Properties Of Advanced Semiconductor Materials

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Properties of Advanced Semiconductor Materials

Author : Michael E. Levinshtein,Sergey L. Rumyantsev,Michael S. Shur
Publisher : John Wiley & Sons
Page : 220 pages
File Size : 55,6 Mb
Release : 2001-02-21
Category : Technology & Engineering
ISBN : 0471358274

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Properties of Advanced Semiconductor Materials by Michael E. Levinshtein,Sergey L. Rumyantsev,Michael S. Shur Pdf

Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.

Properties of Advanced Semiconductor Materials

Author : Michael E. Levinshtein,Sergey L. Rumyantsev,Michael S. Shur
Publisher : Wiley-Interscience
Page : 0 pages
File Size : 54,7 Mb
Release : 2001-02-21
Category : Technology & Engineering
ISBN : 0471358274

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Properties of Advanced Semiconductor Materials by Michael E. Levinshtein,Sergey L. Rumyantsev,Michael S. Shur Pdf

Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.

Fundamentals of Semiconductors

Author : Peter YU,Manuel Cardona
Publisher : Springer Science & Business Media
Page : 651 pages
File Size : 48,7 Mb
Release : 2005-03-23
Category : Technology & Engineering
ISBN : 9783540254706

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Fundamentals of Semiconductors by Peter YU,Manuel Cardona Pdf

Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.

Physical Properties of III-V Semiconductor Compounds

Author : Sadao Adachi
Publisher : John Wiley & Sons
Page : 342 pages
File Size : 41,7 Mb
Release : 1992-11-10
Category : Science
ISBN : 0471573299

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Physical Properties of III-V Semiconductor Compounds by Sadao Adachi Pdf

The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.

Evaluation of Advanced Semiconductor Materials by Electron Microscopy

Author : David Cherns
Publisher : Springer Science & Business Media
Page : 413 pages
File Size : 50,7 Mb
Release : 2012-12-06
Category : Medical
ISBN : 9781461305279

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Evaluation of Advanced Semiconductor Materials by Electron Microscopy by David Cherns Pdf

The last few years have ~een rapid improvements in semiconductor growth techniques which have produced an expanding range of high quality heterostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as their influence on electrical and optical properties. Much of this information is being obtained by electron microscopy and this is also an area of rapid progress. There have been advances for thin film studies across a wide range of techniques, including, for example, convergent beam electron diffraction, X-ray and electron energy loss microanalysis and high spatial resolution cathodoluminescence as well as by conventional and high resolution methods. Important develop ments have also occurred in the study of surfaces and film growth phenomena by both microscopy and diffraction techniques. With these developments in mind, an application was made to the NATO Science Committee in late summer 1987 to fund an Advanced Research Work shop to review the electron microscopy of advanced semiconductors. This was subsequently accepted for the 1988 programme and became the "NATO Advanced Research Workshop on the Evaluation of Advanced Semiconductor Materials by Electron Microscopy". The Workshop took place in the pleasant and intimate surroundings of Wills Hall, Bristol, UK, during the week 11-17 September 1988 and was attended by fifty-five participants from fourteen countries.

Advanced Semiconducting Materials and Devices

Author : K.M. Gupta,Nishu Gupta
Publisher : Springer
Page : 573 pages
File Size : 41,7 Mb
Release : 2015-08-20
Category : Technology & Engineering
ISBN : 9783319197586

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Advanced Semiconducting Materials and Devices by K.M. Gupta,Nishu Gupta Pdf

This book presents the latest developments in semiconducting materials and devices, providing up-to-date information on the science, processes, and applications in the field. A wide range of topics are covered, including optoelectronic devices, metal–semiconductor junctions, heterojunctions, MISFETs, LEDs, semiconductor lasers, photodiodes, switching diodes, tunnel diodes, Gunn diodes, solar cells, varactor diodes, IMPATT diodes, and advanced semiconductors. Detailed attention is paid to advanced and futuristic materials. In addition, clear explanations are provided of, for example, electron theories, high-field effects, the Hall effect, transit-time effects, drift and diffusion, breakdown mechanisms, equilibrium and transient conditions, switching, and biasing. The book is designed to meet the needs of undergraduate engineering students and will also be very useful for postgraduate students; it will assist in preparation for examinations at colleges and universities and for other examinations in engineering. Practice questions are therefore presented in both essay and multiple choice format, and many solved examples and unsolved problems are included.

III-Nitride Semiconductors: Electrical, Structural and Defects Properties

Author : M.O. Manasreh
Publisher : Elsevier
Page : 464 pages
File Size : 46,7 Mb
Release : 2000-12-06
Category : Science
ISBN : 0080534449

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III-Nitride Semiconductors: Electrical, Structural and Defects Properties by M.O. Manasreh Pdf

Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Physical Chemistry of Semiconductor Materials and Processes

Author : Anonim
Publisher : John Wiley & Sons
Page : 420 pages
File Size : 45,7 Mb
Release : 2015-10-12
Category : Science
ISBN : 9781118514573

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Physical Chemistry of Semiconductor Materials and Processes by Anonim Pdf

The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.

Semiconductors

Author : Martin I. Pech-Canul,Nuggehalli M. Ravindra
Publisher : Springer
Page : 590 pages
File Size : 45,5 Mb
Release : 2019-01-17
Category : Technology & Engineering
ISBN : 9783030021719

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Semiconductors by Martin I. Pech-Canul,Nuggehalli M. Ravindra Pdf

This book is a practical guide to optical, optoelectronic, and semiconductor materials and provides an overview of the topic from its fundamentals to cutting-edge processing routes to groundbreaking technologies for the most recent applications. The book details the characterization and properties of these materials. Chemical methods of synthesis are emphasized by the authors throughout the publication. Describes new materials and updates to older materials that exhibit optical, optoelectronic and semiconductor behaviors; Covers the structural and mechanical aspects of the optical, optoelectronic and semiconductor materials for meeting mechanical property and safety requirements; Includes discussion of the environmental and sustainability issues regarding optical, optoelectronic, and semiconductor materials, from processing to recycling.

Advanced Semiconductor Heterostructures: Novel Devices, Potential Device Applications And Basic Properties

Author : Michael A Stroscio,Mitra Dutta
Publisher : World Scientific
Page : 244 pages
File Size : 44,5 Mb
Release : 2003-09-12
Category : Technology & Engineering
ISBN : 9789814486552

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Advanced Semiconductor Heterostructures: Novel Devices, Potential Device Applications And Basic Properties by Michael A Stroscio,Mitra Dutta Pdf

This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the properties of semiconductor devices on the nanoscale. As an example, the intersubband lasers discussed in this book have a broad range of previously unobtainable characteristics and associated applications as a result of the nanoscale dimensional control of the underlying semiconductor heterostructures. As this book illustrates, an astounding variety of heterostructures can be fabricated with current technology; the potentially widespread use of layered quantum dots fabricated with nanoscale precision in biological applications opens up exciting advances in medicine. In addition, many more excellent examples of the remarkable impact being made through the use of semiconductor heterostructures are given. The summaries in this volume provide timely insights into what we know now about selected areas of advanced semiconductor heterostructures and also provide foundations for further developments.

Properties of Semiconductor Alloys

Author : Sadao Adachi
Publisher : John Wiley & Sons
Page : 422 pages
File Size : 46,7 Mb
Release : 2009-03-12
Category : Technology & Engineering
ISBN : 0470744391

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Properties of Semiconductor Alloys by Sadao Adachi Pdf

The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III−V and II−VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe, CSiSn, etc.), III−N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II−VI semiconductor alloys. Finally there is an extensive bibliography included for those who wish to find additional information as well as tabulated values and graphical information on the properties of semiconductor alloys.

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Author : Yue Hao,Jin Feng Zhang,Jin Cheng Zhang
Publisher : CRC Press
Page : 325 pages
File Size : 51,6 Mb
Release : 2016-11-03
Category : Computers
ISBN : 9781315351834

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Nitride Wide Bandgap Semiconductor Material and Electronic Devices by Yue Hao,Jin Feng Zhang,Jin Cheng Zhang Pdf

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Fundamentals of Semiconductor

Author : Peter YU,Manuel Cardona
Publisher : Springer Science & Business Media
Page : 627 pages
File Size : 41,9 Mb
Release : 2013-11-11
Category : Science
ISBN : 9783662033135

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Fundamentals of Semiconductor by Peter YU,Manuel Cardona Pdf

Bridging the gap between a general solid-state physics textbook and research articles, the renowned authors provide detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. Their approach is a physical and intuitive one, rather than formal and pedantic. This textbook has been written with both students and researchers in mind, and the authors therefore present theories to explain experimental results. Throughout, the emphasis is on understanding the physical properties of Si, and similar tetrahedrally coordinated semiconductors, with explanations based on physical insights. Each chapter is enriched by an extensive collection of tables of material parameters, figures and problems -- many of the latter 'lead students by the hand' to arrive at the results.

Advanced Semiconductor Devices

Author : Michael S. Shur,Paul A. Maki,James Kolodzey
Publisher : World Scientific
Page : 205 pages
File Size : 52,9 Mb
Release : 2007
Category : Science
ISBN : 9789812770332

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Advanced Semiconductor Devices by Michael S. Shur,Paul A. Maki,James Kolodzey Pdf

This volume covers five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicon-germanium devices, nanoelectronics and ballistic devices, and the characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology presented many firsts and breakthrough results, as has become a tradition with the Lester Eastman Conference, and will allow readers to obtain up-to-date information about emerging trends and future directions of these technologies. Key papers in each section present snap-shot and mini reviews of state-of-the-art and hot off the press results making the book required reading for engineers, scientists, and students working on advanced and high speed device technology.

Radiation Effects in Advanced Semiconductor Materials and Devices

Author : C. Claeys,E. Simoen
Publisher : Springer Science & Business Media
Page : 424 pages
File Size : 55,8 Mb
Release : 2013-11-11
Category : Science
ISBN : 9783662049747

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Radiation Effects in Advanced Semiconductor Materials and Devices by C. Claeys,E. Simoen Pdf

This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.