Internal Photoemission Spectroscopy

Author : Valeri V. Afanas'ev
Publisher : Elsevier
Page : 312 pages
File Size : 49,6 Mb
Release : 2010-07-07
Category : Science
ISBN : 0080555896

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Internal Photoemission Spectroscopy by Valeri V. Afanas'ev Pdf

The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method provides the unique capability of analysing the heterostructures relevant to the modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. In addition to the discussion of fundamental physical and technical aspects of IPE spectroscopic applications, several “hot topics are addressed. These include development of new insulating materials for advances Si MOS technology (both high-k gate insulators and low-k dielectrics for interconnect insulation), metal gate materials, development of heterostructures based on high-mobility semiconductors, etc. Thanks to a considerable activity in this field over the last few years, the recent results concerning band structure of most important interfaces involving novel materials can now be documented. - First complete description of the internal photoemission phenomena - A practical guide to internal photoemission measurements - Describes reliable energy barrier determination procedures - Surveys trap spectroscopy methods applicable to thin insulating layers - Provides an overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces - Contains a complete collection of reference data on interface band alignment for wide-bandgap insulating materials in contact with metals and semiconductors

Author : Valeri V. Afanas'ev
Publisher : Elsevier
Page : 404 pages
File Size : 42,8 Mb
Release : 2014-02-22
Category : Science
ISBN : 9780080999302

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Internal Photoemission Spectroscopy by Valeri V. Afanas'ev Pdf

The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well. Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. First complete model description of the internal photoemission phenomena Overview of the most reliable energy barrier determination procedures and trap characterization methods Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals

Author : Zhiyong Ma,David G. Seiler
Publisher : CRC Press
Page : 843 pages
File Size : 51,9 Mb
Release : 2017-03-27
Category : Science
ISBN : 9781351733946

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Metrology and Diagnostic Techniques for Nanoelectronics by Zhiyong Ma,David G. Seiler Pdf

Nanoelectronics is changing the way the world communicates, and is transforming our daily lives. Continuing Moore’s law and miniaturization of low-power semiconductor chips with ever-increasing functionality have been relentlessly driving R&D of new devices, materials, and process capabilities to meet performance, power, and cost requirements. This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product development and debugging—a unique approach compared to other books. The authors are from academia, government labs, and industry and have vast experience and expertise in the topics presented. The book is intended for all those involved in IC manufacturing and nanoelectronics and for those studying nanoelectronics process and assembly technologies or working in device testing, characterization, and diagnostic techniques.

Author : Stephan Hüfner
Publisher : Springer Science & Business Media
Page : 671 pages
File Size : 52,9 Mb
Release : 2013-03-09
Category : Science
ISBN : 9783662092804

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Photoelectron Spectroscopy by Stephan Hüfner Pdf

The author, S. Hüfner, presents an authoritative and up-to-date introduction to the field by comprehensively treating the electronic structures of atoms, molecules, solids, and surfaces. Brief descriptions are given of inverse photoemission, spin-polarized photoemission and photoelectron diffraction. Experimental aspects are considered throughout the third edition book and the results are carefully interpreted in terms of the theory. A wealth of measured data is presented in tabulator form for easy use by experimentalists. The reader will learn about the basic technique of photoemission spectroscopy and obtain the necessary background for work based on this book.

Author : Gang He,Zhaoqi Sun
Publisher : John Wiley & Sons
Page : 560 pages
File Size : 47,5 Mb
Release : 2012-08-10
Category : Technology & Engineering
ISBN : 9783527646364

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High-k Gate Dielectrics for CMOS Technology by Gang He,Zhaoqi Sun Pdf

A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.

Author : Wolfgang J. Choyke,Hiroyuki Matsunami,Gerhard Pensl
Publisher : Springer Science & Business Media
Page : 899 pages
File Size : 55,7 Mb
Release : 2013-04-17
Category : Technology & Engineering
ISBN : 9783642188701

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Silicon Carbide by Wolfgang J. Choyke,Hiroyuki Matsunami,Gerhard Pensl Pdf

Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

Author : Winfried Mönch
Publisher : Springer Science & Business Media
Page : 269 pages
File Size : 45,9 Mb
Release : 2013-04-17
Category : Technology & Engineering
ISBN : 9783662069455

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Electronic Properties of Semiconductor Interfaces by Winfried Mönch Pdf

Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

Author : Anonim
Publisher : Unknown
Page : 800 pages
File Size : 44,6 Mb
Release : 1968
Category : Weights and measures
ISBN : STANFORD:36105130367332

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NBS Special Publication by Anonim Pdf

Author : United States. National Bureau of Standards
Publisher : Unknown
Page : 788 pages
File Size : 41,5 Mb
Release : 1978
Category : Government publications
ISBN : UOM:39015057260732

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Publications by United States. National Bureau of Standards Pdf

Author : United States. National Bureau of Standards
Publisher : Unknown
Page : 788 pages
File Size : 50,7 Mb
Release : 1978
Category : Electronic
ISBN : OSU:32435028396430

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Publications of the National Bureau of Standards ... Catalog by United States. National Bureau of Standards Pdf

Author : United States. National Bureau of Standards. Technical Information and Publications Division
Publisher : Unknown
Page : 788 pages
File Size : 50,7 Mb
Release : 1978
Category : Government publications
ISBN : UOM:39015086505644

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Catalog of National Bureau of Standards Publications, 1966-1976: Key word index by United States. National Bureau of Standards. Technical Information and Publications Division Pdf

Author : United States. National Bureau of Standards
Publisher : Unknown
Page : 788 pages
File Size : 41,9 Mb
Release : 1978
Category : Government publications
ISBN : UIUC:30112104127268

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Catalog of National Bureau of Standards Publications, 1966-1976 by United States. National Bureau of Standards Pdf

Author : Leo Miglio,Francois d'Heurle
Publisher : World Scientific
Page : 388 pages
File Size : 53,7 Mb
Release : 2000-12-18
Category : Science
ISBN : 9789814492188

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Silicides: Fundamentals and Applications by Leo Miglio,Francois d'Heurle Pdf

Silicides were introduced into the technology of electronic devices some thirty years ago; since then, they have been continuously used to form both ohmic and rectifying contacts to silicon. Silicides are also important for other applications (thermoelectric devices and structural applications, such as jet engines), but it is not easy to find an updated reference containing both their basic properties, either chemical or physical, and the latest applications. The 16th Course of the International School of Solid State Physics, held in Erice (Italy) in the late spring of 1999, was intended to break artificial barriers between disciplines, and to gather people concerned with the properties and applications of silicides, regardless of the formal fields to which they belong, or of the practical goals they pursue. This book is therefore concerned with theory as well as applications, metallurgy as well as physics, and materials science as well as microelectronics. Contents:Crystal Chemistry of Metal Silicides (R Madar)Bonding and Polymorphism in Transition Metal Disilicides (L Miglio et al.)Diffusion in Silicides: Basic Approach and Practical Applications (P Gas & F M d'Heurle)Silicides and Thermodynamics (C Bernard & A Pisch)Optical Properties of Silicides: Theory and Experiment (V Antonov & F Marabelli)Fundamental Electronic Properties of Semiconducting Silicides (V Borisenko)Semiconducting Silicides — Thermoelectric Properties and Applications (A Heinrich)Metallic Silicides (G Ottaviani)The Kinetics of Reactive Phase Formation: Silicides (F M d'Heurle)Reactive Phase Formation in Binary and Ternary Silicide Systems (A A Kodentsov et al.)Epitaxial Silicides (H von Känel)Ion Beam Synthesis, Molecular Beam Allotaxy and Self-Assembled Patterning of Epitaxial Silicides (S Mantl)Silicides: Materials Science and Applications for Microelectronics (K Maex & A Lauwers)The Changing Views on the Schottky Barrier (R Tung)Metal Rich Structural Silicides (A J Thom et al.)and several other papers on more topical subjects Readership: Researchers in applied physics, condensed matter physics, and electrical & electronic engineering. Keywords:Silicides;Solid State Physics;Silicon;Metallurgy;Materials Science;Microelectronics

Author : Susanne Siebentritt,Uwe Rau
Publisher : Springer Science & Business Media
Page : 267 pages
File Size : 53,5 Mb
Release : 2006-02-25
Category : Science
ISBN : 9783540312932

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Wide-Gap Chalcopyrites by Susanne Siebentritt,Uwe Rau Pdf

Chalcopyrites, in particular those with a wide band gap, are fascinating materials in terms of their technological potential in the next generation of thin-film solar cells and in terms of their basic material properties. They exhibit uniquely low defect formation energies, leading to unusual doping and phase behavior and to extremely benign grain boundaries. This book collects articles on a number of those basic material properties of wide-gap chalcopyrites, comparing them to their low-gap cousins. They explore the doping of the materials, the electronic structure and the transport through interfaces and grain boundaries, the formation of the electric field in a solar cell, the mechanisms and suppression of recombination, the role of inhomogeneities, and the technological role of wide-gap chalcopyrites.

Author : Leonard J. Brillson
Publisher : John Wiley & Sons
Page : 589 pages
File Size : 40,8 Mb
Release : 2012-06-26
Category : Technology & Engineering
ISBN : 9783527665723

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Surfaces and Interfaces of Electronic Materials by Leonard J. Brillson Pdf

An advanced level textbook covering geometric, chemical, and electronic structure of electronic materials, and their applications to devices based on semiconductor surfaces, metal-semiconductor interfaces, and semiconductor heterojunctions. Starting with the fundamentals of electrical measurements on semiconductor interfaces, it then describes the importance of controlling macroscopic electrical properties by atomic-scale techniques. Subsequent chapters present the wide range of surface and interface techniques available to characterize electronic, optical, chemical, and structural properties of electronic materials, including semiconductors, insulators, nanostructures, and organics. The essential physics and chemistry underlying each technique is described in sufficient depth with references to the most authoritative sources for more exhaustive discussions, while numerous examples are provided throughout to illustrate the applications of each technique. With its general reading lists, extensive citations to the text, and problem sets appended to all chapters, this is ideal for students of electrical engineering, physics and materials science. It equally serves as a reference for physicists, material science and electrical and electronic engineers involved in surface and interface science, semiconductor processing, and device modeling and design. This is a coproduction of Wiley and IEEE * Free solutions manual available for lecturers at www.wiley-vch.de/supplements/