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High-Frequency Bipolar Transistors by Michael Reisch Pdf
This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
SiGe Heterojunction Bipolar Transistors by Peter Ashburn Pdf
SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Designing Bipolar Transistor Radio Frequency Integrated Circuits by Allen A. Sweet Pdf
If you're looking for an in-depth and up-to-date understanding bipolar transistor RFIC design, this practical resource is a smart choice. Unlike most books on the market that focus on GaAs MESFET or silicon CMOS process technology, this unique volume is dedicated exclusively to RFIC designs based on bipolar technology. Until now, critical GaAs HBT and SiGe HBT process technologies have been largely neglected in reference books. This book fills this gap, offering you a detailed treatment of this increasingly important topic. You discover a wide range of circuit topologies that are optimized for maximum performance with bipolar devices. From discussions of key applications (Bluetooth, UWB, GPS, WiMax) and architectures… to in-depth coverage of fabrication technologies and amplifier design… to a look at performance tradeoffs and production costs, this book arms you with complete design know-how for your challenging work in the field.
Cellular telephones, satellite communications and radar systems are adding to the increasing demand for radio frequency circuit design principles. At the same time, several generations of digitally-oriented graduates are missing the essential RF skills. This book contains a wealth of valuable design information difficult to find elsewhere. It's a complete 'tool kit' for successful RF circuit design. Written by experienced RF design engineers from Motorola's semiconductors product section. Book covers design examples of circuits (e.g. amplifiers; oscillators; switches; pulsed power; modular systems; wiring state-of-the-art devices; design techniques).
Current Trends in Heterojunction Bipolar Transistors by M. F. Chang Pdf
Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Radio-Frequency Microelectronic Circuits for Telecommunication Applications by Yannis E. Papananos Pdf
Radio-Frequency Microelectronic Circuits for Telecommunication Applications covers the design issues of radio-frequency microelectronic circuits for telecommunication applications with emphasis on devices and circuit-level design. It uses a large number of real examples from industrial design as a vehicle both to teach the principles and to ensure relevance starting from device level modeling to basic RF microelectronic circuit cell design. Modeling for high-frequency operation of both active and passive integrated devices is covered starting from the bipolar transistor to the MOS transistor to the modeling of integrated spiral inductors, resistors, capacitors, varactors and package parasitics structures. A chapter is also devoted to the presentation of the basic definitions and terminology used in RF IC design. The book continues with the presentation of the principal building blocks of an integrated RF front-end, namely, the LNA, the mixer, the VCO and integrated filters. Design paradigms are provided classified on the technology used in each case: pure bipolar, CMOS, BiCMOS or SiGe. Radio-Frequency Microelectronic Circuits for Telecommunication Applications is essential reading for all researchers, practising engineers and designers working in RF electronics. It is also a reference for use in advanced undergraduate or graduate courses in the same field.
Heterojunction Bipolar Transistors for Circuit Design by Jianjun Gao Pdf
A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Compact Hierarchical Bipolar Transistor Modeling with Hicum by Michael Schrter,Anjan Chakravorty Pdf
Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
High-frequency Circuit Engineering by Ferdinand Nibler Pdf
In a translation originally published by Expert-Verlag and Technical Academy of Esslingen and based on courses taught there, eight German engineers discuss the theory and practice of radio-frequency engineering in the field of wireless communications. Focusing on computer supported problem solving, the authors discuss network parameters, CAD programs, noise measurement, and transistor circuits. The text is illustrated by sample calculations and design examples to illustrate techniques. Lacks a bibliography. Annotation copyright by Book News, Inc., Portland, OR
Transistor parameters and stability. Amplifier design principles. The smith chart and matching networks. Amplifier design using the smith chart. Bias stabilization. Scattering parameters. Design using scattering parameters. Generalized scattering parameters. Some inequalities.
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Physics of High-Speed Transistors by Juras Pozela Pdf
This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.
Analysis of Bipolar and CMOS Amplifiers by Amir M. Sodagar Pdf
The classical approach to analog circuit analysis is a daunting prospect to many students, requiring tedious enumeration of contributing factors and lengthy calculations. Most textbooks apply this cumbersome approach to small-signal amplifiers, which becomes even more difficult as the number of components increases. Analysis of Bipolar and CMOS Amplifiers offers students an alternative that enables quick and intuitive analysis and design: the analysis-by-inspection method. This practical and student-friendly text demonstrates how to achieve approximate results that fall within an acceptable range of accuracy and are based on sound scientific principles. Working from the basics of amplifiers and transistors to biasing, single- and multistage amplifiers, current sources and mirrors, and analysis at midband, low, and high frequencies, the author demonstrates the interrelationship between behavior in both the time and frequency domains and balances the discussion between bipolar and CMOS circuits. Each chapter closes with a set of simulation examples in SPICE and MATLAB® that give students hands-on experience applying the concepts and methods using industry-standard tools. Building a practical working knowledge around a solid theoretical framework, Analysis of Bipolar and CMOS Amplifiers prepares your students to meet the challenges of quick and accurate approximations and software-based analysis awaiting them in the workplace.
Very High Frequency Bipolar Junction Transistor Frequency Multiplier Drive Network Design and Analysis by Anonim Pdf
Frequency multiplier designs use a variety of nonlinear devices and topologies to achieve excitation of harmonics. This thesis will focus on the design and analysis of single ended bipolar junction transistor frequency multipliers. This topology serves as a relatively simple design that lends itself to analysis of device parasitics and nonlinearities.
Solid-State Circuits provides an introduction to the theory and practice underlying solid-state circuits, laying particular emphasis on field effect transistors and integrated circuits. Topics range from construction and characteristics of semiconductor devices to rectification and power supplies, low-frequency amplifiers, sine- and square-wave oscillators, and high-frequency effects and circuits. Black-box equivalent circuits of bipolar transistors, physical equivalent circuits of bipolar transistors, and equivalent circuits of field effect transistors are also covered. This volume is divided into three sections comprised of 11 chapters and begins with an introduction to the basic physics of bulk semiconductors, diodes, and transistors, along with the construction and characteristics of devices and integrated circuits. Physics is kept to the minimum necessary for the understanding of devices. Attention then turns to the fundamental use of semiconductors in rectifier, amplifier, and oscillator circuits. The high frequency use of transistors is given consideration, and in all examples designs from device characteristics are included. The remaining chapters focus on the development of equivalent circuits of transistors. This approach highlights the alternating current operation of devices, and some of the more sophisticated circuits using semiconductor devices are demonstrated. This book will be of interest to students and practitioners of electronics and electrical engineering.
