Handbook Of Gan Semiconductor Materials And Devices

Author : Wengang Bi
Publisher : Unknown
Page : 128 pages
File Size : 42,8 Mb
Release : 2017
Category : Electronic books
ISBN : 1351638521

Get Book

Handbook of GaN Semiconductor Materials and Devices by Wengang Bi Pdf

"This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics.Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China.Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA.Bo Shen is the Cheung Kong Professor at Peking University in China. "--Provided by publisher.

Author : Wengang (Wayne) Bi,Haochung (Henry) Kuo,Peicheng Ku,Bo Shen
Publisher : CRC Press
Page : 709 pages
File Size : 53,9 Mb
Release : 2017-10-20
Category : Science
ISBN : 9781498747141

Get Book

Handbook of GaN Semiconductor Materials and Devices by Wengang (Wayne) Bi,Haochung (Henry) Kuo,Peicheng Ku,Bo Shen Pdf

This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

Author : Wengang (Wayne) Bi,Haochung (Henry) Kuo,Peicheng Ku,Bo Shen
Publisher : CRC Press
Page : 984 pages
File Size : 43,5 Mb
Release : 2017-10-20
Category : Science
ISBN : 9781351648059

Get Book

Handbook of GaN Semiconductor Materials and Devices by Wengang (Wayne) Bi,Haochung (Henry) Kuo,Peicheng Ku,Bo Shen Pdf

This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

Author : Pierre Ruterana,Martin Albrecht,Jörg Neugebauer
Publisher : John Wiley & Sons
Page : 686 pages
File Size : 44,9 Mb
Release : 2006-05-12
Category : Science
ISBN : 9783527607402

Get Book

Nitride Semiconductors by Pierre Ruterana,Martin Albrecht,Jörg Neugebauer Pdf

Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currently the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components. This collection of review articles provides a systematic and in-depth overview of the topic, on both a high and current level. It offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.

Author : Hadis Morkoç
Publisher : John Wiley & Sons
Page : 902 pages
File Size : 40,5 Mb
Release : 2009-07-30
Category : Technology & Engineering
ISBN : 9783527628452

Get Book

Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices by Hadis Morkoç Pdf

The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 3 deals with nitride semiconductor devices and device technology. Among the application areas that feature prominently here are LEDs, lasers, FETs and HBTs, detectors and unique issues surrounding solar blind detection.

Author : Hadis Morkoç
Publisher : Unknown
Page : 800 pages
File Size : 48,7 Mb
Release : 2009-01
Category : Science
ISBN : 3540469303

Get Book

Handbook of Nitride Semiconductors and Devices by Hadis Morkoç Pdf

The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with a clarity and depth not found elsewhere. The handbooks present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. They also deal with the properties and processes for thermal, optical (3-, 2-, 1-, 0-dimensional systems), electrical (at low- and high-electric fields, low- and high-magnetic fields for 3- and 2-dimensional systems), magnetism and magnetic properties (in dilute magnetic ion doped compounds) and spin-based device concepts. The associated measurement methods for each material deposition are discussed. The present volume 3 deals with nitride semiconductor devices and device technology. Among the applications areas that feature prominently are LEDs, lasers (including recording), FETs and HBTs (including novel treatment of fundamentals and hot phonon processes affecting the velocity), detectors and unique issues surrounding solar blind detection. This comprehensive handbook provides all interested researchers and engineers with an accessible treatment of this important class of materials.

Author : Hadis Morkoç
Publisher : John Wiley & Sons
Page : 1311 pages
File Size : 41,9 Mb
Release : 2009-07-30
Category : Technology & Engineering
ISBN : 9783527628469

Get Book

Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth by Hadis Morkoç Pdf

The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.

Author : Hadis Morkoç
Publisher : John Wiley & Sons
Page : 883 pages
File Size : 48,6 Mb
Release : 2009-07-30
Category : Technology & Engineering
ISBN : 9783527628421

Get Book

Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides by Hadis Morkoç Pdf

The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors.

Author : Michael E. Levinshtein,Sergey L. Rumyantsev,Michael S. Shur
Publisher : John Wiley & Sons
Page : 220 pages
File Size : 43,5 Mb
Release : 2001-02-21
Category : Technology & Engineering
ISBN : 0471358274

Get Book

Properties of Advanced Semiconductor Materials by Michael E. Levinshtein,Sergey L. Rumyantsev,Michael S. Shur Pdf

Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.

Author : M S Shur,R F Davis
Publisher : World Scientific
Page : 300 pages
File Size : 48,9 Mb
Release : 2004-05-07
Category : Technology & Engineering
ISBN : 9789814482691

Get Book

GaN-Based Materials and Devices by M S Shur,R F Davis Pdf

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property. This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology. Contents:Materials:Materials Properties of Nitrides. Summary (S L Rumyantsev et al.)Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy (A M Roskowski et al.)Cracking of GaN Films (E V Etzkorn & D R Clarke)Transport and Noise Properties:Quasi-Ballistic and Overshoot Transport in Group III-Nitrides (K W Kim et al.)High Field Transport in AIN (R Collazo et al.)Generation-Recombination Noise in GaN-Based Devices (S L Rumyantsev et al.)Devices:Insulated Gate III-N Heterostructure Field-Effect Transistors (G Simin et al.)High Voltage AlGaN/GaN Heterojunction Transistors (L S McCarthy et al.)Etched Aperture GaN Cavet Through Photoelectrochemical Wet Etching (Y Gao et al.)and other papers Readership: Undergraduates, graduate students, academics, researchers and practitioners in semiconductor science and materials engineering. Keywords:Nitrides;Power Switches;Substrates;Device Fabrication;TransistorsKey Features:Unique feature: extensive coverage of issues ranging from materials growth and characterization to devices

Author : Osamu Ueda,Stephen J. Pearton
Publisher : Springer Science & Business Media
Page : 618 pages
File Size : 43,7 Mb
Release : 2012-09-24
Category : Technology & Engineering
ISBN : 9781461443360

Get Book

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices by Osamu Ueda,Stephen J. Pearton Pdf

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.

Author : Yue Hao,Jin Feng Zhang,Jin Cheng Zhang
Publisher : CRC Press
Page : 325 pages
File Size : 44,8 Mb
Release : 2016-11-03
Category : Computers
ISBN : 9781315351834

Get Book

Nitride Wide Bandgap Semiconductor Material and Electronic Devices by Yue Hao,Jin Feng Zhang,Jin Cheng Zhang Pdf

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Author : Hadis Morkoç
Publisher : Unknown
Page : 0 pages
File Size : 48,7 Mb
Release : 2008
Category : Nitrides
ISBN : OCLC:441887037

Get Book

Handbook of Nitride Semiconductors and Devices by Hadis Morkoç Pdf

Author : Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni
Publisher : Springer
Page : 380 pages
File Size : 45,7 Mb
Release : 2016-09-08
Category : Technology & Engineering
ISBN : 9783319431994

Get Book

Power GaN Devices by Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni Pdf

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Author : Zhe Chuan Feng
Publisher : CRC Press
Page : 449 pages
File Size : 55,9 Mb
Release : 2012-09-26
Category : Science
ISBN : 9781000687149

Get Book

Handbook of Zinc Oxide and Related Materials by Zhe Chuan Feng Pdf

Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering a