. Bakowski,N. Ohtani Pdf

Author : M. Dudley,M. Bakowski,N. Ohtani,B. Raghothamachar,K. Shenai
Publisher : The Electrochemical Society
Page : 297 pages
File Size : 45,9 Mb
Release : 2024-06-15
Category : Electronic
ISBN : 9781607688242

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Gallium Nitride and Silicon Carbide Power Technologies 7 by M. Dudley,M. Bakowski,N. Ohtani,B. Raghothamachar,K. Shenai Pdf

Author : B Jayant Baliga
Publisher : World Scientific
Page : 671 pages
File Size : 40,6 Mb
Release : 2023-09-18
Category : Technology & Engineering
ISBN : 9789811284298

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Modern Silicon Carbide Power Devices by B Jayant Baliga Pdf

Silicon Carbide power devices are being increasingly adopted for many applications such as electric vehicles and charging stations. There is a large demand for a resource to learn and understand the basic physics of operation of these devices to create engineers with in depth knowledge about them.This unique compendium provides a comprehensive design guide for Silicon Carbide power devices. It systematically describes the device structures and analytical models for computing their characteristics. The device structures included are the Schottky diode, JBS rectifier, power MOSFET, JBSFET, IGBT and BiDFET. Unique structures that address achieving excellent voltage blocking and on-resistance are emphasized.This useful textbook and reference innovations for achieving superior high frequency operation and highlights manufacturing technology for the devices. The book will benefit professionals, academics, researchers and graduate students in the fields of electrical and electronic engineering, circuits and systems, semiconductors, and energy studies.

Author : Hongyu Yu,Tianli Duan
Publisher : CRC Press
Page : 298 pages
File Size : 53,8 Mb
Release : 2017-07-06
Category : Science
ISBN : 9781351767613

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Gallium Nitride Power Devices by Hongyu Yu,Tianli Duan Pdf

GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

Author : M. Dudley,M. Bakowski,K. Shenai,N. Ohtani,B. Raghothamachar
Publisher : The Electrochemical Society
Page : 122 pages
File Size : 43,6 Mb
Release : 2018-09-21
Category : Science
ISBN : 9781607688594

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Gallium Nitride and Silicon Carbide Power Technologies 8 by M. Dudley,M. Bakowski,K. Shenai,N. Ohtani,B. Raghothamachar Pdf

Author : Electrochemical Society (United States). Dielectric Science and Technology Division,Electrochemical Society Electronics and Photonics Division
Publisher : ECS Transactions
Page : 351 pages
File Size : 42,9 Mb
Release : 2011-10
Category : Electronic
ISBN : 1566779081

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Gallium Nitride and Silicon Carbide Power Technologies by Electrochemical Society (United States). Dielectric Science and Technology Division,Electrochemical Society Electronics and Photonics Division Pdf

This issue of ECS Transactions covers state-of-the-art of GaN and SiC material and device technologies for power switching and power amplification applications.

Author : Electrochemical Society,Electrochemical Society (United States). Electronics and Photonics Division
Publisher : Unknown
Page : 466 pages
File Size : 55,5 Mb
Release : 2013
Category : Electronic
ISBN : 162332095X

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Gallium Nitride and Silicon Carbide Power Technologies 3 by Electrochemical Society,Electrochemical Society (United States). Electronics and Photonics Division Pdf

Author : B. Jayant Baliga
Publisher : Woodhead Publishing
Page : 418 pages
File Size : 44,7 Mb
Release : 2018-10-17
Category : Technology & Engineering
ISBN : 9780081023075

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Wide Bandgap Semiconductor Power Devices by B. Jayant Baliga Pdf

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Author : Randall M. Feenstra,Colin E. C. Wood
Publisher : John Wiley & Sons
Page : 332 pages
File Size : 43,5 Mb
Release : 2008-04-15
Category : Technology & Engineering
ISBN : 0470751827

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Porous Silicon Carbide and Gallium Nitride by Randall M. Feenstra,Colin E. C. Wood Pdf

Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more

Author : Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni
Publisher : Springer
Page : 380 pages
File Size : 49,6 Mb
Release : 2016-09-08
Category : Technology & Engineering
ISBN : 9783319431994

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Power GaN Devices by Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni Pdf

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.