High Rate Growth Of Hydrogenated Amorphous And Microcrystalline Silicon For Thin Film Silicon Solar Cells Using Dynamic Very High Frequency Plasma Enhanced Chemical Vapor Deposition

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High-rate growth of hydrogenated amorphous and microcrystalline silicon for thin-film silicon solar cells using dynamic very-high frequency plasma-enhanced chemical vapor deposition

Author : Thomas Zimmermann
Publisher : Forschungszentrum Jülich
Page : 143 pages
File Size : 54,6 Mb
Release : 2013
Category : Electronic
ISBN : 9783893368921

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High-rate growth of hydrogenated amorphous and microcrystalline silicon for thin-film silicon solar cells using dynamic very-high frequency plasma-enhanced chemical vapor deposition by Thomas Zimmermann Pdf

Crystalline and Non-crystalline Solids

Author : Pietro Mandracci
Publisher : BoD – Books on Demand
Page : 186 pages
File Size : 40,6 Mb
Release : 2016-06-29
Category : Technology & Engineering
ISBN : 9789535124450

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Crystalline and Non-crystalline Solids by Pietro Mandracci Pdf

The structural properties of materials play a fundamental role in the determination of their suitability for a specific application. This book is intended as a contribution to the efforts to increase the knowledge of the influence exerted on the properties of materials by their crystalline or amorphous structure. To this aim, some of the materials that are most promising for their use in different technological fields have been studied, namely graphene, titanium oxide, several types of functional metal oxides, porphyrinic crystalline solids, plasma deposited polymers, amorphous silicon, as well as hydrogenated amorphous carbon. These materials have been presented by the authors for their use in different applications, including microelectronics, photonics, and biomedicine.

IEK-3 Report 2013: Durable Electrochemical Process Engineering

Author : Forschungszentrum Jülich Institut für Energie- und Klimaforschung Elektrochemische Verfahrenstechnik
Publisher : Forschungszentrum Jülich
Page : 188 pages
File Size : 45,7 Mb
Release : 2013
Category : Electronic
ISBN : 9783893368938

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IEK-3 Report 2013: Durable Electrochemical Process Engineering by Forschungszentrum Jülich Institut für Energie- und Klimaforschung Elektrochemische Verfahrenstechnik Pdf

Applied Science & Technology Index

Author : Anonim
Publisher : Unknown
Page : 1688 pages
File Size : 52,8 Mb
Release : 2000
Category : Engineering
ISBN : PSU:000053916532

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Applied Science & Technology Index by Anonim Pdf

Electrical & Electronics Abstracts

Author : Anonim
Publisher : Unknown
Page : 1860 pages
File Size : 49,7 Mb
Release : 1997
Category : Electrical engineering
ISBN : OSU:32435059588608

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Electrical & Electronics Abstracts by Anonim Pdf

International Aerospace Abstracts

Author : Anonim
Publisher : Unknown
Page : 920 pages
File Size : 46,6 Mb
Release : 1998
Category : Aeronautics
ISBN : STANFORD:36105021106716

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International Aerospace Abstracts by Anonim Pdf

Physics Briefs

Author : Anonim
Publisher : Unknown
Page : 1420 pages
File Size : 45,6 Mb
Release : 1993
Category : Physics
ISBN : UOM:39015027828634

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Physics Briefs by Anonim Pdf

Science Abstracts

Author : Anonim
Publisher : Unknown
Page : 1228 pages
File Size : 50,8 Mb
Release : 1992
Category : Physics
ISBN : STANFORD:36105000903513

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Science Abstracts by Anonim Pdf

Technology and Applications of Amorphous Silicon

Author : Robert A. Street
Publisher : Springer Science & Business Media
Page : 429 pages
File Size : 51,9 Mb
Release : 2013-06-29
Category : Technology & Engineering
ISBN : 9783662041413

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Technology and Applications of Amorphous Silicon by Robert A. Street Pdf

This book gives the first systematic and complete survey of technology and application of amorphous silicon, a material with a huge potential in electronic applications. The book features contributions by world-wide leading researchers in this field.

Conference Papers Index

Author : Anonim
Publisher : Unknown
Page : 950 pages
File Size : 44,6 Mb
Release : 1987
Category : Engineering
ISBN : UOM:39015013030385

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Conference Papers Index by Anonim Pdf

Introduction to Thin Film Transistors

Author : S.D. Brotherton
Publisher : Springer Science & Business Media
Page : 467 pages
File Size : 46,7 Mb
Release : 2013-04-16
Category : Technology & Engineering
ISBN : 9783319000022

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Introduction to Thin Film Transistors by S.D. Brotherton Pdf

Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.